TWI851889B - 可用於量測半導體裝置之偏移之具有裝置級特徵的偏移目標以及量測該偏移之方法 - Google Patents

可用於量測半導體裝置之偏移之具有裝置級特徵的偏移目標以及量測該偏移之方法 Download PDF

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Publication number
TWI851889B
TWI851889B TW110113340A TW110113340A TWI851889B TW I851889 B TWI851889 B TW I851889B TW 110113340 A TW110113340 A TW 110113340A TW 110113340 A TW110113340 A TW 110113340A TW I851889 B TWI851889 B TW I851889B
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Taiwan
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target
layer
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TW110113340A
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Chinese (zh)
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TW202205032A (zh
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羅伊 弗克維奇
里蘭 葉魯夏米
瑞維 優哈納
馬克 吉納渥克
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美商科磊股份有限公司
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/22—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring angles or tapers; for testing the alignment of axes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW110113340A 2020-04-15 2021-04-14 可用於量測半導體裝置之偏移之具有裝置級特徵的偏移目標以及量測該偏移之方法 TWI851889B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202063010096P 2020-04-15 2020-04-15
US63/010,096 2020-04-15
PCT/US2020/039475 WO2021211154A1 (en) 2020-04-15 2020-06-25 Misregistration target having device-scaled features useful in measuring misregistration of semiconductor devices
WOPCT/US20/39475 2020-06-25

Publications (2)

Publication Number Publication Date
TW202205032A TW202205032A (zh) 2022-02-01
TWI851889B true TWI851889B (zh) 2024-08-11

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TW110113340A TWI851889B (zh) 2020-04-15 2021-04-14 可用於量測半導體裝置之偏移之具有裝置級特徵的偏移目標以及量測該偏移之方法

Country Status (7)

Country Link
US (1) US11532566B2 (https=)
EP (1) EP4111495A4 (https=)
JP (1) JP7369306B2 (https=)
KR (1) KR102630496B1 (https=)
CN (1) CN115428139B (https=)
TW (1) TWI851889B (https=)
WO (1) WO2021211154A1 (https=)

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US12094100B2 (en) * 2022-03-03 2024-09-17 Kla Corporation Measurement of stitching error using split targets
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Also Published As

Publication number Publication date
CN115428139A (zh) 2022-12-02
CN115428139B (zh) 2024-04-12
EP4111495A1 (en) 2023-01-04
JP2023522847A (ja) 2023-06-01
KR20230002526A (ko) 2023-01-05
US20220013468A1 (en) 2022-01-13
KR102630496B1 (ko) 2024-01-29
JP7369306B2 (ja) 2023-10-25
EP4111495A4 (en) 2024-04-10
WO2021211154A1 (en) 2021-10-21
TW202205032A (zh) 2022-02-01
US11532566B2 (en) 2022-12-20

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