CN102758172A - 铁基合金表面镀膜方法及由该方法制得的镀膜件 - Google Patents
铁基合金表面镀膜方法及由该方法制得的镀膜件 Download PDFInfo
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- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 30
- 239000000956 alloy Substances 0.000 title claims abstract description 30
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052742 iron Inorganic materials 0.000 title abstract 3
- 238000000576 coating method Methods 0.000 title abstract 2
- 239000011159 matrix material Substances 0.000 claims abstract description 73
- 239000010935 stainless steel Substances 0.000 claims abstract description 40
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 40
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 52
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 229910052786 argon Inorganic materials 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 15
- 238000007747 plating Methods 0.000 claims description 15
- 229910000831 Steel Inorganic materials 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 239000010959 steel Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims 4
- 238000004544 sputter deposition Methods 0.000 abstract description 12
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 238000004140 cleaning Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003245 working effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
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Abstract
本发明提供一种铁基合金表面镀膜方法，包括以下步骤：提供铁基合金基体；于基体上溅射不锈钢层；于不锈钢层上溅射SiON层；于SiON层上溅射BN层。本发明还提供一种由上述方法制得的镀膜件。本发明的镀膜件具有较好高温抗氧化性能。
Description
技术领域
本发明涉及一种铁基合金表面镀膜方法及由该方法制得的镀膜件。
背景技术
铁基合金（比如模具钢）在高温下使用时，表面很容易被氧化，高温形成的不均匀氧化层不仅会降低产品的表面质量，而且铁基合金在重复使用的过程中，形成的氧化皮膜易剥落，暴露的基体在高温下将会继续被腐蚀，降低了铁基合金的使用寿命。
发明内容
有鉴于此，有必要提供一种铁基合金表面镀膜方法，使铁基合金表面具有较好的高温抗氧化性。
另外，还有必要提供一种上述镀膜方法制得的镀膜件。
一种铁基合金表面镀膜方法，包括以下步骤：
提供铁基合金基体；
于基体上溅射不锈钢层；
于不锈钢层上溅射SiON层；
于SiON层上溅射BN层。
一种镀膜件，包括铁基合金基体，该镀膜件还包形成于基体上的不锈钢层、形成于不锈钢层上的SiON层以及形成形成于SiON层上的BN层。
上述镀膜件采用不锈钢层打底，增加了整个膜层与铁基合金基体的结合力。SiON层具有很好的致密性，可以阻止氧气渗入，保护基体不被氧化，可提高铁基合金的使用寿命。BN层具有较好的润滑性，当镀膜件用于模具时，可以提高基体表面的流动性，易于脱模。
附图说明
图1为本发明较佳实施例的镀膜件的剖视示意图。
图2为本发明较佳实施例的铁基合金表面镀膜方法中所用溅射设备的示意图。
主要元件符号说明
| 镀膜件 | 10 |
| 基体 | 11 |
| 不锈钢层 | 13 |
| SiON层 | 14 |
| BN层 | 15 |
| 溅射设备 | 30 |
| 真空室 | 31 |
| 真空泵 | 32 |
| 气源通道 | 33 |
| 转架 | 35 |
| 不锈钢靶 | 36 |
| 硅靶 | 37 |
| 硼靶 | 38 |
| 蒸发电源 | 39 |
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
请结合参阅图1及图2，本发明一较佳实施方式的铁基合金表面镀膜方法包括如下步骤：
提供基体11，该基体11的材质为铁基合金，比如刃具钢、模具钢及量具钢等。
对基体11进行去污清洗。该清洗步骤可将基体11放入盛装有乙醇或丙酮溶液的超声波清洗器中进行震动清洗，以除去基体11表面的杂质和油污等，清洗完毕后烘干备用。
