JP7307454B2 - ペロブスカイト量子ドット発光デバイスおよびその製造方法 - Google Patents

ペロブスカイト量子ドット発光デバイスおよびその製造方法 Download PDF

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JP7307454B2
JP7307454B2 JP2019062462A JP2019062462A JP7307454B2 JP 7307454 B2 JP7307454 B2 JP 7307454B2 JP 2019062462 A JP2019062462 A JP 2019062462A JP 2019062462 A JP2019062462 A JP 2019062462A JP 7307454 B2 JP7307454 B2 JP 7307454B2
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perovskite quantum
quantum dot
ligand
long
film
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JP2020161442A (ja
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淳二 城戸
貴之 千葉
日南子 江部
純 佐藤
佳人 高橋
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Yamagata University NUC
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JP2019062462A 2019-03-28 2019-03-28 ペロブスカイト量子ドット発光デバイスおよびその製造方法 Active JP7307454B2 (ja)

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Publication number Priority date Publication date Assignee Title
JP2022050363A (ja) * 2020-09-17 2022-03-30 国立大学法人 東京大学 量子ドット、量子ドットの製造方法、及び量子ドットの使用
JP7679185B2 (ja) 2020-09-25 2025-05-19 キヤノン株式会社 有機化合物及び有機発光素子
US20240164128A1 (en) * 2021-03-09 2024-05-16 Sharp Kabushiki Kaisha Method for patterning nanoparticle film, method for manufacturing light-emitting device, and light-emitting device
US20240147839A1 (en) * 2021-03-09 2024-05-02 Sharp Kabushiki Kaisha Light-emitting element and production method therefor
WO2022190191A1 (ja) * 2021-03-09 2022-09-15 シャープ株式会社 量子ドット含有膜、発光素子、波長変換部材、表示装置
US20240147826A1 (en) * 2021-03-09 2024-05-02 Sharp Kabushiki Kaisha Method for manufacturing el element, and el element
WO2022215150A1 (ja) * 2021-04-06 2022-10-13 シャープ株式会社 表示装置及び表示装置の製造方法
WO2022252088A1 (zh) * 2021-05-31 2022-12-08 京东方科技集团股份有限公司 量子点材料及其制备方法、量子点显示器件、显示装置
CN113258014A (zh) * 2021-06-24 2021-08-13 深圳技术大学 一种倒置结构钙钛矿量子点发光二极管及其制备方法
US20240237508A1 (en) * 2021-09-24 2024-07-11 Beijing Boe Technology Development Co., Ltd. Quantum dot film layers, quantum dot light emitting devices and manufacturing methods therefor
US12588406B2 (en) * 2021-09-29 2026-03-24 Beijing Boe Technology Development Co., Ltd. Quantum dot ligand, quantum dot-ligand system and quantum dot material
CN113943575B (zh) * 2021-10-11 2023-04-14 西安石油大学 一种荧光峰峰位可调的全无机铯铅溴钙钛矿纳米晶的制备方法
KR102820908B1 (ko) 2021-11-30 2025-06-13 한국화학연구원 페로브스카이트 양자점의 표면개질 방법 및 표면개질된 페로브스카이트 양자점
KR102933785B1 (ko) * 2023-06-12 2026-03-03 한국화학연구원 안정성이 향상된 적색 페로브스카이트 양자점의 제조방법, 그에 의해 제조되는 적색 페로브스카이트 양자점 및 이를 포함하는 발광소자
CN117551453A (zh) * 2023-11-10 2024-02-13 闽都创新实验室 基于交换树脂对钙钛矿量子点进行金属离子掺杂的方法
KR102920593B1 (ko) 2024-01-11 2026-01-29 한국화학연구원 유무기 복합 화합물을 이용한 적색 페로브스카이트 나노 결정의 제조방법, 그에 의해 제조되는 적색 페로브스카이트 나노 결정 및 이를 포함하는 발광소자
JP2025113915A (ja) * 2024-01-23 2025-08-04 国立大学法人金沢大学 ペロブスカイト膜、薄膜太陽電池、ペロブスカイト膜の製造方法及び薄膜太陽電池の製造方法

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JP2017536697A (ja) 2014-11-06 2017-12-07 ポステック アカデミー−インダストリー ファウンデーション ペロブスカイト発光素子用の発光層及びその製造方法とこれを利用したペロブスカイト発光素子
CN109935710A (zh) 2017-12-15 2019-06-25 Tcl集团股份有限公司 反型qled器件及其制备方法
JP2020045440A (ja) 2018-09-20 2020-03-26 東洋インキＳｃホールディングス株式会社 半導体微粒子組成物、該組成物を用いてなる塗工液、インキ組成物、及びインクジェットインキ、塗工物、印刷物、波長変換フィルム、カラーフィルター、発光素子
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JP2017536697A (ja) 2014-11-06 2017-12-07 ポステック アカデミー−インダストリー ファウンデーション ペロブスカイト発光素子用の発光層及びその製造方法とこれを利用したペロブスカイト発光素子
US20200343489A1 (en) 2016-11-29 2020-10-29 Unist (Ulsan National Institute Of Science And Technology) Quantum-dot light-emitting diode and method for producing quantum-dot light-emitting diode
CN109935710A (zh) 2017-12-15 2019-06-25 Tcl集团股份有限公司 反型qled器件及其制备方法
JP2020045440A (ja) 2018-09-20 2020-03-26 東洋インキＳｃホールディングス株式会社 半導体微粒子組成物、該組成物を用いてなる塗工液、インキ組成物、及びインクジェットインキ、塗工物、印刷物、波長変換フィルム、カラーフィルター、発光素子

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Hanleem LEE et al.，Design of Chemically Stable Organic Perovskite Quantum Dots for Micropatterned Light‐Emitting Diodes through Kinetic Control of a Cross‐Linkable Ligand System，Advanced Materials，2021年05月03日，Vol. 33，No. 23，p.2007855，10.1002/adma.202007855

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