JP7359754B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP7359754B2
JP7359754B2 JP2020514792A JP2020514792A JP7359754B2 JP 7359754 B2 JP7359754 B2 JP 7359754B2 JP 2020514792 A JP2020514792 A JP 2020514792A JP 2020514792 A JP2020514792 A JP 2020514792A JP 7359754 B2 JP7359754 B2 JP 7359754B2
Authority
JP
Japan
Prior art keywords
transistor
gate
oxide
electrically connected
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020514792A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2019202431A5 (zh
JPWO2019202431A1 (ja
Inventor
貴彦 石津
誠一 米田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JPWO2019202431A1 publication Critical patent/JPWO2019202431A1/ja
Publication of JPWO2019202431A5 publication Critical patent/JPWO2019202431A5/ja
Priority to JP2023166806A priority Critical patent/JP2023175881A/ja
Application granted granted Critical
Publication of JP7359754B2 publication Critical patent/JP7359754B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/0941—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors of complementary type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computing Systems (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2020514792A 2018-04-20 2019-04-08 半導体装置 Active JP7359754B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023166806A JP2023175881A (ja) 2018-04-20 2023-09-28 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018081075 2018-04-20
JP2018081075 2018-04-20
JP2018085916 2018-04-27
JP2018085916 2018-04-27
PCT/IB2019/052859 WO2019202431A1 (ja) 2018-04-20 2019-04-08 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023166806A Division JP2023175881A (ja) 2018-04-20 2023-09-28 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2019202431A1 JPWO2019202431A1 (ja) 2021-05-20
JPWO2019202431A5 JPWO2019202431A5 (zh) 2022-03-30
JP7359754B2 true JP7359754B2 (ja) 2023-10-11

Family

ID=68238806

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020514792A Active JP7359754B2 (ja) 2018-04-20 2019-04-08 半導体装置
JP2023166806A Pending JP2023175881A (ja) 2018-04-20 2023-09-28 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023166806A Pending JP2023175881A (ja) 2018-04-20 2023-09-28 半導体装置

Country Status (5)

Country Link
US (1) US11935899B2 (zh)
JP (2) JP7359754B2 (zh)
KR (2) KR102609662B1 (zh)
CN (1) CN111989865A (zh)
WO (1) WO2019202431A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020201860A1 (ja) 2019-03-29 2020-10-08 株式会社半導体エネルギー研究所 単極性トランジスタを用いて構成された論理回路、および、半導体装置
CN115053344A (zh) * 2020-03-13 2022-09-13 株式会社半导体能源研究所 半导体装置及电子设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004354970A (ja) 2003-05-02 2004-12-16 Matsushita Electric Ind Co Ltd 半導体回路装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4647798A (en) * 1985-04-15 1987-03-03 Ncr Corporation Negative input voltage CMOS circuit
DE19622646B4 (de) 1995-06-06 2005-03-03 Kabushiki Kaisha Toshiba, Kawasaki Integrierte Halbleiterschaltungsvorrichtung
JP3195203B2 (ja) * 1995-06-06 2001-08-06 株式会社東芝 半導体集積回路
JP3547906B2 (ja) * 1996-06-18 2004-07-28 株式会社東芝 半導体集積回路装置
JP3400294B2 (ja) * 1997-04-25 2003-04-28 富士通株式会社 プル・アップ回路及び半導体装置
JP2001036388A (ja) * 1999-07-16 2001-02-09 Sharp Corp レベルシフト回路および半導体装置
JP3865689B2 (ja) * 2002-01-15 2007-01-10 松下電器産業株式会社 レベルシフト回路
JP3800520B2 (ja) 2002-02-22 2006-07-26 株式会社ルネサステクノロジ 半導体集積回路装置と半導体装置
US6960953B2 (en) 2003-05-02 2005-11-01 Matsushita Electric Industrial Co., Ltd. Semiconductor circuit device
WO2011043175A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and display device having the same
WO2011155295A1 (en) 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
JP6099336B2 (ja) 2011-09-14 2017-03-22 株式会社半導体エネルギー研究所 発光装置
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
JP2015177347A (ja) * 2014-03-14 2015-10-05 株式会社東芝 レベルシフト回路
WO2021005439A1 (ja) * 2019-07-05 2021-01-14 株式会社半導体エネルギー研究所 半導体装置、蓄電装置および半導体装置の動作方法
CN115053344A (zh) * 2020-03-13 2022-09-13 株式会社半导体能源研究所 半导体装置及电子设备

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004354970A (ja) 2003-05-02 2004-12-16 Matsushita Electric Ind Co Ltd 半導体回路装置

Also Published As

Publication number Publication date
US11935899B2 (en) 2024-03-19
KR20230165391A (ko) 2023-12-05
KR102658082B1 (ko) 2024-04-18
JP2023175881A (ja) 2023-12-12
CN111989865A (zh) 2020-11-24
US20210167095A1 (en) 2021-06-03
WO2019202431A1 (ja) 2019-10-24
KR20210002557A (ko) 2021-01-08
JPWO2019202431A1 (ja) 2021-05-20
KR102609662B1 (ko) 2023-12-06

Similar Documents

Publication Publication Date Title
JP2023175881A (ja) 半導体装置
JP2020010050A (ja) 半導体装置
JP7198884B2 (ja) 表示装置の作製方法
KR20100037407A (ko) 인버터 및 그의 동작방법과 인버터를 포함하는 논리회로
JP6113500B2 (ja) 半導体装置及び半導体装置の製造方法
KR20160004936A (ko) 반도체 장치, 및 전자 기기
JP6518312B2 (ja) 半導体装置
TW201246210A (en) Semiconductor storage device
JP5980538B2 (ja) 半導体装置
CN113167821B (zh) 二次电池的异常检测装置以及半导体装置
WO2020201860A1 (ja) 単極性トランジスタを用いて構成された論理回路、および、半導体装置
WO2020174303A1 (ja) 半導体装置及び半導体装置の動作方法
JP6785543B2 (ja) 半導体装置
JP7412346B2 (ja) 半導体装置
WO2020128713A1 (ja) 単極性トランジスタを用いて構成された論理回路、および、半導体装置
CN114026787A (zh) 半导体装置、蓄电装置以及半导体装置的工作方法
KR20210075106A (ko) 음원 분리 장치, 반도체 장치, 및 전자 기기
JP7264590B2 (ja) 半導体装置及びプログラマブルロジックデバイス
JP7109973B2 (ja) 半導体装置
JP7184480B2 (ja) 半導体装置
US20220020683A1 (en) Semiconductor device
KR20230038731A (ko) 반도체 장치
JP2018129796A (ja) 半導体装置、電子部品、および電子機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220322

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220322

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230606

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230609

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230919

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230928

R150 Certificate of patent or registration of utility model

Ref document number: 7359754

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150