CN109244211A - 冲压封装发光二极管装置及其制造方法 - Google Patents
冲压封装发光二极管装置及其制造方法 Download PDFInfo
- Publication number
- CN109244211A CN109244211A CN201710556365.6A CN201710556365A CN109244211A CN 109244211 A CN109244211 A CN 109244211A CN 201710556365 A CN201710556365 A CN 201710556365A CN 109244211 A CN109244211 A CN 109244211A
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- light emitting
- punching press
- encapsulating
- luminescence unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004080 punching Methods 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title description 10
- 239000000463 material Substances 0.000 claims abstract description 138
- 238000004020 luminiscence type Methods 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 47
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000126 substance Substances 0.000 claims abstract description 24
- 238000001228 spectrum Methods 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims description 30
- 239000000919 ceramic Substances 0.000 claims description 20
- 239000000843 powder Substances 0.000 claims description 17
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 16
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 14
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 13
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 11
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 7
- 150000004645 aluminates Chemical class 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 239000002105 nanoparticle Substances 0.000 claims description 5
- 238000004017 vitrification Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 230000004927 fusion Effects 0.000 claims description 3
- 230000003760 hair shine Effects 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 238000012805 post-processing Methods 0.000 claims 1
- 238000012958 reprocessing Methods 0.000 claims 1
- 238000007711 solidification Methods 0.000 abstract description 5
- 230000008023 solidification Effects 0.000 abstract description 5
- 229920000647 polyepoxide Polymers 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 239000003822 epoxy resin Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 10
