WO2009057064A2 - Ruthenium and osmium precursor synthesis method - Google Patents
Ruthenium and osmium precursor synthesis method Download PDFInfo
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- WO2009057064A2 WO2009057064A2 PCT/IB2008/054507 IB2008054507W WO2009057064A2 WO 2009057064 A2 WO2009057064 A2 WO 2009057064A2 IB 2008054507 W IB2008054507 W IB 2008054507W WO 2009057064 A2 WO2009057064 A2 WO 2009057064A2
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- cyclohexadiene
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System compounds of the platinum group
- C07F15/0046—Ruthenium compounds
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System compounds of the platinum group
- C07F15/002—Osmium compounds
Definitions
- This invention relates generally to the field of semiconductor, photovoltaic, flat pane! or LCD-TFT device fabrication.
- Ruthenium and osmium are being, or are expected to be, introduced into many semiconductor, photovoltaic, flat panel or LCD-TFT device fabrication methods. This move towards new materials is necessary to soive issues generated by the continuous scaling trend imposed in these industries, in particular, Ru is considered as a good candidate for electrode capacitors in FeRAM and DRAM applications.
- a method for synthesizing a metal precursor comprises reacting a metal trichloride with carbon monoxide to form a metallic complex, according to the general formula:
- M is ruthenium or osmium
- L is one of ⁇ 4 - cyclobutadiene, acyclic diene, ⁇ 6 -arene, ⁇ 2 -a!kene, ⁇ 2 -alkine, and terminal carbine
- x is between 1 and 4 (such that 1 ⁇ x ⁇ 4); and y is between 1 and 5 (such that 1 ⁇ y ⁇ 5).
- - the metal chloride MCl 3 may be a hydrate (e.g. MCI 3 • H 2 O);
- reaction (I) and reaction (II) are performed in a solvent, and the solvent has a boiling point between about 100 C and about 200 C;
- reaction (I) and reaction (II) are performed at a pressure between about 50 Pa and about 250 Pa, and preferably at atmospheric pressure;
- reaction (I) and reaction (II) are performed at a temperature iess than about 160 C, and preferably between room temperature (e.g. about 21 C) and about 150 C;
- reaction (II) some of the intermediary halide present is removed in reaction (II);
- the haiide is removed by adding one of sodium carbonate, potassium carbonate, copper or zinc;
- the metal precursor composition is one of:
- Ru(CO) 3 (1 ,3-cyclohexadiene); Ru(CO) 3 (1 ,4-cyciohexadiene); Ru(CO) 3 (I -methyl- 1 ,3-cyciohexadiene);
- Ru(CO) 3 (I -ethyi-1 ,3-cyclohexadiene); Ru(CO) 3 (2-ethyl-1 ,3-cyclohexadiene);
- Ru(CO) 3 (5-propyl,1 ,3-cyciohexadiene); Ru(CO) 3 (I -butyl-1 ,3-cyciohexadiene);
- Ru(CO) 3 (3-methyl-1 ,4-cyc!ohexadiene); Ru(CO) 3 (I -ethyl- 1 ,4-cyclohexadiene);
- Ru(CO) 3 (I -propyl-1 ,4-cyciohexadiene); Ru(CO) 3 (3-propyl-1 ,4-cyclohexadiene);
- Os(CO) 3 (2-methyl-1 ,3-cyclohexadiene); Os(CO) 3 (5-methyl,1 ,3-cyclohexadiene);
- Os(CO) 3 (I -propyi-1 , 3-cyclohexadiene); Os(CO) 3 (2-propy!-1 ,3-cyclohexadiene);
- Os(CO) 3 (I -butyl-1 ,3-cyclohexadiene); Os(CO) 3 (2-butyl-1 ,3-cyciohexadiene); Os(CO) 3 (5-buty!,1 ,3-cyc!ohexadiene); Os(CO) 3 (I -methyi-1 ,4-cyclohexadiene); Os(CO) 3 (3-methyl-1 ,4-cyclohexadiene); Os(CO) 3 (I -ethyl-1 ,4-cyclohexadiene);
- Os(CO) 3 (3-ethyl-1 ,4-cyclohexadiene); Os(CO) 3 (I -propyl- 1 ,4-cyclohexadiene); Os(CO) 3 (3-propyl-1 ,4-cyclohexadiene); Os(CO) 3 (I -propyl-1 ,4-cyclohexadiene); and Os ⁇ CO ) 3 (3-propyl-1 ,4-cyclohexadiene); and
- the metal precursor is composition is Ru(CO) 3 (I -methyl- 1 ,4- cyclohexadiene).
