WO2022252088A1 - 量子点材料及其制备方法、量子点显示器件、显示装置 - Google Patents

量子点材料及其制备方法、量子点显示器件、显示装置 Download PDF

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WO2022252088A1
WO2022252088A1 PCT/CN2021/097504 CN2021097504W WO2022252088A1 WO 2022252088 A1 WO2022252088 A1 WO 2022252088A1 CN 2021097504 W CN2021097504 W CN 2021097504W WO 2022252088 A1 WO2022252088 A1 WO 2022252088A1
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ligand
quantum dot
chain
short
group
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PCT/CN2021/097504
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English (en)
French (fr)
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梅文海
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京东方科技集团股份有限公司
北京京东方技术开发有限公司
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Priority to PCT/CN2021/097504 priority Critical patent/WO2022252088A1/zh
Priority to CN202180001388.5A priority patent/CN115701315A/zh
Priority to US17/771,500 priority patent/US20240172463A1/en
Publication of WO2022252088A1 publication Critical patent/WO2022252088A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source

Definitions

  • Embodiments of the present disclosure relate to, but are not limited to, the field of preparation of quantum dot devices, and specifically relate to a quantum dot material and a preparation method thereof, a quantum dot display device containing the quantum dot material, and a display device containing the quantum dot display device.
  • Quantum Dots Light Emitting Diode Display is a new type of display technology developed on the basis of organic light emitting displays.
  • the light-emitting layer in QLED is a quantum dot layer, and its principle is that electrons and holes are injected into the quantum dot layer and recombine and emit light in the quantum dot layer.
  • QLED Compared with Organic Light Emitting Diode Display (OLED Display), QLED has the advantages of narrow luminous peak, high color saturation and wide color gamut.
  • quantum dot display technology With the in-depth development of quantum dot display technology, the quantum efficiency has been continuously improved and has basically reached the level of industrialization. It has become a future trend to further adopt new processes and technologies to realize its industrialization.
  • the use of quantum dots for patterning to prepare high-resolution QLEDs, QD-LCDs (Quantum Dots-Liquid Crystal Displays) and QD-OLEDs (Quantum Dots-Organic Light Emitting Diode Displays) has become an important topic.
  • the current quantum In the process of patterning dots it is easy to form residues after the development process, which can easily cause color mixing problems in full-color quantum dot displays.
  • An embodiment of the present disclosure provides a quantum dot material, and the quantum dot material includes:
  • the carbon chain length of the primary ligand A" is the length of the secondary ligand B " 1.3 to 4.5 times the carbon chain length.
  • An embodiment of the present disclosure also provides a method for preparing the quantum dot material as described above, including:
  • S2 The quantum dot surface coated with short-chain ligand A and short-chain ligand B obtained in S1.
  • the surface-coated short-chain ligand A and short-chain ligand B are photocoupled with compound A' and compound B', respectively. branch reaction to form quantum dots whose surface is coated with primary ligand A" and secondary ligand B", and make the carbon chain length of the primary ligand A" equal to the carbon chain length of the secondary ligand B" 1.3 to 4.5 times the length; optionally, at least one of the compound A' and the compound B' contains a polar group.
  • An embodiment of the present disclosure provides a quantum dot material, and the quantum dot material includes:
  • An embodiment of the present disclosure also provides a method for preparing the quantum dot material as described above, including:
  • S2 The quantum dot surface coated with short-chain ligand A and short-chain ligand B obtained in S1.
  • the surface-coated short-chain ligand A and short-chain ligand B are photocoupled with compound A' and compound B', respectively. branch reaction to form a quantum dot whose surface is coated with a primary ligand A" and a secondary ligand B"; at least one of the compound A' and the compound B' contains a polar group.
  • An embodiment of the present disclosure also provides a quantum dot display device, the quantum dot display device includes the quantum dot material as described above.
  • An embodiment of the present disclosure also provides a display device, including a plurality of quantum dot display devices as described above.
  • Figure 1 is a schematic diagram of the change in ligand coverage of quantum dots containing only primary ligand A" before and after development;
  • Figure 2 is a schematic diagram of the change in ligand coverage of quantum dots containing both primary ligand A" and secondary ligand B" before and after development;
  • Fig. 4 is the chemical reaction flow chart of embodiment 1 of the present disclosure.
  • Figure 5 is a flow chart of the preparation of full-color QLED
  • Fig. 6 is the chemical reaction flow chart of embodiment 2 of the present disclosure.
  • Fig. 7 is the chemical reaction flow chart of embodiment 3 of the present disclosure.
  • the ligands used on the surface of quantum dots are mostly long-chain ligands, with at least 8 or more carbon atoms.
  • the long-chain ligands are beneficial to increase the dispersion of quantum dots in the solution and play a role in stabilizing quantum dot particles.
  • most of the long-chain ligands are aliphatic chains, which are prone to entanglement and bending in areas far away from the coordination point, and produce steric hindrance at the periphery of the quantum dots, preventing other long-chain ligands from moving further to the surface of the quantum dots for coordination. bit.
  • An embodiment of the present disclosure provides a quantum dot material, the quantum dot material includes: a quantum dot body and a primary ligand A" and a secondary ligand B" coated on the surface of the quantum dot body, the primary The carbon chain length of the ligand A" is 1.3 to 4.5 times the carbon chain length of the secondary ligand B".
  • the surface of the quantum dot body is coated with primary ligands A" and secondary ligands B" of different lengths, the primary ligand A" has a longer carbon chain, and the secondary ligand The carbon chain of B" is shorter; the simultaneous presence of the primary ligand A" and the secondary ligand B” makes the ligand coverage on the surface of the quantum dots high, and the solubility of the quantum dots in the solvent is better, and the Even if some of the ligands fall off during the process, the quantum dots as a whole can still maintain a high ligand coverage, so that the quantum dots maintain good solubility and are easy to be completely washed off during the developing process.
  • Figure 1 is a schematic diagram of the ligand coverage change of quantum dots (Quantum Dot, QD) containing only primary ligand A" before and after development.