- 230000017525 heat dissipation Effects 0.000 description 10
- 238000012546 transfer Methods 0.000 description 9
- 238000000605 extraction Methods 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229940106691 bisphenol a Drugs 0.000 description 2
- 235000013339 cereals Nutrition 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- -1 polysiloxanes Polymers 0.000 description 2
- 229910001414 potassium ion Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000007873 sieving Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000000017 hydrogel Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000003752 improving hair Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
Abstract
本发明公开了一种冲压封装发光二极管装置,包含:一基板,包括一第一固化材料、一第一奈米导热材以及一第一荧光材;一发光单元,设置在该基板的表面上;二条导线,分别连接该发光单元;以及一封装材,覆盖该等导线及该发光单元,系藉由冲压成型方式所形成之一体固化之结构,包含一第二固化材料、一高折射率物质、一第二奈米导热材以及一第二荧光材,其中,该发光单元所发出之光系经过该基板以及该封装材,以直接对外部出光。
Description
技术领域
本发明有关于一种冲压封装发光二极管(punching packaged light-emittingdiode)装置及其制造方法,特别有关于一种具高折射率之冲压封装发光二极管(high-reflective punching packaged LED)装置及其制造方法。
背景技术
发光二极管(LED)因发光效率与寿命高于传统之卤素灯或炽光灯,已为照明发展之重点方向。传统之发光二极管芯片利用直接封装(COB;Chip on board)技术,将发光二极管芯片固定在铝、PCB、或陶瓷基板上,故具有单面发光与发光效率低的困扰。另一种发光二极管芯片之传统封装技术系将芯片封装于玻璃基板上(Chip on glass),虽发光二极管芯片发光效率提高,但玻璃基板之散热效率不佳、生产良率低、且玻璃基板两侧之出光色温不同,故此种发光二极管芯片技术仍有待改善。
请参照图1,系显示一种传统之发光二极管结构10。该发光二极管10包括一基板单元11、一银导电单元12、一散热单元13、一发光单元14及一封装单元15。该基板单元11例如为陶瓷基板11。该银导电单元12具有两个设置于陶瓷基板11上表面的顶层导电焊垫、两个设置于陶瓷基板11下表面的底层导电焊垫、及多个贯穿陶瓷基板11且电性连接于每一个顶层导电焊垫及每一个底层导电焊垫间的贯穿导电层。该散热单元13具有一设置于陶瓷基板11上表面的顶层散热块及一设置于陶瓷基板11下表面的底层散热块。该发光单元14具有一设置于顶层散热块上且透过两个导线12电性连接于两个顶层导电焊垫间的发光组件14。该封装单元15具有一设置于银导电单元12及散热单元13上且覆盖发光组件14的封装胶体15。
上述发光二极管10透过顶层散热块13、陶瓷基板11以及底层散热块13将发光组件14所产生的热量导引至外界,使散热效能得以有效被提升。虽然可提升发光二极管封装结构散热效果,但,随着发光二极管的薄型化需求,发光二极管10厚度仍过厚,且散热组件13设计复杂,产生效益不佳。再者,制备该发光二极管10的方法涉及切割步骤,使得该发光二极管10的制备步骤繁琐,且陶瓷基板11又易受损。而陶瓷基板11为一不透光材质,使得该发光二极管10无法四面八方发光,更减损其发光效益。
发光二极管发光组件效率分为发光二极管芯片的内、外量子转换效率与封装材料的光萃取效率。内部量子转换效率是发光二极管芯片通电后,电光转换的效能。一般而言,发光二极管芯片的内部量子转换效率很高,但因发光二极管芯片的外部量子转换效率与封装材料的光萃取效率很低,导致发光二极管发光组件最终亮度低于发光二极管芯片内部量子转换效率所能提供的效能。造成发光二极管芯片的外部量子转换效率与封装材料的光萃取效率低落的原因,主要归咎于不同介质间之全反射损失与封装材料本身的吸收。就发光二极管发光组件来看,经由电子、电洞接合,光线从发光二极管芯片活性层发出后,经由封装材料才到达外部空气中;而从光线所行经的路径的路径来看,必须经过许多折射率不同的介质,例如磊晶层或封装材料层等,若光从高折射率物质进入低折射率物质时,其接口就会发生全反射现象,使得光波无法有效导出,反而局限在发光二极管发光组件内部,被封装材料吸收产生热量,进而降低发光二极管发光组件之效能与寿命。
