CN112753093A - 通过合金化和蚀刻铂合金图案化铂 - Google Patents

通过合金化和蚀刻铂合金图案化铂 Download PDF

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Publication number
CN112753093A
CN112753093A CN201980063516.1A CN201980063516A CN112753093A CN 112753093 A CN112753093 A CN 112753093A CN 201980063516 A CN201980063516 A CN 201980063516A CN 112753093 A CN112753093 A CN 112753093A
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China
Prior art keywords
layer
platinum
aluminum
forming
metal
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Pending
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CN201980063516.1A
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English (en)
Chinese (zh)
Inventor
S·梅耶
H·林克
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00539—Wet etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Pathology (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN201980063516.1A 2018-07-27 2019-07-29 通过合金化和蚀刻铂合金图案化铂 Pending CN112753093A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862703937P 2018-07-27 2018-07-27
US62/703,937 2018-07-27
US16/523,867 2019-07-26
US16/523,867 US11011381B2 (en) 2018-07-27 2019-07-26 Patterning platinum by alloying and etching platinum alloy
PCT/US2019/043850 WO2020023953A1 (en) 2018-07-27 2019-07-29 Patterning platinum by alloying and etching platinum alloy

Publications (1)

Publication Number Publication Date
CN112753093A true CN112753093A (zh) 2021-05-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980063516.1A Pending CN112753093A (zh) 2018-07-27 2019-07-29 通过合金化和蚀刻铂合金图案化铂

Country Status (6)

Country Link
US (3) US11011381B2 (https=)
EP (1) EP3830862A4 (https=)
JP (2) JP7476442B2 (https=)
KR (2) KR102646859B1 (https=)
CN (1) CN112753093A (https=)
WO (1) WO2020023953A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111945128A (zh) * 2020-08-18 2020-11-17 江苏能华微电子科技发展有限公司 一种提高铂与衬底黏附性的方法及其产品

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11011381B2 (en) * 2018-07-27 2021-05-18 Texas Instruments Incorporated Patterning platinum by alloying and etching platinum alloy
US12607594B2 (en) 2020-09-03 2026-04-21 Texas Instruments Incorporated ISFET biosensor
DE102024203632A1 (de) * 2024-04-18 2025-10-23 Infineon Technologies Ag Halbleiterchip und verfahren zur herstellung davon
CN118857496B (zh) * 2024-09-25 2025-01-28 南昌三盛半导体有限公司 一种铂薄膜温度传感器及其制备方法

Citations (6)

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JPH11145112A (ja) * 1997-11-07 1999-05-28 Nec Corp パターニング方法
US20020115231A1 (en) * 2000-08-16 2002-08-22 Lane Richard H. Method of forming noble metal pattern
WO2005106443A1 (en) * 2004-04-30 2005-11-10 Henkel Kommanditgesellschaft Auf Aktien Gas-sensor for the determination of isocyanates using metal oxide semiconductors
WO2008044803A1 (en) * 2006-10-13 2008-04-17 Korea Institute Of Science And Technology Method for manufacturing metal structure and carbon nano tube by using immersion plating
WO2014045000A1 (en) * 2012-09-20 2014-03-27 University Of Southampton Apparatus with a sensor having strain compensation means for sensing at least one parameter in water the
CN107604175A (zh) * 2016-07-12 2018-01-19 通用电气公司 铂回收方法

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JPS54137273A (en) * 1978-04-17 1979-10-24 Nec Corp Semiconductor device
JPS5843539A (ja) 1981-09-08 1983-03-14 Nec Corp 半導体装置
US4740485A (en) * 1986-07-22 1988-04-26 Monolithic Memories, Inc. Method for forming a fuse
JP3134093B2 (ja) * 1992-06-23 2001-02-13 本田技研工業株式会社 白金パターンの形成方法
DE4402117C2 (de) 1994-01-25 1995-11-23 Siemens Matsushita Components Hochtemperatur-Gassensor und Verfahren zu seiner Herstellung
EP0929096A2 (en) * 1998-01-08 1999-07-14 International Business Machines Corporation Metal patterning by formation of etchable plural metal compositions
US6790786B2 (en) * 2002-03-05 2004-09-14 Micron Technology, Inc. Etching processes for integrated circuit manufacturing including methods of forming capacitors
JP2004311624A (ja) * 2003-04-04 2004-11-04 Tokuyama Corp 積層体およびその製造方法
WO2005081317A1 (ja) * 2004-02-19 2005-09-01 Fujitsu Limited 半導体装置の製造方法
JP5865634B2 (ja) * 2011-09-06 2016-02-17 三菱電機株式会社 配線膜の製造方法
ES2573137T3 (es) 2012-09-14 2016-06-06 Atotech Deutschland Gmbh Método de metalización de sustratos de célula solar
US20140077662A1 (en) * 2012-09-19 2014-03-20 The Governors Of The University Of Alberta Piezoelectric apparatus for harvesting energy for portable electronics and method for manufacturing same
US10276362B2 (en) 2016-04-29 2019-04-30 Infineon Technologies Ag Method for processing a semiconductor region and an electronic device
US10297497B2 (en) 2017-01-19 2019-05-21 Texas Instruments Incorporated Sacrificial layer for platinum patterning
US10504733B2 (en) 2017-01-19 2019-12-10 Texas Instruments Incorporated Etching platinum-containing thin film using protective cap layer
US10707089B2 (en) 2018-03-27 2020-07-07 Texas Instruments Incorporated Dry etch process landing on metal oxide etch stop layer over metal layer and structure formed thereby
US11011381B2 (en) * 2018-07-27 2021-05-18 Texas Instruments Incorporated Patterning platinum by alloying and etching platinum alloy

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145112A (ja) * 1997-11-07 1999-05-28 Nec Corp パターニング方法
US20020115231A1 (en) * 2000-08-16 2002-08-22 Lane Richard H. Method of forming noble metal pattern
WO2005106443A1 (en) * 2004-04-30 2005-11-10 Henkel Kommanditgesellschaft Auf Aktien Gas-sensor for the determination of isocyanates using metal oxide semiconductors
WO2008044803A1 (en) * 2006-10-13 2008-04-17 Korea Institute Of Science And Technology Method for manufacturing metal structure and carbon nano tube by using immersion plating
WO2014045000A1 (en) * 2012-09-20 2014-03-27 University Of Southampton Apparatus with a sensor having strain compensation means for sensing at least one parameter in water the
CN107604175A (zh) * 2016-07-12 2018-01-19 通用电气公司 铂回收方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111945128A (zh) * 2020-08-18 2020-11-17 江苏能华微电子科技发展有限公司 一种提高铂与衬底黏附性的方法及其产品

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KR102646859B1 (ko) 2024-03-13
KR20240038117A (ko) 2024-03-22
US20200035500A1 (en) 2020-01-30
US20210242029A1 (en) 2021-08-05
EP3830862A1 (en) 2021-06-09
KR20210035189A (ko) 2021-03-31
US11658034B2 (en) 2023-05-23
WO2020023953A1 (en) 2020-01-30
EP3830862A4 (en) 2021-12-29
US20230253211A1 (en) 2023-08-10
JP7476442B2 (ja) 2024-05-01
JP2024072836A (ja) 2024-05-28
US11011381B2 (en) 2021-05-18
JP2021531415A (ja) 2021-11-18

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