- the current invention provides novel methods and compositions for the synthesis of a metal precursor composition.
- the disclosed methods are utilized for the synthesis of ruthenium or osmium precursors.
- a method for synthesizing a metal precursor comprises reacting a metal trichloride with carbon monoxide to form a metallic complex, according to the general formula:
- M is ruthenium or osmium
- L is one of ⁇ 4 - cyclobutadiene, acyclic diene, ⁇ e -arene, ⁇ 2 -a!kene, ⁇ 2 -alkine, and terminal carbine
- x is between 1 and 4 (such that 1 ⁇ x ⁇ 4); and y is between 1 and 5
- This synthesis method may be generally performed at temperatures lower than 160 C, and at pressures near atmospheric, which allows for easy commercialization of this method (as opposed to synthesis methods utilizing
- the starting material i.e. metal trichloride
- the starting material may be in the form of a metal trichlorate hydrate.
- both reactions are performed in a solvent, which may be commerciaily available grade of toluene, xylene, mestiylene, or ethyl digol.
- no pretreatment of the solvent is required for purification purposes.
- both reaction (I) and (II) are performed at a temperature of less than about 160 C, while in other embodiments reaction (I) is performed at about 150 C, and in other embodiments reaction (Ii) is independently performed at a temperature between room temperature and about 150 C.
- halides may be formed in an intermediary reaction. These may be removed through the introduction of a removal agent such as sodium carbonate (Na 2 CO 3 ), potassium carbonate (K 2 CO 3 ), copper or zinc. Removal of the halide may not be stoichiometric, so the addition of the removal agent the may be in excess.
- a removal agent such as sodium carbonate (Na 2 CO 3 ), potassium carbonate (K 2 CO 3 ), copper or zinc. Removal of the halide may not be stoichiometric, so the addition of the removal agent the may be in excess.
- Ruthenium trichloride, RuCl 3 , (1 Og) was suspended in ethyl digol (200ml) under CO, and the suspension was heated to 150C until the solution turned to paie yellow. This is a liquid-gas reaction and bubbling of CO gas gave better results than simple refiuxing under CO, although simple refluxing is also acceptable.
- metal ruthenium was separated out on the walls of the flask. Solvent was removed under reduced pressure and dried. Yellow solid [RuCI 2 (CO) 3 J 2 was obtained.
- Tricarbonyl dichlororuthenium(ll) dimmer was mixed with 1-methyl- 1 ,4-cyclohexadiene and Cu/Zn in toluene, xylene, and/or mesitylene. When Cu/Zn as ha ⁇ de remover was not used, Ru-Cl bond could be cut by heating.
Abstract
Methods of synthesizing ruthenium and osmium precursors, by reacting a metal trichloride with carbon monoxide to form a metallic complex. The resultant metallic complex is then reacted with a ligand to form a metal precursor containing a metal carbonyl complex.
Description
RUTHENIUM AND OSMIUM PRECURSOR SYNTHESIS METHOD
BACKGROUND Field of the Invention
This invention relates generally to the field of semiconductor, photovoltaic, flat pane! or LCD-TFT device fabrication.
Background of the Invention Ruthenium and osmium are being, or are expected to be, introduced into many semiconductor, photovoltaic, flat panel or LCD-TFT device fabrication methods. This move towards new materials is necessary to soive issues generated by the continuous scaling trend imposed in these industries, in particular, Ru is considered as a good candidate for electrode capacitors in FeRAM and DRAM applications.
As new ruthenium precursors are investigated, synthesis methods for these must also be developed. Many synthesis methods known today make use of RU3(CO)-J2. These synthesis methods utilizing Ru3(CO)t2 generally require high temperatures (greater than 250 C)1 and/or a high pressure (5 - 20 atmospheres). Ru3(CO)12 as a feedstock materia! is also usually costly.
