JP7369306B2 - 半導体デバイスの位置ずれを計測する際役立つデバイス規模フィーチャを有する位置ずれターゲット - Google Patents

半導体デバイスの位置ずれを計測する際役立つデバイス規模フィーチャを有する位置ずれターゲット Download PDF

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JP7369306B2
JP7369306B2 JP2022560881A JP2022560881A JP7369306B2 JP 7369306 B2 JP7369306 B2 JP 7369306B2 JP 2022560881 A JP2022560881 A JP 2022560881A JP 2022560881 A JP2022560881 A JP 2022560881A JP 7369306 B2 JP7369306 B2 JP 7369306B2
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ロイエ ボルコヴィッチ
リラン エルシャルミ
ラビブ ヨハナン
マーク ギノフケル
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KLA Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/22—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring angles or tapers; for testing the alignment of axes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2022560881A 2020-04-15 2020-06-25 半導体デバイスの位置ずれを計測する際役立つデバイス規模フィーチャを有する位置ずれターゲット Active JP7369306B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063010096P 2020-04-15 2020-04-15
US63/010,096 2020-04-15
PCT/US2020/039475 WO2021211154A1 (en) 2020-04-15 2020-06-25 Misregistration target having device-scaled features useful in measuring misregistration of semiconductor devices

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JP2023522847A JP2023522847A (ja) 2023-06-01
JP2023522847A5 JP2023522847A5 (https=) 2023-06-20
JP7369306B2 true JP7369306B2 (ja) 2023-10-25

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US (1) US11532566B2 (https=)
EP (1) EP4111495A4 (https=)
JP (1) JP7369306B2 (https=)
KR (1) KR102630496B1 (https=)
CN (1) CN115428139B (https=)
TW (1) TWI851889B (https=)
WO (1) WO2021211154A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020263391A1 (en) * 2019-06-26 2020-12-30 Kla Corporation Systems and methods for feedforward process control in the manufacture of semiconductor devices
KR102608079B1 (ko) * 2020-05-05 2023-11-29 케이엘에이 코포레이션 고 지형 반도체 스택들에 대한 계측 타겟들
US12014961B2 (en) * 2021-04-19 2024-06-18 Nanya Technology Corporation Method of semiconductor overlay measuring and method of semiconductor structure manufacturing
US11703767B2 (en) * 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
US12094100B2 (en) * 2022-03-03 2024-09-17 Kla Corporation Measurement of stitching error using split targets
US12354970B2 (en) 2022-04-08 2025-07-08 Nanya Technology Corporation Semiconductor device structure with overlay mark
TWI809929B (zh) * 2022-04-08 2023-07-21 南亞科技股份有限公司 具有疊對標記的半導體元件結構
US12243832B2 (en) 2022-04-08 2025-03-04 Nanya Technology Corporation Method for manufacturing semiconductor device structure with overlay marks
US12416867B2 (en) * 2022-09-22 2025-09-16 United Microelectronics Corp. Overlay target and overlay method

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007324371A (ja) 2006-06-01 2007-12-13 Ebara Corp オーバーレイ検査用オーバーレイマーク及びレンズ収差調査用マーク
JP2009532862A (ja) 2006-03-31 2009-09-10 ケーエルエー−テンカー テクノロジィース コーポレイション スキャトロメトリを用いてオーバレイ誤差を検出するための装置および方法
US20120038021A1 (en) 2010-08-11 2012-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Overlay mark enhancement feature
JP2013534314A (ja) 2010-08-03 2013-09-02 ケーエルエー−テンカー コーポレイション 多層オーバーレイ計測ターゲットおよび相補的オーバーレイ計測測定システム
JP2015528922A (ja) 2012-06-26 2015-10-01 ケーエルエー−テンカー コーポレイション 装置様散乱測定法のオーバーレイターゲット
US20160266505A1 (en) 2015-01-30 2016-09-15 Kla-Tencor Corporation Device metrology targets and methods
US20180188663A1 (en) 2017-01-04 2018-07-05 Kla-Tencor Corporation Device-Like Metrology Targets
US20190179231A1 (en) 2017-12-07 2019-06-13 Kla-Tencor Corporation Systems and methods for device-correlated overlay metrology
JP2021511532A (ja) 2018-01-12 2021-05-06 ケーエルエー コーポレイション 傾斜周期構造を有する計測ターゲット及び方法
JP2021515232A (ja) 2018-03-07 2021-06-17 ケーエルエー コーポレイション 荷電粒子ビーム計測システムの帯電効果と放射線損傷を最小化する走査戦略

