TWI911291B - 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件的製造方法 - Google Patents

感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件的製造方法

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Publication number
TWI911291B
TWI911291B TW110135925A TW110135925A TWI911291B TW I911291 B TWI911291 B TW I911291B TW 110135925 A TW110135925 A TW 110135925A TW 110135925 A TW110135925 A TW 110135925A TW I911291 B TWI911291 B TW I911291B
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TW
Taiwan
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acid
groups
repeating unit
represented
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TW110135925A
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English (en)
Chinese (zh)
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TW202225835A (zh
Inventor
奥秋佑太
金子明弘
小島雅史
後藤研由
加藤啓太
Original Assignee
日商富士軟片股份有限公司
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Publication of TW202225835A publication Critical patent/TW202225835A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0384—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the main chain of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW110135925A 2020-09-29 2021-09-28 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件的製造方法 TWI911291B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020163058 2020-09-29
JP2020-163058 2020-09-29

Publications (2)

Publication Number Publication Date
TW202225835A TW202225835A (zh) 2022-07-01
TWI911291B true TWI911291B (zh) 2026-01-11

Family

ID=80951587

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110135925A TWI911291B (zh) 2020-09-29 2021-09-28 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件的製造方法

Country Status (5)

Country Link
US (1) US20230259029A1 (https=)
JP (1) JP7434592B2 (https=)
KR (1) KR102933493B1 (https=)
TW (1) TWI911291B (https=)
WO (1) WO2022070997A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022130869A1 (https=) * 2020-12-17 2022-06-23
JP2023062898A (ja) * 2021-10-22 2023-05-09 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物及び酸拡散制御剤
JP2025090419A (ja) * 2023-12-05 2025-06-17 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物、酸発生剤、及び酸拡散制御剤

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW554243B (en) * 1999-09-07 2003-09-21 Dongjin Semichem Co Ltd Polymer for chemically amplified resist and a resist composition using the same
TW201403227A (zh) * 2012-07-09 2014-01-16 富士軟片股份有限公司 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、具有感光化射線性或感放射線性膜的空白遮罩、圖案形成方法及光罩
TW201819433A (zh) * 2016-09-26 2018-06-01 日商富士軟片股份有限公司 抗蝕劑組成物、圖案形成方法及電子元件的製造方法

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JPH06130667A (ja) * 1992-10-19 1994-05-13 Japan Synthetic Rubber Co Ltd 感放射線性組成物
JPH08202039A (ja) * 1995-01-30 1996-08-09 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
JP3173368B2 (ja) * 1995-04-12 2001-06-04 信越化学工業株式会社 高分子化合物及び化学増幅ポジ型レジスト材料
JP3541525B2 (ja) * 1995-09-20 2004-07-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP3345869B2 (ja) * 1995-12-01 2002-11-18 ジェイエスアール株式会社 感放射線性組成物
KR100190012B1 (ko) * 1996-01-12 1999-06-01 윤종용 화학 증폭형 레지스트용 베이스 수지의 제조 방법
JP3796559B2 (ja) * 1997-10-08 2006-07-12 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR100252061B1 (ko) * 1998-04-20 2000-06-01 윤종용 포토레지스트용 중합체, 이를 포함하는 포토레지스트 조성물 및이의 제조방법
JP2007206638A (ja) 2006-02-06 2007-08-16 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP6002430B2 (ja) * 2012-05-08 2016-10-05 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物
JP6076029B2 (ja) 2012-10-19 2017-02-08 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP6031369B2 (ja) * 2013-01-31 2016-11-24 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
JP6370265B2 (ja) 2015-07-09 2018-08-08 信越化学工業株式会社 重合性モノマー、高分子化合物、ポジ型レジスト材料、及びパターン形成方法
JP7210959B2 (ja) 2017-10-16 2023-01-24 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
CN113168098B (zh) 2019-01-28 2024-03-29 富士胶片株式会社 感光化射线性或感辐射线性树脂组合物、抗蚀剂膜、图案形成方法及电子器件的制造方法
JP7478573B2 (ja) 2019-04-10 2024-05-07 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW554243B (en) * 1999-09-07 2003-09-21 Dongjin Semichem Co Ltd Polymer for chemically amplified resist and a resist composition using the same
TW201403227A (zh) * 2012-07-09 2014-01-16 富士軟片股份有限公司 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、具有感光化射線性或感放射線性膜的空白遮罩、圖案形成方法及光罩
TW201819433A (zh) * 2016-09-26 2018-06-01 日商富士軟片股份有限公司 抗蝕劑組成物、圖案形成方法及電子元件的製造方法

Also Published As

Publication number Publication date
WO2022070997A1 (ja) 2022-04-07
KR20230052296A (ko) 2023-04-19
TW202225835A (zh) 2022-07-01
KR102933493B1 (ko) 2026-03-04
US20230259029A1 (en) 2023-08-17
JP7434592B2 (ja) 2024-02-20
JPWO2022070997A1 (https=) 2022-04-07

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