CN115428139B - 可用于测量半导体装置偏移的具有装置级特征的偏移目标 - Google Patents

可用于测量半导体装置偏移的具有装置级特征的偏移目标 Download PDF

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Publication number
CN115428139B
CN115428139B CN202080099714.6A CN202080099714A CN115428139B CN 115428139 B CN115428139 B CN 115428139B CN 202080099714 A CN202080099714 A CN 202080099714A CN 115428139 B CN115428139 B CN 115428139B
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China
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target
structures
layer
offset
functional
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Chinese (zh)
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CN115428139A (zh
Inventor
R·弗克维奇
L·叶鲁舍米
R·约哈南
M·吉诺乌克
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/22—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring angles or tapers; for testing the alignment of axes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN202080099714.6A 2020-04-15 2020-06-25 可用于测量半导体装置偏移的具有装置级特征的偏移目标 Active CN115428139B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063010096P 2020-04-15 2020-04-15
US63/010,096 2020-04-15
PCT/US2020/039475 WO2021211154A1 (en) 2020-04-15 2020-06-25 Misregistration target having device-scaled features useful in measuring misregistration of semiconductor devices

Publications (2)

Publication Number Publication Date
CN115428139A CN115428139A (zh) 2022-12-02
CN115428139B true CN115428139B (zh) 2024-04-12

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Country Status (7)

Country Link
US (1) US11532566B2 (https=)
EP (1) EP4111495A4 (https=)
JP (1) JP7369306B2 (https=)
KR (1) KR102630496B1 (https=)
CN (1) CN115428139B (https=)
TW (1) TWI851889B (https=)
WO (1) WO2021211154A1 (https=)

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US12014961B2 (en) * 2021-04-19 2024-06-18 Nanya Technology Corporation Method of semiconductor overlay measuring and method of semiconductor structure manufacturing
US11703767B2 (en) * 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
US12094100B2 (en) * 2022-03-03 2024-09-17 Kla Corporation Measurement of stitching error using split targets
US12354970B2 (en) 2022-04-08 2025-07-08 Nanya Technology Corporation Semiconductor device structure with overlay mark
TWI809929B (zh) * 2022-04-08 2023-07-21 南亞科技股份有限公司 具有疊對標記的半導體元件結構
US12243832B2 (en) 2022-04-08 2025-03-04 Nanya Technology Corporation Method for manufacturing semiconductor device structure with overlay marks
US12416867B2 (en) * 2022-09-22 2025-09-16 United Microelectronics Corp. Overlay target and overlay method

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JP2011155119A (ja) * 2010-01-27 2011-08-11 Hitachi High-Technologies Corp 検査装置及び検査方法
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WO2004053426A1 (en) * 2002-12-05 2004-06-24 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7408642B1 (en) * 2006-02-17 2008-08-05 Kla-Tencor Technologies Corporation Registration target design for managing both reticle grid error and wafer overlay
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CN105684127A (zh) * 2013-08-11 2016-06-15 科磊股份有限公司 用于半导体目标的度量的差分方法及设备
CN108292103A (zh) * 2015-09-30 2018-07-17 Asml荷兰有限公司 计量方法、目标和衬底
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Also Published As

Publication number Publication date
CN115428139A (zh) 2022-12-02
TWI851889B (zh) 2024-08-11
EP4111495A1 (en) 2023-01-04
JP2023522847A (ja) 2023-06-01
KR20230002526A (ko) 2023-01-05
US20220013468A1 (en) 2022-01-13
KR102630496B1 (ko) 2024-01-29
JP7369306B2 (ja) 2023-10-25
EP4111495A4 (en) 2024-04-10
WO2021211154A1 (en) 2021-10-21
TW202205032A (zh) 2022-02-01
US11532566B2 (en) 2022-12-20

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