JP7417636B2 - 薬液処理装置 - Google Patents
薬液処理装置 Download PDFInfo
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- JP7417636B2 JP7417636B2 JP2021570618A JP2021570618A JP7417636B2 JP 7417636 B2 JP7417636 B2 JP 7417636B2 JP 2021570618 A JP2021570618 A JP 2021570618A JP 2021570618 A JP2021570618 A JP 2021570618A JP 7417636 B2 JP7417636 B2 JP 7417636B2
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- 239000000758 substrate Substances 0.000 claims description 167
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- 238000003860 storage Methods 0.000 claims description 23
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/428—Stripping or agents therefor using ultrasonic means only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Robotics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
基板を薬液に浸漬することによってレジスト除去処理する処理槽と、
前記基板を縦置きで保持する複数の保持部と、
前記保持部を個別に上下に駆動する上下駆動部と、
前記基板を係脱自在にチャックするチャック部とを備え、
前記上下駆動部が、前記基板を前記薬液に浸漬した浸漬位置と、前記基板を前記薬液から引き上げた非浸漬位置との間で前記保持部を個別に上下動させることにより、前記保持部に保持された前記基板が、枚葉式でレジスト除去処理されることを特徴とする。
図1から図6を参照しながら、第1実施形態に係る薬液処理装置1を説明する。図1は、第1実施形態に係る薬液処理装置1を説明する平面図である。図2は、図1に示した薬液処理装置1における膨潤処理システム3を説明する模式図である。図3は、図1に示した薬液処理装置1におけるレジスト除去処理を説明する模式図である。図4は、図1に示した薬液処理装置1における上下駆動部20を説明する模式的正面図である。図5は、図4に示した上下駆動部20の模式的側面図である。図6は、図1に示した薬液処理装置1におけるチャック部55を説明する模式的正面図である。図7は、図6に示したチャック部55の模式的側面図である。図8は、図1に示した薬液処理装置1における膨潤処理槽10を説明する平面図である。
図9を参照しながら、第2実施形態に係る薬液処理装置1を説明する。図9は、第2実施形態に係る薬液処理装置1における膨潤処理システム3を説明する平面図である。第2実施形態に係る薬液処理装置1の特徴部分を除く他の構成は、第1実施形態に係る薬液処理装置1と同じであるので、第2実施形態に係る薬液処理装置1の特徴部分を中心に説明する。
図10および図11を参照しながら、第3実施形態に係る薬液処理装置1を説明する。図10は、第3実施形態に係る薬液処理装置1を説明する平面図である。図11は、図10に示した薬液処理装置1における膨潤処理槽10を説明する平面図である。第3実施形態に係る薬液処理装置1の特徴部分を除く他の構成は、第1実施形態に係る薬液処理装置1と同じであるので、第3実施形態に係る薬液処理装置1の特徴部分を中心に説明する。
図12を参照しながら、第4実施形態に係る薬液処理装置1を説明する。図12は、第4実施形態に係る薬液処理装置1における膨潤処理槽10を説明する平面図である。第4実施形態に係る薬液処理装置1の特徴部分を除く他の構成は、第3実施形態に係る薬液処理装置1と同じであるので、第4実施形態に係る薬液処理装置1の特徴部分を中心に説明する。
基板4を薬液6に浸漬することによってレジスト除去処理する処理槽10aと、
前記基板4を縦置きで保持する複数の保持部22と、
前記保持部22を個別に上下に駆動する上下駆動部20と、
前記基板4を係脱自在にチャックするチャック部53とを備え、
前記上下駆動部20が、前記基板4を前記薬液6に浸漬した浸漬位置と、前記基板4を前記薬液6から引き上げた非浸漬位置との間で前記保持部22を個別に上下動させることにより、前記保持部22に保持された前記基板4が、枚葉式でレジスト除去処理されることを特徴とする。
前記処理槽10aの底部には、超音波発生器17が配設されている。
前記処理槽10aの上部には、前記薬液6を前記基板4に向けて下方に噴出するノズル14が配設されている。
前記処理槽10aは、前記処理槽10aを構成する連通側壁11の底部に形成された連通口15を介して、隣接する貯留槽10bに連通している。
前記貯留槽10bに隣接して排出槽10cが配設され、前記排出槽10cは、前記貯留槽10bからオーバーフローした前記薬液6を収容し、前記ノズル14と前記排出槽10cとの間には、前記薬液6を循環させる循環経路40が形成されている。
前記循環経路40には、前記薬液6に含まれるスラッジの回収対象サイズを段階的に小さくしたフィルタリングシステム31,48,49が設けられている。
前記貯留槽10bにおいて、前記連通口15との反対側の底部には、滞留防止部16が形成されている。
前記上下駆動部20および前記チャック部55の各動作を制御する制御部8を備え、
前記制御部8は、前記非浸漬位置の前記保持部22に対して或る前記基板4を載置するステップと、前記或る基板4が載置された前記保持部22を前記浸漬位置に下動するステップと、前記浸漬位置を所定時間保つステップと、前記或る基板4が載置された前記保持部22を前記非浸漬位置に上動するステップと、前記非浸漬位置にある前記或る基板4を前記チャック部55でチャックして前記保持部22から取り除くステップと、前記非浸漬位置にある前記保持部22に対して前記或る基板とは異なる別の前記基板4を載置するステップとを有するレジスト除去処理を、前記基板4毎に個別に制御する。