  • Ligand shedding leads to a decrease in ligand coverage on the surface of quantum dots, which in turn leads to dissolution of quantum dots sex decline.
  • Fig. 2 is a schematic diagram of the change in ligand coverage of quantum dots containing both primary ligand A" and secondary ligand B" before and after development. After part of the ligands fell off, the surface of the quantum dots still had a high ligand coverage.
  • the carbon chain length of the primary ligand A" may be 8-18, and the carbon chain length of the secondary ligand B" may be 4-6.
  • the number of carbon atoms (including carbon atoms on the main chain and branch chains) of the secondary ligand B" does not exceed the number of carbon atoms (including carbon atoms on the main chain) of the primary ligand A " and carbon atoms on the branch chain) half of the number; at this time, the quantum dot surface can have a higher ligand coverage.
  • the primary ligand A" can be an aromatic hydrocarbon ligand or an aliphatic hydrocarbon ligand
  • the secondary ligand B" can be an aliphatic hydrocarbon ligand, which can avoid the formation of larger sites Resistance.
  • the primary ligand A" may be a straight-chain aliphatic hydrocarbon ligand with a number of carbon atoms ranging from 8 to 18; or, the primary ligand A" may be a branched-chain
  • the aliphatic hydrocarbon ligand, the number of carbon atoms in the branched chain is in the range of 1 to 6 or the range of 8 to 18;
  • the secondary ligand B" can be a straight chain aliphatic hydrocarbon ligand, and the number of carbon atoms is in the range of 4 to 18 6; or, the secondary ligand B" is an aliphatic hydrocarbon ligand containing a branched chain, the number of carbon atoms in the branched chain is within the range of 1 to 2 or 4 to 6, and the number of branched chains is is 1.
  • the solubility and the transport property of the quantum dots are good.
  • neither the primary ligand A" nor the secondary ligand B" contains large steric hindering groups, and the large steric hindering groups include phenyl groups, triphenylamine groups or Carbazole group.
  • At least one of the primary ligand A" and the secondary ligand B" may contain a polar group.
  • the force between the non-polar aliphatic chain and the non-polar solvent is very weak, which is not conducive to the dispersion and dissolution of the quantum dots in the non-polar solvent, so that the overall solubility of the quantum dots is not high, resulting in the direct photolithography method.
  • the development of quantum dots often has residues that cannot be completely cleaned.
  • polar groups are introduced into the ligand chain, which improves the solubility of the quantum material in polar solvents, and facilitates complete removal during development.
  • the polar group may be selected from any one or more of amide groups, ether groups, carbonyl groups and ester groups.
  • the polarity of the primary ligand A" is similar to that of the secondary ligand B", which can improve the solubility of quantum dots, avoid the formation of residual quantum dots after the development process, and avoid full-color Color mixing issues in quantum dot displays.
  • the primary ligand A" and the secondary ligand B" may contain polarities of the same polarity level (both strong polarity, medium polarity or weak polarity) groups, and the number of polar groups is about the same, which can make the polarity of the primary ligand A" and the secondary ligand B" similar.
  • the primary ligand A" contains hydrophilic groups such as amide groups, ether groups, carbonyl groups, ester groups, etc.
  • the secondary ligand B" also contains amide groups, ether groups, carbonyl groups, Hydrophilic groups such as ester groups.
  • the ligand can be a straight-chain aliphatic hydrocarbon ligand, whose general formula is as follows:
  • the ligand can be an aliphatic ligand containing branched chains, the general formula of which is as follows:
  • R 1 can be a thioether group, an alcohol amino group, an ether group, an amido group or an epoxy group;
  • R2 can be an amide group, an ether group, a carbonyl group or an ester group.
  • the primary ligand A" can be
  • the secondary ligand B" can be:
  • the primary ligand A" can be
  • the secondary ligand B" can be
  • the primary ligand A" can be
  • the secondary ligand B" can be
  • the primary ligand A" can be
  • the secondary ligand B" can be
  • the molar ratio of the primary ligand A" to the secondary ligand B" may range from 1:10 to 10:1, for example, 10:1, 9:1, 8 :1, 7:1, 6:1, 5:1, 4:1, 3:1, 2:1, 1:1, 1:2, 1:3, 1:4, 1:5, 1:6 , 1:7, 1:8, 1:9, 1:10; at this time, the steric hindrance can be better reduced and the ligand coverage on the quantum dot surface can be improved.
  • An embodiment of the present disclosure also provides a method for preparing the quantum dot material as described above, including:
  • the molar ratio of the short-chain ligand A to the short-chain ligand B may range from 10:1 to 1:10, for example, 10:1, 9:1, 8:1 , 7:1, 6:1, 5:1, 4:1, 3:1, 2:1, 1:1, 1:2, 1:3, 1:4, 1:5, 1:6, 1 :7, 1:8, 1:9, 1:10.
  • the carbon chain length of the compound A' may be 2-16, and the carbon chain length of the compound B' may be 2-4.
  • the molar ratio of the compound A' to the short-chain ligand A may be 1.2:1, and the molar ratio of the compound B' to the short-chain ligand B may be 1.2: 1.
  • the short-chain ligand A and short-chain ligand B coated on the surface of the quantum dot obtained in S1 can be completely reacted.
  • the group contained in the compound A' that can undergo photografting reaction with the short-chain ligand A and the group contained in the compound B' that can react with the short-chain ligand B The groups that undergo photografting reactions are different; it can be ensured that in the photografting reaction, compound A' only reacts with short-chain ligand A but not with short-chain ligand B, while compound B' only reacts with short-chain ligands Ligand B reacts but not with short-chain ligand A.
  • the ends of the short-chain ligand A and the short-chain ligand B may contain hydrophilic groups, so that the primary ligand A" and the secondary ligand B" are hydrophilic Sexual groups, while the polarity of hydrophilic groups is generally larger, so that the solubility and stability of quantum dots in hydrophilic solvents are better.
  • the hydrophilic group may be carboxyl, amino, hydroxyl, aldehyde or carbonyl.
