JP7359754B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7359754B2 JP7359754B2 JP2020514792A JP2020514792A JP7359754B2 JP 7359754 B2 JP7359754 B2 JP 7359754B2 JP 2020514792 A JP2020514792 A JP 2020514792A JP 2020514792 A JP2020514792 A JP 2020514792A JP 7359754 B2 JP7359754 B2 JP 7359754B2
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- transistor
- gate
- oxide
- electrically connected
- insulator
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Description
本発明の一態様である半導体装置の構成について説明する。
上記実施の形態1で説明した半導体装置とは異なる、本発明の一態様である半導体装置の構成について説明する。
本実施の形態では、上記実施の形態で説明した半導体装置に適用可能なOSトランジスタの構成例について説明する。
図17(A)乃至(C)は、一例として図示するOSトランジスタであるトランジスタ500の断面図である。図17(A)はトランジスタ500のチャネル長方向の断面図であり、図17(B)はトランジスタ500のチャネル幅方向の断面図である。
図18(A)、(B)および(C)を用いてトランジスタ510Aの構造例を説明する。図18(A)はトランジスタ510Aの上面図である。図18(B)は、図18(A)に一点鎖線L1-L2で示す部位の断面図である。図18(C)は、図18(A)に一点鎖線W1-W2で示す部位の断面図である。なお、図18(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
図19(A)、(B)および(C)を用いてトランジスタ510Bの構造例を説明する。図19(A)はトランジスタ510Bの上面図である。図19(B)は、図19(A)に一点鎖線L1-L2で示す部位の断面図である。図19(C)は、図19(A)に一点鎖線W1-W2で示す部位の断面図である。なお、図19(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
図20(A)、(B)および(C)を用いてトランジスタ510Cの構造例を説明する。図20(A)はトランジスタ510Cの上面図である。図20(B)は、図20(A)に一点鎖線L1-L2で示す部位の断面図である。図20(C)は、図20(A)に一点鎖線W1-W2で示す部位の断面図である。なお、図20(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
図21(A)、(B)および(C)を用いてトランジスタ510Dの構造例を説明する。図21(A)はトランジスタ510Dの上面図である。図21(B)は、図21(A)に一点鎖線L1-L2で示す部位の断面図である。図21(C)は、図21(A)に一点鎖線W1-W2で示す部位の断面図である。なお、図21(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
図22(A)乃至図22(C)を用いてトランジスタ510Eの構造例を説明する。図22(A)はトランジスタ510Eの上面図である。図22(B)は、図22(A)に一点鎖線L1-L2で示す部位の断面図である。図22(C)は、図22(A)に一点鎖線W1-W2で示す部位の断面図である。なお、図22(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
本実施の形態では、上記実施の形態で説明した半導体装置を用いることができる電子装置の一例について説明する。
以上の実施の形態、及び実施の形態における各構成の説明について、以下に付記する。
Claims (14)
- 第1入力端子および第2入力端子と、
第1出力端子および第2出力端子と、
第1配線および第2配線と、
第1乃至第4トランジスタと、を有し、
前記第1トランジスタは、ソースまたはドレインの一方が前記第1配線に電気的に接続され、ゲートまたはバックゲートの一方が前記第1入力端子に電気的に接続され、ソースまたはドレインの他方およびゲートまたはバックゲートの他方が前記第2出力端子に電気的に接続され、
前記第2トランジスタは、ソースまたはドレインの一方が前記第1配線に電気的に接続され、ゲートまたはバックゲートの一方が前記第2入力端子に電気的に接続され、ソースまたはドレインの他方およびゲートまたはバックゲートの他方が前記第1出力端子に電気的に接続され、
前記第3トランジスタは、ゲートおよびバックゲートが前記第1入力端子に電気的に接続され、ソースまたはドレインの一方が前記第1出力端子に電気的に接続され、ソースまたはドレインの他方が前記第2配線に電気的に接続され、