Generally, it has been found that high temperature and high pressure synthesis methods present difficulties for commercial mass production.
Consequently, there exists a need for synthesis methods of ruthenium or osmium precursors that may be used commercialiy at lower temperatures and pressures.
BRIEF SUMMARY
The current invention provides novel methods and compositions for the synthesis of a meta! precursor composition. In general, the disclosed methods are utilized for the synthesis of ruthenium or osmium precursors.
In an embodiment, a method for synthesizing a metal precursor comprises reacting a metal trichloride with carbon monoxide to form a metallic complex, according to the general formula:
MCI3 + CO -» [MCi2{CO)3]2 (I). The resulting metallic complex from reaction (I) is then reacted with a ligand to form a metal precursor comprising a metal carbonyl complex, according to the general formula:
[MCI2(CO)3]2 + L ^ LxM(CO)y (II).
In reaction (I) and (II): M is ruthenium or osmium; L is one of η4- cyclobutadiene, acyclic diene, η6-arene, η2-a!kene, η2-alkine, and terminal carbine; x is between 1 and 4 (such that 1 < x < 4); and y is between 1 and 5 (such that 1 < y < 5).
Other embodiments of the current invention may include, without limitation, one or more of the following features: - the metal chloride MCl3 may be a hydrate (e.g. MCI3 • H2O);
- reaction (I) and reaction (II) are performed in a solvent, and the solvent has a boiling point between about 100 C and about 200 C;
- the solvent is one of toluene, xylene, mestiylene, and ethyl digol (2- (2'-methoxyethoxy)ethanol); - reaction (I) and reaction (II) are performed at a pressure between about 50 Pa and about 250 Pa, and preferably at atmospheric pressure;
- reaction (I) and reaction (II) are performed at a temperature iess than about 160 C, and preferably between room temperature (e.g. about 21 C) and about 150 C;
- reaction (I) is performed at about 150 C;
- some of the intermediary halide present is removed in reaction (II);
- the haiide is removed by adding one of sodium carbonate, potassium carbonate, copper or zinc; - the metal precursor composition is one of:
Ru(CO)3(1 ,3-cyclohexadiene); Ru(CO)3(1 ,4-cyciohexadiene);
Ru(CO)3(I -methyl- 1 ,3-cyciohexadiene);
Ru(CO)3(2-methyl-1 I3-cyclohexadiene);
Ru(CO)3(5-methyl,1 ,3-cyclohexadiene);
Ru(CO)3(I -ethyi-1 ,3-cyclohexadiene); Ru(CO)3(2-ethyl-1 ,3-cyclohexadiene);
Ru(CO)3(5-ethyl,1 ,3-cyciohexadiene);
Ru(CO)3(I -propyl-1 ,3-cyclohexadiene);
Ru(CO)3(2-propyl-1 ,3-cyclohexadiene);
Ru(CO)3(5-propyl,1 ,3-cyciohexadiene); Ru(CO)3(I -butyl-1 ,3-cyciohexadiene);
Ru(CO)3(2-butyl-1 ,3-cyclohexadiene);
Ru(CO)3(5~butyl,1 ,3-cyclohexadiene);
Ru(CO)3(I -methyl-1 ,4-cyciohexadiene);
Ru(CO)3(3-methyl-1 ,4-cyc!ohexadiene); Ru(CO)3(I -ethyl- 1 ,4-cyclohexadiene);
Ru(CO)3(3-ethyl-1 ,4-cyclohexadiene);
Ru(CO)3(I -propyi-1 ,4-cyclohexadiene);
Ru(CO)3(3-propyi-1 ,4-cyclohexadiene);
Ru(CO)3(I -propyl-1 ,4-cyciohexadiene); Ru(CO)3(3-propyl-1 ,4-cyclohexadiene);
Os(CO)3(1 ,3-cyclohexadiene);
Os(CO)3(1 ,4-cyclohexadiene);
Os(CO)3(I -methyl-1 ,3-cyclohexadiene);
Os(CO)3(2-methyl-1 ,3-cyclohexadiene); Os(CO)3(5-methyl,1 ,3-cyclohexadiene);
Os(CO)3(I -ethyl-1 ,3-cyclohexadiene);
Os(CO)3(2-ethyl-1 ,3-cyclohexadiene);
Os(CO)3(5~ethyl,1 ,3-cyclohexadiene);
Os(CO)3(I -propyi-1 , 3-cyclohexadiene); Os(CO)3(2-propy!-1 ,3-cyclohexadiene);
Os(CO)3(5-propyl,1 , 3-cyclohexadiene);
Os(CO)3(I -butyl-1 ,3-cyclohexadiene);