此外,目前市面上发光二极管的输入功率只有15~20%转换成光,近80~85%转换成热,这些热如无法适时排出,将使发光二极管芯片的界面温度过高,而影响其发光强度及使用寿命。
有鉴于此,如何能增加发光二极管芯片的外部量子转换效率与封装材料的光萃取效率,并提供一设计简单、生产良率高、以及散热效果好的发光二极管封装结构,乃为至关重要的关键。
发明内容
为达到上述及其它目的,本发明提供一种冲压封装发光二极管装置及其制造方法,藉由调整封装材料中不同介质的折射率匹配、以及增加封装材料之穿透性(及散热性),且本发明从发光二极管的封装阶段就处理其散热问题,藉由散热基板的材料选用及介电层(绝缘层)的热传导改善,以形成先进又具备多功能高折射的导热透镜基板,可大幅提高发光二极管芯片的外部量子转换效率与封装材料的光萃取效率。
本发明系在封装材料中加入高折射率物质,且以冲压方式有效成型,使得本发明冲压封装发光二极管装置所发出的光谱,不同于习知白光发光二极管的光谱,而有类似太阳光谱之效果,此实为发光二极管之一大跃进。
就其中一个观点,本发明提供一种冲压封装发光二极管装置,包含:一基板,包括一第一固化材料、一第一奈米导热材以及一第一荧光材;一发光单元,设置在该基板的表面上;二条导线,分别连接该发光单元;以及一封装材,覆盖该等导线及该发光单元,系藉由冲压成型方式所形成之一体固化之结构,包含一第二固化材料、一高折射率物质、一第二奈米导热材以及一第二荧光材,其中,该发光单元所发出之光系经过该基板以及该封装材,以直接对外部出光。
一实施例中,该第一奈米导热材以及该第二奈米导热材包含有机或无机奈米粉、有机或无机奈米粒子、复数个金属粒子、复数个金属氧化物粒子、复数个陶瓷粒子、复数个碳系粒子、或其中之任一组合。
一实施例中,该高折射率物质包含TiO2、Nb2O5、Ta2O5、ZrO2、Si、Gap、Ge、lnP、PbS、或其中之任一组合。
一实施例中,其中,该第一荧光材以及该第二荧光材包含:黄色荧光材、红色荧光材、绿色荧光材、或橘色荧光材,而该第一荧光材以及该第二荧光材之材料为铝酸盐系荧光材料(Aluminate)、硅酸盐系荧光材料(Silicate)、氮化物系荧光材料(Nitride)、氮氧化物系荧光材料(Oxynitride)、或其中之任一组合。
就另一个观点,本发明提供一种冲压封装发光二极管的制作方法,包含下列步骤:提供复数个发光单元及一封装材,各发光单元例如是发光二极管,而封装材系包含可固化环氧树脂胶水、荧光粉混光材料、奈米散热粉填充物、以及高折射率物质等;提供一成型模,以供冲压成型之用,此成型模有对应于一封装壳体形状之一空腔;将该发光单元设置于空腔内之特定位置,而该封装材料包覆住该发光单元,亦即,进行包括浸润封装胶及过筛等步骤;进行陶化步骤,将该封装材料中所含的物质充分均匀地黏结融合;冲制成型:将该发光单元与该封装材料设入连续冲压成型机内冲压成型,以形成具一定形状之发光二极管成品;浸泡树脂,以填满冲压成型后留下的空隙;进行退火及后烤步骤:用以稳定固形及释放应力,使得该封装材料能够完全固化并包覆固定住该发光单元;后续处理:对长条状发光二极管成品进行玻璃包覆、防锈表面处理或其它后续加工处理。
一实施例中,该奈米散热材料包含有机或无机奈米粉、有机或无机奈米粒子、复数个金属粒子、复数个金属氧化物粒子、复数个陶瓷粒子、复数个碳系粒子、或其中之任一组合。
一实施例中,该高折射率物质包含TiO2、Nb2O5、Ta2O5、ZrO2、Si、Gap、Ge、lnP、PbS、或其中之任一组合。
一实施例中,其中,该荧光粉混光材料包含:黄色荧光材、红色荧光材、绿色荧光材、或橘色荧光材,而该第一荧光材以及该第二荧光材之材料为铝酸盐系荧光材料(Aluminate)、硅酸盐系荧光材料(Silicate)、氮化物系荧光材料(Nitride)、以及氮氧化物系荧光材料(Oxynitride)、或其中之任一组合。
本发明冲压封装发光二极管装置,系采用具有可透光性,或透明、半透明性质之基板以及封装材料,因此,可360度四面八方全方位全角度出光,达到真正全周光之出光效果。
附图说明
图1为现有技术中发光二极管封装装置的结构图;
图2A-2B为本发明优选实施例中冲压封装发光二极管装置的结构图;
图3A-3B为本发明另一优选实施例中冲压封装发光二极管装置的结构图;
图4A-4B为本发明再一优选实施例中冲压封装发光二极管装置的结构图;
图5为本发明优选实施例中冲压封装发光二极管的制作方法流程图;
图6为本发明优选实施例中发光二极管装置对照现有技术中发光二极管装置的光谱示意图。
具体实施方式
