JP2021531415A - 合金化すること及びプラチナ合金をエッチングすることによるプラチナのパターン化 - Google Patents
合金化すること及びプラチナ合金をエッチングすることによるプラチナのパターン化 Download PDFInfo
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- JP2021531415A JP2021531415A JP2021527030A JP2021527030A JP2021531415A JP 2021531415 A JP2021531415 A JP 2021531415A JP 2021527030 A JP2021527030 A JP 2021527030A JP 2021527030 A JP2021527030 A JP 2021527030A JP 2021531415 A JP2021531415 A JP 2021531415A
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- layer
- platinum
- aluminum
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 412
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 196
- 238000005530 etching Methods 0.000 title claims description 24
- 229910001260 Pt alloy Inorganic materials 0.000 title claims description 4
- 238000000059 patterning Methods 0.000 title abstract description 11
- 238000005275 alloying Methods 0.000 title description 11
- 238000000034 method Methods 0.000 claims abstract description 125
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 66
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 52
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 24
- 239000000956 alloy Substances 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 189
- 230000008569 process Effects 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 238000004377 microelectronic Methods 0.000 claims description 23
- 239000012790 adhesive layer Substances 0.000 claims description 22
- 238000001039 wet etching Methods 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 10
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 238000007654 immersion Methods 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 7
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims 4
- 238000007740 vapor deposition Methods 0.000 claims 2
- 238000010790 dilution Methods 0.000 claims 1
- 239000012895 dilution Substances 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- GIGQFSYNIXPBCE-UHFFFAOYSA-N alumane;platinum Chemical compound [AlH3].[Pt] GIGQFSYNIXPBCE-UHFFFAOYSA-N 0.000 abstract description 12
- 230000015572 biosynthetic process Effects 0.000 description 27
- 235000012431 wafers Nutrition 0.000 description 13
- 239000007921 spray Substances 0.000 description 9
- 238000011109 contamination Methods 0.000 description 8
- 229910000951 Aluminide Inorganic materials 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 5
- 229910052753 mercury Inorganic materials 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007704 wet chemistry method Methods 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 101150110932 US19 gene Proteins 0.000 description 1
- 238000000441 X-ray spectroscopy Methods 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- XSBJUSIOTXTIPN-UHFFFAOYSA-N aluminum platinum Chemical compound [Al].[Pt] XSBJUSIOTXTIPN-UHFFFAOYSA-N 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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- G—PHYSICS
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- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
Description
Claims (32)
- プラチナをパターン化する方法であって、
半導体基板上にプラチナ層を堆積すること、
前記プラチナ層における露出された領域を残して、パターン化されたフォトレジスト層を前記プラチナ層の上に形成すること、
前記プラチナ層と前記露出された領域の上にアルミニウム層を堆積すること、
前記プラチナ層の前記露出された領域においてアルミニウム及びプラチナの合金を形成すること、及び