Os(CO)3(2-butyl-1 ,3-cyciohexadiene); Os(CO)3(5-buty!,1 ,3-cyc!ohexadiene); Os(CO)3(I -methyi-1 ,4-cyclohexadiene); Os(CO)3(3-methyl-1 ,4-cyclohexadiene); Os(CO)3(I -ethyl-1 ,4-cyclohexadiene);
Os(CO)3(3-ethyl-1 ,4-cyclohexadiene); Os(CO)3(I -propyl- 1 ,4-cyclohexadiene); Os(CO)3(3-propyl-1 ,4-cyclohexadiene); Os(CO)3(I -propyl-1 ,4-cyclohexadiene); and Os{ CO )3(3-propyl-1 ,4-cyclohexadiene); and
- the metal precursor is composition is Ru(CO)3(I -methyl- 1 ,4- cyclohexadiene).
The foregoing has outlined rather broadly the features and technica! advantages of the present invention in order that the detailed description of the invention that follows may be better understood. Additional features and advantages of the invention will be described hereinafter that form the subject of the claims of the invention. It should be appreciated by those skilled in the art that the conception and the specific embodiments disclosed may be readiiy utilized as a basis for modifying or designing other structures for carrying out the same purposes of the present invention. It should also be realized by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the invention as set forth in the appended claims.
DESCRIPTION OF PREFERRED EMBODIMENTS
The current invention provides novel methods and compositions for the synthesis of a metal precursor composition. In general, the disclosed methods are utilized for the synthesis of ruthenium or osmium precursors.
In an embodiment, a method for synthesizing a metal precursor comprises reacting a metal trichloride with carbon monoxide to form a metallic complex, according to the general formula:
MCI3 + CO -> [MCI2(CO)3J2 (I).
The resulting metailic complex from reaction (!) is then reacted with a ligand to form a metal precursor comprising a metal carbonyl complex, according to the general formula:
[MCi2(CO)3J2 + L ^ LxM(CO)y (II). In reaction (i) and (II): M is ruthenium or osmium; L is one of η4- cyclobutadiene, acyclic diene, ηe-arene, η2-a!kene, η2-alkine, and terminal carbine; x is between 1 and 4 (such that 1 < x < 4); and y is between 1 and 5
(such that 1 < y < 5).
This synthesis method may be generally performed at temperatures lower than 160 C, and at pressures near atmospheric, which allows for easy commercialization of this method (as opposed to synthesis methods utilizing
M3(CO)-I2, which require higher pressures and temperatures.
In some embodiments, the starting material (i.e. metal trichloride) may be in the form of a metal trichlorate hydrate. !n some embodiments, both reactions are performed in a solvent, which may be commerciaily available grade of toluene, xylene, mestiylene, or ethyl digol. In some embodiments, no pretreatment of the solvent is required for purification purposes. in some embodiments, both reaction (I) and (II) are performed at a temperature of less than about 160 C, while in other embodiments reaction (I) is performed at about 150 C, and in other embodiments reaction (Ii) is independently performed at a temperature between room temperature and about 150 C.
In some embodiments, halides may be formed in an intermediary reaction. These may be removed through the introduction of a removal agent such as sodium carbonate (Na2CO3), potassium carbonate (K2CO3), copper or zinc. Removal of the halide may not be stoichiometric, so the addition of the removal agent the may be in excess.
EXAMPLES The following non-limiting examples are provided to further illustrate embodiments of the invention. However, the examples are not intended to
be ali inciusive and are not intended to limit the scope of the inventions described herein.
