JP7476369B2 - 配線板を備えるユニット、モジュールおよび機器 - Google Patents
配線板を備えるユニット、モジュールおよび機器 Download PDFInfo
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- JP7476369B2 JP7476369B2 JP2023009353A JP2023009353A JP7476369B2 JP 7476369 B2 JP7476369 B2 JP 7476369B2 JP 2023009353 A JP2023009353 A JP 2023009353A JP 2023009353 A JP2023009353 A JP 2023009353A JP 7476369 B2 JP7476369 B2 JP 7476369B2
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Description
電子デバイスを搭載するための搭載部を有する第1面と、前記第1面とは反対の第2面と、前記第1面および前記第2面に連続する端面と、を有する配線板と、
前記端面を覆い、前記搭載部の上方の空間を挟むように設けられた樹脂部材と、を備えるユニットであって、
前記第2面を覆う絶縁体膜をさらに備え、
前記絶縁体膜の縁の少なくとも一部が前記第2面の前記端面の側の端から離間していることを特徴とする。
電子デバイスを搭載するための搭載部を有する第1面と、前記第1面とは反対の第2面と、前記第1面および前記第2面に連続する端面と、を有する配線板と、
前記端面を覆い、前記搭載部の上方の空間を挟むように設けられた樹脂部材と、を備えるユニットであって、
前記第2面の上に前記配線板に固定された電子部品をさらに備え、
前記樹脂部材は前記第2面を覆う部分を有し、前記部分が前記電子部品に重ならないことを特徴とする。
図1(a)に第1実施形態に係る実装ユニット100の断面模式図を示す。図1(b)に図1(a)における部位Aの拡大断面図を示す。
図2(a)に第2実施形態に係る実装ユニット100の断面模式図を示す。図2(b)に図2(a)における部位Bの拡大断面図を示す。
図3(a)に第3実施形態に係る実装ユニット100の断面模式図を示す。図3(b)に図3(a)における部位Cの拡大断面図を示す。
図6(a)に第4実施形態に係る電子モジュール200の断面模式図を示す。電子モジュール200は、上述した実装ユニット100と、実装ユニット100の搭載部40に搭載された電子デバイス20と、を備える。第4実施形態における実装ユニット100は、第1実施形態と第3実施形態の特徴を兼ね備えているが、他の実施形態の実装ユニット100の特徴を備えていてもよい。ただし、本実施形態では、厚さT5が電子部品16の高さよりも小さくなっている。
図6(b)に第5実施形態に係る電子モジュール200の断面模式図を示す。第5実施形態で第4実施形態と同じであってよい点については説明を省略する。
図7に第6実施形態に係る電子機器EQPの模式図を示す。電子モジュールAPRを含む機器EQPを示す模式図である。電子モジュールAPRが、電子デバイスICとパッケージPKGを含む。電子モジュールAPRには、上述した実施形態の電子モジュール200を適用可能であり、電子デバイスICには上述した実施形態の電子デバイス20を適用可能である。パッケージPKGは、電子モジュール200の内の電子デバイス20以外の構成に相当し、上述した実施形態の実装ユニット100や、上述した実施形態の電子モジュール200における対向部材25が適用可能である。
3 端面
4 表面
5 裏面
6 絶縁体膜
8 樹脂部材
12 縁
13 端
40 搭載部
41 空間
100 実装ユニット
200 電子モジュール
EQP 機器
Claims (22)
- 電子デバイスを搭載するための搭載部を有する第1面と、前記第1面とは反対の第2面と、前記第1面および前記第2面に連続する端面と、を有する配線板と、
前記端面と、前記第2面の少なくとも一部と、を覆い、前記搭載部の上方の空間を挟むように設けられた樹脂部材と、を備えるユニットであって、
前記樹脂部材は、前記第1面に対する平面視において前記配線板に重ならない拡張部を有し、
前記拡張部には前記第1面と交差する方向に貫通する貫通孔が設けられている
ことを特徴とするユニット。 - 前記第2面を覆う絶縁体膜をさらに備え、
前記絶縁体膜の縁の少なくとも一部が前記第2面の前記端面の側の端から離間しており、
前記第2面のうちの前記絶縁体膜の前記縁の前記一部と前記第2面の前記端との間の領域を、前記樹脂部材が覆うことを特徴とする請求項1に記載のユニット。 - 前記領域の上における前記樹脂部材の厚さと、前記絶縁体膜の厚さとの差が、前記絶縁体膜の厚さよりも小さい、請求項2に記載のユニット。
- 前記領域の上における前記樹脂部材の厚さと、前記絶縁体膜の厚さとの差が、前記絶縁体膜の厚さよりも大きい、請求項2に記載のユニット。
- 前記第2面を覆う絶縁体膜をさらに備え、
前記絶縁体膜の縁の少なくとも一部が前記第2面の前記端面の側の端から離間しており、
前記絶縁体膜の一部分が、前記樹脂部材と前記第2面との間に位置する請求項1から4のいずれか1項に記載のユニット。 - 前記第2面に固定された電子部品を備え、
前記樹脂部材は前記第2面を覆う部分を有し、前記部分が前記電子部品に重ならないことを特徴とする請求項1から5のいずれか1項に記載のユニット。 - 前記電子部品は前記搭載部に重なる、請求項6に記載のユニット。
- 前記樹脂部材は前記電子部品を挟むように設けられている、請求項6に記載のユニット。
- 前記配線板は、基板と、前記基板の上に設けられた導電体層と、を含み、前記基板および前記導電体層が前記第2面を構成していることを特徴とする請求項1から8のいずれか1項に記載のユニット。
- 前記樹脂部材は、前記第1面に対する平面視において前記導電体層に重ならないことを特徴とする請求項9に記載のユニット。
- 前記第1面の上に位置する部分の前記樹脂部材の厚さが、前記第2面の下に位置する部分の前記樹脂部材の厚さよりも大きいことを特徴とする請求項1から10のいずれか1項に記載のユニット。
- 前記樹脂部材の前記拡張部の厚さが、前記第2面の下に位置する部分の前記樹脂部材の厚さよりも大きい、請求項1から11のいずれか1項に記載のユニット。