前記アルミニウム層と、前記プラチナ層の前記露出された領域における前記合金化されたアルミニウム及びプラチナとをエッチングすることであって、それにより、前記プラチナ層の残っている部分を残して、パターン化された前記プラチナ層を前記基板上に形成すること、
を含む、方法。 - 請求項1に記載の方法であって、前記アルミニウム層と前記プラチナ層の前記露出された領域における前記合金化されたアルミニウム及びプラチナとのエッチングが、希王水3HCL:HNO3+H2Oエッチャントを用いるウェットエッチ浸漬槽プロセスを含む、方法。
- 請求項1に記載の方法であって、前記アルミニウム層と前記プラチナ層の前記露出された領域における前記合金化されたアルミニウム及びプラチナとのエッチングが、3:1のHCl:H2O2の希釈エッチャントを用いるウェットエッチ噴霧ツールプロセスを含む、方法。
- 請求項1に記載の方法であって、
前記パターン化されたフォトレジスト層が形成される前に、前記半導体基板上の前記プラチナ層上に薄いハードマスク層を形成することを更に含む、方法。 - 請求項4に記載の方法であって、
前記薄いハードマスク層が、SiO2の物理電気化学的気相成長PECVDによって形成され、
前記方法が、
前記パターン化されたフォトレジスト層に従って前記薄いハードマスクをパターン化するため及び前記フォトレジスト層を除去するために、ウェットエッチングを実施すること、
を更に含む、方法。 - 請求項1に記載の方法であって、前記プラチナ層及び前記露出された領域の上に前記アルミニウム層を堆積することが、スパッタ堆積プロセスを実施することを含む、方法。
- 請求項1に記載の方法であって、前記プラチナ層の前記露出された領域においてアルミニウム及びプラチナの合金を形成することが、前記プラチナ層における前記露出された領域において前記合金を形成するために窒素雰囲気中でのアニーリングを含む、方法。
- 請求項1に記載の方法であって、前記プラチナ層を堆積する前に、前記半導体基板の上に接着材層を形成することを更に含む、方法。
- 請求項8に記載の方法であって、前記接着材層がアルミニウム酸化物Al2O3を含む、方法。
- 請求項1に記載の方法であって、前記基板上に前記プラチナ層を堆積することが、スパッタ堆積プロセスを実施することを含む、方法。
- 請求項10に記載の方法であって、前記プラチナ層が0.4μmの厚みを有する、方法。
- 請求項6に記載の方法であって、前記アルミニウム層が0.8μm又はそれ以上の厚みを有する、方法。
- 請求項5に記載の方法であって、HF又はBHF中で短時間浸漬を行うことによって前記薄いハードマスク層を除去することを更に含む、方法。
- プラチナをパターン化する方法であって、
半導体基板の上に接着材層を堆積すること、
前記半導体基板上にプラチナ層をスパッタ堆積すること、
前記プラチナ層における露出された領域を残して、パターン化されたフォトレジスト層を前記プラチナ層上に形成すること、
前記プラチナ層及び前記露出された領域上に、アルミニウム層をスパッタ堆積すること、
窒素雰囲気中でアニーリングすることにより前記プラチナ層の前記露出された領域においてアルミニウム及びプラチナの合金を形成して、前記プラチナ層の前記露出された領域においてPtAl2合金を形成すること、及び
希王水3HCL:HNO3+H2Oエッチャントを用いるウェットエッチ浸漬槽プロセスを行うことによって、前記アルミニウム層と前記プラチナ層の前記露出された領域における前記合金化されたアルミニウム及びプラチナとをエッチングすることであって、それにより前記プラチナ層の残っている部分を残して、パターン化されたプラチナ層を前記基板上に形成すること、
を含む、方法。 - 請求項14に記載の方法であって、
前記パターン化されたフォトレジスト層に従って薄いハードマスクをパターン化するため及び前記フォトレジスト層を除去するためにウェットエッチを行うことにより、前記パターン化されたフォトレジスト層が形成される前に前記半導体基板上の前記プラチナ層上に前記薄いハードマスク層を形成することを更に含む、方法。 - 請求項14に記載の方法であって、前記薄いハードマスク層が、SiO2の物理的電気化学的気相成長PECVDによって形成される、方法。
- 請求項15に記載の方法であって、前記薄いハードマスク層が、HF又はBHF中で短時間浸漬を行うことによって除去される、方法。
- 請求項14に記載の方法であって、前記プラチナ層が0.4μmの厚みを有し、前記アルミニウム層が0.8μmの厚みを有する、方法。
- プラチナをパターン化する方法であって、
半導体基板上にプラチナ層を堆積すること、
前記プラチナ層において露出された領域を残して、前記プラチナ層の上にパターン化されたフォトレジスト層を形成すること、
前記プラチナ層及び前記露出された領域の上にアルミニウム層を堆積すること、
前記プラチナ層の前記露出された領域においてPtAl2合金を形成するため、窒素雰囲気中でアニーリングすることにより前記プラチナ層の前記露出された領域においてアルミニウム及びプラチナの合金を形成すること、
3:1のHCl:H2O2の希薄エッチャントを用いてウェットエッチ噴霧ツールプロセスを行うことにより、前記プラチナ層の前記露出された領域において前記アルミニウム層と前記合金化されたアルミニウム及びプラチナとをエッチングし、それにより、パターン化された前記プラチナ層を前記基板上に形成するように前記プラチナ層の残っている部分が残されること、
を含む、方法。 - 請求項19に記載の方法であって、
前記パターン化されたフォトレジスト層に従って薄いハードマスクをパターン化するため及び前記フォトレジスト層を除去するためにウェットエッチングを行うことによって、前記パターン化されたフォトレジスト層が形成される前に前記半導体基板上の前記プラチナ層上に前記薄いハードマスク層を形成することを含む、方法。 - 請求項20に記載の方法であって、前記プラチナ層が、スパッタ堆積プロセスによって堆積され、0.4μmの厚みを有し、前記アルミニウム層が、スパッタ堆積プロセスによって堆積され、0.8μmの厚みを有する、方法。
- 請求項20に記載の方法であって、
半導体基板上にプラチナ層を堆積すること、
前記プラチナ層の上にアルミニウム層を堆積すること、
前記アルミニウム層における露出された領域を残して、パターン化されたフォトレジスト層を前記アルミニウム層の上に形成すること、
ウェットエッチングプロセスを行うことにより、前記アルミニウム層の前記露出された領域をエッチングすること、
前記フォトレジスト層を除去すること、
酸素雰囲気において、前記アルミニウム層の前記露出された領域においてプラチナ及びアルミニウムの合金を形成すること、及び
希釈プラチナエッチング化学エッチャントを用いてウェットエッチプロセスを行うことによって前記合金化されたアルミニウム及びプラチナをエッチングすることであって、それによって前記プラチナ層の残っている部分を残して、パターン化されたプラチナ層を前記基板上に形成すること、
を含む、方法。 - 請求項22に記載の方法であって、前記アルミニウム層の前記露出された領域をエッチングするための前記ウェットエッチプロセスが、リン酸を含むエッチャント材料を用いる、方法。
- 請求項22に記載の方法であって、前記合金化されたアルミニウム及びプラチナをエッチングするために希薄プラチナエッチング化学エッチャントを用いる前記ウェットエッチプロセスが、3:1のHCl:H2O2の希薄エッチャントを用いるウェットエッチ噴霧ツールプロセスである、方法。
