JP7464856B2 - β-ジケトン保存容器及び充填方法 - Google Patents
β-ジケトン保存容器及び充填方法 Download PDFInfo
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- 238000003860 storage Methods 0.000 title claims description 36
- 238000011049 filling Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 title claims description 22
- 239000011248 coating agent Substances 0.000 claims description 37
- 238000000576 coating method Methods 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000007788 liquid Substances 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 24
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- -1 silicon carbide nitride Chemical class 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical group FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 8
- 239000010432 diamond Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910018134 Al-Mg Inorganic materials 0.000 claims description 5
- 229910021365 Al-Mg-Si alloy Inorganic materials 0.000 claims description 5
- 229910018467 Al—Mg Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 238000009835 boiling Methods 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 125000001153 fluoro group Chemical group F* 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000010935 stainless steel Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910001220 stainless steel Inorganic materials 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 150000002430 hydrocarbons Chemical class 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 238000010828 elution Methods 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- SHXHPUAKLCCLDV-UHFFFAOYSA-N 1,1,1-trifluoropentane-2,4-dione Chemical compound CC(=O)CC(=O)C(F)(F)F SHXHPUAKLCCLDV-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910021387 carbon allotrope Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- GRHYFDZMGZYXAP-UHFFFAOYSA-N 1,1,1,3,5,5,5-heptafluoropentane-2,4-dione Chemical compound FC(F)(F)C(=O)C(F)C(=O)C(F)(F)F GRHYFDZMGZYXAP-UHFFFAOYSA-N 0.000 description 1
- RPXLNSNMPLHDLQ-UHFFFAOYSA-N 1,1,1,5,5,5-hexafluoro-3-methylpentane-2,4-dione Chemical compound FC(F)(F)C(=O)C(C)C(=O)C(F)(F)F RPXLNSNMPLHDLQ-UHFFFAOYSA-N 0.000 description 1
- SJLDJXFXIRENRV-UHFFFAOYSA-N 1,1,1,6,6,6-hexafluorohexane-2,4-dione Chemical compound FC(F)(F)CC(=O)CC(=O)C(F)(F)F SJLDJXFXIRENRV-UHFFFAOYSA-N 0.000 description 1
- BVPKYBMUQDZTJH-UHFFFAOYSA-N 1,1,1-trifluoro-5,5-dimethylhexane-2,4-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(F)(F)F BVPKYBMUQDZTJH-UHFFFAOYSA-N 0.000 description 1
- VVXLFFIFNVKFBD-UHFFFAOYSA-N 4,4,4-trifluoro-1-phenylbutane-1,3-dione Chemical compound FC(F)(F)C(=O)CC(=O)C1=CC=CC=C1 VVXLFFIFNVKFBD-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920013653 perfluoroalkoxyethylene Polymers 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- TXBBUSUXYMIVOS-UHFFFAOYSA-N thenoyltrifluoroacetone Chemical compound FC(F)(F)C(=O)CC(=O)C1=CC=CS1 TXBBUSUXYMIVOS-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D23/00—Details of bottles or jars not otherwise provided for
