JP7322158B2 - 3次元メモリデバイスおよびその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title description 31
- 239000000463 material Substances 0.000 claims description 86
- 230000000903 blocking effect Effects 0.000 claims description 62
- 239000004065 semiconductor Substances 0.000 claims description 44
- 230000005641 tunneling Effects 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 29
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 357
- 238000000034 method Methods 0.000 description 63
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- 238000010586 diagram Methods 0.000 description 27
- 238000005530 etching Methods 0.000 description 23
- 239000011810 insulating material Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000013459 approach Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
12 第1の犠牲層
14 第2の犠牲層
16 第1の封鎖層
18 第2の封鎖層
20 エピタキシャル層
22 ブロッキング層
22A 第1のブロッキングセクション
22B 第2のブロッキングセクション
24 トラッピング層
24A 第1のトラッピングセクション
24B 第2のトラッピングセクション
26 トンネリング層
28 半導体層
30 充填層
32 第1の空隙
34 導電性構造体
36 ドープ領域
38 第1の絶縁材料
38A 絶縁層
40 第2の空隙
42 第1の酸化物領域
44 第2の酸化物領域
50 ゲート材料
50G ゲート材料層
52 ゲート誘電体層
54 バリア層
56 金属層
60 第2の絶縁材料
70 スリット構造体
100 3Dメモリデバイス
D1 垂直方向
D2 水平方向
H1 第1の開口部
H2 第2の開口部
H3 第3の開口部
H4 第4の開口部
L1 第1のトラッピングセクション24Aの長さ
L2 第1のブロッキングセクション22Aの長さ
L3 ゲート材料層50Gの長さ
ST1 交互の犠牲スタック
ST2 交互誘電体/ゲート材料スタック
VS 垂直構造体
Claims (10)
- 基板と、
前記基板の上に配設されている絶縁層と、
前記基板の上に配設されているゲート材料層であって、前記絶縁層および前記ゲート材料層は、垂直方向に交互に積層されている、ゲート材料層と、
前記垂直方向に前記ゲート材料層を貫通する垂直構造体であって、前記垂直構造体は、
前記垂直方向に細長くなっている半導体層、
水平方向に前記半導体層を取り囲むトラッピング層であって、前記トラッピング層が、前記垂直方向に整合させられ、互いに分離された複数のトラッピングセクションを含み、前記垂直方向における前記トラッピングセクションのそれぞれの長さが、前記垂直方向における前記ゲート材料層のそれぞれの長さより小さい、トラッピング層、
前記半導体層と前記トラッピング層との間に配設されるトンネリング層、および、
前記絶縁層のうちの少なくとも1つに配設されている空隙であって、前記空隙が、前記垂直方向に互いに隣接する前記ゲート材料層のうちの2つの間に位置し、前記空隙が、前記絶縁層の少なくとも1つの一部によって前記トンネリング層から分離される、空隙、
を含む、垂直構造体と、
を備え、
前記トラッピングセクションが第1のトラッピングセクション及び第2のトラッピングセクションを含み、
前記第1のトラッピングセクションが前記垂直方向に前記第2のトラッピングセクションの上方に配設され、
前記第2のトラッピングセクションが前記第1のトラッピングセクションのそれぞれから分離され、
前記絶縁層の1つが、前記垂直方向に前記トンネリング層の下に完全に配設される前記第2のトラッピングセクション、及び前記第1のトラッピングセクションの1つと直接的に接続される、3次元(3D)メモリデバイス。 - 前記トラッピングセクションのうちの1つは、前記水平方向に前記半導体層と前記ゲート材料層のうちの1つとの間に位置する、請求項1に記載の3Dメモリデバイス。
- 前記絶縁層のうちの1つは、前記垂直方向に互いに隣接する前記トラッピングセクションのうちの2つの間に部分的に位置する、請求項1に記載の3Dメモリデバイス。
- 前記垂直構造体は、前記水平方向に前記トラッピング層および前記半導体層を取り囲むブロッキング層をさらに含み、前記ブロッキング層は、前記垂直方向に整合させられ、互いに分離されているブロッキングセクションを含む、請求項1に記載の3Dメモリデバイス。
- 前記ブロッキングセクションのうちの1つは、前記水平方向に前記トラッピングセクションのうちの1つと前記ゲート材料層のうちの1つとの間に配設されている、請求項4に記載の3Dメモリデバイス。
- 前記垂直方向は、前記水平方向と直交する、請求項1に記載の3Dメモリデバイス。
- 前記絶縁層のそれぞれが、酸化物、窒化物または酸窒化物である、請求項1に記載の3Dメモリデバイス。
- 前記半導体層が前記垂直方向に前記第2のトラッピングセクションを貫通し、
前記第2のトラッピングセクションの全体が、前記垂直方向に前記トンネリング層の下に完全に配設され、
前記垂直方向に前記トンネリング層の下に完全に配設された前記第2のトラッピングセクションに直接的に接続された前記絶縁層の1つの材料組成が、前記第1のトラッピングセクションの1つに直接的に接続された前記絶縁層の1つの材料組成と同一である、
請求項1に記載の3Dメモリデバイス。 - 前記垂直方向に前記トンネリング層の下に完全に配設される前記第2のトラッピングセクション、及び前記第1のトラッピングセクションの1つと直接的に接続される前記絶縁層の1つが、前記垂直方向に前記第1のトラッピングセクションの下に完全に配設される、請求項8に記載の3Dメモリデバイス。
- 前記垂直方向に前記トンネリング層の下に完全に配設される前記第2のトラッピングセクションと直接的に接続される前記絶縁層の1つ、及び前記第1のトラッピングセクションの1つと直接的に接続される前記絶縁層の1つが、互いに直接的に接続される、請求項8に記載の3Dメモリデバイス。
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PCT/CN2019/106881 WO2021051371A1 (en) | 2019-09-20 | 2019-09-20 | Three-dimensional memory device and manufacturing method thereof |
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JP2022519875A JP2022519875A (ja) | 2022-03-25 |
JP7322158B2 true JP7322158B2 (ja) | 2023-08-07 |
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US (2) | US11751389B2 (ja) |
EP (1) | EP3895214B1 (ja) |
JP (1) | JP7322158B2 (ja) |
KR (1) | KR20210102983A (ja) |
CN (2) | CN110785844B (ja) |
TW (1) | TWI707461B (ja) |
WO (1) | WO2021051371A1 (ja) |
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CN112768461B (zh) | 2023-10-20 |
TW202114173A (zh) | 2021-04-01 |
US11751389B2 (en) | 2023-09-05 |
JP2022519875A (ja) | 2022-03-25 |
TWI707461B (zh) | 2020-10-11 |
US20220093641A1 (en) | 2022-03-24 |
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