JP7458457B2 - 高品質のボイド充填法のための流動性堆積及び高密度プラズマ処理工程サイクル - Google Patents
高品質のボイド充填法のための流動性堆積及び高密度プラズマ処理工程サイクル Download PDFInfo
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- JP7458457B2 JP7458457B2 JP2022171995A JP2022171995A JP7458457B2 JP 7458457 B2 JP7458457 B2 JP 7458457B2 JP 2022171995 A JP2022171995 A JP 2022171995A JP 2022171995 A JP2022171995 A JP 2022171995A JP 7458457 B2 JP7458457 B2 JP 7458457B2
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C—CHEMISTRY; METALLURGY
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- C23C16/32—Carbides
- C23C16/325—Silicon carbide
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Description
Claims (18)
- 基板を処理するためのクラスタツールであって、
ロードロックチャンバと、
前記ロードロックチャンバの第1の側面に連結された移送チャンバと、
前記移送チャンバに連結された複数の第1の処理チャンバであって、前記第1の処理チャンバの各々が流動性層の堆積を実施することができる堆積チャンバであり、前記第1の処理チャンバの少なくとも1つがシリコン含有誘電体層を堆積するように構成されている、複数の第1の処理チャンバと、
前記移送チャンバに連結された複数の第2の処理チャンバであって、前記第2の処理チャンバの各々が硬化処理を実施することができる硬化チャンバであり、前記第2の処理チャンバの少なくとも1つがUV光硬化チャンバであり、前記第2の処理チャンバの前記少なくとも1つは、酸素、窒素、又は不活性ガスを含むラジカル系雰囲気下で硬化処理を実施するように構成されている、複数の第2の処理チャンバと、
前記移送チャンバに連結された複数の第3の処理チャンバであって、前記第3の処理チャンバの各々がプラズマ硬化処理を実施することができるプラズマチャンバであり、前記第3の処理チャンバの少なくとも1つが誘導結合プラズマ(ICP)チャンバである、複数の第3の処理チャンバと、
前記ロードロックチャンバの第2の側面に連結されたファクトリインターフェースと、
前記基板を、前記第1の処理チャンバの前記少なくとも1つ、前記第2の処理チャンバの前記少なくとも1つ、前記第3の処理チャンバの前記少なくとも1つにこの順序で移送して処理するように構成された制御部と、
を備え、
前記複数の第1の処理チャンバは、前記複数の第2の処理チャンバ及び前記複数の第3の処理チャンバに隣接し、
前記ロードロックチャンバは、前記複数の第2の処理チャンバ及び前記複数の第3の処理チャンバに隣接する、
クラスタツール。 - 前記第1の処理チャンバの少なくとも1つは、プラズマ強化CVDチャンバ又は低大気圧CVDチャンバである、請求項1に記載のクラスタツール。
- 前記第1の処理チャンバの少なくとも1つは、高密度プラズマCVDチャンバである、請求項1に記載のクラスタツール。
- 前記第1の処理チャンバの少なくとも1つは、シロキサン化合物、又は一若しくは複数のハロゲン部分を含むハロゲン化されたシロキサン化合物を含むシリコン含有前駆体に通じている、請求項1に記載のクラスタツール。
- 前記第2の処理チャンバの少なくとも1つは、熱硬化チャンバ、マイクロ波硬化チャンバ、プラズマ硬化チャンバ、電子ビーム硬化チャンバ、又は中性ビーム硬化チャンバである、請求項1に記載のクラスタツール。
- 前記第3の処理チャンバの少なくとも1つは、容量結合プラズマ(CCP)チャンバである、請求項1に記載のクラスタツール。
- 前記第3の処理チャンバの少なくとも1つは、酸素/ヘリウム雰囲気、酸素/アルゴン雰囲気、又は酸素/水素雰囲気下で硬化処理を実施するように構成されている、請求項1に記載のクラスタツール。
- 基板を処理するためのクラスタツールであって、
ロードロックチャンバと、
前記ロードロックチャンバに連結された移送チャンバと、
前記移送チャンバに連結された複数の第1の処理チャンバであって、前記第1の処理チャンバの各々が流動性層の堆積を実施することができる堆積チャンバであり、前記第1の処理チャンバの少なくとも1つがシリコン含有誘電体層を堆積するように構成されている、複数の第1の処理チャンバと、