- B65D23/02—Linings or internal coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D7/00—Containers having bodies formed by interconnecting or uniting two or more rigid, or substantially rigid, components made wholly or mainly of metal
- B65D7/42—Details of metal walls
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D85/00—Containers, packaging elements or packages, specially adapted for particular articles or materials
- B65D85/70—Containers, packaging elements or packages, specially adapted for particular articles or materials for materials not otherwise provided for
- B65D85/84—Containers, packaging elements or packages, specially adapted for particular articles or materials for materials not otherwise provided for for corrosive chemicals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D2501/00—Containers having bodies formed in one piece
- B65D2501/24—Boxes or like containers with moulded compartments or partitions
- B65D2501/24006—Details relating to bottle crates
- B65D2501/24012—Materials
- B65D2501/24025—Mainly metal
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Details Of Rigid Or Semi-Rigid Containers (AREA)
- Chemical Vapour Deposition (AREA)
Description
本実施形態のβ-ジケトン充填済み容器10を図1に示す。β-ジケトン充填済み容器10は、液体状のβ-ジケトンを金属製の保存容器11に充填して得られる。保存容器11中では、β-ジケトンは気相21と液相23に分かれている。保存容器11には、β-ジケトンの充填と取出が可能な取出口13が取り付けられており、気相21のβ-ジケトンを気体で供給することができる。その際に、β-ジケトン充填済み容器10を加熱し、液相23のβ-ジケトンの気化熱を補う必要がある。
本開示の好ましい実施形態において、金属製の保存容器11は、アルミニウム素材を用いて成形された容器であり、その内表面に二酸化ケイ素(SiO2)、窒化炭化ケイ素(SiCN)、ダイヤモンドライクカーボン(DLC)等の無機皮膜15が形成されている。本開示において、アルミニウム素材とは、JIS H 4000:2014にて規定された純アルミニウム及びアルミニウム合金をいう。
無機皮膜が薄すぎると、無機皮膜の欠陥などからβ-ジケトンと金属とが接触する可能性があるので、無機皮膜の膜厚は500nm以上あることが好ましい。
本実施形態におけるβ-ジケトンの充填方法は、前述の保存容器に液体状のβ-ジケトンを充填する充填工程を含むことを特徴とする。本実施形態の充填方法により、本実施形態のβ-ジケトン充填済み容器を得ることができる。
本実施形態におけるβ-ジケトンの供給方法は、前述の充填方法により得られたβ-ジケトン充填済み容器を、60℃以上に加熱して、気体のβ-ジケトンを供給する供給工程を含むことを特徴とする。
厚み1μmの二酸化ケイ素(SiO2)、窒化炭化ケイ素(SiCN)又はダイヤモンドライクカーボン(DLC)の無機皮膜を内表面に形成したAl(A1050)製容器、Al-Mg合金(A5052)製容器及びAl-Mg-Si系合金(A6061)製容器、並びに、無機皮膜を内表面に形成していないAl(A1050)製容器、Al-Mg合金(A5052)製容器及びAl-Mg-Si系合金(A6061)製容器を準備した。なお、SiO2の無機皮膜は、シリカの原料溶液を塗布したのち、300℃以上で焼成することによって得た。SiCNの無機皮膜は、PVD法により得た。DLCの無機皮膜は、プラズマCVD法により得た。いずれの無機皮膜も各材料の含有量が99質量%以上であった。
洗浄工程における温度を100℃から20℃に変更する以外は、実施例1及び比較例1と同様に、β-ジケトンの保存試験を行った。
厚み1μmのPFAを内表面に有するステンレス鋼(SUS304L)製容器を用いた以外は実施例1と同様に、β-ジケトンの保存試験を行った。
11 保存容器
13 取出口
15 無機皮膜
21 気相
23 液相
Claims (13)
- 内部に液体状のβ-ジケトンを充填するための金属製の保存容器に、液体状のβ-ジケトンが充填されていることを特徴とするβ-ジケトン充填済み容器であって、
前記金属が、アルミニウム素材であり、
前記保存容器の内表面が、二酸化ケイ素、窒化炭化ケイ素、炭化ケイ素、窒化ケイ素、ダイヤモンド及びダイヤモンドライクカーボンからなる群から選ばれる少なくとも1つの材料を含む無機皮膜を有する、
ことを特徴とする、β-ジケトン充填済み容器。 - 前記β-ジケトンが、化学式にフッ素原子を含むことを特徴とする請求項1に記載のβ-ジケトン充填済み容器。
- 前記アルミニウム素材が、純アルミニウム、Al-Mg合金、又はAl-Mg-Si系合金であることを特徴とする請求項1または2に記載のβ-ジケトン充填済み容器。
- 前記無機皮膜の膜厚が、10nm以上1000μm以下であることを特徴とする請求項1~3のいずれか1項に記載のβ-ジケトン充填済み容器。
- 前記保存容器が、前記β-ジケトンの1気圧での沸点以上に加熱されて使用されることを特徴とする請求項1~4のいずれか1項に記載のβ-ジケトン充填済み容器。
- 前記β-ジケトンが、ヘキサフルオロアセチルアセトンであり、
前記無機皮膜が、二酸化ケイ素、窒化炭化ケイ素及びダイヤモンドライクカーボンからなる群から選ばれる少なくとも1つの材料を含み、
前記無機皮膜の膜厚が、500nm以上50μm以下である
