JP7434592B2 - 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 - Google Patents

感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 Download PDF

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JP7434592B2
JP7434592B2 JP2022553837A JP2022553837A JP7434592B2 JP 7434592 B2 JP7434592 B2 JP 7434592B2 JP 2022553837 A JP2022553837 A JP 2022553837A JP 2022553837 A JP2022553837 A JP 2022553837A JP 7434592 B2 JP7434592 B2 JP 7434592B2
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JPWO2022070997A1 (https=
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佑太 奥秋
明弘 金子
雅史 小島
研由 後藤
啓太 加藤
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Fujifilm Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0384—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the main chain of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2022553837A 2020-09-29 2021-09-17 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 Active JP7434592B2 (ja)

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JP2020163058 2020-09-29
JP2020163058 2020-09-29
PCT/JP2021/034387 WO2022070997A1 (ja) 2020-09-29 2021-09-17 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法

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JP7434592B2 true JP7434592B2 (ja) 2024-02-20

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US (1) US20230259029A1 (https=)
JP (1) JP7434592B2 (https=)
KR (1) KR102933493B1 (https=)
TW (1) TWI911291B (https=)
WO (1) WO2022070997A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022130869A1 (https=) * 2020-12-17 2022-06-23
JP2023062898A (ja) * 2021-10-22 2023-05-09 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物及び酸拡散制御剤
JP2025090419A (ja) * 2023-12-05 2025-06-17 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物、酸発生剤、及び酸拡散制御剤

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003508596A (ja) 1999-09-07 2003-03-04 ドンジン セミケム カンパニー リミテッド 化学増幅レジスト用ポリマーおよびこれを利用したレジスト組成物
JP2007206638A (ja) 2006-02-06 2007-08-16 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2013235115A (ja) 2012-05-08 2013-11-21 Tokyo Ohka Kogyo Co Ltd レジスト組成物、レジストパターン形成方法、化合物
JP2014085412A (ja) 2012-10-19 2014-05-12 Tokyo Ohka Kogyo Co Ltd レジスト組成物及びレジストパターン形成方法
JP2014149409A (ja) 2013-01-31 2014-08-21 Fujifilm Corp パターン形成方法、それに用いられる化合物、感活性光線性又は感放射線性樹脂組成物、及び、レジスト膜、電子デバイスの製造方法、並びに、電子デバイス
JP2017019911A (ja) 2015-07-09 2017-01-26 信越化学工業株式会社 重合性モノマー、高分子化合物、ポジ型レジスト材料、及びパターン形成方法
JP2019074733A (ja) 2017-10-16 2019-05-16 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
WO2020158313A1 (ja) 2019-01-28 2020-08-06 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
JP6743158B2 (ja) 2016-09-26 2020-08-19 富士フイルム株式会社 レジスト組成物、パターン形成方法及び電子デバイスの製造方法
JP2020173438A (ja) 2019-04-10 2020-10-22 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法

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JPH08202039A (ja) * 1995-01-30 1996-08-09 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
JP3173368B2 (ja) * 1995-04-12 2001-06-04 信越化学工業株式会社 高分子化合物及び化学増幅ポジ型レジスト材料
JP3541525B2 (ja) * 1995-09-20 2004-07-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP3345869B2 (ja) * 1995-12-01 2002-11-18 ジェイエスアール株式会社 感放射線性組成物
KR100190012B1 (ko) * 1996-01-12 1999-06-01 윤종용 화학 증폭형 레지스트용 베이스 수지의 제조 방법
JP3796559B2 (ja) * 1997-10-08 2006-07-12 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR100252061B1 (ko) * 1998-04-20 2000-06-01 윤종용 포토레지스트용 중합체, 이를 포함하는 포토레지스트 조성물 및이의 제조방법
JP5865199B2 (ja) * 2012-07-09 2016-02-17 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び、フォトマスクの製造方法

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JP2003508596A (ja) 1999-09-07 2003-03-04 ドンジン セミケム カンパニー リミテッド 化学増幅レジスト用ポリマーおよびこれを利用したレジスト組成物
JP2007206638A (ja) 2006-02-06 2007-08-16 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2013235115A (ja) 2012-05-08 2013-11-21 Tokyo Ohka Kogyo Co Ltd レジスト組成物、レジストパターン形成方法、化合物
JP2014085412A (ja) 2012-10-19 2014-05-12 Tokyo Ohka Kogyo Co Ltd レジスト組成物及びレジストパターン形成方法
JP2014149409A (ja) 2013-01-31 2014-08-21 Fujifilm Corp パターン形成方法、それに用いられる化合物、感活性光線性又は感放射線性樹脂組成物、及び、レジスト膜、電子デバイスの製造方法、並びに、電子デバイス
JP2017019911A (ja) 2015-07-09 2017-01-26 信越化学工業株式会社 重合性モノマー、高分子化合物、ポジ型レジスト材料、及びパターン形成方法
JP6743158B2 (ja) 2016-09-26 2020-08-19 富士フイルム株式会社 レジスト組成物、パターン形成方法及び電子デバイスの製造方法
JP2019074733A (ja) 2017-10-16 2019-05-16 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
WO2020158313A1 (ja) 2019-01-28 2020-08-06 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
JP2020173438A (ja) 2019-04-10 2020-10-22 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法

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WO2022070997A1 (ja) 2022-04-07
KR20230052296A (ko) 2023-04-19
TWI911291B (zh) 2026-01-11
TW202225835A (zh) 2022-07-01
KR102933493B1 (ko) 2026-03-04
US20230259029A1 (en) 2023-08-17
JPWO2022070997A1 (https=) 2022-04-07

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