JP6885871B2 - 固体ソース送出用の高純度タングステンヘキサカルボニル - Google Patents
固体ソース送出用の高純度タングステンヘキサカルボニル Download PDFInfo
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- JP6885871B2 JP6885871B2 JP2017546780A JP2017546780A JP6885871B2 JP 6885871 B2 JP6885871 B2 JP 6885871B2 JP 2017546780 A JP2017546780 A JP 2017546780A JP 2017546780 A JP2017546780 A JP 2017546780A JP 6885871 B2 JP6885871 B2 JP 6885871B2
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- tungsten
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- 239000007787 solid Substances 0.000 title claims description 105
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 title claims description 42
- 239000000463 material Substances 0.000 claims description 122
- 229910052721 tungsten Inorganic materials 0.000 claims description 71
- 239000010937 tungsten Substances 0.000 claims description 71
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 67
- 239000002245 particle Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 34
- 239000002994 raw material Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 17
- 229910052750 molybdenum Inorganic materials 0.000 claims description 17
- 239000011733 molybdenum Substances 0.000 claims description 17
- 238000005245 sintering Methods 0.000 claims description 11
- 238000007740 vapor deposition Methods 0.000 claims description 7
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 30
- 239000003708 ampul Substances 0.000 description 26
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 16
- 229910002091 carbon monoxide Inorganic materials 0.000 description 16
- 239000002243 precursor Substances 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 238000000231 atomic layer deposition Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000011065 in-situ storage Methods 0.000 description 5
- 238000004377 microelectronic Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000006200 vaporizer Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 4
- -1 tungsten nitride Chemical class 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000007596 consolidation process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004491 TaAlN Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000006315 carbonylation Effects 0.000 description 1
- 238000005810 carbonylation reaction Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004440 column chromatography Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000000260 fractional sublimation Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000012265 solid product Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 150000003658 tungsten compounds Chemical class 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G41/00—Compounds of tungsten
- C01G41/006—Compounds containing, besides tungsten, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
固体ソース送出用の高純度タングステンヘキサカルボニル(HIGH−PURITY TUNGSTEN HEXACARBONYL FOR SOLID SOURCE DELIVERY)についてのThomas H.Baum、Robert L.Wright,Jr.、Scott L.Battle、及びJohn M.Clearyの名義による2015年3月6日出願の米国仮特許出願第62/129368号の優先権を米国特許法第119条の下でここに主張する。米国仮特許出願第62/129368号の開示は、あらゆる目的のためにその全体が出典明示により本明細書に援用される。
タングステンヘキサカルボニルの気化試験を行って、タングステンヘキサカルボニル固体ソース材料を評価した。
Claims (12)
- 気相成長法によりタングステン含有膜を形成するための、焼結された粒子状タングステンヘキサカルボニルの焼結タングステンヘキサカルボニルである固体ソース材料であって、モリブデンの含量が1000ppm未満である、固体ソース材料。
- モリブデンの含量が300ppm未満である、請求項1に記載の固体ソース材料。
- モリブデンの含量が10ppm未満である、請求項1に記載の固体ソース材料。
- 径が5mm未満である粒子の粒子状タングステンヘキサカルボニルの焼結タングステンヘキサカルボニルである固体ソース材料である、請求項1に記載の固体ソース材料。
- 1.4mmを上回る径の粒子が粒子の15%未満である、請求項4に記載の固体ソース材料。
- 0.25mm〜1.4mmの径の粒子が粒子の少なくとも50%である、請求項4に記載の固体ソース材料。
- 0.25mm〜1.4mmの径の粒子が粒子の少なくとも70%である、請求項4に記載の固体ソース材料。
- 粒子の少なくとも80%が0.25mm未満の径の粒子である、請求項4に記載の固体ソース材料。
- タングステン含有膜を形成するための固体ソース材料を形成する方法であって、径が5mm未満である粒子の粒子状タングステンヘキサカルボニル原料であって、1.4mmを上回る径の粒子が粒子の15%未満であり、モリブデンの含量が1000ppm未満である原料を用意することと、
粒子状タングステンヘキサカルボニル原料を100℃未満の温度で焼結して、タングステン含有膜を形成するための固体ソース材料を焼結固体として作製することと
を含む方法。 - 基材上にタングステン含有膜を形成する方法であって、請求項1に記載の固体ソース材料を揮発させて、タングステン固体ソース材料蒸気を形成することと、気相成長条件下でタングステン固体ソース材料蒸気を基材と接触させて、基材上にタングステン含有膜を形成することとを含む方法。