  • the short-chain ligand A may be:
  • the short-chain ligand B can be:
  • the short-chain ligand A can be
  • the short-chain ligand B can be
  • the short-chain ligand A can be
  • the short-chain ligand B can be
  • the short-chain ligand A can be
  • the short-chain ligand B can be
  • the group contained in the compound A' that can undergo photografting reaction with the short-chain ligand A is a carbonyl group, an ether group or an amide group
  • the group contained in the compound B' that can react with the short-chain ligand A is a carbonyl group, an ether group or an amide group.
  • the compound A' can be:
  • the compound B' can be:
  • the compound A' can be
  • the compound B' can be
  • the compound A' can be
  • the compound B' can be
  • the compound A' can be
  • the compound B' can be
  • An embodiment of the present disclosure also provides a quantum dot material, and the quantum dot material includes:
  • the polarity of the primary ligand A" is similar to that of the secondary ligand B".
  • the polar group may be selected from any one or more of amide groups, ether groups, carbonyl groups and ester groups.
  • An embodiment of the present disclosure also provides a method for preparing the quantum dot material as described above, including:
  • S2 The quantum dot surface coated with short-chain ligand A and short-chain ligand B obtained in S1.
  • the surface-coated short-chain ligand A and short-chain ligand B are photocoupled with compound A' and compound B', respectively. branch reaction to form quantum dots whose surface is coated with primary ligand A" and secondary ligand B"; at least one of the compound A' and the compound B' contains a polar group.
  • step S1 may include: using short-chain ligand A and short-chain ligand B with 3 to 5 carbon atoms to exchange the original ligand on the surface of the quantum dot containing the original ligand , so that the short-chain ligand A and the short-chain ligand B are coated on the surface of the quantum dots.
  • An embodiment of the present disclosure also provides a quantum dot display device, the quantum dot display device includes the quantum dot material as described above.
  • the quantum dot display device may include: an anode, a cathode, and a light-emitting layer disposed between the anode and the cathode, where the material of the light-emitting layer is the quantum dot material.
  • the quantum dot display device may be a QLED device, a QD-OLED device or a QD-LCD device.
  • the quantum dot display device is a quantum dot light-emitting device (QLED), including an anode, a cathode, and a quantum dot light-emitting layer arranged between the anode and the cathode, and the quantum dot
  • the light-emitting layer includes a quantum dot material as described above.
  • the quantum dot display device is a QD-OLED device or a QD-LCD device, and includes a color conversion layer, and the color conversion layer includes the quantum dot material as described above.
  • An embodiment of the present disclosure also provides a display device, including a plurality of the above-mentioned quantum dot display devices.
  • quantum dot material of the embodiments of the present disclosure its preparation method and its application in patterned QLED devices are illustrated below.
  • the surface is coated with short-chain ligand A and short-chain ligand B.
  • the quantum dot powder of the chain ligand B was redissolved in ethanol to form a quantum dot solution with a concentration of 20 mg/ml coated with the short-chain ligand A and the short-chain ligand B.
  • Fig. 4 is a flow chart of the chemical reaction of this embodiment
  • Fig. 5 is a flow chart of the preparation of a full-color QLED.
  • ITO indium Tin Oxide
  • the red light quantum dot solution covered with short-chain ligand A and short-chain ligand B forms a red light quantum dot (RQD) film layer 30; will contain PAG (2-(4-methoxystyryl)-4,6 - Bis(trichloromethyl)-1,3,5-triazine) compound A' and compound B'
  • FIG. 6 is a flow chart of the chemical reaction in this embodiment.
  • the red light quantum dots of the chain ligand B are dissolved to form a red light quantum dot (RQD) film layer 30; 1,3,5-triazine) compound A' and compound B'
  • the toluene solution is added dropwise on the quantum dot film layer, after exposure (energy 100mj), use chloroform to develop (120s), and after the development is completed, heat at 120 degrees for 10 minutes to form a patterned red light quantum dot film layer 30;
  • the patterned green quantum dot (GQD) film layer 40 and the patterned blue quantum dot (BQD) film layer 50 are prepared by the same process.
  • the hole transport layer 60 , the hole injection layer 70 and the metal electrode 80 (such as a silver electrode) are prepared by e
  • n A of short-chain ligand A and short-chain ligand B:n B 1:1 (in other embodiments can be in 1:10 to 10:1 range), stirring at room temperature for 4 hours to replace the original pyridine ligand with short-chain ligand A and short-chain ligand B for ligand exchange, and then coat the surface with short-chain ligands
  • the quantum dots of A and short-chain ligand B were precipitated with toluene, and after removing the supernatant, 0.5ml of ethanol was used to dissolve the quantum dots coated with short-chain ligand A and short-chain ligand B, and 3ml of toluene was used for precipitation.
  • FIG. 7 is a flow chart of the chemical reaction in this embodiment.
  • the red light quantum dot solution of the chain ligand B forms a red light quantum dot (RQD) film layer 30; 1,3,5-triazine) compound A' and compound B'
  • the toluene solution is added dropwise on the quantum dot film layer, after exposure (energy 100mj), use chloroform to develop (120s), and after the development is completed, heat at 120 degrees for 10 minutes to form a patterned red light quantum dot film layer 30;
  • the process method prepares a patterned green quantum dot (GQD) film layer 40 and a patterned blue quantum dot (BQD) film layer 50 .
