CN104078345A - 一种超薄晶圆减薄方法 - Google Patents
一种超薄晶圆减薄方法 Download PDFInfo
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- CN104078345A CN104078345A CN201410265367.6A CN201410265367A CN104078345A CN 104078345 A CN104078345 A CN 104078345A CN 201410265367 A CN201410265367 A CN 201410265367A CN 104078345 A CN104078345 A CN 104078345A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
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Priority Applications (1)
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CN201410265367.6A CN104078345B (zh) | 2014-06-13 | 2014-06-13 | 一种超薄晶圆减薄方法 |
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CN201410265367.6A CN104078345B (zh) | 2014-06-13 | 2014-06-13 | 一种超薄晶圆减薄方法 |
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CN104078345A true CN104078345A (zh) | 2014-10-01 |
CN104078345B CN104078345B (zh) | 2016-08-24 |
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CN201410265367.6A Active CN104078345B (zh) | 2014-06-13 | 2014-06-13 | 一种超薄晶圆减薄方法 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104409581A (zh) * | 2014-11-19 | 2015-03-11 | 迪源光电股份有限公司 | 一种改进的晶圆减薄加工方法 |
CN105108608A (zh) * | 2015-08-27 | 2015-12-02 | 哈尔滨工业大学 | 硬脆材料超光滑表面自适应加工方法 |
CN106041660A (zh) * | 2016-06-09 | 2016-10-26 | 北京工业大学 | 一种硅晶圆多步变参数粗磨削方法 |
CN107749391A (zh) * | 2017-09-26 | 2018-03-02 | 合肥新汇成微电子有限公司 | 一种半导体晶圆高效精度减薄方法 |
CN108214182A (zh) * | 2016-12-21 | 2018-06-29 | 蓝思科技(长沙)有限公司 | 一种蓝宝石晶块仿角加工方法 |
CN109664172A (zh) * | 2018-12-27 | 2019-04-23 | 厦门芯光润泽科技有限公司 | 碳化硅晶圆的减薄方法 |
CN113510609A (zh) * | 2021-07-12 | 2021-10-19 | 长鑫存储技术有限公司 | 晶圆以及晶圆的处理方法 |
JP7453013B2 (ja) | 2020-02-14 | 2024-03-19 | 株式会社ディスコ | ウエーハの加工方法 |
Citations (5)
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CN101091238A (zh) * | 2004-12-28 | 2007-12-19 | 信越半导体股份有限公司 | 硅晶片的研磨方法及制造方法及圆盘状工作件的研磨装置及硅晶片 |
US20100059862A1 (en) * | 2008-09-08 | 2010-03-11 | Seddon Michael J | Thinned semiconductor wafer and method of thinning a semiconductor wafer |
CN102214555A (zh) * | 2010-04-09 | 2011-10-12 | 中国科学院微电子研究所 | 一种对蓝宝石晶片进行减薄的方法 |
US8476165B2 (en) * | 2009-04-01 | 2013-07-02 | Tokyo Electron Limited | Method for thinning a bonding wafer |
CN103606517A (zh) * | 2013-09-18 | 2014-02-26 | 中国东方电气集团有限公司 | 一种硅片减薄方法 |
-
2014
- 2014-06-13 CN CN201410265367.6A patent/CN104078345B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101091238A (zh) * | 2004-12-28 | 2007-12-19 | 信越半导体股份有限公司 | 硅晶片的研磨方法及制造方法及圆盘状工作件的研磨装置及硅晶片 |
US20100059862A1 (en) * | 2008-09-08 | 2010-03-11 | Seddon Michael J | Thinned semiconductor wafer and method of thinning a semiconductor wafer |
US8476165B2 (en) * | 2009-04-01 | 2013-07-02 | Tokyo Electron Limited | Method for thinning a bonding wafer |
CN102214555A (zh) * | 2010-04-09 | 2011-10-12 | 中国科学院微电子研究所 | 一种对蓝宝石晶片进行减薄的方法 |
CN103606517A (zh) * | 2013-09-18 | 2014-02-26 | 中国东方电气集团有限公司 | 一种硅片减薄方法 |
Non-Patent Citations (2)
Title |
---|
康仁科,郭东明,霍风伟,金洙吉: "大尺寸硅片背面磨削技术的应用与发展", 《半导体技术》 * |
王仲康,杨生荣: "芯片背面磨削减薄技术研究", 《电子工业专用设备》 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104409581A (zh) * | 2014-11-19 | 2015-03-11 | 迪源光电股份有限公司 | 一种改进的晶圆减薄加工方法 |
CN105108608A (zh) * | 2015-08-27 | 2015-12-02 | 哈尔滨工业大学 | 硬脆材料超光滑表面自适应加工方法 |
CN106041660A (zh) * | 2016-06-09 | 2016-10-26 | 北京工业大学 | 一种硅晶圆多步变参数粗磨削方法 |
CN108214182A (zh) * | 2016-12-21 | 2018-06-29 | 蓝思科技(长沙)有限公司 | 一种蓝宝石晶块仿角加工方法 |
CN107749391A (zh) * | 2017-09-26 | 2018-03-02 | 合肥新汇成微电子有限公司 | 一种半导体晶圆高效精度减薄方法 |
CN109664172A (zh) * | 2018-12-27 | 2019-04-23 | 厦门芯光润泽科技有限公司 | 碳化硅晶圆的减薄方法 |
JP7453013B2 (ja) | 2020-02-14 | 2024-03-19 | 株式会社ディスコ | ウエーハの加工方法 |
CN113510609A (zh) * | 2021-07-12 | 2021-10-19 | 长鑫存储技术有限公司 | 晶圆以及晶圆的处理方法 |
CN113510609B (zh) * | 2021-07-12 | 2023-09-08 | 长鑫存储技术有限公司 | 晶圆以及晶圆的处理方法 |
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Publication number | Publication date |
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CN104078345B (zh) | 2016-08-24 |
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Effective date of registration: 20201211 Address after: 8319 Yanshan Road, Bengbu City, Anhui Province Patentee after: Bengbu Lichao Information Technology Co.,Ltd. Address before: 100124 No. 100 Chaoyang District Ping Tian Park, Beijing Patentee before: Beijing University of Technology |
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Effective date of registration: 20211122 Address after: 300300 No. 2002, building 4, block B, No. 6, Huafeng Road, Huaming high tech Industrial Zone, Dongli District, Tianjin Patentee after: Power intellectual property (Tianjin) Co.,Ltd. Address before: 8319 Yanshan Road, Bengbu City, Anhui Province Patentee before: Bengbu Lichao Information Technology Co.,Ltd. |
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Effective date of registration: 20211124 Address after: 300304 building 4, Huiguyuan, Dongli District, Tianjin Patentee after: TIANJIN INSTITUTE OF ADVANCED EQUIPMENT, TSINGHUA University Address before: 300300 No. 2002, building 4, block B, No. 6, Huafeng Road, Huaming high tech Industrial Zone, Dongli District, Tianjin Patentee before: Power intellectual property (Tianjin) Co.,Ltd. |
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