- 接触させることが200℃未満の温度で行われる、請求項10に記載の方法。
- 請求項1に記載の固体ソース材料を入れた容器を含む、タングステン固体ソース材料供給パッケージ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562129368P | 2015-03-06 | 2015-03-06 | |
US62/129,368 | 2015-03-06 | ||
PCT/US2016/019995 WO2016144579A1 (en) | 2015-03-06 | 2016-02-28 | High-purity tungsten hexacarbonyl for solid source delivery |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018510265A JP2018510265A (ja) | 2018-04-12 |
JP6885871B2 true JP6885871B2 (ja) | 2021-06-16 |
Family
ID=56880475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017546780A Active JP6885871B2 (ja) | 2015-03-06 | 2016-02-28 | 固体ソース送出用の高純度タングステンヘキサカルボニル |
Country Status (6)
Country | Link |
---|---|
US (1) | US10526697B2 (ja) |
JP (1) | JP6885871B2 (ja) |
KR (2) | KR20170126962A (ja) |
CN (1) | CN107429388B (ja) |
TW (1) | TWI636985B (ja) |
WO (1) | WO2016144579A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11578406B2 (en) | 2020-12-08 | 2023-02-14 | Applied Materials, Inc. | Ampoule for a semiconductor manufacturing precursor |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS4839235B1 (ja) | 1968-09-17 | 1973-11-22 | ||
JPS4839235A (ja) * | 1971-09-07 | 1973-06-09 | ||
JP4634567B2 (ja) * | 2000-04-17 | 2011-02-16 | 株式会社東芝 | タングステンスパッタリングターゲットの製造方法 |
JP2002249455A (ja) * | 2001-02-21 | 2002-09-06 | Nippon Sanso Corp | 高純度ハフニウム錯体Hf(DPM)4の製造方法 |
JP2003055758A (ja) * | 2001-08-10 | 2003-02-26 | Nikko Materials Co Ltd | スッパタリング用タングステン焼結体ターゲット及びその製造方法 |
JP4826066B2 (ja) | 2004-04-27 | 2011-11-30 | 住友金属鉱山株式会社 | 非晶質の透明導電性薄膜およびその製造方法、並びに、該非晶質の透明導電性薄膜を得るためのスパッタリングターゲットおよびその製造方法 |
US7708835B2 (en) * | 2004-11-29 | 2010-05-04 | Tokyo Electron Limited | Film precursor tray for use in a film precursor evaporation system and method of using |
US7638002B2 (en) * | 2004-11-29 | 2009-12-29 | Tokyo Electron Limited | Multi-tray film precursor evaporation system and thin film deposition system incorporating same |
US7484315B2 (en) | 2004-11-29 | 2009-02-03 | Tokyo Electron Limited | Replaceable precursor tray for use in a multi-tray solid precursor delivery system |
JP4614908B2 (ja) * | 2005-05-11 | 2011-01-19 | 日立粉末冶金株式会社 | 冷陰極蛍光ランプ用電極 |
JP4317174B2 (ja) * | 2005-09-21 | 2009-08-19 | 東京エレクトロン株式会社 | 原料供給装置および成膜装置 |
CN1332965C (zh) | 2005-11-29 | 2007-08-22 | 钢铁研究总院 | 一种由钨合金废料合成羰基钨的方法 |
JP4960720B2 (ja) * | 2006-02-10 | 2012-06-27 | 東京エレクトロン株式会社 | 膜前駆体蒸発システムにおいて使用される膜前駆体のトレーおよびその使用方法 |
JP4839235B2 (ja) | 2007-01-23 | 2011-12-21 | 富士重工業株式会社 | 車両の左右駆動力配分装置 |
DE102009040078A1 (de) * | 2009-09-04 | 2011-03-10 | W.C. Heraeus Gmbh | Metallpaste mit CO-Vorläufern |
US9637395B2 (en) | 2012-09-28 | 2017-05-02 | Entegris, Inc. | Fluorine free tungsten ALD/CVD process |
CN104508176A (zh) * | 2012-11-02 | 2015-04-08 | 吉坤日矿日石金属株式会社 | 钨烧结体溅射靶和使用该靶形成的钨膜 |
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2016
- 2016-02-28 WO PCT/US2016/019995 patent/WO2016144579A1/en active Application Filing
- 2016-02-28 JP JP2017546780A patent/JP6885871B2/ja active Active
- 2016-02-28 KR KR1020177027668A patent/KR20170126962A/ko not_active IP Right Cessation
- 2016-02-28 US US15/556,102 patent/US10526697B2/en active Active
- 2016-02-28 CN CN201680018519.XA patent/CN107429388B/zh active Active
- 2016-02-28 KR KR1020207016790A patent/KR102360536B1/ko active IP Right Grant
- 2016-03-02 TW TW105106372A patent/TWI636985B/zh active
Also Published As
Publication number | Publication date |
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KR20200072562A (ko) | 2020-06-22 |
TW201638100A (zh) | 2016-11-01 |
TWI636985B (zh) | 2018-10-01 |
CN107429388A (zh) | 2017-12-01 |
US20180044787A1 (en) | 2018-02-15 |
WO2016144579A1 (en) | 2016-09-15 |
JP2018510265A (ja) | 2018-04-12 |
KR20170126962A (ko) | 2017-11-20 |
US10526697B2 (en) | 2020-01-07 |
KR102360536B1 (ko) | 2022-02-08 |
CN107429388B (zh) | 2020-08-14 |
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