有关本发明之前述及其它技术内容、特点与功效,在以下配合参考附图和一较佳实施例的详细说明中,将可清楚的呈现。
参照图2A-2B,其显示根据本发明优选实施例之冲压封装发光二极管装置20,包括基板21,发光单元22,二条导线23,封装壳体24以及二条导电支架25等部件。其中,基板21系一透光基板21,例如透明荧光树脂基板21或是透明荧光陶瓷基板21,其中还包含奈米导热材以及荧光材。发光单元22系设置于基板21上,而基板21与封装壳体24共同包覆发光单元22。发光单元22较佳的是为发光二极管(LED)芯片,封装壳体24系藉由冲压成型方式所形成之一体固化之结构,封装壳体24系一透光封装壳体24,包含固化材料、高折射率物质、奈米导热材以及荧光材,而发光单元22系经由固化材料中的荧光材,以对封装壳体24之外部出光。此外,如第2B图所示,复数个冲压封装发光二极管装置20可以串联或并联起来,以达成不同的功能与需求。各发光单元22之外接导线25可包含但不限于二导电支架(如图式中,两凸出部份为所述之二导电支架)。
请参照图3A-3B,图3B显示根据本发明另一优选实施例之冲压封装发光二极管装置30,包括发光二极管单元34,封装壳体35以及二条外接导电支架36等部件。其中,如第3B图所示,冲压封装发光二极管装置30系一长条片状结构,其中包括复数个发光二极管单元34,每个发光二极管单元34包括基板31,发光单元32,以及二条导线33等部件。其中,基板31系一透光基板31,例如透明荧光树脂基板31或是透明荧光陶瓷基板31,其中还包含奈米导热材以及荧光材。发光单元32系设置于基板31上,而基板31与封装壳体34共同包覆发光单元32。发光单元32例如为发光二极管(LED)芯片,封装壳体35系藉由冲压成型方式所形成之一体固化之结构,封装壳体35系一透光封装壳体35,包含固化材料、高折射率物质、奈米导热材以及荧光材,而发光单元32或发光二极管单元34系经由固化材料中的荧光材,以对封装壳体35之外部出光。此外,参照第3A图,上述复数个冲压封装发光二极管装置30彼此还可以进一步电性连接,整合成一个发光二极管灯壳结构37。冲压封装发光二极管装置30之二条外接导电支架36可包含但不限于二导电支架(如图式中,两凸出部份为所述之二导电支架)。
参照图4A-4B,,其显示根据本发明再一实施例之冲压封装发光二极管装置40,包括发光二极管单元44,封装壳体45、二条外接导电支架46以及驱动电路47等部件。其中,如第4B图所示,冲压封装发光二极管装置40系一长条片状结构,其中包括复数个发光二极管单元44,每个发光二极管单元44包括基板41,发光单元42,以及二条导线43等部件。其中,基板41系一透光基板41,例如透明荧光树脂基板41或是透明荧光陶瓷基板41,其中还包含奈米导热材以及荧光材。发光单元42系设置于基板41上,而基板41与封装壳体44共同包覆发光单元42。发光单元42例如为发光二极管(LED)芯片,封装壳体45系藉由冲压成型方式所形成之一体固化之结构,封装壳体45系一透光封装壳体45,包含固化材料、高折射率物质、奈米导热材以及荧光材,而发光单元42或发光二极管单元44系经由固化材料中的荧光材,以对封装壳体45之外部出光。此外,请参照第4A图,复数个冲压封装发光二极管装置40彼此还可以进一步电性连接,整合成一个发光二极管灯具结构48,其还包括一灯座49,系用以电性连接冲压封装发光二极管装置40,以及电性耦接外部电源(未显示)。
本发明封装壳体24,35,45中包含之高折射率物质,占重量百分比5%~80%,系透过相对折射系数的调整与匹配,以达到提升封装材料之光安定性以及热安定性、降低荧光粉于封装材料中之散射损失、并增长发光二极管的使用寿命以及提升取光效率等目的。一般来说,发光二极管芯片折射率在2到4之间(nLED=2~4),远高于环氧树脂或硅胶封装材料之折射率,其在1.4到1.53之间(nPACKAGE=1.4~1.53),因此当芯片发光经过封装材料时,在其接口间发生全反射效应,造成大部分光线反射回芯片内部,无法有效导出光线,使亮度效能严重受损。因此,本发明即着眼在封装材料折射率的增加,以提供高折射率的透明封装材料,来缩小发光二极管芯片与封装材料的折射率差异。举例而言,环氧树脂的折射率为1.5,玻璃的折射率约1.55,只要在封装材中混合加入折射率大于1.5左右之高折射率物质,就可以达到本发明之目的。
请参考表1,其中举例列出折射率大于1.5左右之物质。
表1
根据上表1,本发明封装壳体24,35,45中包含之高折射率物质,可包含TiO2、Nb205、Ta205、ZrO2、Si、以及Gap之组合或其中之一。或是,除了上述组合以外,可更进一步包含Ge、InP、以及PbS之组合或其中之一。请参照表1,因TiO2、Nb2O5、Ta2O5、ZrO2、Si以及Gap较不会吸收可见光,且具有高折射率,是封装壳体24,35,45中可采用之极佳高折射率材料,至于Ge、InP、以及PbS等物质,其虽具有高折射率,但因容易吸收可见光,选用此类作为高折射率材料,须注意其尺径要小于50奈米(nm),以降低光的散射等对出光之影响。上述高折射率物质于壳体24,35,45中之比例较佳的是介于5%至70%之间,而其尺径较佳的是小于50奈米(nm),以降低光的散射等对出光之影响。