请参阅图2，提供一溅射设备30，溅射设备30包括一真空室31、用以对真空室31抽真空的真空泵32以及与真空室31相通的气源通道33。该真空室31内设有转架35、不锈钢靶36、硅靶37、硼靶38及用于控制溅射靶材的蒸发电源39。转架35带动基体11做圆周运行，且基体11在随转架35运行的同时也进行自转。镀膜时，溅射气体与反应气体经由气源通道33进入真空室31。以下步骤均在该溅射设备30中进行。
对基体11进行氩气等离子体清洗。该等离子体清洗过程如下：将基体11放入溅射设备30的真空室31内，将真空室31抽真空至3×10-5torr～6×10-5torr，以下步骤保持该真空度不变，然后向真空室31内通入流量为100～400sccm(标准状态毫升/分钟)的氩气(纯度为99.999%)，并施加-200～-350V的偏压于基体11，对基体11表面进行氩气等离子体清洗，清洗时间为3～20min。
在基体11上溅射一不锈钢层13。调节氩气流量为100~300sccm，调节偏压至-100~-300V，将基体11温度控制在20～200℃。采用直流磁控电源为蒸发电源，开启不锈钢靶36，调节不锈钢靶的功率为8~12kW，对基体11溅射5~20分钟，以于基体11表面形成一不锈钢层13。
在不锈钢层13上溅射一SiON层14。关闭不锈钢靶材，氩气流量维持在100~300sccm，同时向真空室31通入流量为20~300sccm的氧气，以及流量为20~300sccm的氮气。维持基体11偏压为-100~-300V，基体11温度为20～200℃。开启硅靶37，调节硅靶37的功率为8~12kW，对镀覆有不锈钢层13的基体11进行溅射10~40分钟，以在该不锈钢层13上沉积一层SiON层14。
接着，在SiON层14上溅射BN层15。关闭硅靶，停止向真空室31通入氧气。氩气流量维持在100~300sccm，氮气流量控制在20~300sccm。维持基体11偏压为-100~-300V，基体11温度为20～200℃。开启硼靶38，调节硼靶38的功率为10~13kW，在SiON层14上溅射10~60分钟，以在该SiON层14上沉积一层BN层15，由此获得以铁基合金为基材的镀膜件10。
镀膜结束后，关闭负偏压及硅靶电源，停止通入氩气和氮气，待冷却后，取出镀膜件10。
请再参阅图1，由上述铁基合金表面镀膜方法制得的镀膜件10包括基体11、形成于基体11上的不锈钢层13、形成于不锈钢层13上的SiON层14以及形成形成于SiON层14上的BN层15。
该基体11的材质为铁基合金，如刃具钢、模具钢及量具钢等。
该不锈钢层13的厚度大约为20~50nm。该SiON层14的厚度大约为80~150nm。该BN层15的厚度大约为100～200nm。
上述镀膜件10采用不锈钢层打底，增加了整个膜层与基体11的结合力。SiON层14具有很好的致密性，可以阻止氧气渗入，保护基体11不被氧化。BN层15具有较好的润滑性，当镀膜件10用于模具时，可以提高基体11表面的流动性，易于脱模。
下面通过实施例来对本发明进行具体说明。
实施例1
本实施例所使用的基体11的材质为S316型号模具钢，真空室保持真空度为3×10-5torr。
等离子体清洗：氩气流量为200sccm，基体11的偏压为-300V，等离子体清洗时间为5min。
溅镀不锈钢层13：不锈钢靶26的功率为8kW，氩气流量为150sccm，基体11的偏压为-150V，基体11温度为30℃，溅射时间为6min；该不锈钢层13的厚度为25nm。
溅镀SiON层14：硅靶37的功率为8kW，氩气流量为150sccm，氮气流量为300sccm，氧气流量为100sccm，基体11的偏压为-150V，基体11的温度为30℃，镀膜时间为15min；该SiON层14的厚度为100nm。
溅镀BN层15：硼靶38的功率为10kW，基体11的偏压为-150V，氩气流量为150sccm，氮气流量为40sccm，基体11的温度为30℃，镀膜时间为20min；该BN层15的厚度为120nm。
实施例2
本实施例所使用的基体11的材质为H11型号模具钢，真空室保持真空度为3×10-5torr。
等离子体清洗：氩气流量为300sccm，基体11的偏压为-200V，等离子体清洗时间为10min。
溅镀不锈钢层13：不锈钢靶26的功率为11kW，氩气流量为200sccm，基体11的偏压为-200V，基体11温度为100℃，溅射时间为15min；该不锈钢层13的厚度为40nm。
溅镀SiON层14：硅靶37的功率为11kW，氩气流量为200sccm，氮气流量为200sccm，氧气流量为150sccm，基体11的偏压为-200V，基体11的温度为100℃，镀膜时间为20min；该SiON层14的厚度为120nm。
溅镀BN层15：硼靶38的功率为13kW，基体11的偏压为-200V，氩气流量为150sccm，氮气流量为60sccm，基体11的温度为100℃，镀膜时间为40min；该BN层15的厚度为140nm。
实施例3
本实施例所使用的基体11的材质为P20型号模具钢，真空室保持真空度为3×10-5torr。
等离子体清洗：氩气流量为300sccm，基体11的偏压为-200V，等离子体清洗时间为10min。
溅镀不锈钢层13：不锈钢靶26的10kW，氩气流量为200sccm，基体11的偏压为-200V，基体11温度为150℃，溅射时间为20min；该不锈钢层13的厚度为50nm。
溅镀SiON层14：硅靶37的功率为10kW，氩气流量为200sccm，氮气流量为250sccm，氧气流量为100sccm，基体11的偏压为-200V，基体11的温度为150℃，镀膜时间为60min；该SiON层14的厚度为150nm。