前記移送チャンバに連結された複数の第2の処理チャンバであって、前記第2の処理チャンバの少なくとも1つが熱硬化処理を実施することができる硬化チャンバであり、前記第2の処理チャンバの前記少なくとも1つは、酸素、窒素、又は不活性ガスを含むラジカル系雰囲気下で硬化処理を実施するように構成されている、複数の第2の処理チャンバと、
前記移送チャンバに連結された複数の第3の処理チャンバであって、前記第3の処理チャンバの少なくとも1つがプラズマ硬化処理を実施することができるプラズマチャンバであり、前記第3の処理チャンバの前記少なくとも1つが誘導結合プラズマ(ICP)チャンバである、複数の第3の処理チャンバと、
前記基板を、前記第1の処理チャンバの前記少なくとも1つ、前記第2の処理チャンバの前記少なくとも1つ、前記第3の処理チャンバの前記少なくとも1つにこの順序で移送して処理するように構成された制御部と、
を備え、
前記複数の第1の処理チャンバは、前記複数の第2の処理チャンバ及び前記複数の第3の処理チャンバに隣接し、
前記ロードロックチャンバは、前記複数の第2の処理チャンバ及び前記複数の第3の処理チャンバに隣接する、
クラスタツール。 - 前記第1の処理チャンバの少なくとも1つは、プラズマ強化CVDチャンバ又は低大気圧CVDチャンバである、請求項8に記載のクラスタツール。
- 前記第1の処理チャンバの少なくとも1つは、高密度プラズマCVDチャンバである、請求項8に記載のクラスタツール。
- 前記第1の処理チャンバの少なくとも1つは、シロキサン化合物、又は一若しくは複数のハロゲン部分を含むハロゲン化されたシロキサン化合物を含むシリコン含有前駆体に通じている、請求項8に記載のクラスタツール。
- 前記第2の処理チャンバの少なくとも1つは、UV光硬化チャンバ、熱硬化チャンバ、マイクロ波硬化チャンバ、プラズマ硬化チャンバ、電子ビーム硬化チャンバ、又は中性ビーム硬化チャンバである、請求項8に記載のクラスタツール。
- 前記第3の処理チャンバの少なくとも1つは、容量結合プラズマ(CCP)チャンバである、請求項8に記載のクラスタツール。
- 前記第3の処理チャンバの少なくとも1つは、酸素/ヘリウム雰囲気、酸素/アルゴン雰囲気、又は酸素/水素雰囲気下で硬化処理を実施するように構成されている、請求項8に記載のクラスタツール。
- 前記第2の処理チャンバの少なくとも1つは、UV光硬化チャンバである、請求項8に記載のクラスタツール。
- 基板を処理するためのクラスタツールであって、
ロードロックチャンバと、
前記ロードロックチャンバに連結された移送チャンバと、
前記移送チャンバに連結された複数の第1の処理チャンバであって、前記第1の処理チャンバの各々が化学気相堆積チャンバである、複数の第1の処理チャンバと、
前記移送チャンバに連結された複数の第2の処理チャンバであって、前記第2の処理チャンバの各々が硬化処理を実施することができるUV光硬化チャンバであり、前記第2の処理チャンバの少なくとも1つが酸素、窒素、又は不活性ガスを含むラジカル系雰囲気下で硬化処理を実施するように構成されている、複数の第2の処理チャンバと、
前記移送チャンバに連結された複数の第3の処理チャンバであって、前記第3の処理チャンバの各々がプラズマ硬化処理を実施することができる誘導結合プラズマ(ICP)チャンバである、複数の第3の処理チャンバと、
前記基板を、前記第1の処理チャンバの少なくとも1つ、前記第2の処理チャンバの前記少なくとも1つ、前記第3の処理チャンバの少なくとも1つにこの順序で移送して処理するように構成された制御部と、
を備え、
前記複数の第1の処理チャンバは、前記複数の第2の処理チャンバ及び前記複数の第3の処理チャンバに隣接し、
前記ロードロックチャンバは、前記複数の第2の処理チャンバ及び前記複数の第3の処理チャンバに隣接する、
クラスタツール。 - 前記第1の処理チャンバの少なくとも1つがシリコン含有誘電体層を堆積するように構成されており、前記第1の処理チャンバの少なくとも1つは、シロキサン化合物、又は一若しくは複数のハロゲン部分を含むハロゲン化されたシロキサン化合物を含むシリコン含有前駆体に通じている、請求項16に記載のクラスタツール。
- 前記第3の処理チャンバの少なくとも1つが、酸素/ヘリウム雰囲気、酸素/アルゴン雰囲気、又は酸素/水素雰囲気下で硬化処理を実施するように構成されている、請求項16に記載のクラスタツール。
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JP2019562616A JP7168586B2 (ja) | 2017-05-13 | 2018-05-02 | 高品質のボイド充填法のための流動性堆積及び高密度プラズマ処理工程サイクル |
PCT/US2018/030699 WO2018212999A1 (en) | 2017-05-13 | 2018-05-02 | Cyclic flowable deposition and high-density plasma treatment proceses for high quality gap fill solutions |
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