需注意得是,冲压封装发光二极管装置20,30,40或发光单元22,32,42之外型,不受限于图式中所显示之外型,可视使用者需要而做任何改变,只要符合本发明所揭露之技术范围内,其冲压封装发光二极管装置20,30,40或发光单元22,32,42之外型皆属于本发明之主张范围内。
一实施例中,上述基板21,31,41以及封装壳体24,35,45中的荧光材,可根据发光单元22,32,42之出光特性,选择不同之材料,以作出光演色性之调整等。举例而言,荧光材之材料可包含:红色荧光材、绿色荧光材、或橘色荧光材,其中荧光材之材料为铝酸盐系荧光材料(Aluminate)、硅酸盐系荧光材料(Silicate)、氮化物系荧光材料(Nitride)、以及氮氧化物系荧光材料(Oxynitride)之组合或其中之一。或是,荧光材之材料可包含一黄色荧光材,并选择性包含红色荧光材、绿色荧光材、或橘色荧光材,其中荧光材之材料为铝酸盐系荧光材料(Aluminate)、硅酸盐系荧光材料(Silicate)、氮化物系荧光材料(Nitride)、以及氮氧化物系荧光材料(Oxynitride)之组合或其中之一。其中不同荧光材之选择可根据色光演色需求,或根据发光单元22,32,42之出光特性而作不同之选择。
又,一实施例中,上述基板21,31,41以及封装壳体24,35,45中的奈米导热材,占重量百分比5%~80%,系用以提升封装壳体24,35,45之散热效率,较佳的是透明的有机或无机奈米粉、有机或无机奈米粒子之组合或其中之一。其中,无机奈米导热粒子,包含氧化铝奈米金属粒子或粉末、二氧化钛奈米金属粒子或粉末、复数个金属粒子、复数个金属氧化物粒子、复数个陶瓷粒子、以及复数个碳系粒子之组合或其中之一。如前所述,本发明之冲压封装发光二极管装置20,30,40系可360度四面八方全方位全角度发光,所用之材料须可透光或透明的,因此,前述奈米导热粒子之尺径限制,系为了达到避免产生遮光效果,造成封装壳体24,35,45中固化材料之透光率过度降低,使发光单元22,32,42之对外出光效率稍微降低之目的。前述之金属粒子可包含铜粒子、银粒子、或铝粒子。前述之金属氧化物粒子可包含氧化铝粒子或氧化锌粒子。前述之陶瓷粒子可包含氮化硼粒子、氮化铝粒子、碳化硅粒子、或奈米陶土粒子。前述之碳系粒子可包含石墨粒子、碳纤粒子、或奈米碳粒子。此外,奈米导热材于壳体24,35,45中之比例较佳的是介于5%至70%之间,包含复数个奈米导热粒子,其尺径较佳的是小于50奈米(nm),以降低光的散射等对出光之影响。
一实施例中,前述之壳体24,35,45中固化材料,又称为基底材料,占重量百分比10%~90%,可包含例如环氧树脂(Epoxy)或硅树脂(Siliane)等有机透明胶材,或是玻璃(例如硼硅玻璃、或蓝宝石玻璃等)、氧化陶瓷玻璃、或陶瓷等无机透明封装材等。举例而言,固化材料之组成,较佳的是包含环氧树脂(Epoxy)、双酚A系环氧树脂(Bisphenol AEpoxy)、脂环系环氧树脂(Cycloaliphatic-Epoxy)、聚硅氧烷改质环氧树脂(SiloxaneModified Epoxy Resin)、聚酸甲酯改质环氧树脂(Acrylic Modified Epoxy Resin)、有机改质环氧树脂(Organic Modified Epoxy Resin)、硅氧树脂(Silicone)、硅凝胶(SiliconeGel)、硅橡胶(Silicone Rubber)、聚硅氧烷树脂(Silicone Resin)、及有机改质聚硅氧烷树脂(Organic Modified Silicone Resin)、透明陶瓷材料之组合或其中之一。
由上可知,本发明之冲压封装发光二极管装置20,30,40出光效率优于先前技术,其出光/输入电源比值,可例如介于150lm/W(流明)至200lm/W(流明),或另一更佳之效率例如达300lm/W以上。此外,本发明之冲压封装发光二极管装置20,30,40之设计,具有360度环场出光之效果,可真正地四面八方全方位发光,而不是如习知般有部分出光角度被不透光之基底或反射层所局限。更进一步,本发明之冲压封装发光二极管装置20,30,40可直接将热藉由辐射至外部环境,因此具有极佳之散热效果,可大幅提升使用寿命。
一实施例中,封装壳体24,35,45之表面可涂布一石墨烯材料(未显示),此涂布可增加封装壳体24,35,45之散热与出光效率。