  • the hole transport layer 60 , the hole injection layer 70 and the metal electrode 80 (such as a silver electrode) are prepared by e

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Abstract

提供一种量子点材料，所述量子点材料包括：量子点本体和包覆在所述量子点本体表面的一级配体A"和二级配体B"，所述一级配体A"的碳链长度是所述二级配体B"的碳链长度的1.3倍至4.5倍。

Description

量子点材料及其制备方法、量子点显示器件、显示装置 技术领域
本公开实施例涉及但不限于量子点器件的制备领域，具体涉及一种量子点材料及其制备方法、含有该量子点材料的量子点显示器件、含有量子点显示器件的显示装置。
背景技术
量子点发光二极管显示器(Quantum Dots Light Emitting Diode Display,QLED Display)是基于有机发光显示器的基础上发展起来的一种新型显示技术。QLED中的发光层为量子点层，它的原理是电子和空穴注入到量子点层后在量子点层中复合发光。与有机发光二极管显示器件(Organic Light Emitting Diode Display,OLED Display)相比，QLED具有发光峰窄、色彩饱和度高、色域宽等优点。
随着量子点显示技术的深入发展，量子效率不断提升，已基本达到产业化的水平，进一步采用新的工艺和技术来实现其产业化已成为未来的趋势。运用量子点进行图案化以制备高分辨率QLED、QD-LCD(Quantum Dots-Liquid Crystal Display)和QD-OLED(Quantum Dots-Organic Light Emitting Diode Display)已经成为一项重要的议题，但是，目前量子点进行图案化的工艺中很容易在显影过程后形成残留，容易造成全彩量子点显示中的混色问题。
发明内容
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
本公开实施例提供一种量子点材料，所述量子点材料包括：
量子点本体和包覆在所述量子点本体表面的一级配体A”和二级配体B”，所述一级配体A”的碳链长度是所述二级配体B”的碳链长度的1.3倍至4.5 倍。
本公开实施例还提供一种如上所述的量子点材料的制备方法，包括：
S1：使用碳原子个数均为3至5的短链配体A、短链配体B对量子点进行包覆；
S2：S1得到的表面包覆有短链配体A和短链配体B的量子点表面包覆的短链配体A、短链配体B分别与化合物A’和化合物B’进行光接枝反应，形成表面包覆有一级配体A”和二级配体B”的量子点，并使所述一级配体A”的碳链长度是所述二级配体B”的碳链长度的1.3倍至4.5倍；任选地，所述化合物A’和所述化合物B’中的至少一个含有极性基团。
本公开实施例提供一种量子点材料，所述量子点材料包括：
量子点本体和包覆在所述量子点本体表面的一级配体A”和二级配体B”，所述一级配体A”和所述二级配体B”中的至少一个含有极性基团。
本公开实施例还一种提供如上所述的量子点材料的制备方法，包括：
S1：使用碳原子个数均为3至5的短链配体A、短链配体B对量子点进行包覆；
S2：S1得到的表面包覆有短链配体A和短链配体B的量子点表面包覆的短链配体A、短链配体B分别与化合物A’和化合物B’进行光接枝反应，形成表面包覆有一级配体A”和二级配体B”的量子点；所述化合物A’和所述化合物B’中的至少一个含有极性基团。
本公开实施例还提供一种量子点显示器件，所述量子点显示器件包括如上所述的量子点材料。
本公开实施例还提供一种显示装置，包括多个如上所述的量子点显示器件。
在阅读并理解了附图和详细描述后，可以明白其他方面。
附图说明
附图用来提供对本公开技术方案的进一步理解，并且构成说明书的一部 分，与本公开的实施例一起用于解释本公开的技术方案，并不构成对本公开技术方案的限制。附图中部件的形状和大小不反映真实比例，目的只是示意说明本公开内容。
图1为只含有一级配体A”的量子点在显影前后的配体覆盖率变化示意图；
图2为同时含有一级配体A”和二级配体B”的量子点在显影前后的配体覆盖率变化示意图；
图3为本公开实施例的量子点制备方法的步骤S2的工艺流程图；
图4为本公开实施例1的化学反应流程图；
图5为全彩QLED的制备流程图；
图6为本公开实施例2的化学反应流程图；
图7为本公开实施例3的化学反应流程图；
附图中的标记符号的含义为：
10-基板；20-电子传输层；30-红光量子点膜层；30’-待去除的红光量子点膜层；40-绿色量子点膜层；40’-待去除的绿色量子点膜层；50-蓝色量子点膜层；50’-待去除的蓝色量子点膜层；60-空穴传输层；70-空穴注入层；80-金属电极。
具体实施方式
本领域的普通技术人员应当理解，可以对本公开实施例的技术方案进行修改或者等同替换，而不脱离本公开实施例技术方案的精神和范围，均应涵盖在本公开的权利要求范围当中。
在附图中，有时为了明确起见，夸大表示了构成要素的大小、层的厚度或区域。因此，本公开的实施方式并不一定限定于该尺寸，附图中每个部件的形状和大小不反映真实比例。此外，附图示意性地示出了一些例子，本公开的实施方式不局限于附图所示的形状或数值。
目前，量子点表面使用的配体多为长链配体，碳原子个数至少在8个及 以上。长链配体有利于增加量子点在溶液中的分散性，起到稳定量子点颗粒的作用。但是长链配体多为脂肪链，在远离配位点的区域容易发生缠绕、弯曲等现象，在量子点的外围产生位阻作用，阻挡了其它长链配体进一步运动至量子点表面进行配位。这种情况下虽然量子点表面有长链配体进行配位，但是由于位阻原因导致表面配体覆盖率较低，在显影工艺中若有部分配体脱落(如图1所示)，配体覆盖率将更低，导致量子点的溶解性下降，不利于量子点被去除。
本公开实施例提供一种量子点材料，所述量子点材料包括：量子点本体和包覆在所述量子点本体表面的一级配体A”和二级配体B”，所述一级配体A”的碳链长度是所述二级配体B”的碳链长度的1.3倍至4.5倍。
