JP7400715B2 - 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 - Google Patents

炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 Download PDF

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JP7400715B2
JP7400715B2 JP2020530943A JP2020530943A JP7400715B2 JP 7400715 B2 JP7400715 B2 JP 7400715B2 JP 2020530943 A JP2020530943 A JP 2020530943A JP 2020530943 A JP2020530943 A JP 2020530943A JP 7400715 B2 JP7400715 B2 JP 7400715B2
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silicon carbide
defect
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carbide epitaxial
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JPWO2020017208A1 (ja
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健司 神原
洋典 伊東
勉 堀
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Sumitomo Electric Industries Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
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    • H01L21/02612—Formation types
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
JP2020530943A 2018-07-20 2019-06-14 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 Active JP7400715B2 (ja)

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JP2018136684 2018-07-20
JP2018136684 2018-07-20
PCT/JP2019/023624 WO2020017208A1 (ja) 2018-07-20 2019-06-14 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

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Citations (9)

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JP2006018767A (ja) 2004-07-05 2006-01-19 Ckd Corp 真空圧力制御システム
WO2011074453A1 (ja) 2009-12-14 2011-06-23 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
JP2013216554A (ja) 2012-04-12 2013-10-24 Nippon Steel & Sumitomo Metal Corp 炭化珪素エピタキシャルウェハの製造装置及び炭化珪素エピタキシャルウェハの製造方法
JP2014001108A (ja) 2012-06-19 2014-01-09 Showa Denko Kk ＳｉＣエピタキシャルウェハ及びその製造方法
JP2014019596A (ja) 2012-07-17 2014-02-03 Mitsubishi Electric Corp エピタキシャル成長装置、炭化珪素エピタキシャルウエハ、および炭化珪素エピタキシャルウエハ製造方法
JP2016183087A (ja) 2015-03-27 2016-10-20 パナソニック株式会社 炭化珪素エピタキシャル基板の製造方法
JP2017011102A (ja) 2015-06-22 2017-01-12 昭和電工株式会社 炭化珪素膜の成膜装置のクリーニング方法
WO2017138247A1 (ja) 2016-02-10 2017-08-17 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
WO2017141486A1 (ja) 2016-02-15 2017-08-24 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

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US8044408B2 (en) * 2009-05-20 2011-10-25 Nippon Steel Corporation SiC single-crystal substrate and method of producing SiC single-crystal substrate
JP2013053049A (ja) * 2011-09-06 2013-03-21 Sumitomo Electric Ind Ltd 炭化珪素基板、炭化珪素基板の製造方法、および半導体装置の製造方法
JP2014203833A (ja) * 2013-04-01 2014-10-27 住友電気工業株式会社 炭化珪素半導体装置の製造方法
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Publication number Priority date Publication date Assignee Title
JP2006018767A (ja) 2004-07-05 2006-01-19 Ckd Corp 真空圧力制御システム
WO2011074453A1 (ja) 2009-12-14 2011-06-23 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
JP2013216554A (ja) 2012-04-12 2013-10-24 Nippon Steel & Sumitomo Metal Corp 炭化珪素エピタキシャルウェハの製造装置及び炭化珪素エピタキシャルウェハの製造方法
JP2014001108A (ja) 2012-06-19 2014-01-09 Showa Denko Kk ＳｉＣエピタキシャルウェハ及びその製造方法
JP2014019596A (ja) 2012-07-17 2014-02-03 Mitsubishi Electric Corp エピタキシャル成長装置、炭化珪素エピタキシャルウエハ、および炭化珪素エピタキシャルウエハ製造方法
JP2016183087A (ja) 2015-03-27 2016-10-20 パナソニック株式会社 炭化珪素エピタキシャル基板の製造方法
JP2017011102A (ja) 2015-06-22 2017-01-12 昭和電工株式会社 炭化珪素膜の成膜装置のクリーニング方法
WO2017138247A1 (ja) 2016-02-10 2017-08-17 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
WO2017141486A1 (ja) 2016-02-15 2017-08-24 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

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US20210320005A1 (en) 2021-10-14
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CN112470255B (zh) 2024-03-19
WO2020017208A1 (ja) 2020-01-23

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