参照图5,本发明提供一种冲压封装发光二极管装置的制造流程方块图,包含:步骤S1:提供复数个发光单元及一封装材,各发光单元例如是发光二极管,而封装材系包含可固化环氧树脂胶水、荧光粉混光材料、奈米散热粉填充物、以及高折射率物质等;步骤S2:提供一成型模,以供冲压成型之用,此成型模有对应于一封装壳体形状之一空腔;步骤S3:将该发光单元设置于空腔内之特定位置,而该封装材料包覆住该发光单元,亦即,进行包括浸润封装胶及过筛等步骤;步骤S4:冲制成型:将该发光单元与该封装材料设入连续冲压成型机内冲压成型,以形成一发光二极管成品(如第2B、3B、或4B图所示),例如为具一定长度之长条状的发光二极管成品(如第3B或4B图所示);步骤S5:进行陶化步骤,温度范围在400℃~900℃之间,将该封装材料中所含的物质充分均匀地黏结融合;步骤S6:浸泡一树脂,以填满冲压成型后的空隙,例如进行真空浸润,以达到零空隙之目的,其中,该树脂可以选用热固化型的环氧树脂,或是热固化型的硅树脂;步骤S7:进行退火及后烤等固化步骤:用以稳定固形及释放应力,使得该封装材料能够完全固化并包覆固定住该发光单元,例如在120℃之温度下,进行时间约1小时左右;步骤S8:后续处理:对长条状发光二极管成品进行玻璃包覆、防锈表面处理或其它后续加工处理。其中,上述S5陶化步骤进行的时间点或先后顺序,并不限定于S4冲制成型步骤之后,也可以安排在S4冲制成型步骤之前,或是在S7退火固化步骤之前即可,甚至,上述S5陶化步骤进行的次数可以不限定一次,而可以进行复数次,举例而言,在上述S4冲制成型步骤之后、S4冲制成型步骤之前、以及S7退火固化步骤之前等时间点均可进行。
本发明之冲压封装发光二极管装置,具有可360度四面八方全方位全角度出光、光通量高、散热又好、制程简易,大幅提升生产的良率与速度等优点。此外,本发明产生的热直接由封装壳体表面辐射至空气中,更无须如习知需再覆盖或加上其它散热片等结构,且因同质一体荧光复合树脂整合成型,所以光色温均匀无光影、暗区现象。
值得注意的是,本发明冲压封装发光二极管装置,因为封装壳体24,35,45中具有高折射率物质,且以冲压方式有效成型,使得本发明冲压封装发光二极管装置所发出的光谱,不同于习知白光发光二极管的光谱,而有类似太阳光谱之效果,此为发光二极管之一大跃进。如图6,上方的光谱图系为本发明冲压封装发光二极管装置所产生之光谱图,其中横轴代表的是波长,单位为nm,而纵轴代表的是分光放射照度,单位为W/m2/nm,可以看到的是,从紫外线、可见光区到红外线区,照度呈现均匀的分布情形,无任何的波谷区或光谱下陷区,亦无任何的突兀的波峯区或光谱突出区,具有类太阳光谱之效果。请同时参照下方的光谱图,其系为习知发光二极管所产生之光谱图,可以看到的是,从紫外线、可见光区到红外线区,照度呈现不均匀的分布情形,在波长约350nm处有一突出的波峯区,在波长约480nm处有一凹陷之波谷区,以及在波长约600nm处有另一突出的波峯区。
本发明之优点为,发光单元22,32,42所产生之热,可藉由发光单元22,32,42与封装壳体24,35,45之直接接触,直接由热传导及热辐射方式散热至空气或周遭环境中,故散热效率远高于习知技术。此外,藉由发光单元32,42与封装壳体35,45之直接接触,发光二极管灯壳结构37与发光二极管灯具结构48系对外直接出光,不会受到习知技术之灯罩或灯壳的减损,因此对外出光效果亦优于习知技术。又,因发光单元22,32,42之出光路径,未如先前技术般经过多个不同折射率材质之路径与过程,本发明出光路径仅经由同一类似材质,且出光路径短于先前技术,因此对外出光效果极佳。
此外,本发明之基板21,31,41以及封装壳体24,35,45系具有可透光性,或透明、半透明的性质,因此,冲压封装发光二极管装置20,30,40系可360度四面八方全方位全角度出光。
又,本发明因系使用上述固化材料,因此具有耐酸碱、耐冷热冲击、防尘、防锈、耐磨耗性、耐重压、以及防水性高等优点。此外,本发明因直接对外出光,直接接触大空间环境,无散热隔热屏障,因此散热性极佳,无习知LED灯中心发热,热会聚积在发光单元范围内等缺点。更进一步,本发明之荧光粉混光无遮蔽性,因此显色指数可达95以上类太阳光,如图6所示。
以上所述,仅是本发明较佳实施例而已,并非对本发明的技术范围作任何限制,故凡是依据本发明的技术实质对以上实例所作的任何细微修改,等同变化与修饰,均仍属于本发明技术方案的范围内。
Claims (10)
1.一种冲压封装发光二极管装置,其特征在于包括:
一发光单元,设置在该基板的表面上;
二条导线,分别连接该发光单元;以及
一封装材,系藉由冲压成型方式所形成之一体封装结构,以覆盖该等导线及该发光单元,该封装材包含一固化材料、一高折射率物质、一奈米导热材以及一荧光材;
其中,该发光单元所发出之光系经过该封装材,以直接对外部出光。
2.根据权利要求1所述的冲压封装发光二极管装置,其特征在于:该奈米导热材包含氧化铝奈米金属粒子或粉末、有机或无机奈米粉、有机或无机奈米粒子、复数个金属粒子、复数个金属氧化物粒子、复数个陶瓷粒子、复数个碳系粒子、或其中之任一组合。
3.根据权利要求1所述的冲压封装发光二极管装置,其特征在于:该高折射率物质包含TiO2、Nb2O5、Ta2O5、ZrO2、Si、Gap、Ge、InP、PbS、或其中之任一组合。