本公开实施例的量子点材料，量子点本体表面包覆有长短不一的一级配体A”和二级配体B”，一级配体A”的碳链较长，二级配体B”的碳链较短；一级配体A”和二级配体B”的同时存在，使得量子点表面的配体覆盖率高，量子点在溶剂中的溶解性较好，而且在显影过程中即使有部分配体脱落，量子点整体仍然能够维持较高的配体覆盖率，使量子点维持较好的溶解性，容易在显影过程中被彻底洗去。
图1为只含有一级配体A”的量子点(Quantum Dot,QD)在显影前后的配体覆盖率变化示意图。配体脱落导致量子点表面的配体覆盖率降低，进而导致量子点溶解性下降。
图2为同时含有一级配体A”和二级配体B”的量子点在显影前后的配体覆盖率变化示意图。部分配体脱落后，量子点表面仍有较高的配体覆盖率。
在一些示例性实施例中，所述一级配体A”的碳链长度可以为8至18，所述二级配体B”的碳链长度可以为4至6。
在一些示例性实施例中，所述二级配体B”的碳原子(包括主链及支链上的碳原子)个数不超过所述一级配体A”的碳原子(包括主链及支链上的碳原子)个数的一半；此时可以使量子点表面具有较高的配体覆盖率。
在一些示例性实施例中，所述一级配体A”可以为芳香烃配体或脂肪烃配体，所述二级配体B”可以为脂肪烃配体，可以避免形成较大的位阻作用。
在一些示例性实施例中，所述一级配体A”可以为直链脂肪烃配体，碳原子个数在8至18范围内；或者，所述一级配体A”为含有支链的脂肪烃配体，支链的碳原子个数在1至6范围内或8至18范围内；所述二级配体B”可以为直链脂肪烃配体，碳原子个数在4至6范围内；或者，所述二级配体B”为含有支链的脂肪烃配体，支链的碳原子个数在1至2范围内或4至6范围内，且支链的个数为1。此时量子点的溶解性和对载流子的传输性均较好。
在本公开实施例中，所述一级配体A”和所述二级配体B”中均不含有大位阻基团，所述大位阻基团包括苯基、三苯胺基团或咔唑基团。
在一些示例性实施例中，所述一级配体A”和所述二级配体B”中的至少一个可以含有极性基团。
非极性的脂肪链与非极性溶剂的之间作用力很弱，不利于量子点在非极性溶剂中的分散溶解，使得量子点整体的溶解性不高，导致在直接光刻法进行图案化工艺时，量子点的显影经常发生有残留无法完全洗净的现象。
本公开实施例的量子点材料，在配体链上引入极性基团，提高了量子材料在极性溶剂中的溶解性，利于在显影时被完全去除。
在一些示例性实施例中，所述极性基团可以选自酰胺基、醚基、羰基和酯基中的任意一种或多种。
在本公开实施例中，所述一级配体A”与所述二级配体B”的极性相似，可以提高量子点的溶解性，避免量子点在显影过程后形成残留，避免全彩量子点显示中的混色问题。
在一些示例性实施例中，所述一级配体A”与所述二级配体B”中可以含有同等极性级别(同为强极性、中等极性或弱极性)的极性基团，并且极性基团的个数大约相同，可以使所述一级配体A”与所述二级配体B”的极性相似。例如，当所述一级配体A”中含有酰胺基、醚基、羰基、酯基等亲水性基团时，所述二级配体B”中也含有酰胺基、醚基、羰基、酯基等亲水性基团。
在一些示例性实施例中，配体可以为直链脂肪烃配体，其通式如下：
Figure PCTCN2021097504-appb-000001
n 1＝1或2，在所述一级配体A”中n 2＝4至12，在所述二级配体B”中n 2＝0或1；
或者，配体可以为含有支链的脂肪烃配体，其通式如下：
Figure PCTCN2021097504-appb-000002
在所述一级配体A”中n 3＝4至12，在所述二级配体B”中n 3＝0或1；
R 1可以为硫醚基、醇胺基、醚基、酰胺基或环氧基；
R 2可以为酰胺基、醚基、羰基或酯基。
在一些示例性实施例中，所述一级配体A”可以为
Figure PCTCN2021097504-appb-000003
Figure PCTCN2021097504-appb-000004
所述二级配体B”可以为：
Figure PCTCN2021097504-appb-000005
在一些示例性实施例中，所述一级配体A”可以为
Figure PCTCN2021097504-appb-000006
所述二级配体B”可以为
Figure PCTCN2021097504-appb-000007
在一些示例性实施例中，所述一级配体A”可以为
Figure PCTCN2021097504-appb-000008
所述二级配体B”可以为
Figure PCTCN2021097504-appb-000009
在一些示例性实施例中，所述一级配体A”可以为
Figure PCTCN2021097504-appb-000010
所述二级配体B”可以为
Figure PCTCN2021097504-appb-000011
在一些示例性实施例中，所述一级配体A”与所述二级配体B”的摩尔比范围可以为1:10至10:1，例如，10:1、9:1、8:1、7:1、6:1、5:1、4:1、3:1、2:1、1:1、1:2、1:3、1:4、1:5、1:6、1:7、1:8、1:9、1:10；此时可以更好地减小位阻作用，提高量子点表面的配体覆盖率。
本公开实施例还提供一种如上所述的量子点材料的制备方法，包括：
S1：使用碳原子个数均为3至5的短链配体A、短链配体B对量子点进行包覆；
S2：如图3所示，S1得到的表面包覆有短链配体A和短链配体B的量子点表面包覆的短链配体A、短链配体B分别与化合物A’和化合物B’进行光接枝反应，形成表面包覆有一级配体A”和二级配体B”的量子点，并使所述一级配体A”的碳链长度是所述二级配体B”的碳链长度的1.3倍至4.5倍； 任选地，所述化合物A’和所述化合物B’中的至少一个含有极性基团。
在一些示例性实施例中，所述短链配体A与所述短链配体B的摩尔比范围可以为10:1至1:10，例如，10:1、9:1、8:1、7:1、6:1、5:1、4:1、3:1、2:1、1:1、1:2、1:3、1:4、1:5、1:6、1:7、1:8、1:9、1:10。
在一些示例性实施例中，所述化合物A’的碳链长度可以为2至16，所述化合物B’的碳链长度可以为2至4。