- 請求項22に記載の方法であって、前記合金化されたアルミニウム及びプラチナをエッチングするための希釈されたプラチナエッチング化学エッチャントを用いる前記ウェットエッチプロセスが、希釈された王水3HCL:HNO3+H2Oエッチャントを用いるウェットエッチ浸漬槽プロセスである、方法。
- マイクロ電子デバイスであって、
半導体基板、及び
前記基板の頂部表面上のプラチナ電極、
を含み、
前記プラチナ電極が0.1μmに等しいかそれより大きい厚みを有する、
マイクロ電子デバイス。 - 請求項26に記載のマイクロ電子デバイスであって、前記プラチナ電極が0.4μmに等しいかそれより大きい厚みを有する、マイクロ電子デバイス。
- 請求項26に記載のマイクロ電子デバイスであって、前記プラチナ電極が、0.1μm〜lμmの範囲の厚みを有する、マイクロ電子デバイス。
- 電子化学センサであって、請求項26に記載のマイクロ電子デバイスを含む電子化学センサ。
- 測温抵抗体(RTD)であって、請求項26に記載のマイクロ電子デバイスを含む、抵抗温度計デバイス。
- マイクロ電子デバイスを形成する方法であって、
頂部表面を有する基板を提供すること、
前記基板の前記頂部表面上に第1の金属の層を形成すること、
前記第1の金属の層において露出された領域を残して、パターン化されたフォトレジスト層を前記第1の金属の層上に形成すること、
前記第1の金属の層における前記露出された領域の上に第2の金属の層を形成すること、
前記第1の金属の層の前記露出された領域において前記第1金属及び前記第2の金属の合金を形成すること、及び
前記第1の金属の層と、前記合金化された第1及び第2の金属の層とを、前記第1の金属の層の前記露出された領域においてエッチングすることであって、それによって前記第1の金属の層の残っている部分を残して、第1の金属のパターン化された層を前記基板上に形成すること、
を含み、
前記第1の金属が不活性金属であり、前記第2の金属が、前記不活性金属とともにエッチング可能合金を容易に形成する金属であり、
前記エッチング可能合金が、前記不活性金属よりもエッチングに対する感受性が大きい、
方法。 - 請求項31に記載の方法であって、前記第1の金属の層と前記合金化された第1及び第2の金属とをエッチングすることが、選択的ウェットエッチプロセスで行われる、方法。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4868437A (ja) * | 1971-12-18 | 1973-09-18 | ||
JPS54137273A (en) * | 1978-04-17 | 1979-10-24 | Nec Corp | Semiconductor device |
JPH11265985A (ja) * | 1998-01-08 | 1999-09-28 | Internatl Business Mach Corp <Ibm> | エッチング可能な複数金属組成の形成による金属パタ―ニング |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US4740485A (en) * | 1986-07-22 | 1988-04-26 | Monolithic Memories, Inc. | Method for forming a fuse |
DE4402117C2 (de) | 1994-01-25 | 1995-11-23 | Siemens Matsushita Components | Hochtemperatur-Gassensor und Verfahren zu seiner Herstellung |
US6790786B2 (en) * | 2002-03-05 | 2004-09-14 | Micron Technology, Inc. | Etching processes for integrated circuit manufacturing including methods of forming capacitors |
EP1591776A1 (en) | 2004-04-30 | 2005-11-02 | Henkel KGaA | Gas sensor for the determination of isocyanates using metal oxide semiconductors |
WO2008044803A1 (en) | 2006-10-13 | 2008-04-17 | Korea Institute Of Science And Technology | Method for manufacturing metal structure and carbon nano tube by using immersion plating |
JP5865634B2 (ja) * | 2011-09-06 | 2016-02-17 | 三菱電機株式会社 | 配線膜の製造方法 |
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CA2827946A1 (en) * | 2012-09-19 | 2014-03-19 | The Governors Of The University Of Alberta | Piezoelectric apparatus for harvesting energy for portable electronics and method for manufacturing same |
US10276362B2 (en) | 2016-04-29 | 2019-04-30 | Infineon Technologies Ag | Method for processing a semiconductor region and an electronic device |
US10297497B2 (en) | 2017-01-19 | 2019-05-21 | Texas Instruments Incorporated | Sacrificial layer for platinum patterning |
US10504733B2 (en) | 2017-01-19 | 2019-12-10 | Texas Instruments Incorporated | Etching platinum-containing thin film using protective cap layer |
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---|---|---|---|---|
JPS4868437A (ja) * | 1971-12-18 | 1973-09-18 | ||
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JPH11265985A (ja) * | 1998-01-08 | 1999-09-28 | Internatl Business Mach Corp <Ibm> | エッチング可能な複数金属組成の形成による金属パタ―ニング |
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