前記第4トランジスタは、ゲートおよびバックゲートが前記第2入力端子に電気的に接続され、ソースまたはドレインの一方が前記第2出力端子に電気的に接続され、ソースまたはドレインの他方が前記第2配線に電気的に接続される、半導体装置。 - 第1入力端子および第2入力端子と、
第1出力端子および第2出力端子と、
第1乃至第3配線と、
第1乃至第8トランジスタと、を有し、
前記第1トランジスタは、ソースまたはドレインの一方が前記第1配線に電気的に接続され、ゲートまたはバックゲートの一方が前記第1入力端子に電気的に接続され、ソースまたはドレインの他方およびゲートまたはバックゲートの他方が前記第2トランジスタのゲートおよびバックゲートに電気的に接続され、
前記第2トランジスタは、ソースまたはドレインの一方が前記第2配線に電気的に接続され、ソースまたはドレインの他方が前記第2出力端子に電気的に接続され、
前記第3トランジスタは、ソースまたはドレインの一方が前記第1配線に電気的に接続され、ゲートまたはバックゲートの一方が前記第2入力端子に電気的に接続され、ソースまたはドレインの他方およびゲートまたはバックゲートの他方が前記第4トランジスタのゲートおよびバックゲートに電気的に接続され、
前記第4トランジスタは、ソースまたはドレインの一方が前記第2配線に電気的に接続され、ソースまたはドレインの他方が前記第1出力端子に電気的に接続され、
前記第5トランジスタは、ゲートおよびバックゲートが前記第1入力端子に電気的に接続され、ソースまたはドレインの一方が前記第4トランジスタのゲートおよびバックゲートに電気的に接続され、ソースまたはドレインの他方が前記第3配線に電気的に接続され、
前記第6トランジスタは、ゲートおよびバックゲートが前記第1入力端子に電気的に接続され、ソースまたはドレインの一方が前記第1出力端子に電気的に接続され、ソースまたはドレインの他方が前記第3配線に電気的に接続され、
前記第7トランジスタは、ゲートおよびバックゲートが前記第2入力端子に電気的に接続され、ソースまたはドレインの一方が前記第2トランジスタのゲートおよびバックゲートに電気的に接続され、ソースまたはドレインの他方が前記第3配線に電気的に接続され、
前記第8トランジスタは、ゲートおよびバックゲートが前記第2入力端子に電気的に接続され、ソースまたはドレインの一方が前記第2出力端子に電気的に接続され、ソースまたはドレインの他方が前記第3配線に電気的に接続される半導体装置。 - 請求項2において、前記第1配線に与える第1電位は、前記第2配線に与える第2電位よりも高い半導体装置。
- 請求項1において、
前記第1乃至第4トランジスタは、チャネル形成領域に金属酸化物を有するトランジスタである半導体装置。 - 請求項2において、
前記第1乃至第8トランジスタは、チャネル形成領域に金属酸化物を有するトランジスタである半導体装置。 - 請求項4または5において、
前記金属酸化物は、少なくともIn(インジウム)またはZn(亜鉛)を含む半導体装置。 - 請求項6において、
前記金属酸化物は、Ga(ガリウム)を含む半導体装置。 - 複数のスイッチ回路と、複数の論理回路と、を有し、
前記論理回路は、
第1入力端子および第2入力端子と、
第1出力端子および第2出力端子と、
第1乃至第3配線と、
第1乃至第8トランジスタと、を有し、
前記第1トランジスタは、ソースまたはドレインの一方が前記第1配線に電気的に接続され、ゲートまたはバックゲートの一方が前記第1入力端子に電気的に接続され、ソースまたはドレインの他方およびゲートまたはバックゲートの他方が前記第2トランジスタのゲートおよびバックゲートに電気的に接続され、
前記第2トランジスタは、ソースまたはドレインの一方が前記第2配線に電気的に接続され、ソースまたはドレインの他方が前記第2出力端子に電気的に接続され、
前記第3トランジスタは、ソースまたはドレインの一方が前記第1配線に電気的に接続され、ゲートまたはバックゲートの一方が前記第2入力端子に電気的に接続され、ソースまたはドレインの他方およびゲートまたはバックゲートの他方が前記第4トランジスタのゲートおよびバックゲートに電気的に接続され、
前記第4トランジスタは、ソースまたはドレインの一方が前記第2配線に電気的に接続され、ソースまたはドレインの他方が前記第1出力端子に電気的に接続され、
前記第5トランジスタは、ゲートおよびバックゲートが前記第1入力端子に電気的に接続され、ソースまたはドレインの一方が前記第4トランジスタのゲートおよびバックゲートに電気的に接続され、ソースまたはドレインの他方が前記第3配線に電気的に接続され、
前記第6トランジスタは、ゲートおよびバックゲートが前記第1入力端子に電気的に接続され、ソースまたはドレインの一方が前記第1出力端子に電気的に接続され、ソースまたはドレインの他方が前記第3配線に電気的に接続され、
前記第7トランジスタは、ゲートおよびバックゲートが前記第2入力端子に電気的に接続され、ソースまたはドレインの一方が前記第2トランジスタのゲートおよびバックゲートに電気的に接続され、ソースまたはドレインの他方が前記第3配線に電気的に接続され、
前記第8トランジスタは、ゲートおよびバックゲートが前記第2入力端子に電気的に接続され、ソースまたはドレインの一方が前記第2出力端子に電気的に接続され、ソースまたはドレインの他方が前記第3配線に電気的に接続される半導体装置。 - 請求項8において、前記第1配線に与える第1電位は、前記第2配線に与える第2電位よりも高い半導体装置。
