JP7430568B2 - 低密度ケイ素酸化物の溶融結合および脱着の方法および構造 - Google Patents
低密度ケイ素酸化物の溶融結合および脱着の方法および構造 Download PDFInfo
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- JP7430568B2 JP7430568B2 JP2020076451A JP2020076451A JP7430568B2 JP 7430568 B2 JP7430568 B2 JP 7430568B2 JP 2020076451 A JP2020076451 A JP 2020076451A JP 2020076451 A JP2020076451 A JP 2020076451A JP 7430568 B2 JP7430568 B2 JP 7430568B2
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- 238000000034 method Methods 0.000 title claims description 90
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 56
- 229910052814 silicon oxide Inorganic materials 0.000 title claims description 56
- 238000003795 desorption Methods 0.000 title description 14
- 239000000758 substrate Substances 0.000 claims description 188
- 239000010410 layer Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 26
- 230000004927 fusion Effects 0.000 claims description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 239000002344 surface layer Substances 0.000 claims description 15
- 229910002808 Si–O–Si Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 238000009966 trimming Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000004026 adhesive bonding Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
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- 230000005496 eutectics Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000010128 melt processing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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Description
105 上部基板
110 下部基板
112 前側装置領域
114 後ろ側装置領域
115 追加の後ろ側領域
205 上部基板
206 上部基板酸化物表面
210 下部基板
211 下部基板酸化物表面
300 マルチ基板構造
305 上部基板
310 下部基板
314 結合ケイ素酸化物層
316 前側装置領域
318 基板本体
320 後ろ側装置領域
350 上部基板
Claims (15)
- 第1の基板と第2の基板を処理する方法であって、
前記第1の基板の第1の側を処理するステップと、
前記第1の基板の前記第1の側または前記第2の基板の第1の側の少なくとも一つの上に、酸化物表面層を提供するステップと、
前記第1の基板の前記第1の側が前記第2の基板の前記第1の側と面し、前記第1の基板の第2の側が露出されるように、前記第1の基板を反転し、前記第1の基板の前記第1の側を前記第2の基板の前記第1の側に溶融結合するステップと、
前記溶融結合の後に、前記第1の基板の前記第2の側を処理するステップと、
前記第1の基板の前記第2の側を処理した後、酸化物エッチャントの使用を介して、前記第1の基板と前記第2の基板を脱着するステップと、
を有し、
前記酸化物表面層は、密度が2g/cm 3 以下のケイ素酸化物を有する、方法。 - 前記酸化物エッチャントは、フッ化水素酸を有する、請求項1に記載の方法。
- 前記酸化物エッチャントは、希釈フッ化水素酸を有する、請求項2に記載の方法。
- 前記第1の基板の前記第1の側は、第1の酸化物表面層を有し、前記第2の基板の前記第1の側は、第2の酸化物表面層を有する、請求項1に記載の方法。
- 前記溶融結合するステップは、前記第1の基板の前記第1の側と前記第2の基板の前記第1の側の間に、Si-O-Si結合を形成する、請求項1に記載の方法。
- 前記酸化物エッチャントは、湿式酸化物エッチャントを有する、請求項5に記載の方法。
- 前記酸化物エッチャントは、フッ化水素酸を有する、請求項6に記載の方法。
- 前記酸化物エッチャントは、湿式酸化物エッチャントを有する、請求項1に記載の方法。
- 前記第1の基板の前記第2の側を処理するステップは、前記第1の基板を薄肉化する、請求項1に記載の方法。
- 前記第1の基板の前記第2の側を処理するステップは、端部のトリム、研磨、および/または化学的機械的平坦化の少なくとも一つを含む、請求項1に記載の方法。
- 前記第1の基板の前記第1の側は、前側であり、前記第2の側は、後ろ側であり、
前記酸化物表面層は、密度が2g/cm3以下のケイ素酸化物であり、前記酸化物表面層は、10μm以下の厚さを有し、
前記ケイ素酸化物は、前記第1の基板の前記前側および前記第2の基板の前記第1の側の両側に提供される、請求項1に記載の方法。 - 基板を処理する方法であって、
前側および後ろ側を有する第1の基板を提供するステップであって、前記前側は、1または2以上の半導体処理層を有する、ステップと、
前記第1の基板に結合される一つの側を有する第2の基板を提供するステップと、
前記第1の基板または前記第2の基板の少なくとも一つに結合層を提供するステップであって、前記結合層は、ケイ素および酸素を含み密度が2g/cm3以下の材料で形成される、ステップと、
前記結合層を用いて、前記第1の基板の前記前側を前記第2の基板の前記一つの側に溶融結合するステップと、
前記第1の基板の前記後ろ側を処理するステップと、
前記第1の基板の前記前側を、前記第2の基板の前記一つの側から脱着するステップと、
を有する、方法。 - 前記結合層は、密度が2g/cm3以下のケイ素酸化物であり、厚さは、10μm以下であり、前記第2の基板の前記一つの側および前記第1の基板の前記前側の各々に提供される、請求項12に記載の方法。
- 前記第1の基板の前記後ろ側を処理するステップは、前記第1の基板を薄肉化する、請求項13に記載の方法。
- さらに、前記結合層を提供するステップの後であって、前記溶融結合するステップの前に、前記第1の基板を反転するステップを有し、
前記第1の基板の前記後ろ側を処理するステップは、端部のトリム、研磨、および/または化学的機械的平坦化の少なくとも一つを有する、請求項13に記載の方法。
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US16/573,775 US11315789B2 (en) | 2019-04-24 | 2019-09-17 | Method and structure for low density silicon oxide for fusion bonding and debonding |
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