溅镀BN层15：硼靶38的功率为11kW，基体11的偏压为-200V，氩气流量为200sccm，氮气流量为200sccm，基体11的温度为150℃，镀膜时间为60min；该BN层15的厚度为160nm。
对实施例1-3制备的镀膜件10进行高温抗氧化实验。实验条件如下：在空气气氛下，将镀膜件10样品放置在高温炉内，将高温炉内的温度升温到800℃，保温1小时后取出观察，样品表面没有出现膜层的开裂、氧化、脱落等现象，说明本发明的镀膜件10高温抗氧化性能良好。
Claims (9)
1.一种铁基合金表面镀膜方法，包括以下步骤：
提供铁基合金基体；
于基体上溅射不锈钢层；
于不锈钢层上溅射SiON层；
于SiON层上溅射BN层。
2.如权利要求1所述的铁基合金表面镀膜方法，其特征在于：溅射所述不锈钢层的步骤采用如下方式实现：采用磁控溅射法，使用不锈钢靶，不锈钢靶的功率为8～12kw，以氩气为溅射气体，氩气流量为100～300sccm，对基体施加偏压为-100～-300V，基体的温度为20～200℃，镀膜时间为5～20min。
3.如权利要求1所述的铁基合金表面镀膜方法，其特征在于：溅射所述SiON层的步骤采用如下方式实现工艺条件为：采用磁控溅射法，使用硅靶，硅靶的功率为8～12kw，以氩气为溅射气体，氩气流量为100～300sccm，以氮气和氧气为反应气体，氮气的流量为20～300sccm，氧气的流量为20～300sccm，对基体施加偏压为-100～-300V，基体的温度为20～200℃，镀膜时间为10～40min。
4.如权利要求1所述的铁基合金表面镀膜方法，其特征在于：溅射所述BN层的步骤采用如下方式实现工艺条件为：采用磁控溅射法，使用硼靶，硼靶的功率为11～13kw，以氩气为溅射气体，氩气流量为100～300sccm，以氮气为反应气体，氮气的流量为20～200sccm，对基体施加偏压为-100～-300V，基体的温度为20～200℃，镀膜时间为10～60min。
5.如权利要求1所述的铁基合金表面镀膜方法，其特征在于：该铁基合金表面镀膜方法还包括在溅射所述不锈钢层的步骤之前，对基体进行氩气等离子体清洗。
6.如权利要求1所述的铁基合金表面镀膜方法，其特征在于：该基体的材质为刃具钢、模具钢及量具钢中的一种。
7.一种镀膜件，包括铁基合金基体，其特征在于：该镀膜件还包形成于基体上的不锈钢层、形成于不锈钢层上的SiON层以及形成形成于SiON层上的BN层。
8.如权利要求7所述的镀膜件，其特征在于：该不锈钢层的厚度为20~50nm；该SiON层的厚度为80~150nm；该BN层的厚度为100～200nm。
9.如权利要求7所述的镀膜件，其特征在于：所述不锈钢层、SiON层及BN层均通过磁控溅射形成。
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| TW100114980A TW201243067A (en) | 2011-04-27 | 2011-04-28 | Process for coating on ferrousalloy and coated articles made by same |
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| CN106929800A (zh) * | 2017-04-24 | 2017-07-07 | 信利光电股份有限公司 | 一种类金刚石复合薄膜及其制备方法 |
| CN110484879A (zh) * | 2018-05-15 | 2019-11-22 | 蓝思科技（长沙）有限公司 | 金属复合涂层Logo及其制备方法与包含其的陶瓷盖板和电子设备 |
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| CN107354428B (zh) * | 2012-07-02 | 2020-10-20 | 应用材料公司 | 用于制造装置的方法和设备 |
| JP7168586B2 (ja) | 2017-05-13 | 2022-11-09 | アプライド マテリアルズ インコーポレイテッド | 高品質のボイド充填法のための流動性堆積及び高密度プラズマ処理工程サイクル |
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| US5135801A (en) * | 1988-06-13 | 1992-08-04 | Sandvik Ab | Diffusion barrier coating material |
| CN101191197A (zh) * | 2006-11-21 | 2008-06-04 | 比亚迪股份有限公司 | 一种磁控溅射离子镀方法 |
| CN101157288A (zh) * | 2007-11-13 | 2008-04-09 | 江苏科技大学 | AlN/BN超硬纳米结构多层膜及其制备方法 |
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| CN106929800A (zh) * | 2017-04-24 | 2017-07-07 | 信利光电股份有限公司 | 一种类金刚石复合薄膜及其制备方法 |
| CN110484879A (zh) * | 2018-05-15 | 2019-11-22 | 蓝思科技（长沙）有限公司 | 金属复合涂层Logo及其制备方法与包含其的陶瓷盖板和电子设备 |
| CN110484879B (zh) * | 2018-05-15 | 2021-09-21 | 蓝思科技（长沙）有限公司 | 金属复合涂层Logo及其制备方法与包含其的陶瓷盖板和电子设备 |
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