前記処理槽10aに対して、前記上下駆動部20が千鳥配置で設けられている。
前記処理槽10aが平面視で扇型形状をしており、前記上下駆動部20が前記処理槽10aの外円弧部に沿って設けられている。
2…キャリア
3…膨潤処理システム
4…基板
5…洗浄処理槽
6…剥離液(薬液)
7…乾燥処理槽
8…制御部
9…多関節ロボット
10…膨潤処理槽
10a…処理槽
10b…貯留槽
10c…排出槽
11…連通側壁
12…オーバーフロー側壁
14…ノズル
15…連通口
16…滞留防止部
17…超音波発生器
20…基板上下動アクチュエータ(上下駆動部)
21…上下動アーム
22…保持部
23…基板受け
25…上下動アクチュエータ
30…スラッジ回収タンク(スラッジ回収部)
31…メッシュフィルター(フィルタリングシステム)
32…粗メッシュかご
33…中間メッシュかご
34…細メッシュかご
36…フィルター取り出し部
37…排気部
40…循環経路
41…配管
42…配管
43…配管
44…配管
45…配管
46…バルブ
47…循環ポンプ
48…リキッドサイクロン(フィルタリングシステム)
49…ケミカルフィルター(フィルタリングシステム)
51…基台
52…多関節アーム
53…係止部
54…爪部
55…チャック部
56…収容部
57…回動部
59…支柱
Claims (8)
- 基板を薬液に浸漬することによってレジスト除去処理する処理槽と、
前記基板を縦置きで保持する複数の保持部と、
前記保持部を個別に上下に駆動する上下駆動部と、
前記基板を係脱自在にチャックするチャック部とを備え、
前記上下駆動部が、前記基板を前記薬液に浸漬した浸漬位置と、前記基板を前記薬液から引き上げた非浸漬位置との間で前記保持部を個別に上下動させることにより、前記保持部に保持された前記基板が、枚葉式でレジスト除去処理され、
前記処理槽の上部には、前記薬液を前記基板に向けて下方に噴出するノズルが配設され、
前記処理槽は、前記処理槽を構成する連通側壁の底部に形成された連通口を介して、隣接する貯留槽に連通していることを特徴とする、薬液処理装置。 - 前記処理槽の底部には、超音波発生器が配設されていることを特徴とする、請求項1に記載の薬液処理装置。
- 前記貯留槽に隣接して排出槽が配設され、前記排出槽は、前記貯留槽からオーバーフローした前記薬液を収容し、前記ノズルと前記排出槽との間には、前記薬液を循環させる循環経路が形成されていることを特徴とする、請求項1又は2に記載の薬液処理装置。
- 前記循環経路には、前記薬液に含まれるスラッジの回収対象サイズを段階的に小さくしたフィルタリングシステムが設けられていることを特徴とする、請求項3に記載の薬液処理装置。
- 前記貯留槽において、前記連通口との反対側の底部には、滞留防止部が形成されていることを特徴とする、請求項1から請求項4のいずれか1項に記載の薬液処理装置。
- 前記上下駆動部および前記チャック部の各動作を制御する制御部を備え、
前記制御部は、前記非浸漬位置の前記保持部に対して或る前記基板を載置するステップと、前記或る基板が載置された前記保持部を前記浸漬位置に下動するステップと、前記浸漬位置を所定時間保つステップと、前記或る基板が載置された前記保持部を前記非浸漬位置に上動するステップと、前記非浸漬位置にある前記或る基板を前記チャック部でチャックして前記保持部から取り除くステップと、前記非浸漬位置にある前記保持部に対して前記或る基板とは異なる別の前記基板を載置するステップとを有するレジスト除去処理を、前記基板毎に個別に制御することを特徴とする、請求項1から請求項5のいずれか1項に記載の薬液処理装置。 - 前記処理槽に対して、前記上下駆動部が千鳥配置で設けられていることを特徴とする、請求項1から請求項6のいずれか1項に記載の薬液処理装置。
- 前記処理槽が平面視で扇型形状をしており、前記上下駆動部が前記処理槽の外円弧部に沿って設けられていることを特徴とする、請求項1から請求項7のいずれか1項に記載の薬液処理装置。
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JP2000098313A (ja) | 1998-09-17 | 2000-04-07 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JP2005079460A (ja) | 2003-09-02 | 2005-03-24 | Murata Mfg Co Ltd | リフトオフ用剥離装置 |
JP2013138051A (ja) | 2011-12-28 | 2013-07-11 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
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JPH03246940A (ja) * | 1990-02-23 | 1991-11-05 | Hitachi Ltd | 洗浄乾燥処理装置 |
JPH07176507A (ja) * | 1993-12-20 | 1995-07-14 | Hitachi Ltd | ウエット処理装置およびウエット処理方法 |
JPH0917763A (ja) * | 1995-06-30 | 1997-01-17 | Nkk Corp | 半導体ウエハの洗浄方法 |
US6875289B2 (en) * | 2002-09-13 | 2005-04-05 | Fsi International, Inc. | Semiconductor wafer cleaning systems and methods |
JP2005311023A (ja) | 2004-04-21 | 2005-11-04 | Matsushita Electric Ind Co Ltd | 薬液処理装置 |
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JP2000098313A (ja) | 1998-09-17 | 2000-04-07 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JP2005079460A (ja) | 2003-09-02 | 2005-03-24 | Murata Mfg Co Ltd | リフトオフ用剥離装置 |
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