KR102646859B1 - 백금 합금을 합금하고 에칭하는 것에 의한 백금 패터닝 - Google Patents

백금 합금을 합금하고 에칭하는 것에 의한 백금 패터닝 Download PDF

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KR102646859B1
KR102646859B1 KR1020217002330A KR20217002330A KR102646859B1 KR 102646859 B1 KR102646859 B1 KR 102646859B1 KR 1020217002330 A KR1020217002330 A KR 1020217002330A KR 20217002330 A KR20217002330 A KR 20217002330A KR 102646859 B1 KR102646859 B1 KR 102646859B1
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layer
platinum
hard mask
aluminum
alloy
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KR20210035189A (ko
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세바스티안 마이어
헬무트 린크
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텍사스 인스트루먼츠 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H01L21/32134—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00539—Wet etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • H01L21/32139—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Pathology (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020217002330A 2018-07-27 2019-07-29 백금 합금을 합금하고 에칭하는 것에 의한 백금 패터닝 Active KR102646859B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020247007826A KR20240038117A (ko) 2018-07-27 2019-07-29 백금 합금을 합금하고 에칭하는 것에 의한 백금 패터닝

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862703937P 2018-07-27 2018-07-27
US62/703,937 2018-07-27
US16/523,867 2019-07-26
US16/523,867 US11011381B2 (en) 2018-07-27 2019-07-26 Patterning platinum by alloying and etching platinum alloy
PCT/US2019/043850 WO2020023953A1 (en) 2018-07-27 2019-07-29 Patterning platinum by alloying and etching platinum alloy

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020247007826A Division KR20240038117A (ko) 2018-07-27 2019-07-29 백금 합금을 합금하고 에칭하는 것에 의한 백금 패터닝

Publications (2)

Publication Number Publication Date
KR20210035189A KR20210035189A (ko) 2021-03-31
KR102646859B1 true KR102646859B1 (ko) 2024-03-13

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KR1020217002330A Active KR102646859B1 (ko) 2018-07-27 2019-07-29 백금 합금을 합금하고 에칭하는 것에 의한 백금 패터닝
KR1020247007826A Pending KR20240038117A (ko) 2018-07-27 2019-07-29 백금 합금을 합금하고 에칭하는 것에 의한 백금 패터닝

Family Applications After (1)

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Country Status (6)

Country Link
US (3) US11011381B2 (https=)
EP (1) EP3830862A4 (https=)
JP (2) JP7476442B2 (https=)
KR (2) KR102646859B1 (https=)
CN (1) CN112753093A (https=)
WO (1) WO2020023953A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11011381B2 (en) * 2018-07-27 2021-05-18 Texas Instruments Incorporated Patterning platinum by alloying and etching platinum alloy
CN111945128A (zh) * 2020-08-18 2020-11-17 江苏能华微电子科技发展有限公司 一种提高铂与衬底黏附性的方法及其产品
US12607594B2 (en) 2020-09-03 2026-04-21 Texas Instruments Incorporated ISFET biosensor
DE102024203632A1 (de) * 2024-04-18 2025-10-23 Infineon Technologies Ag Halbleiterchip und verfahren zur herstellung davon
CN118857496B (zh) * 2024-09-25 2025-01-28 南昌三盛半导体有限公司 一种铂薄膜温度传感器及其制备方法

Citations (2)

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WO2008044803A1 (en) * 2006-10-13 2008-04-17 Korea Institute Of Science And Technology Method for manufacturing metal structure and carbon nano tube by using immersion plating
WO2014040818A1 (en) * 2012-09-14 2014-03-20 Atotech Deutschland Gmbh Method for metallization of solar cell substrates

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JPS54137273A (en) * 1978-04-17 1979-10-24 Nec Corp Semiconductor device
JPS5843539A (ja) 1981-09-08 1983-03-14 Nec Corp 半導体装置
US4740485A (en) * 1986-07-22 1988-04-26 Monolithic Memories, Inc. Method for forming a fuse
JP3134093B2 (ja) * 1992-06-23 2001-02-13 本田技研工業株式会社 白金パターンの形成方法
DE4402117C2 (de) 1994-01-25 1995-11-23 Siemens Matsushita Components Hochtemperatur-Gassensor und Verfahren zu seiner Herstellung
JPH11145112A (ja) * 1997-11-07 1999-05-28 Nec Corp パターニング方法
EP0929096A2 (en) * 1998-01-08 1999-07-14 International Business Machines Corporation Metal patterning by formation of etchable plural metal compositions
US6475911B1 (en) * 2000-08-16 2002-11-05 Micron Technology, Inc. Method of forming noble metal pattern
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WO2005081317A1 (ja) * 2004-02-19 2005-09-01 Fujitsu Limited 半導体装置の製造方法
EP1591776A1 (en) 2004-04-30 2005-11-02 Henkel KGaA Gas sensor for the determination of isocyanates using metal oxide semiconductors
JP5865634B2 (ja) * 2011-09-06 2016-02-17 三菱電機株式会社 配線膜の製造方法
US20140077662A1 (en) * 2012-09-19 2014-03-20 The Governors Of The University Of Alberta Piezoelectric apparatus for harvesting energy for portable electronics and method for manufacturing same
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WO2008044803A1 (en) * 2006-10-13 2008-04-17 Korea Institute Of Science And Technology Method for manufacturing metal structure and carbon nano tube by using immersion plating
WO2014040818A1 (en) * 2012-09-14 2014-03-20 Atotech Deutschland Gmbh Method for metallization of solar cell substrates

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Publication number Publication date
KR20240038117A (ko) 2024-03-22
US20200035500A1 (en) 2020-01-30
US20210242029A1 (en) 2021-08-05
EP3830862A1 (en) 2021-06-09
KR20210035189A (ko) 2021-03-31
US11658034B2 (en) 2023-05-23
WO2020023953A1 (en) 2020-01-30
CN112753093A (zh) 2021-05-04
EP3830862A4 (en) 2021-12-29
US20230253211A1 (en) 2023-08-10
JP7476442B2 (ja) 2024-05-01
JP2024072836A (ja) 2024-05-28
US11011381B2 (en) 2021-05-18
JP2021531415A (ja) 2021-11-18

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