JP7394083B2 - レーザ装置 - Google Patents
レーザ装置 Download PDFInfo
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- JP7394083B2 JP7394083B2 JP2021038910A JP2021038910A JP7394083B2 JP 7394083 B2 JP7394083 B2 JP 7394083B2 JP 2021038910 A JP2021038910 A JP 2021038910A JP 2021038910 A JP2021038910 A JP 2021038910A JP 7394083 B2 JP7394083 B2 JP 7394083B2
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- 239000011324 bead Substances 0.000 claims description 48
- 239000012790 adhesive layer Substances 0.000 claims description 33
- 125000006850 spacer group Chemical group 0.000 claims description 17
- 239000000835 fiber Substances 0.000 claims description 9
- 230000010355 oscillation Effects 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 description 26
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 13
- 238000005259 measurement Methods 0.000 description 8
- 230000004044 response Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0401—Arrangements for thermal management of optical elements being part of laser resonator, e.g. windows, mirrors, lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
- H01S3/08022—Longitudinal modes
- H01S3/08027—Longitudinal modes by a filter, e.g. a Fabry-Perot filter is used for wavelength setting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Description
共振器を含むレーザの構成要素を筐体内に収容し、
上記筐体を、接着剤層を介して温度調節素子に接合し、
上記筐体の検出温度に基づいて上記温度調節素子を駆動して筐体を所定温度に調節するレーザ装置において、
上記接着剤層として、上記筐体と上記温度調節素子との間の距離を規定する、複数の略均一形状のスペーサが分散されている接着剤層が用いられたことを特徴とするものである。
10、40 筐体
11 レーザダイオード
12、16 コリメートレンズ
13 バンドパスフィルタ
14、70 収束レンズ
15、72 共振器ミラー
21、22 接着剤層
30 ペルチェ素子
42 サーミスタ
43 コントローラ
50 ビーズ
60 ファイバー
71 Nd:YAG結晶
Claims (8)
- 共振器および該共振器に向かって進行する光を発するレーザダイオードを含むレーザの構成要素を複数、レーザ光の進行方向に沿って配列して筐体内に収容し、
前記筐体を、前記配列の方向と略平行に延びる接着剤層を介して温度調節素子に接合し、
前記筐体の検出温度に基づいて前記温度調節素子を駆動して前記筐体を所定温度に調節
するレーザ装置において、
前記接着剤層として、前記筐体と前記温度調節素子との間の距離を規定する、複数の略均一形状のスペーサが分散されている接着剤層が用いられたことを特徴とするレーザ装置。 - 前記スペーサが、球状のビーズである請求項1に記載のレーザ装置。
- 前記ビーズの外径が10μm~100μmの範囲にある請求項2に記載のレーザ装置。
- 前記スペーサが、円柱状のファイバーである請求項1に記載のレーザ装置。
- 前記スペーサが、ガラスあるいはセラミックスからなるものである請求項1~4のいずれか1項に記載のレーザ装置。
- 前記筐体内に収容されたレーザが、外部共振器型レーザである請求項1~5のいずれか1項に記載のレーザ装置。
- 前記筐体内に収容されたレーザが、レーザダイオード励起固体レーザである請求項1~5のいずれか1項に記載のレーザ装置。
- 前記筐体内に収容されたレーザが、発振波長を狭帯域化する波長制御素子を含むものである請求項1~7のいずれか1項に記載のレーザ装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021038910A JP7394083B2 (ja) | 2021-03-11 | 2021-03-11 | レーザ装置 |
US17/690,603 US20220294173A1 (en) | 2021-03-11 | 2022-03-09 | Laser apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021038910A JP7394083B2 (ja) | 2021-03-11 | 2021-03-11 | レーザ装置 |
Publications (2)
Publication Number | Publication Date |
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JP2022138813A JP2022138813A (ja) | 2022-09-26 |
JP7394083B2 true JP7394083B2 (ja) | 2023-12-07 |
Family
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JP2021038910A Active JP7394083B2 (ja) | 2021-03-11 | 2021-03-11 | レーザ装置 |
Country Status (2)
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US (1) | US20220294173A1 (ja) |
JP (1) | JP7394083B2 (ja) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001070787A (ja) | 1999-09-06 | 2001-03-21 | Fuji Photo Film Co Ltd | 光学部品およびレーザー並びに露光装置 |
JP2001196683A (ja) | 2000-01-17 | 2001-07-19 | Fuji Photo Film Co Ltd | 半導体レーザモジュールおよびその作製方法 |
JP2001337253A (ja) | 2000-03-22 | 2001-12-07 | Matsushita Electric Ind Co Ltd | 光導波路デバイス集積モジュールおよびその実装方法 |
JP2003080604A (ja) | 2001-09-10 | 2003-03-19 | Fuji Photo Film Co Ltd | 積層造形装置 |
JP2005265900A (ja) | 2004-03-16 | 2005-09-29 | Sumitomo Osaka Cement Co Ltd | 半導体素子モジュール |
JP2006086396A (ja) | 2004-09-17 | 2006-03-30 | Yokogawa Electric Corp | 光モジュール |
JP2009164443A (ja) | 2008-01-09 | 2009-07-23 | Seiko Epson Corp | 光源装置、照明装置及び画像表示装置 |
US20100091804A1 (en) | 2006-12-22 | 2010-04-15 | Pgt Photonics S.P.A. | Phase control by active thermal adjustments in an external cavity laser |
CN102227045A (zh) | 2011-05-13 | 2011-10-26 | 中国科学院上海光学精密机械研究所 | 激光二极管泵浦的全固态2μm单频激光器 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3817777B2 (ja) * | 1996-05-21 | 2006-09-06 | 株式会社日立製作所 | 光素子搭載モジュールの製造方法 |
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2021
- 2021-03-11 JP JP2021038910A patent/JP7394083B2/ja active Active
-
2022
- 2022-03-09 US US17/690,603 patent/US20220294173A1/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001070787A (ja) | 1999-09-06 | 2001-03-21 | Fuji Photo Film Co Ltd | 光学部品およびレーザー並びに露光装置 |
JP2001196683A (ja) | 2000-01-17 | 2001-07-19 | Fuji Photo Film Co Ltd | 半導体レーザモジュールおよびその作製方法 |
JP2001337253A (ja) | 2000-03-22 | 2001-12-07 | Matsushita Electric Ind Co Ltd | 光導波路デバイス集積モジュールおよびその実装方法 |
JP2003080604A (ja) | 2001-09-10 | 2003-03-19 | Fuji Photo Film Co Ltd | 積層造形装置 |
JP2005265900A (ja) | 2004-03-16 | 2005-09-29 | Sumitomo Osaka Cement Co Ltd | 半導体素子モジュール |
JP2006086396A (ja) | 2004-09-17 | 2006-03-30 | Yokogawa Electric Corp | 光モジュール |
US20100091804A1 (en) | 2006-12-22 | 2010-04-15 | Pgt Photonics S.P.A. | Phase control by active thermal adjustments in an external cavity laser |
JP2009164443A (ja) | 2008-01-09 | 2009-07-23 | Seiko Epson Corp | 光源装置、照明装置及び画像表示装置 |
CN102227045A (zh) | 2011-05-13 | 2011-10-26 | 中国科学院上海光学精密机械研究所 | 激光二极管泵浦的全固态2μm单频激光器 |
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JP2022138813A (ja) | 2022-09-26 |
US20220294173A1 (en) | 2022-09-15 |
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