- 前記樹脂部材は前記空間を囲むように設けられている、請求項1から12のいずれか1項に記載のユニット。
- 前記配線板はガラスエポキシ基板を含み、前記樹脂部材はモールド成型部材であることを特徴とする請求項1から13のいずれか1項に記載のユニット。
- 前記樹脂部材の中には前記配線板と同じ材料からなる繊維状の固形物が埋設されていることを特徴とする請求項1から14のいずれか1項に記載のユニット。
- 請求項1から15のいずれか1項に記載のユニットと、
前記搭載部に搭載された電子デバイスと、を備えるモジュール。 - 前記貫通孔に配された固定具によって固定される、請求項16に記載のモジュール。
- 前記電子デバイスと前記配線板とを電気的に接続するボンディングワイヤを備える、請求項16または17に記載のモジュール。
- 前記電子デバイスに対向する対向部材を備え、
前記対向部材は前記樹脂部材に固定されている、請求項16から18のいずれか1項に記載のモジュール。 - 前記電子デバイスは撮像デバイスまたは表示デバイスである、請求項16から19のいずれか1項に記載のモジュール。
- 請求項16から20のいずれか1項に記載のモジュールを備える機器であって、
前記電子デバイスに対応付けられた光学系、
前記電子デバイスを制御する制御装置、
前記電子デバイスから出力された信号を処理する処理装置、
前記電子デバイスで得られた情報を表示する表示装置、および、
前記電子デバイスで得られた情報を記憶する記憶装置
の少なくともいずれかを更に備えることを特徴とする機器。 - 請求項16から20のいずれか1項に記載のモジュールを備える機器であって、
前記モジュールを移動させる機械装置を備えることを特徴とする機器。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003142616A (ja) | 2001-11-08 | 2003-05-16 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2013243339A (ja) | 2012-04-27 | 2013-12-05 | Canon Inc | 電子部品、電子モジュールおよびこれらの製造方法。 |
JP2015185763A (ja) | 2014-03-25 | 2015-10-22 | エムテックスマツムラ株式会社 | 半導体素子実装用中空パッケージ |
JP2016207956A (ja) | 2015-04-28 | 2016-12-08 | エムテックスマツムラ株式会社 | 中空パッケージの製造方法、固体撮像素子の製造方法、中空パッケージおよび固体撮像素子 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06350068A (ja) | 1993-06-03 | 1994-12-22 | Hamamatsu Photonics Kk | 半導体エネルギー線検出器の製造方法 |
JP2003110945A (ja) | 2001-09-26 | 2003-04-11 | Sanyo Electric Co Ltd | カメラモジュール |
JP3898666B2 (ja) | 2003-04-28 | 2007-03-28 | 松下電器産業株式会社 | 固体撮像装置およびその製造方法 |
JP4106003B2 (ja) | 2003-09-03 | 2008-06-25 | 松下電器産業株式会社 | 固体撮像装置の製造方法 |
JP4147171B2 (ja) | 2003-10-23 | 2008-09-10 | 松下電器産業株式会社 | 固体撮像装置およびその製造方法 |
JP2007019275A (ja) | 2005-07-07 | 2007-01-25 | Rohm Co Ltd | 半導体装置、基板及び半導体装置の製造方法 |
JP2008130738A (ja) | 2006-11-20 | 2008-06-05 | Fujifilm Corp | 固体撮像素子 |
TWI425718B (zh) * | 2011-06-21 | 2014-02-01 | Nat Chip Implementation Ct Nat Applied Res Lab | 連接座結構組及其連接座結構 |
WO2014061211A1 (ja) * | 2012-10-15 | 2014-04-24 | 富士電機株式会社 | 半導体装置 |
JP5498604B1 (ja) | 2013-04-17 | 2014-05-21 | エムテックスマツムラ株式会社 | 固体撮像素子用中空パッケージ |
CN106663731B (zh) * | 2014-08-05 | 2019-08-06 | 西铁城电子株式会社 | 半导体装置及其制造方法 |
JP6582754B2 (ja) * | 2015-08-31 | 2019-10-02 | 日亜化学工業株式会社 | 複合基板、発光装置、及び発光装置の製造方法 |
JP6648525B2 (ja) | 2015-12-28 | 2020-02-14 | 株式会社ニコン | 基板、撮像ユニットおよび撮像装置 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003142616A (ja) | 2001-11-08 | 2003-05-16 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2013243339A (ja) | 2012-04-27 | 2013-12-05 | Canon Inc | 電子部品、電子モジュールおよびこれらの製造方法。 |
JP2015185763A (ja) | 2014-03-25 | 2015-10-22 | エムテックスマツムラ株式会社 | 半導体素子実装用中空パッケージ |
JP2016207956A (ja) | 2015-04-28 | 2016-12-08 | エムテックスマツムラ株式会社 | 中空パッケージの製造方法、固体撮像素子の製造方法、中空パッケージおよび固体撮像素子 |
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