4.根据权利要求1所述的冲压封装发光二极管装置,其特征在于:该荧光材包含:黄色荧光材、红色荧光材、绿色荧光材、或橘色荧光材,而该第一荧光材以及该第二荧光材之材料为铝酸盐系荧光材料(Aluminate)、硅酸盐系荧光材料(Silicate)、氮化物系荧光材料(Nitride)、氮氧化物系荧光材料(Oxynitride)、或其中之任一组合。
5.一种冲压封装发光二极管装置,其特征在于包括:
复数个发光二极管单元,包含:
一发光单元;
二条导线,分别连接该发光单元;以及
一封装材,系藉由冲压成型方式所形成之一体封装结构,以覆盖该等导线及该发光单元,该封装材包含一固化材料、一高折射率物质、一奈米导热材以及一荧光材;
其中,该些发光二极管单元所发出之光系经过该封装材,以直接对外部出光。
6.根据权利要求5所述的冲压封装发光二极管装置,其特征在于:该奈米导热材包含氧化铝奈米金属粒子或粉末、有机或无机奈米粉、有机或无机奈米粒子、复数个金属粒子、复数个金属氧化物粒子、复数个陶瓷粒子、复数个碳系粒子、或其中之任一组合。
7.根据权利要求5所述的冲压封装发光二极管装置,其特征在于:该高折射率物质包含TiO2、Nb2O5、Ta2O5、ZrO2、Si、Gap、Ge、InP、PbS、或其中之任一组合。
8.一种制备如申请专利范围第1项所述之冲压封装发光二极管的方法,其特征在于:
提供复数个发光单元及一封装材,该封装材系包含一固化材料、一荧光粉混光材料、一奈米散热材料、以及一高折射率物质;
提供一成型模,具有对应于一封装壳体形状之一空腔;
将该发光单元设置于该空腔内之一特定位置,而该封装材包覆住该发光单元;
进行冲制成型步骤,将该发光单元与该封装材设入连续冲压成型机内冲压成型;
进行一浸泡树脂,以填满冲压成型后的空隙;以及
进行一后处理步骤,包括以对该发光二极管成品进行后续再加工处理。
9.根据权利要求8所述的冲压封装发光二极管的制备方法,其特征在于:该高折射率物质包含TiO2、Nb2O5、Ta2O5、ZrO2、Si、Gap、Ge、InP、PbS、或其中之任一组合。
10.根据权利要求8所述的冲压封装发光二极管的制备方法,其特征在于:在冲制成型步骤之前或之后,还包括一陶化步骤,温度范围在400℃~900℃之间,将该封装材料中所含的物质充分均匀地黏结融合。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710556365.6A CN109244211A (zh) | 2017-07-10 | 2017-07-10 | 冲压封装发光二极管装置及其制造方法 |
US16/016,608 US10453831B2 (en) | 2017-07-10 | 2018-06-24 | Punching packaged light-emitting diode apparatus and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710556365.6A CN109244211A (zh) | 2017-07-10 | 2017-07-10 | 冲压封装发光二极管装置及其制造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109244211A true CN109244211A (zh) | 2019-01-18 |
Family
ID=64903862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710556365.6A Pending CN109244211A (zh) | 2017-07-10 | 2017-07-10 | 冲压封装发光二极管装置及其制造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10453831B2 (zh) |
CN (1) | CN109244211A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111244248A (zh) * | 2020-01-17 | 2020-06-05 | 盐城东山精密制造有限公司 | 一种增大出光角度的led封装器件及显示应用 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11342311B2 (en) * | 2019-03-18 | 2022-05-24 | Intematix Corporation | LED-filaments and LED-filament lamps utilizing manganese-activated fluoride red photoluminescence material |
CN113841238A (zh) | 2019-03-18 | 2021-12-24 | 英特曼帝克司公司 | Led灯丝 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101817807B1 (ko) * | 2011-09-20 | 2018-01-11 | 엘지이노텍 주식회사 | 발광소자 패키지 및 이를 포함하는 조명시스템 |