在一些示例性实施例中，所述化合物A’与所述短链配体A的摩尔比可以为1.2:1，所述化合物B’与所述短链配体B的摩尔比可以为1.2:1，可以使S1得到的表面包覆有短链配体A和短链配体B的量子点表面包覆的短链配体A、短链配体B完全被反应掉。
在本公开实施例中，所述化合物A’中含有的可与所述短链配体A发生光接枝反应的基团与所述化合物B’中含有的可与所述短链配体B发生光接枝反应的基团是不同的；可以确保在光接枝反应中，化合物A’仅仅与短链配体A反应但不与短链配体B反应，同时化合物B’仅仅与短链配体B反应但不与短链配体A反应。
在一些示例性实施例中，所述短链配体A与所述短链配体B末端可以含有亲水性基团，使得一级配体A”和二级配体B”带有亲水性基团，而亲水性基团的极性一般较大，使量子点在亲水性溶剂中的溶解性和稳定性较好。所述亲水性基团可以为羧基、氨基、羟基、醛基或羰基。
在一些示例性实施例中，所述短链配体A可以为：
Figure PCTCN2021097504-appb-000012
所述短链配体B可以为：
Figure PCTCN2021097504-appb-000013
在一些示例性实施例中，所述短链配体A可以为
Figure PCTCN2021097504-appb-000014
所述短链配体B可以为
Figure PCTCN2021097504-appb-000015
在一些示例性实施例中，所述短链配体A可以为
Figure PCTCN2021097504-appb-000016
所述短链配体B可以为
Figure PCTCN2021097504-appb-000017
在一些示例性实施例中，所述短链配体A可以为
Figure PCTCN2021097504-appb-000018
所述短链配体B可以为
Figure PCTCN2021097504-appb-000019
在一些示例性实施例中，所述化合物A’中含有的可与短链配体A发生光接枝反应的基团为羰基、醚基或酰胺基，所述化合物B’中含有的可与短链配体B发生光接枝反应的基团为羰基、醚基或酰胺基。
在一些示例性实施例中，所述化合物A’可以为：
Figure PCTCN2021097504-appb-000020
Figure PCTCN2021097504-appb-000021
所述化合物B’可以为：
Figure PCTCN2021097504-appb-000022
在一些示例性实施例中，所述化合物A’可以为
Figure PCTCN2021097504-appb-000023
所述化合物B’可以为
Figure PCTCN2021097504-appb-000024
在一些示例性实施例中，所述化合物A’可以为
Figure PCTCN2021097504-appb-000025
所述化合物B’可以为
Figure PCTCN2021097504-appb-000026
在一些示例性实施例中，所述化合物A’可以为
Figure PCTCN2021097504-appb-000027
所述化合物B’可以为
Figure PCTCN2021097504-appb-000028
本公开实施例还提供一种量子点材料，所述量子点材料包括：
量子点本体和包覆在所述量子点本体表面的一级配体A”和二级配体B”，所述一级配体A”和所述二级配体B”中的至少一个含有极性基团。
在本公开实施例中，所述一级配体A”与所述二级配体B”的极性相似。
在一些示例性实施例中，所述极性基团可以选自酰胺基、醚基、羰基和酯基中的任意一种或多种。
本公开实施例还提供一种如上所述的量子点材料的制备方法，包括：
S1：使用碳原子个数均为3至5的短链配体A、短链配体B对量子点进行包覆；
S2：S1得到的表面包覆有短链配体A和短链配体B的量子点表面包覆的短链配体A、短链配体B分别与化合物A’和化合物B’进行光接枝反应， 形成表面包覆有一级配体A”和二级配体B”的量子点；所述化合物A’和所述化合物B’中的至少一个含有极性基团。
在一些示例性实施例中，步骤S1可以包括：使用碳原子个数均为3至5的短链配体A、短链配体B对含有原始配体的量子点表面的原始配体进行交换，使短链配体A、短链配体B包覆在量子点表面。
本公开实施例还提供一种量子点显示器件，所述量子点显示器件包括如上所述的量子点材料。
在一些示例性实施例中，所述量子点显示器件可以包括：阳极、阴极，以及设于所述阳极和所述阴极之间的发光层，所述发光层的材料为所述量子点材料。
在一些示例性实施例中，所述量子点显示器件可以为QLED器件、QD-OLED器件或QD-LCD器件。
在一些示例性实施例中，所述量子点显示器件为量子点发光器件(QLED)，包括阳极、阴极，以及设于所述阳极和所述阴极之间的量子点发光层，所述量子点发光层包括如上所述的量子点材料。
在一些示例性实施例中，所述量子点显示器件为QD-OLED器件或QD-LCD器件，包括色转换层，所述色转换层包括如上所述的量子点材料。
本公开实施例还提供一种显示装置，包括多个上述的量子点显示器件。
下面对本公开实施例的量子点材料及其制备方法和在图案化QLED器件中的应用进行示例性说明。
实施例1
高配体覆盖率量子点的制备：
将以吡啶为原始配体的硒化镉/硫化锌量子点溶于甲苯溶液中形成20mg/ml的量子点溶液，取1ml量子点溶液并向其中加入0.5ml 4-巯基-1-丁醇(短链配体A)和3-巯基-1-丙胺(短链配体B)，短链配体A与短链配体B的摩尔比n A:n B＝2:1(在其他实施例中可以在1:10至10:1范围内)，室温下搅拌4小时使短链配体A与短链配体B取代原始的吡啶配体以进行配体交 换，之后将表面包覆有短链配体A和短链配体B的量子点用甲苯进行沉淀，去除上清液后使用0.5ml乙醇溶解表面包覆有短链配体A和短链配体B的量子点，使用3ml甲苯进行沉淀，离心后丢弃上清液，80度真空抽干后得到表面包覆有短链配体A和短链配体B的量子点粉末，将该表面包覆有短链配体A和短链配体B的量子点粉末重新溶于乙醇中，形成表面包覆有短链配体A和短链配体B、浓度为20mg/ml的量子点溶液。
QLED器件的制备：
