JP7355746B2 - ルテニウム含有薄膜の製造方法およびこれにより製造されたルテニウム含有薄膜 - Google Patents
ルテニウム含有薄膜の製造方法およびこれにより製造されたルテニウム含有薄膜 Download PDFInfo
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- JP7355746B2 JP7355746B2 JP2020543444A JP2020543444A JP7355746B2 JP 7355746 B2 JP7355746 B2 JP 7355746B2 JP 2020543444 A JP2020543444 A JP 2020543444A JP 2020543444 A JP2020543444 A JP 2020543444A JP 7355746 B2 JP7355746 B2 JP 7355746B2
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- Prior art keywords
- ruthenium
- thin film
- containing thin
- producing
- compound
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title claims description 259
- 239000010409 thin film Substances 0.000 title claims description 219
- 229910052707 ruthenium Inorganic materials 0.000 title claims description 216
- 238000004519 manufacturing process Methods 0.000 title claims description 71
- 239000000758 substrate Substances 0.000 claims description 60
- 239000007789 gas Substances 0.000 claims description 59
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 46
- 150000002430 hydrocarbons Chemical class 0.000 claims description 46
- 239000000203 mixture Substances 0.000 claims description 45
- 239000000126 substance Substances 0.000 claims description 43
- 239000001257 hydrogen Substances 0.000 claims description 36
- 229910052739 hydrogen Inorganic materials 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 35
- 239000002243 precursor Substances 0.000 claims description 34
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 32
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 25
- 238000000231 atomic layer deposition Methods 0.000 claims description 25
- 150000001875 compounds Chemical class 0.000 claims description 25
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 25
- 229910000077 silane Inorganic materials 0.000 claims description 25
- 229910052786 argon Inorganic materials 0.000 claims description 23
- NZZFYRREKKOMAT-UHFFFAOYSA-N diiodomethane Chemical compound ICI NZZFYRREKKOMAT-UHFFFAOYSA-N 0.000 claims description 20
- 125000006701 (C1-C7) alkyl group Chemical group 0.000 claims description 18
- 239000012159 carrier gas Substances 0.000 claims description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- HVTICUPFWKNHNG-UHFFFAOYSA-N iodoethane Chemical compound CCI HVTICUPFWKNHNG-UHFFFAOYSA-N 0.000 claims description 12
- 239000000376 reactant Substances 0.000 claims description 11
- 238000000427 thin-film deposition Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- OKJPEAGHQZHRQV-UHFFFAOYSA-N iodoform Chemical compound IC(I)I OKJPEAGHQZHRQV-UHFFFAOYSA-N 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- RNRZLEZABHZRSX-UHFFFAOYSA-N diiodosilicon Chemical compound I[Si]I RNRZLEZABHZRSX-UHFFFAOYSA-N 0.000 claims description 4
- 102100037328 Chitotriosidase-1 Human genes 0.000 claims description 3
