JP7291800B2 - Ledフィラメント及びledフィラメント電球 - Google Patents
Ledフィラメント及びledフィラメント電球 Download PDFInfo
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- JP7291800B2 JP7291800B2 JP2021556904A JP2021556904A JP7291800B2 JP 7291800 B2 JP7291800 B2 JP 7291800B2 JP 2021556904 A JP2021556904 A JP 2021556904A JP 2021556904 A JP2021556904 A JP 2021556904A JP 7291800 B2 JP7291800 B2 JP 7291800B2
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- 239000000463 material Substances 0.000 claims description 291
- 239000000758 substrate Substances 0.000 claims description 141
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 76
- -1 manganese activated fluoride Chemical class 0.000 claims description 55
- 239000000203 mixture Substances 0.000 claims description 55
- 239000011572 manganese Substances 0.000 claims description 51
- 229910052748 manganese Inorganic materials 0.000 claims description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
- 239000002245 particle Substances 0.000 claims description 17
- 238000000149 argon plasma sintering Methods 0.000 claims description 14
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 13
- 150000002910 rare earth metals Chemical class 0.000 claims description 13
- 238000002834 transmittance Methods 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 10
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 10
- 239000000395 magnesium oxide Substances 0.000 claims description 10
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 9
- 229910052712 strontium Inorganic materials 0.000 claims description 8
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 229910020440 K2SiF6 Inorganic materials 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910020491 K2TiF6 Inorganic materials 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 239000005350 fused silica glass Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 127
- 239000002356 single layer Substances 0.000 description 31
- 230000005284 excitation Effects 0.000 description 27
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 14
- 238000005424 photoluminescence Methods 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 9
- 239000002355 dual-layer Substances 0.000 description 9
- 229910052693 Europium Inorganic materials 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 229910052788 barium Inorganic materials 0.000 description 8
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 8
- 239000011575 calcium Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 230000000875 corresponding effect Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000009877 rendering Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 230000002596 correlated effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000004584 weight gain Effects 0.000 description 4
- 235000019786 weight gain Nutrition 0.000 description 4
- 239000013585 weight reducing agent Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- 238000001429 visible spectrum Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 230000000638 stimulation Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
- C09K11/615—Halogenides
- C09K11/616—Halogenides with alkali or alkaline earth metals
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- C—CHEMISTRY; METALLURGY
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2103/00—Elongate light sources, e.g. fluorescent tubes
- F21Y2103/10—Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2107/00—Light sources with three-dimensionally disposed light-generating elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