Example 1 : Preparation of Tricarbonyl dichlororuthenϊum(ll) dimmer, [RuCI2(CO)3I2
Ruthenium trichloride, RuCl3, (1 Og) was suspended in ethyl digol (200ml) under CO, and the suspension was heated to 150C until the solution turned to paie yellow. This is a liquid-gas reaction and bubbling of CO gas gave better results than simple refiuxing under CO, although simple refluxing is also acceptable. When the temperature was increased over 16OC, metal ruthenium was separated out on the walls of the flask. Solvent was removed under reduced pressure and dried. Yellow solid [RuCI2(CO)3J2 was obtained.
Example 2: Preparation of (1-methyl-1 ,4-cyclohexadiene)ruthenium tricarbonyl
Tricarbonyl dichlororuthenium(ll) dimmer was mixed with 1-methyl- 1 ,4-cyclohexadiene and Cu/Zn in toluene, xylene, and/or mesitylene. When Cu/Zn as haϋde remover was not used, Ru-Cl bond could be cut by heating.
After the reaction, solvent was removed in vacuo. Yellow liquid was obtained containing Ru(CO)3(I -methyl- 1 ,4-cyclohexadiene).
While embodiments of this invention have been shown and described, modifications thereof can be made by one skilled in the art without departing
from the spirit or teaching of this invention. The embodiments described herein are exemplary only and not limiting. Many variations and modifications of the composition and method are possible and within the scope of the invention. Accordingly the scope of protection is not limited to the embodiments described herein, but is only limited by the claims which follow, the scope of which shall include ail equivalents of the subject matter of the claims.
Claims
1. A method of synthesizing a metal precursor composition, the method comprising: a) reacting a metal trichloride with carbon monoxide to form a metallic complex, according to the general formula:
MCI3 + CO -* [MCi2(CO)3J2 (I); and b) reacting the resultant metallic complex from reaction (I) with a iigand to form a metal precursor comprising a metal carbonyl complex, according to the general formula:
[MCI2(CO)3J2 + L ^ LxM(C0)y (II); wherein
- M is ruthenium or osmium;
- L is at least one neutral Iigand selected from the group consisting of η4-cyclobutadiene, acyclic diene, ηδ-arene, η2-alkene, η2-alkine, and terminal carbine;
- x is between 1 and 4 (1 < x < 4); and
- y is between 1 and 5 (1 < y < 5).
2. The method of claim 1 , wherein the metal trichloride in reaction (I) is a hydrate.
3. The method of claim 1 , further comprising performing reaction (I) and reaction (II) in a solvent, wherein the solvent has a boiling point between 100 C and 200 C.
4. The method of claim 3, wherein the solvent comprises at least one member selected from the group consisting of: toluene; xylene; mesitylene; and ethyl digo! (2-(2'-methoxyethoxy)ethanol).
5. The method of claim 1 , further comprising performing reaction (I) and reaction (II) at a pressure between about 50 Pa and about 250 Pa.
6. The method of claim 5, further comprising performing reaction (I) and reaction (II) at about atmospheric pressure.
7. The method of claim 1 , further comprising performing reaction (I) and reaction (il) at a temperature iess than about 160 C.
8. The method of claim 7, further comprising performing reaction (I) and reaction (Ii) at a temperature between about room temperature and about 150 C.
9. The method of claim 7, further comprising performing reaction (t) at a temperature of about 150 C.
10. The method of claim 1 , further comprising removing at least part of a halide present in reaction (II).
11. The method of claim 101 further comprising removing the halide by adding one of sodium carbonate, potassium carbonate, copper, zinc, or mixtures thereof to reaction (Ii).