- 101000879661 Homo sapiens Chitotriosidase-1 Proteins 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 claims description 3
- 150000003304 ruthenium compounds Chemical class 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 description 42
- -1 acyclic alkene compound Chemical class 0.000 description 28
- 239000010408 film Substances 0.000 description 26
- 238000002347 injection Methods 0.000 description 26
- 239000007924 injection Substances 0.000 description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 25
- 239000001301 oxygen Substances 0.000 description 25
- 229910052760 oxygen Inorganic materials 0.000 description 25
- 229940125904 compound 1 Drugs 0.000 description 23
- 238000004458 analytical method Methods 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 17
- 238000000151 deposition Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- 125000004432 carbon atom Chemical group C* 0.000 description 13
- 229910001220 stainless steel Inorganic materials 0.000 description 12
- 239000010935 stainless steel Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 125000000217 alkyl group Chemical group 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 229940125782 compound 2 Drugs 0.000 description 7
- 229940126214 compound 3 Drugs 0.000 description 7
- 150000001351 alkyl iodides Chemical class 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 6
- AIHCVGFMFDEUMO-UHFFFAOYSA-N diiodosilane Chemical compound I[SiH2]I AIHCVGFMFDEUMO-UHFFFAOYSA-N 0.000 description 6
- 125000002015 acyclic group Chemical group 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 125000005842 heteroatom Chemical group 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000011946 reduction process Methods 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 3
- 238000004627 transmission electron microscopy Methods 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 2
- IFTRQJLVEBNKJK-UHFFFAOYSA-N Aethyl-cyclopentan Natural products CCC1CCCC1 IFTRQJLVEBNKJK-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- LRPTXRCORNOMTB-UHFFFAOYSA-N [SiH4].I Chemical group [SiH4].I LRPTXRCORNOMTB-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 238000001678 elastic recoil detection analysis Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- IDIOJRGTRFRIJL-UHFFFAOYSA-N iodosilane Chemical compound I[SiH3] IDIOJRGTRFRIJL-UHFFFAOYSA-N 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- OXJUCLBTTSNHOF-UHFFFAOYSA-N 5-ethylcyclopenta-1,3-diene;ruthenium(2+) Chemical compound [Ru+2].CC[C-]1C=CC=C1.CC[C-]1C=CC=C1 OXJUCLBTTSNHOF-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910019897 RuOx Inorganic materials 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
- C07F15/0046—Ruthenium compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H—ELECTRICITY
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Description