ことを特徴とする請求項1に記載のβ-ジケトン充填済み容器。 - 前記無機皮膜が、二酸化ケイ素及び窒化炭化ケイ素からなる群から選ばれる少なくとも1つの材料を含むことを特徴とする請求項1~6のいずれか1項に記載のβ-ジケトン充填済み容器。
- 80℃で1年間保持した後でも、前記β-ジケトン中のアルミニウム濃度の増加量が50質量ppb以下であることを特徴とする請求項1~7のいずれか1項に記載のβ-ジケトン充填済み容器。
- 内表面に、二酸化ケイ素、窒化炭化ケイ素、炭化ケイ素、窒化ケイ素、ダイヤモンド、ダイヤモンドライクカーボンからなる群から選ばれる少なくとも1つの材料を含む無機皮膜が形成されている、アルミニウム素材製の保存容器に、液体状のβ-ジケトンを充填する充填工程を含むことを特徴とする、β-ジケトンの充填方法。
- 前記充填工程の前に、前記保存容器の内表面を、10℃以上の温度で、前記充填工程で充填するβ-ジケトンと同じβ-ジケトンにより洗浄する洗浄工程を有することを特徴とする請求項9に記載のβ-ジケトンの充填方法。
- 前記洗浄工程の温度が、80℃以上であることを特徴とする請求項10に記載のβ-ジケトンの充填方法。
- 請求項1~8のいずれか1項に記載のβ-ジケトン充填済み容器、あるいは請求項9~11のいずれか1項に記載の充填方法により得られたβ-ジケトン充填済み容器を、60℃以上に加熱して、β-ジケトンを気体で供給する供給工程を含むことを特徴とする、β-ジケトンの供給方法。
- 前記供給工程では、前記β-ジケトン充填済み容器を、80℃以上に加熱することを特徴とする請求項12に記載のβ-ジケトンの供給方法。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006176180A (ja) | 2004-12-24 | 2006-07-06 | Central Glass Co Ltd | ヘキサフルオロアセチルアセトンの保存方法 |
US8590705B2 (en) | 2010-06-11 | 2013-11-26 | Air Products And Chemicals, Inc. | Cylinder surface treated container for monochlorosilane |
US20140367300A1 (en) | 2013-06-14 | 2014-12-18 | S.C. Johnson & Son, Inc. | Chelating system for a polymer lined steel container |
JP2017190165A (ja) | 2016-04-14 | 2017-10-19 | Dic株式会社 | 有機材料の貯蔵又は運搬のための容器 |
WO2018128079A1 (ja) | 2017-01-04 | 2018-07-12 | セントラル硝子株式会社 | ドライエッチング方法及びβ-ジケトン充填済み容器 |
JP6517994B1 (ja) | 2018-10-26 | 2019-05-22 | アドバンストマテリアルテクノロジーズ株式会社 | 保護膜、保護膜付き容器、その製造方法及びプラズマcvd装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6269787A (ja) * | 1985-09-24 | 1987-03-31 | Sanyo Hoso Kk | テレビジヨン放送方式 |
JP2882421B2 (ja) | 1990-11-30 | 1999-04-12 | サンレックス工業株式会社 | フッ素樹脂ライニング薬品容器とその製造方法 |
JP2957728B2 (ja) * | 1991-02-19 | 1999-10-06 | 北海製罐株式会社 | 缶体及びその製造方法 |
JP5407290B2 (ja) | 2008-11-14 | 2014-02-05 | 宇部興産株式会社 | 充填容器及び当該充填容器を用いた低融点化合物の気化供給方法 |
DE102010011185A1 (de) | 2010-03-12 | 2011-09-15 | Epg (Engineered Nanoproducts Germany) Ag | Metallische Oberflächen mit dünner, glas- oder keramikartiger Schutzschicht mit hoher chemischer Beständigkeit und verbesserten Antihaft-Eigenschaften |
JP6399083B2 (ja) * | 2014-03-12 | 2018-10-03 | Jsr株式会社 | 多層レジストプロセス用組成物および該多層レジストプロセス用組成物を用いたパターン形成方法 |
JP6883733B2 (ja) | 2017-12-06 | 2021-06-09 | パナソニックIpマネジメント株式会社 | 水素生成装置及びその運転方法 |
KR102244395B1 (ko) * | 2018-03-30 | 2021-04-23 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 에칭 장치 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006176180A (ja) | 2004-12-24 | 2006-07-06 | Central Glass Co Ltd | ヘキサフルオロアセチルアセトンの保存方法 |
US8590705B2 (en) | 2010-06-11 | 2013-11-26 | Air Products And Chemicals, Inc. | Cylinder surface treated container for monochlorosilane |
US20140367300A1 (en) | 2013-06-14 | 2014-12-18 | S.C. Johnson & Son, Inc. | Chelating system for a polymer lined steel container |
JP2017190165A (ja) | 2016-04-14 | 2017-10-19 | Dic株式会社 | 有機材料の貯蔵又は運搬のための容器 |
WO2018128079A1 (ja) | 2017-01-04 | 2018-07-12 | セントラル硝子株式会社 | ドライエッチング方法及びβ-ジケトン充填済み容器 |
JP6517994B1 (ja) | 2018-10-26 | 2019-05-22 | アドバンストマテリアルテクノロジーズ株式会社 | 保護膜、保護膜付き容器、その製造方法及びプラズマcvd装置 |
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