12. The method of claim 1 , wherein the metal precursor comprises at least one member selected from the group consisting of:
Ru(CO)3(1 ,3-cyciohexadiene);
Ru(CO)3(1 ,4-cyclohexadiene); Ru(CO)3(I -methyl-1 ,3-cyclohexadiene);
Ru(CO)3(2-methyl-1 ,3-cyclohexadiene);
Ru(CO)3(5-methyl,1 ,3-cyclohexadiene);
Ru(CO)3(I -ethyl-1 ,3-cyciohexadiene);
Ru(CO)3(2-ethyl-1 ,3-cyclohexadiene); Ru(CO)3(5-ethy!,1 ,3-cyciohexadiene);
Ru(CO)3(I -propyl-1 ,3-cyciohexadiene);
Ru(CO)3(2-propyl-1 ,3-cyclohexadiene); Ru(CO)3(5-propyl,1 ,3-cyclohexadiene);
Ru(CO)3(I -butyl-1 ,3-cyclohexadiene);
Ru(CO)3(2-butyl-1 ,3-cyclohexadiene);
Ru{CO)3(5-butyl,1 ,3-cyclohexadiene); Ru(CO)3(I -methyl-1 ,4-cyc!ohexadiene);
Ru(CO)3(3-methyl-1 ,4-cyc!ohexadiene);
Ru(CO)3(I -ethyl-1 ,4-cyclohexadiene);
Ru(CO)3(3-ethyl-1 ,4-cyclohexadiene);
Ru(CO)3(I -propyl- 1 ,4-cyclohexadiene); Ru(CO)3(3-propyl-1 ,4-cyclohexadiene);
Ru(CO)3(I -propyl- 1 ,4-cyclohexadiene); and
Ru(CO)3(3-propyl-1 ,4-cyclohexadiene).
13. The method of claim 12, wherein the metal precursor is Ru(CO)3(I- methyl- 1 ,4-cyclohexadiene).
14. The method of claim 1 , wherein the metal precursor comprises at least one member selected from the group consisting of:
Os(CO)3(1 ,3-cyc!ohexadiene); Os(CO)3(1 ,4-cyclohexadiene);
Os(CO)3(1 -methyl-1 ,3-cyclohexadiene);
Os(CO)3(2-methyl-1 ,3-cyclohexadiene);
Os(CO)3(5-methylJ1 ,3-cyc[ohexadiene);
Os(CO)3(I -ethyi-1 ,3-cyclohexadiene); Os(CO)3(2-ethy!-1 ,3-cyclohexadiene);
Os(CO)3(5-ethyl,1 ,3-cyc!ohexadiene);
Os(CO)3(I -propyl-1 ,3-cyclohexadiene);
Os(CO)3(2-propyl-1 ,3-cyciohexadiene);
Os(CO)3(5-propyl,1 ,3-cyclohexadiene); Os(CO)3(I -butyl-1 ,3-cyciohexadieπe);
Os(CO)3(2-butyl-1 ,3-cyclohexadiene);
Os(CO)3(5-butyi,1 ,3-cyclohexadiene); Os(CO)3(I -methyi-1 ,4-cydohexadiene);
Os(CO)3(3-methyS-1 ,4-cyclohexadiene);
Os(CO)3(1-ethyl-1 l4-cyclohexadiene);
Os(CO)3(3-ethyi-1 ,4-cyciohexadiene);
Os(CO)3(1-propyl-1 ,4-cyck)hexadiene);
Os(CO)3(3-propyl-1 ,4-cyc[ohexadiene);
Os(CO)3(I -propyl-1 ,4-cycIohexadiene); and
Os(CO)3(3-propyl-1 ,4-cyclohexadiene).
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| CN107033191A (en) * | 2017-06-20 | 2017-08-11 | 陕西师范大学 | Ruthenium carbon monoxide-releasing molecules CORM 2 safe synthetic method |
| CN107033191B (en) * | 2017-06-20 | 2019-12-03 | 陕西师范大学 | The safe synthetic method of ruthenium carbon monoxide-releasing molecules CORM-2 |
| JP2021502492A (en) * | 2017-11-01 | 2021-01-28 | ディーエヌエフ シーオー．， エルティーディー．Ｄｎｆ Ｃｏ．， Ｌｔｄ． | A method for producing a ruthenium-containing thin film and a ruthenium-containing thin film produced thereby. |
| JP7355746B2 (en) | 2017-11-01 | 2023-10-03 | ディーエヌエフ シーオー．， エルティーディー． | Method for producing a ruthenium-containing thin film and a ruthenium-containing thin film produced thereby |
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| WO2009057064A3 (en) | 2009-07-02 |
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