薄膜蒸着用の前駆体としてルテニウム(0)系炭化水素化合物および
反応ガスとしてヨード、(C1‐C3)ヨウ化アルキル、ヨウ化シランまたはこれらの混合物を使用してルテニウム含有薄膜を製造するステップを含むことを特徴とする。
a)チャンバ内に取り付けられた基板の温度を80~500℃に維持するステップと、
b)キャリアガスおよびルテニウム(0)系炭化水素化合物を注入するステップと、
c)ヨード、(C1‐C3)ヨウ化アルキル、ヨウ化シランまたはこれらの混合物である反応ガスを注入し、前記基板上にルテニウム含有薄膜を製造するステップとを含む。
[化学式1]
Lは、二重結合が1個~4個存在する、炭素数2~10の非環状アルケン化合物、炭素数3~10の環状アルケン化合物、窒素または酸素から選択されるヘテロ原子が1個~4個含まれる炭素数2~8の非環状または環状ヘテロアルケン類似構造化合物およびカルボニル基含有化合物から選択される1種の化合物である中性リガンドであり、
R1~R6は、互いに独立して、水素または(C1‐C7)アルキルである。)
[化学式1‐1]
R1~R10は、互いに独立して、水素または(C1‐C7)アルキルであり、
A1は、単結合または‐(CR11R12)m‐であり、R11およびR12は、互いに独立して、水素または(C1‐C7)アルキルであり、mは、1~3の整数であり、
A2は、‐(CR11R12)n‐であり、R11およびR12は、互いに独立して、水素または(C1‐C7)アルキルであり、nは、1~3の整数である。)
[化学式2]
R1~R6は、互いに独立して、水素または(C1‐C7)アルキルであり、
R7~R10は、互いに独立して、水素または(C1‐C7)アルキルであり、
A1は、単結合または‐(CR11R12)m‐であり、R11およびR12は、互いに独立して、水素または(C1‐C7)アルキルであり、mは、1~3の整数である。)
「ヘテロアルケン類似化合物」は、アルケン化合物に一つ以上のヘテロ原子を含むアルケン化合物として非環状または環状であってもよく、ヘテロ原子は、窒素、酸素、硫黄、リンなどから選択され得るが、好ましくは、酸素または窒素であってもよく、酸素または窒素が一つまたは二つ以上含まれ得る。
薄膜蒸着用の前駆体としてルテニウム(0)系炭化水素化合物および
反応ガスとしてヨード、(C1‐C3)ヨウ化アルキル、ヨウ化シランまたはこれらの混合物を使用してルテニウム含有薄膜を製造するステップを含む。
a)チャンバ内に取り付けられた基板の温度を80~500℃に維持するステップと、
b)キャリアガスおよびルテニウム(0)系炭化水素化合物を注入するステップと、
c)ヨード、(C1‐C3)ヨウ化アルキル、ヨウ化シランまたはこれらの混合物である反応ガスを注入し、前記基板上にルテニウム含有薄膜を製造するステップとを含むことができる。
Lは、二重結合が1個~4個存在する、炭素数2~10の非環状アルケン化合物、炭素数3~10の環状アルケン化合物、窒素または酸素から選択されるヘテロ原子が1個~4個含まれる炭素数2~8の非環状または環状ヘテロアルケン類似構造化合物およびカルボニル基含有化合物から選択される1種の化合物である中性リガンドであり、
R1~R6は、互いに独立して、水素または(C1‐C7)アルキルである。)
[化学式1‐1]
R1~R10は、互いに独立して、水素または(C1‐C7)アルキルであり、
A1は、単結合または‐(CR11R12)m‐であり、R11およびR12は、互いに独立して、水素または(C1‐C7)アルキルであり、mは、1~3の整数であり、
A2は、‐(CR11R12)n‐であり、R11およびR12は、互いに独立して、水素または(C1‐C7)アルキルであり、nは、1~3の整数である。)
R1~R6は、互いに独立して、水素または(C1‐C7)アルキルであり、
R7~R10は、互いに独立して、水素または(C1‐C7)アルキルであり、
A1は、単結合または‐(CR11R12)m‐であり、R11およびR12は、互いに独立して、水素または(C1‐C7)アルキルであり、mは、1~3の整数である。)
Ru含有前駆体化合物として
(化合物1)を使用し、反応ガスとしてヨードエタン(CH3CH2I)を使用し、原子層蒸着法(Atomic layer deposition)によってルテニウム含有薄膜を形成した。
Ru含有前駆体化合物として
(化合物1)を使用し、反応ガスとしてジヨードメタン(CH2I2)を使用し、原子層蒸着法(Atomic layer deposition)によってルテニウム含有薄膜を形成した。
Ru含有前駆体化合物として
(化合物1)を使用し、反応ガスとしてジヨードメタン(CH2I2)を使用し、化学気相蒸着(CVD)法でルテニウム含有薄膜を形成した。
実施例1で反応ガスとしてヨードエタンの代わりに酸素を使用した以外は、実施例1と同様に実施してルテニウム含有薄膜を製造し、具体的なルテニウム含有薄膜蒸着条件は、下記の表4に示した。
実施例1で反応ガスとしてヨードエタンの代わりに水素を使用した以外は、実施例1と同様に実施してルテニウム含有薄膜を製造し、具体的なルテニウム含有薄膜蒸着条件は、表5に示した。
Ru含有前駆体化合物として
(化合物1)を使用し、反応ガスとしてジヨードシラン(SiH2I2)を使用し、原子層蒸着法(Atomic layer deposition)によってルテニウム含有薄膜を形成した。
Ru含有前駆体化合物として
(化合物2)を使用し、反応ガスとしてジヨードメタン(CH2I2)を使用し、原子層蒸着法(Atomic layer deposition)によってルテニウム含有薄膜を形成した。
Ru含有前駆体化合物として
((isoprene)Ru(CO)3、化合物3)を使用し、反応ガスとしてジヨードメタン(CH2I2)を使用し、原子層蒸着法(Atomic layer deposition)によってルテニウム含有薄膜を形成した。
実施例1で化合物1の注入時間を0.5秒から5秒まで変化を与えた以外は、実施例1と同様に実施してルテニウム含有薄膜を製造した。
実施例2で化合物1の注入時間を0.5秒から5秒まで変化を与えた以外は、実施例2と同様に実施してルテニウム含有薄膜を製造した。
実施例5で化合物2の注入時間を0.5秒から5秒まで変化を与えた以外は、実施例5と同様に実施してルテニウム含有薄膜を製造した。
実施例6で化合物3の注入時間を0.5秒から5秒まで変化を与えた以外は、実施例6と同様に実施してルテニウム含有薄膜を製造した。