JP6147977B2 (ja) * | 2012-09-26 | 2017-06-14 | ローム株式会社 | Led照明器具およびledユニット |
KR101888608B1 (ko) * | 2014-10-17 | 2018-09-20 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 조명 장치 |
US10219345B2 (en) * | 2016-11-10 | 2019-02-26 | Ledengin, Inc. | Tunable LED emitter with continuous spectrum |
-
2017
- 2017-07-10 CN CN201710556365.6A patent/CN109244211A/zh active Pending
-
2018
- 2018-06-24 US US16/016,608 patent/US10453831B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111244248A (zh) * | 2020-01-17 | 2020-06-05 | 盐城东山精密制造有限公司 | 一种增大出光角度的led封装器件及显示应用 |
CN111244248B (zh) * | 2020-01-17 | 2021-09-10 | 盐城东山精密制造有限公司 | 一种增大出光角度的led封装器件及显示应用 |
Also Published As
Publication number | Publication date |
---|---|
US10453831B2 (en) | 2019-10-22 |
US20190013304A1 (en) | 2019-01-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3091911U (ja) | ハイブリッドled | |
CN104595852B (zh) | 一种波长转换装置、漫反射层、光源系统及投影系统 | |
CN103797597B (zh) | 发光模块、灯、照明器和显示装置 | |
US7259400B1 (en) | Nanocomposite photonic structures for solid state lighting | |
TWI312202B (zh) | ||
CN104282819B (zh) | 倒装式发光二极管封装模块及其制造方法 | |
CN104600178B (zh) | 发光二极管封装结构及其制造方法 | |
CN204333010U (zh) | 发光元件封装结构 | |
CN201539737U (zh) | 一种led灯具 | |
TWI497750B (zh) | 具獨立光胞之發光元件陣列 | |
CN102227012A (zh) | 一种色温均匀的高显色性能白光led | |
CN109244211A (zh) | 冲压封装发光二极管装置及其制造方法 | |
CN108365075A (zh) | 具有斜面晶片反射结构的晶片级封装发光装置及其制造方法 | |
CN102844896A (zh) | Led热量和光子提取装置 | |
TW200905925A (en) | Side-view light-emitting diode package and fabrication method thereof | |
CN108091752A (zh) | 一种白光led及其制备方法 | |
CN107910426B (zh) | 一种磁性荧光粉复合材料及其平面涂覆方法 | |
TW200805694A (en) | Light-emitting component and manufacturing method thereof | |
CN104953010A (zh) | 一种led发光模组 | |
CN104037302B (zh) | 一种led封装组件 | |
CN107706289B (zh) | 量子点led及其制备方法 | |
CN104900781B (zh) | 发光装置 | |
CN209558056U (zh) | Led光源模块及灯具 | |
CN101355132B (zh) | 一种改善光斑的白光led的封装方法 | |
CN203386790U (zh) | 一种色温均匀的高显色性能白光led |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190118 |
|
WD01 | Invention patent application deemed withdrawn after publication |