JP7371955B2 - 流体供給システム - Google Patents
流体供給システム Download PDFInfo
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- JP7371955B2 JP7371955B2 JP2021542046A JP2021542046A JP7371955B2 JP 7371955 B2 JP7371955 B2 JP 7371955B2 JP 2021542046 A JP2021542046 A JP 2021542046A JP 2021542046 A JP2021542046 A JP 2021542046A JP 7371955 B2 JP7371955 B2 JP 7371955B2
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- supply unit
- gas supply
- plate
- process gas
- liquid
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- 239000012530 fluid Substances 0.000 title claims description 90
- 239000007788 liquid Substances 0.000 claims description 107
- 238000004891 communication Methods 0.000 claims description 100
- 230000008016 vaporization Effects 0.000 claims description 3
- 238000009834 vaporization Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 145
- 238000000034 method Methods 0.000 description 86
- 238000010926 purge Methods 0.000 description 64
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B9/00—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour
- B05B9/03—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour characterised by means for supplying liquid or other fluent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/0082—Regulation; Control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/14—Evaporating with heated gases or vapours or liquids in contact with the liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/02—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material to surfaces by single means not covered by groups B05C1/00 - B05C7/00, whether or not also using other means
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Chemical Vapour Deposition (AREA)
Description
上述した実施形態では、液体供給ユニット3及びパージガス供給ユニット6は、それぞれ側板22の内面221及びベース板21の内面212に設けられているが、これに限定されるものではなく、例えば、それぞれベース板21の内面212及び側板22の内面221に設けられてもよい。すなわち、液体供給ユニット3を、ベース板21及び側板22のうちのいずれか一方に設けるとともに、パージガス供給ユニット6を、ベース板21及び側板22のうちのいずれか他方に設ければよい。
Claims (7)
- 第1プレートと、前記第1プレートと直交するように前記第1プレートの長手方向の一方側に設けられる第2プレートと、前記第1プレート及び前記第2プレートと直交するように前記第1プレートの高さ方向の一端に設けられる第3プレートと、を有する支持体と、
前記第3プレートに設けられ、液体を気化させ、液体の気化により生成された第1ガスを供給先に供給する第1ガス供給ユニットと、
前記第1プレート及び前記第2プレートのうちのいずれか一方に設けられ、液体を含む流体を、前記第1ガス供給ユニットに供給する液体供給ユニットと、
前記第1プレート及び前記第2プレートのうちのいずれか他方に設けられ、第2ガスを前記第1ガス供給ユニットに供給する第2ガス供給ユニットと、
前記第1ガス供給ユニットと前記液体供給ユニットとを連通する第1連通機構と、
前記第1ガス供給ユニットと前記第2ガス供給ユニットとを連通する第2連通機構と、を備える、流体供給システム。 - 前記第1ガス供給ユニットは、前記第3プレートの外面に設けられ、
前記液体供給ユニットは、前記第2プレートの内面に設けられ、
前記第3プレートには、第1開口が形成され、
前記第1連通機構は、前記第1開口に収容されるように設けられる連通流路形成ブロックを有する、請求項1に記載の流体供給システム。 - 前記第1ガス供給ユニットは、前記長手方向に沿って延在するように設けられ、
前記液体供給ユニットは、前記高さ方向に沿って延在するように設けられ、
前記連通流路形成ブロックは、前記高さ方向に沿って延在するように設けられる直方体であり、
前記液体供給ユニットの一端と前記第1ガス供給ユニットの一端とは、前記連通流路形成ブロックによって接続される、請求項2に記載の流体供給システム。 - 前記連通流路形成ブロックには、L字型の連通流路が形成され、
前記液体供給ユニット及び前記第1ガス供給ユニットには、それぞれ第1流路及び第2流路が形成され、
前記第1流路と前記第2流路とは、L字型の前記連通流路によって連通される、請求項3に記載の流体供給システム。 - 前記第3プレートには、第2開口が形成され、
前記第2連通機構は、前記第2開口に収容されるように設けられる連通管を有する、請求項1から4のいずれか1項に記載の流体供給システム。 - 前記第2ガス供給ユニットは、前記高さ方向から見て少なくとも一部が前記長手方向に沿って前記第1ガス供給ユニットと重なるように設けられる、請求項1から5のいずれか1項に記載の流体供給システム。
- 前記第3プレートは、前記第1プレート及び前記第2プレートによって支持される、請求項1から6のいずれか1項に記載の流体供給システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019156355 | 2019-08-29 | ||
JP2019156355 | 2019-08-29 | ||
PCT/JP2020/024738 WO2021039073A1 (ja) | 2019-08-29 | 2020-06-24 | 流体供給システム |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021039073A1 JPWO2021039073A1 (ja) | 2021-03-04 |
JP7371955B2 true JP7371955B2 (ja) | 2023-10-31 |
Family
ID=74683649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021542046A Active JP7371955B2 (ja) | 2019-08-29 | 2020-06-24 | 流体供給システム |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220323979A1 (ja) |
JP (1) | JP7371955B2 (ja) |
KR (1) | KR20220035965A (ja) |
TW (1) | TWI735305B (ja) |
WO (1) | WO2021039073A1 (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130333621A1 (en) | 1998-10-27 | 2013-12-19 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
JP2014114463A (ja) | 2012-12-06 | 2014-06-26 | Fujikin Inc | 原料気化供給装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0947697A (ja) * | 1995-08-08 | 1997-02-18 | Sony Corp | 液体気化供給装置 |
JPH11267492A (ja) * | 1998-03-20 | 1999-10-05 | Aera Japan Ltd | 液体材料気化供給装置の液体回収構造 |
US8628618B2 (en) * | 2009-09-29 | 2014-01-14 | Novellus Systems Inc. | Precursor vapor generation and delivery system with filters and filter monitoring system |
WO2013094680A1 (ja) * | 2011-12-20 | 2013-06-27 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および気化装置 |
-
2020
- 2020-06-24 KR KR1020227006107A patent/KR20220035965A/ko not_active Application Discontinuation
- 2020-06-24 JP JP2021542046A patent/JP7371955B2/ja active Active
- 2020-06-24 US US17/638,376 patent/US20220323979A1/en active Pending
- 2020-06-24 WO PCT/JP2020/024738 patent/WO2021039073A1/ja active Application Filing
- 2020-08-05 TW TW109126594A patent/TWI735305B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130333621A1 (en) | 1998-10-27 | 2013-12-19 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
JP2014114463A (ja) | 2012-12-06 | 2014-06-26 | Fujikin Inc | 原料気化供給装置 |
Also Published As
Publication number | Publication date |
---|---|
US20220323979A1 (en) | 2022-10-13 |
TWI735305B (zh) | 2021-08-01 |
WO2021039073A1 (ja) | 2021-03-04 |
TW202108929A (zh) | 2021-03-01 |
KR20220035965A (ko) | 2022-03-22 |
JPWO2021039073A1 (ja) | 2021-03-04 |
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