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7068833B1 (en) * 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US7009704B1 (en) * 2000-10-26 2006-03-07 Kla-Tencor Technologies Corporation Overlay error detection
US7804994B2 (en) 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US6778275B2 (en) * 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
US6982793B1 (en) * 2002-04-04 2006-01-03 Nanometrics Incorporated Method and apparatus for using an alignment target with designed in offset
WO2004053426A1 (en) * 2002-12-05 2004-06-24 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7608468B1 (en) 2003-07-02 2009-10-27 Kla-Tencor Technologies, Corp. Apparatus and methods for determining overlay and uses of same
US7408642B1 (en) * 2006-02-17 2008-08-05 Kla-Tencor Technologies Corporation Registration target design for managing both reticle grid error and wafer overlay
US8804137B2 (en) * 2009-08-31 2014-08-12 Kla-Tencor Corporation Unique mark and method to determine critical dimension uniformity and registration of reticles combined with wafer overlay capability
JP2011155119A (ja) * 2010-01-27 2011-08-11 Hitachi High-Technologies Corp 検査装置及び検査方法
EP2458441B1 (en) * 2010-11-30 2022-01-19 ASML Netherlands BV Measuring method, apparatus and substrate
US9093458B2 (en) * 2012-09-06 2015-07-28 Kla-Tencor Corporation Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
EP2976679B1 (en) * 2013-03-20 2020-02-19 ASML Netherlands B.V. Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method
US9355208B2 (en) * 2013-07-08 2016-05-31 Kla-Tencor Corp. Detecting defects on a wafer
US10935893B2 (en) * 2013-08-11 2021-03-02 Kla-Tencor Corporation Differential methods and apparatus for metrology of semiconductor targets
WO2015196168A1 (en) * 2014-06-21 2015-12-23 Kla-Tencor Corporation Compound imaging metrology targets
NL2017466A (en) * 2015-09-30 2017-04-05 Asml Netherlands Bv Metrology method, target and substrate
US10451412B2 (en) * 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
KR102259091B1 (ko) * 2016-11-10 2021-06-01 에이에스엠엘 네델란즈 비.브이. 스택 차이를 이용한 설계 및 교정
KR102387947B1 (ko) * 2017-11-21 2022-04-18 삼성전자주식회사 오버레이 패턴을 갖는 반도체 소자
KR102778014B1 (ko) * 2017-11-29 2025-03-06 케이엘에이 코포레이션 디바이스 검사 시스템을 사용한 오버레이 에러의 측정
US10579758B2 (en) * 2018-03-29 2020-03-03 Wipro Limited Method and system for implementation of user logic in a field programmable gate array device
WO2020027784A1 (en) 2018-07-30 2020-02-06 Kla-Tencor Corporation Reducing device overlay errors
US11119416B2 (en) * 2018-08-14 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor structure and overlay error estimation
KR102466584B1 (ko) 2019-01-28 2022-11-11 케이엘에이 코포레이션 모아레 타겟 및 반도체 디바이스들의 편심의 측정에 이를 사용하기 위한 방법
WO2020167331A1 (en) 2019-02-15 2020-08-20 Kla-Tencor Corporation Misregistration measurements using combined optical and electron beam technology

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009532862A (ja) 2006-03-31 2009-09-10 ケーエルエー−テンカー テクノロジィース コーポレイション スキャトロメトリを用いてオーバレイ誤差を検出するための装置および方法
JP2007324371A (ja) 2006-06-01 2007-12-13 Ebara Corp オーバーレイ検査用オーバーレイマーク及びレンズ収差調査用マーク
JP2013534314A (ja) 2010-08-03 2013-09-02 ケーエルエー−テンカー コーポレイション 多層オーバーレイ計測ターゲットおよび相補的オーバーレイ計測測定システム
US20120038021A1 (en) 2010-08-11 2012-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Overlay mark enhancement feature
JP2015528922A (ja) 2012-06-26 2015-10-01 ケーエルエー−テンカー コーポレイション 装置様散乱測定法のオーバーレイターゲット
US20160266505A1 (en) 2015-01-30 2016-09-15 Kla-Tencor Corporation Device metrology targets and methods
US20180188663A1 (en) 2017-01-04 2018-07-05 Kla-Tencor Corporation Device-Like Metrology Targets
US20190179231A1 (en) 2017-12-07 2019-06-13 Kla-Tencor Corporation Systems and methods for device-correlated overlay metrology
JP2021511532A (ja) 2018-01-12 2021-05-06 ケーエルエー コーポレイション 傾斜周期構造を有する計測ターゲット及び方法
JP2021515232A (ja) 2018-03-07 2021-06-17 ケーエルエー コーポレイション 荷電粒子ビーム計測システムの帯電効果と放射線損傷を最小化する走査戦略

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CN115428139A (zh) 2022-12-02
CN115428139B (zh) 2024-04-12
TWI851889B (zh) 2024-08-11
EP4111495A1 (en) 2023-01-04
JP2023522847A (ja) 2023-06-01
KR20230002526A (ko) 2023-01-05
US20220013468A1 (en) 2022-01-13
KR102630496B1 (ko) 2024-01-29
EP4111495A4 (en) 2024-04-10
WO2021211154A1 (en) 2021-10-21
TW202205032A (zh) 2022-02-01
US11532566B2 (en) 2022-12-20

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