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- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Description
本出願は、2019年3月18に出願された「PHOTOLUMINESCENCE LAYER LIGHT EMITTING DEVICE」と題する米国仮出願第62/820,249号、2019年4月9日に出願された「LED-FILAMENTS AND LED-FILAMENT LAMPS」と題する米国仮出願第62/831,699号、及び2019年8月13日に出願された「LED-FILAMENTS AND LED-FILAMENT LAMPS」と題する米国実用特許出願第16/540,019号の優先権の利益を主張し、それらの各々の全体が参照として本明細書に組み込まれている。
本発明の実施形態は、LEDフィラメント及びLEDフィラメント電球を対象としている。より具体的には、本発明は、排他的ではないが、少なくとも80の平均演色評価数CRI Raを有する光を生成するLEDフィラメント及びLEDフィラメント電球に関する。
Claims (14)
- LEDフィラメントであって、
少なくとも部分的に光透過性の基材と、
前記基材の前面にあるLEDチップのアレイと、
前記LEDチップのアレイに配置された、第1の狭帯域マンガン活性化フッ化物赤色フォトルミネッセンス材料を含む第1の層と、
前記第1の層に配置された、第1の広帯域の緑色から赤色のフォトルミネッセンス材料を含む第2の層と、
前記基材の裏面を覆う第2の広帯域の緑色から赤色のフォトルミネッセンス材料を含む第3の層と、
を含み、
前記基材の前記裏面上に、狭帯域マンガン活性化フッ化物赤色フォトルミネッセンス材料を含まないか、又は前記基材の前記裏面上の赤色フォトルミネッセンス材料含有量の総量において最大で5重量%の第2の狭帯域マンガン活性化フッ化物赤色フォトルミネッセンス材料を前記基材の前記裏面上に含む、LEDフィラメント。 - 前記基材が、2%~70%、30%~50%、10%~30%、及び20%~100%のうちの少なくとも1つの透過率を有する、請求項1に記載のLEDフィラメント。
- 前記第1の層が、前記LEDチップの少なくとも1つにおいて少なくとも主発光面に均一な厚さの層を含む、又は、前記LEDチップの少なくとも1つにおいて各発光面に均一な厚さの層を含む、請求項1に記載のLEDフィラメント。
- 前記第1の層、前記第2の層、及び前記第3の層の少なくとも1つが、光散乱材料の粒子を含む、請求項1~3のいずれか一項に記載のLEDフィラメント。
- 前記第1の広帯域の緑色から赤色のフォトルミネッセンス材料が、第1の広帯域赤色フォトルミネッセンス材料を含み、前記第1の狭帯域マンガン活性化フッ化物赤色フォトルミネッセンス材料及び前記第1の広帯域赤色フォトルミネッセンス材料の総量に対する前記第1の広帯域赤色フォトルミネッセンス材料の含有量比が、少なくとも20重量%、少なくとも30重量%、少なくとも40重量%、及び、20重量%から60重量%未満までの少なくとも1つである、請求項1~4のいずれか一項に記載のLEDフィラメント。
- 前記第1及び第2の狭帯域マンガン活性化フッ化物赤色フォトルミネッセンス材料のうちの少なくとも1つが、K2SiF6:Mn4+、K2GeF6:Mn4+、及びK2TiF6:Mn4+のうちの少なくとも1つである、請求項1~5のいずれか一項に記載のLEDフィラメント。
- 前記第1の広帯域の緑色から赤色のフォトルミネッセンス材料、及び前記第2の広帯域の緑色から赤色のフォトルミネッセンス材料のうちの少なくとも1つが、希土類活性化赤色フォトルミネッセンス材料を含む、請求項1~6のいずれか一項に記載のLEDフィラメント。
- 前記希土類活性化赤色フォトルミネッセンス材料が、一般組成式AAlSiN3:Eu2+(式中、Aが、Ca、Sr又はBaのうちの少なくとも1つである)を有する、窒化物系蛍光体材料と、一般組成式(Ca1-xSrx)(Se1-ySy):Eu2+(式中、0≦x≦1かつ0<y≦1である)を有する、硫化物系蛍光体材料と、一般組成式(Ba1-xSrx)3SiO5:Eu2+(式中、0≦x≦1である)を有する、ケイ酸塩系蛍光体材料と、のうちの少なくとも1つである、請求項7に記載のLEDフィラメント。
- 前記少なくとも部分的に光透過性の基材が、アルミナ、シリカ、酸化マグネシウム、サファイア、石英ガラス、ダイヤモンド、酸化ケイ素、及びこれらの混合物からなる群から選択される材料を含む、請求項1~8のいずれか一項に記載のLEDフィラメント。
- 前記第1の広帯域の緑色から赤色のフォトルミネッセンス材料が第1の広帯域の赤色フォトルミネッセンス材料を含み、前記第2の広帯域の緑色から赤色のフォトルミネッセンス材料が第2の広帯域の赤色フォトルミネッセンス材料を含み、前記第1の広帯域の赤色フォトルミネッセンス材料のピーク発光波長は、前記第2の広帯域の赤色フォトルミネッセンス材料のピーク発光波長とは異なる、請求項1~9のいずれか一項に記載のLEDフィラメント。
- 前記第1の広帯域の赤色フォトルミネッセンス材料の前記ピーク発光波長は、
前記第2の広帯域の赤色フォトルミネッセンス材料、及び/又は、
前記第1の狭帯域マンガン活性化フッ化物赤色フォトルミネッセンス材料
のピーク発光波長よりも短い、請求項10に記載のLEDフィラメント。 - 前記第1の広帯域の赤色フォトルミネッセンス材料の前記ピーク発光波長が約615nmである、及び/又は、
前記第2の広帯域の赤色フォトルミネッセンス材料の前記ピーク発光波長が約630nmから約650nmまでである、
請求項11に記載のLEDフィラメント。 - 前記LEDフィラメントが少なくとも150lm/Wの発光効率を有する、
請求項1~12のいずれか一項に記載のLEDフィラメント。 - 前記第1の層、前記第2の層、及び前記第3の層の少なくとも1つと接触する光散乱材料の粒子の別個の層を含む、請求項1~13のいずれか一項に記載のLEDフィラメント。
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US62/831,699 | 2019-04-09 | ||
US16/540,019 US11342311B2 (en) | 2019-03-18 | 2019-08-13 | LED-filaments and LED-filament lamps utilizing manganese-activated fluoride red photoluminescence material |
US16/540,019 | 2019-08-13 | ||
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JP2011129661A (ja) | 2009-12-17 | 2011-06-30 | Nichia Corp | 発光装置 |
JP2016076699A (ja) | 2014-10-07 | 2016-05-12 | 日亜化学工業株式会社 | 発光装置 |
US20160372638A1 (en) | 2015-06-18 | 2016-12-22 | Cree, Inc. | Light emitting devices having closely-spaced broad-spectrum and narrow-spectrum luminescent materials and related methods |
WO2019005597A1 (en) | 2017-06-29 | 2019-01-03 | Intematix Corporation | NARROW BAND RED PHOTOLUMINESCENCE MATERIALS FOR SEMICONDUCTOR LIGHT EMITTING DEVICES AND FILAMENTS |
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