如图4、图5所示，图4为本实施例的化学反应流程图；图5为全彩QLED的制备流程图。在沉积氧化铟锡(Indium Tin Oxide,ITO)的基板10上以2500rpm的转速旋涂氧化锌纳米粒子作为电子传输层20，120度退火5分钟；以3000rpm旋涂上述本实施例制备的表面包覆有短链配体A和短链配体B的红光量子点溶液，形成红光量子点(RQD)膜层30；将含有PAG(2-(4-甲氧基苯乙烯基)-4,6-双(三氯甲基)-1,3,5-三嗪)的化合物A’
Figure PCTCN2021097504-appb-000029
和化合物B’
Figure PCTCN2021097504-appb-000030
的甲苯溶液滴加在量子点膜层上，进行曝光(能量100mj)后使用氯仿进行显影(120s)，显影完成后在120度下加热10分钟，待去除的红光量子点膜层30’被去除，形成图案化的红光量子点膜层30；按照相同的工艺方法制备图案化的绿色量子点(GQD)膜层40和图案化的蓝色图量子点(BQD)膜层50。完成后通过蒸镀制备空穴传输层60，空穴注入层70和金属电极80(例如银电极)，完成器件制备。
实施例2
高配体覆盖率量子点的制备：
将以吡啶为原始配体的硒化镉/硫化锌量子点溶于甲苯溶液中形成20mg/ml的量子点溶液，取1ml量子点溶液并向其中加入0.5ml 3-巯基-2-甲 基-1-丙胺(短链配体A)和3-巯基-1-丙醇(短链配体B)，短链配体A与短链配体B的摩尔比n A:n B＝1:1(在其他实施例中可以在10:1至1:10范围内)，室温下搅拌4小时使短链配体A与短链配体B取代原始的吡啶配体以进行配体交换，之后将表面包覆有短链配体A和短链配体B的量子点用甲苯进行沉淀，去除上清液后使用0.5ml乙醇溶解表面包覆有短链配体A和短链配体B的量子点，使用3ml甲苯进行沉淀，离心后丢弃上清液，80度真空抽干后得到表面包覆有短链配体A和短链配体B的量子点粉末，将该表面包覆有短链配体A和短链配体B的量子点粉末重新溶于乙醇中形成表面包覆有短链配体A和短链配体B、浓度为20mg/ml的量子点溶液。
QLED器件的制备：
如图6所示，图6为本实施例的化学反应流程图。在沉积ITO的基板10上以2500rpm的转速旋涂氧化锌纳米粒子作为电子传输层20，120度退火5分钟；以3000rpm旋涂上述本实施例制备的表面包覆有短链配体A和短链配体B的红光量子点溶，形成红光量子点(RQD)膜层30；将含有PAG(2-(4-甲氧基苯乙烯基)-4,6-双(三氯甲基)-1,3,5-三嗪)的化合物A’
Figure PCTCN2021097504-appb-000031
和化合物B’
Figure PCTCN2021097504-appb-000032
的甲苯溶液滴加在量子点膜层上，进行曝光(能量100mj)后使用氯仿进行显影(120s)，显影完成后在120度下加热10分钟，形成图案化的红光量子点膜层30；按照相同的工艺方法制备图案化的绿色量子点(GQD)膜层40和图案化的蓝色图量子点(BQD)膜层50。完成后通过蒸镀制备空穴传输层60，空穴注入层70和金属电极80(例如银电极)，完成器件制备。
实施例3
高配体覆盖率量子点的制备：
将以吡啶为原始配体的硒化镉/硫化锌量子点溶于甲苯溶液中形成20mg/ml的量子点溶液，取1ml量子点溶液并向其中加入0.5ml 3-巯基丙醛(短链配体A)和3-巯基-1-丙胺(短链配体B)，短链配体A与短链配体B的摩尔比n A:n B＝1:1(在其他实施例中可以在1:10至10:1范围内)，室温下搅拌4小时使短链配体A与短链配体B取代原始的吡啶配体以进行配体交换，之后将表面包覆有短链配体A和短链配体B的量子点用甲苯进行沉淀，去除上清液后使用0.5ml乙醇溶解表面包覆有短链配体A和短链配体B的量子点，使用3ml甲苯进行沉淀，离心后丢弃上清液，80度真空抽干后得到表面包覆有短链配体A和短链配体B的量子点粉末，将该表面包覆有短链配体A和短链配体B的量子点粉末重新溶于乙醇中，形成表面包覆有短链配体A和短链配体B、浓度为20mg/ml的量子点溶液。
QLED器件的制备：
如图7所示，图7为本实施例的化学反应流程图。在沉积ITO的基板10上以2500rpm的转速旋涂氧化锌纳米粒子作为电子传输层20，120度退火5分钟；以3000rpm旋涂上述本实施例制备的表面包覆有短链配体A和短链配体B的红光量子点溶液，形成红光量子点(RQD)膜层30；将含有PAG(2-(4-甲氧基苯乙烯基)-4,6-双(三氯甲基)-1,3,5-三嗪)的化合物A’
Figure PCTCN2021097504-appb-000033
和化合物B’
Figure PCTCN2021097504-appb-000034
的甲苯溶液滴加在量子点膜层上，进行曝光(能量100mj)后使用氯仿进行显影(120s)，显影完成后120度进行加热10分钟，形成图 案化的红光量子点膜层30；按照相同的工艺方法制备图案化的绿色量子点(GQD)膜层40和图案化的蓝色图量子点(BQD)膜层50。完成后通过蒸镀制备空穴传输层60，空穴注入层70和金属电极80(例如银电极)，完成器件制备。
虽然本公开所揭露的实施方式如上，但所述的内容仅为便于理解本公开而采用的实施方式，并非用以限定本公开。任何所属领域内的技术人员，在不脱离本公开所揭露的精神和范围的前提下，可以在实施的形式及细节上进行任何的修改与变化，但本申请的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (27)

  1. 一种量子点材料，所述量子点材料包括：
    量子点本体和包覆在所述量子点本体表面的一级配体A”和二级配体B”，所述一级配体A”的碳链长度是所述二级配体B”的碳链长度的1.3倍至4.5倍。
  2. 如权利要求1所述的量子点材料，其中，所述一级配体A”的碳链长度为8至18，所述二级配体B”的碳链长度为4至6。
  3. 如权利要求1所述的量子点材料，其中，所述二级配体B”的碳原子个数不超过所述一级配体A”的碳原子个数的一半。
  4. 如权利要求1至3中任一项所述的量子点材料，其中，所述一级配体A”为芳香烃配体或脂肪烃配体，所述二级配体B”为脂肪烃配体。