実施例1でヨードエタンの注入時間を0.1秒から5秒まで変化を与えた以外は、実施例1と同様に実施してルテニウム含有薄膜を製造した。
実施例2でジヨードメタンの注入時間を0.1秒から5秒まで変化を与えた以外は、実施例2と同様に実施してルテニウム含有薄膜を製造した。
実施例4でジヨードシランの注入時間を0.1秒から5秒まで変化を与えた以外は、実施例4と同様に実施してルテニウム含有薄膜を製造した。
比較例1で酸素ガスの注入時間を0.1秒から5秒まで変化を与えた以外は、比較例1と同様に実施してルテニウム含有薄膜を製造した。
実施例1で基板の温度を200℃から360℃まで変化を与えた以外は、実施例1と同様に実施してルテニウム含有薄膜を製造した。
実施例2で基板の温度を200℃から360℃まで変化を与えた以外は、実施例2と同様に実施してルテニウム含有薄膜を製造した。
実施例4で基板の温度を200℃から360℃まで変化を与えた以外は、実施例4と同様に実施してルテニウム含有薄膜を製造した。
比較例1で基板の温度を200℃から360℃まで変化を与えた以外は、比較例1と同様に実施してルテニウム含有薄膜を製造した。
実施例5で基板の温度を200℃から360℃まで変化を与えた以外は、実施例5と同様に実施してルテニウム含有薄膜を製造した。
実施例6で基板の温度を200℃から360℃まで変化を与えた以外は、実施例6と同様に実施してルテニウム含有薄膜を製造した。
実施例2で蒸着回数を10周期から300周期まで変化を与えた以外は、実施例2と同様に実施してルテニウム含有薄膜を製造した。
Claims (8)
- 薄膜蒸着用の前駆体として0価のルテニウム系化合物を使用し、
反応ガスとしてヨード、(C1‐C3)ヨウ化アルキル、ヨウ化シランまたはこれらの混合物を使用してルテニウム含有薄膜を製造するステップを含み、
前記0価のルテニウム系化合物は、下記化学式1-1および2で表される0価のルテニウム系炭化水素化合物からなる群から選択されるいずれか一つまたは二つ以上の混合物である、ルテニウム含有薄膜の製造方法。
[化学式1-1]
(化学式1-1中、
R1~R10は、互いに独立して、水素または(C1‐C7)アルキルであり、
A1は、単結合または‐(CR11R12)m‐であり、R11およびR12は、互いに独立して、水素または(C1‐C7)アルキルであり、mは、1~3の整数である。)
[化学式2]
(化学式2中、
R1~R6は、互いに独立して、水素または(C1‐C7)アルキルである。) - 原子層蒸着(ALD)法、化学気相蒸着(CVD)法、有機金属化学気相蒸着法(MOCVD)、低圧化学気相蒸着法(LPCVD)、プラズマ強化化学気相蒸着法(PECVD)またはプラズマ強化原子層蒸着法(PEALD)により行われる、請求項1に記載のルテニウム含有薄膜の製造方法。
- a)チャンバ内に取り付けられた基板の温度を80~500℃に維持するステップと、
b)キャリアガスおよび0価のルテニウム系化合物を注入するステップと、
c)ヨード、(C1‐C3)ヨウ化アルキル、ヨウ化シランまたはこれらの混合物である反応ガスを注入し、前記基板上にルテニウム含有薄膜を製造するステップとを含む、請求項1に記載のルテニウム含有薄膜の製造方法。 - 前記反応ガスは、0価のルテニウム系化合物1モルに対して0.1~200モルで使用される、請求項1に記載のルテニウム含有薄膜の製造方法。
- 前記c)ステップの後、熱処理するステップをさらに含む、請求項3に記載のルテニウム含有薄膜の製造方法。
- 前記熱処理は、200~700℃で行われる、請求項5に記載のルテニウム含有薄膜の製造方法。
- 前記反応ガスは、I2、CH3I、CH2I2、CHI3、CH3CH2I、CH3CHI2、ICH2CH2I、CH3CH2CH2I、CH3CHICH3、ICH2CH2CH2IまたはSiH2I2である、請求項1に記載のルテニウム含有薄膜の製造方法。
- 前記キャリアガスは、窒素、水素、アルゴンおよびヘリウムからなる群から選択されるいずれか一つまたは二つ以上の混合物である、請求項3に記載のルテニウム含有薄膜の製造方法。
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PCT/KR2018/013160 WO2019088722A1 (ko) | 2017-11-01 | 2018-11-01 | 루테늄함유 박막의 제조방법 및 이로부터 제조된 루테늄함유 박막 |
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KR102355507B1 (ko) * | 2018-11-14 | 2022-01-27 | (주)디엔에프 | 몰리브덴 함유 박막의 제조방법 및 이로부터 제조된 몰리브덴함유 박막 |
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US20230227975A1 (en) * | 2021-12-30 | 2023-07-20 | Applied Materials, Inc. | Method of depositing metal films |
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US7041596B1 (en) * | 2004-04-08 | 2006-05-09 | Novellus Systems, Inc. | Surface treatment using iodine plasma to improve metal deposition |
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CN111357080A (zh) | 2020-06-30 |
US11827650B2 (en) | 2023-11-28 |
CN111357080B (zh) | 2024-01-12 |
JP2021502492A (ja) | 2021-01-28 |
JP2023139020A (ja) | 2023-10-03 |
KR102374140B1 (ko) | 2022-03-17 |
US20200339617A1 (en) | 2020-10-29 |
KR20190049587A (ko) | 2019-05-09 |
TW201932634A (zh) | 2019-08-16 |
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