- 請求項8または9において、
前記第1乃至第8トランジスタは、チャネル形成領域に金属酸化物を有するトランジスタである半導体装置。 - 請求項8乃至10のいずれか一において、
前記スイッチ回路は、トランジスタを有し、
前記トランジスタは、チャネル形成領域に金属酸化物を有するトランジスタである半導体装置。 - 請求項8乃至11のいずれか一において、
前記複数のスイッチ回路のいずれか一は、非導通状態とすることで前記論理回路内に保持されたデータに応じた電位を保持する機能を有する半導体装置。 - 請求項10または11において、
前記金属酸化物は、少なくともIn(インジウム)またはZn(亜鉛)を含む半導体装置。 - 請求項10または11において、
前記金属酸化物は、Ga(ガリウム)を含む半導体装置。
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CN115053344A (zh) * | 2020-03-13 | 2022-09-13 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004354970A (ja) | 2003-05-02 | 2004-12-16 | Matsushita Electric Ind Co Ltd | 半導体回路装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4647798A (en) * | 1985-04-15 | 1987-03-03 | Ncr Corporation | Negative input voltage CMOS circuit |
DE19622646B4 (de) | 1995-06-06 | 2005-03-03 | Kabushiki Kaisha Toshiba, Kawasaki | Integrierte Halbleiterschaltungsvorrichtung |
JP3195203B2 (ja) * | 1995-06-06 | 2001-08-06 | 株式会社東芝 | 半導体集積回路 |
JP3547906B2 (ja) * | 1996-06-18 | 2004-07-28 | 株式会社東芝 | 半導体集積回路装置 |
JP3400294B2 (ja) * | 1997-04-25 | 2003-04-28 | 富士通株式会社 | プル・アップ回路及び半導体装置 |
JP2001036388A (ja) * | 1999-07-16 | 2001-02-09 | Sharp Corp | レベルシフト回路および半導体装置 |
JP3865689B2 (ja) * | 2002-01-15 | 2007-01-10 | 松下電器産業株式会社 | レベルシフト回路 |
JP3800520B2 (ja) | 2002-02-22 | 2006-07-26 | 株式会社ルネサステクノロジ | 半導体集積回路装置と半導体装置 |
US6960953B2 (en) | 2003-05-02 | 2005-11-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor circuit device |
WO2011043175A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and display device having the same |
WO2011155295A1 (en) | 2010-06-10 | 2011-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Dc/dc converter, power supply circuit, and semiconductor device |
US9024317B2 (en) | 2010-12-24 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device |
JP6099336B2 (ja) | 2011-09-14 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP5832399B2 (ja) | 2011-09-16 | 2015-12-16 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP2015177347A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | レベルシフト回路 |
WO2021005439A1 (ja) * | 2019-07-05 | 2021-01-14 | 株式会社半導体エネルギー研究所 | 半導体装置、蓄電装置および半導体装置の動作方法 |
CN115053344A (zh) * | 2020-03-13 | 2022-09-13 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
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