  5. 如权利要求4所述的量子点材料，其中，所述一级配体A”为直链脂肪烃配体，碳原子个数在8至18范围内；或者，所述一级配体A”为含有支链的脂肪烃配体，支链的碳原子个数在1至6范围内或8至18范围内；
    所述二级配体B”为直链脂肪烃配体，碳原子个数在4至6范围内；或者，所述二级配体B”为含有支链的脂肪烃配体，支链的碳原子个数在1至2范围内或4至6范围内，且支链的个数为1。
  6. 如权利要求4所述的量子点材料，其中，所述一级配体A”和所述二级配体B”中均不含有大位阻基团，所述大位阻基团包括苯基、三苯胺基团或咔唑基团。
  7. 如权利要求1至6中任一项所述的量子点材料，其中，所述一级配体A”和所述二级配体B”中的至少一个含有极性基团。
  8. 如权利要求7所述的量子点材料，其中，所述一级配体A”与所述二级配体B”的极性相似。
  9. 如权利要求8所述的量子点材料，其中，所述极性基团选自酰胺基、醚基、羰基和酯基中的任意一种或多种。
  10. 如权利要求1或5所述的量子点材料，其中，配体为直链脂肪烃配体，其通式如下：
    Figure PCTCN2021097504-appb-100001
    n 1＝1或2，在所述一级配体A”中n 2＝4至12，在所述二级配体B”中n 2＝0或1；
    或者，配体为含有支链的脂肪烃配体，其通式如下：
    Figure PCTCN2021097504-appb-100002
    在所述一级配体A”中n 3＝4至12，在所述二级配体B”中n 3＝0或1；
    R 1为硫醚基、醇胺基、醚基、酰胺基或环氧基；
    R 2为酰胺基、醚基、羰基或酯基。
  11. 如权利要求1所述的量子点材料，其中，所述一级配体A”为
    Figure PCTCN2021097504-appb-100003
    Figure PCTCN2021097504-appb-100004
    所述二级配体B”为：
    Figure PCTCN2021097504-appb-100005
  12. 如权利要求1至11中任一项所述的量子点材料，其中，所述一级配体A”与所述二级配体B”的摩尔比范围为1:10至10:1。
  13. 一种如权利要求1至12中任一项所述的量子点材料的制备方法，包括：
    S1：使用碳原子个数均为3至5的短链配体A、短链配体B对量子点进行包覆；
    S2：S1得到的表面包覆有短链配体A和短链配体B的量子点表面包覆的短链配体A、短链配体B分别与化合物A’和化合物B’进行光接枝反应，形成表面包覆有一级配体A”和二级配体B”的量子点，并使所述一级配体A”的碳链长度是所述二级配体B”的碳链长度的1.3倍至4.5倍；任选地，所述化合物A’和所述化合物B’中的至少一个含有极性基团。
  14. 如权利要求13所述的制备方法，其中，所述短链配体A与所述短链配体B的摩尔比范围为1:10至10:1。
  15. 如权利要求13所述的制备方法，其中，所述化合物A’的碳链长度 为2至16，所述化合物B’的碳链长度为2至4。
  16. 如权利要求13至15中任一项所述的制备方法，其中，所述化合物A’中含有的可与所述短链配体A发生光接枝反应的基团与所述化合物B’中含有的可与所述短链配体B发生光接枝反应的基团是不同的。
  17. 如权利要求16所述的制备方法，其中，所述短链配体A与所述短链配体B末端含有亲水性基团，所述亲水性基团为羧基、氨基、羟基、醛基、或羰基。
  18. 如权利要求13至15中任一项所述的制备方法，其中，所述短链配体A为：
    Figure PCTCN2021097504-appb-100006
    所述短链配体B为：
    Figure PCTCN2021097504-appb-100007
  19. 如权利要求16所述的制备方法，其中，所述化合物A’中含有的可与短链配体A发生光接枝反应的基团为羰基、醚基或酰胺基，所述化合物B’中含有的可与短链配体B发生光接枝反应的基团为羰基、醚基或酰胺基。
  20. 如权利要求13至15中任一项所述的制备方法，其中，所述化合物A’为：
    Figure PCTCN2021097504-appb-100008
    Figure PCTCN2021097504-appb-100009
    所述化合物B’为：
    Figure PCTCN2021097504-appb-100010
  21. 一种量子点材料，所述量子点材料包括：
    量子点本体和包覆在所述量子点本体表面的一级配体A”和二级配体B”，所述一级配体A”和所述二级配体B”中的至少一个含有极性基团。
  22. 如权利要求21所述的量子点材料，其中，所述一级配体A”与所述二级配体B”的极性相似。
  23. 如权利要求21或22所述的量子点材料，其中，所述极性基团选自酰胺基、醚基、羰基和酯基中的任意一种或多种。
  24. 一种如权利要求21至23中任一项所述的量子点材料的制备方法，包括：
    S1：使用碳原子个数均为3至5的短链配体A、短链配体B对量子点进行包覆；
    S2：S1得到的表面包覆有短链配体A和短链配体B的量子点表面包覆的短链配体A、短链配体B分别与化合物A’和化合物B’进行光接枝反应， 形成表面包覆有一级配体A”和二级配体B”的量子点；所述化合物A’和所述化合物B’中的至少一个含有极性基团。
  25. 一种量子点显示器件，所述量子点显示器件包括如权利要求1至12、21至23中任一项所述的量子点材料。
  26. 如权利要求25所述的量子点显示器件，包括：阳极、阴极，以及设于所述阳极和所述阴极之间的发光层，所述发光层的材料为所述量子点材料。
  27. 一种显示装置，包括多个如权利要求25所述的量子点显示器件。
PCT/CN2021/097504 2021-05-31 2021-05-31 量子点材料及其制备方法、量子点显示器件、显示装置 WO2022252088A1 (zh)

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