JP7453013B2 - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
- Publication number
- JP7453013B2 JP7453013B2 JP2020023244A JP2020023244A JP7453013B2 JP 7453013 B2 JP7453013 B2 JP 7453013B2 JP 2020023244 A JP2020023244 A JP 2020023244A JP 2020023244 A JP2020023244 A JP 2020023244A JP 7453013 B2 JP7453013 B2 JP 7453013B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- modified layer
- chamfered portion
- region
- back surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003672 processing method Methods 0.000 title description 6
- 230000002093 peripheral effect Effects 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 19
- 238000000926 separation method Methods 0.000 claims description 17
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000002390 adhesive tape Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 210000000078 claw Anatomy 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Description
波長 :1342nm
繰り返し周波数 :60kHz
平均出力 :1.6W
チャックテーブル回転数 :0.5回/秒
10A:デバイス領域
10a:表面
10B:外周余剰領域
10b:裏面
10c:面取り部
12:デバイス
14:分割予定ライン
20:粘着テープ
30:レーザー加工装置
32:チャックテーブル
34:レーザー光線照射手段
34a:集光器
40:研削装置
42:チャックテーブル
44:研削手段
44c:研削ホイール
44d:研削砥石
100、110:改質層
LB:レーザー光線
M:分離レバー
Claims (1)
- 複数のデバイスが表面に形成されたデバイス領域と該デバイス領域を囲繞し面取り部が形成された外周余剰領域とを含むウエーハの加工方法であって、
ウエーハの表面に保護部材を配設する保護部材配設工程と、
面取り部が形成された外周余剰領域の内部にウエーハに対して透過性を有する波長のレーザー光線の集光点を位置付けて照射して改質層を環状に形成する改質層形成工程と、
環状に形成された改質層を起点として面取り部が形成された外周余剰領域をウエーハから分離する分離工程と、
該分離工程によって面取り部が除去されたウエーハの裏面を研削して薄化する研削工程と、
を含み、
該改質層形成工程において、該改質層は、ウエーハの表面から裏面に向かって円錐台形に形成されることに加え、逆円錐台形も形成されるウエーハの加工方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020023244A JP7453013B2 (ja) | 2020-02-14 | 2020-02-14 | ウエーハの加工方法 |
US17/163,836 US11430696B2 (en) | 2020-02-14 | 2021-02-01 | Wafer processing method |
CN202110170685.4A CN113270313A (zh) | 2020-02-14 | 2021-02-08 | 晶片的加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020023244A JP7453013B2 (ja) | 2020-02-14 | 2020-02-14 | ウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021129037A JP2021129037A (ja) | 2021-09-02 |
JP7453013B2 true JP7453013B2 (ja) | 2024-03-19 |
Family
ID=77228119
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020023244A Active JP7453013B2 (ja) | 2020-02-14 | 2020-02-14 | ウエーハの加工方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11430696B2 (ja) |
JP (1) | JP7453013B2 (ja) |
CN (1) | CN113270313A (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004111606A (ja) | 2002-09-18 | 2004-04-08 | Tokyo Seimitsu Co Ltd | ウェーハの加工方法 |
JP2006108532A (ja) | 2004-10-08 | 2006-04-20 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
CN104078345A (zh) | 2014-06-13 | 2014-10-01 | 北京工业大学 | 一种超薄晶圆减薄方法 |
JP2017071074A (ja) | 2015-10-05 | 2017-04-13 | 国立大学法人埼玉大学 | 内部加工層形成単結晶基板の製造方法、および、単結晶基板の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004111428A (ja) * | 2002-09-13 | 2004-04-08 | Tokyo Seimitsu Co Ltd | チップ製造方法 |
JP5995563B2 (ja) * | 2012-07-11 | 2016-09-21 | 株式会社ディスコ | 光デバイスの加工方法 |
JP2016115800A (ja) * | 2014-12-15 | 2016-06-23 | 株式会社ディスコ | ウエーハの加工方法 |
JP7027215B2 (ja) * | 2018-03-27 | 2022-03-01 | 株式会社ディスコ | ウエーハの生成方法およびウエーハの生成装置 |
JP7195758B2 (ja) * | 2018-04-19 | 2022-12-26 | 株式会社ディスコ | Sawデバイスの製造方法 |
JP7217623B2 (ja) * | 2018-12-07 | 2023-02-03 | 株式会社ディスコ | デバイスチップの製造方法 |
-
2020
- 2020-02-14 JP JP2020023244A patent/JP7453013B2/ja active Active
-
2021
- 2021-02-01 US US17/163,836 patent/US11430696B2/en active Active
- 2021-02-08 CN CN202110170685.4A patent/CN113270313A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004111606A (ja) | 2002-09-18 | 2004-04-08 | Tokyo Seimitsu Co Ltd | ウェーハの加工方法 |
JP2006108532A (ja) | 2004-10-08 | 2006-04-20 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
CN104078345A (zh) | 2014-06-13 | 2014-10-01 | 北京工业大学 | 一种超薄晶圆减薄方法 |
JP2017071074A (ja) | 2015-10-05 | 2017-04-13 | 国立大学法人埼玉大学 | 内部加工層形成単結晶基板の製造方法、および、単結晶基板の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US11430696B2 (en) | 2022-08-30 |
US20210257256A1 (en) | 2021-08-19 |
CN113270313A (zh) | 2021-08-17 |
JP2021129037A (ja) | 2021-09-02 |
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