JP7282728B2 - Nand型フラッシュメモリおよびその製造方法 - Google Patents
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- JP7282728B2 JP7282728B2 JP2020170882A JP2020170882A JP7282728B2 JP 7282728 B2 JP7282728 B2 JP 7282728B2 JP 2020170882 A JP2020170882 A JP 2020170882A JP 2020170882 A JP2020170882 A JP 2020170882A JP 7282728 B2 JP7282728 B2 JP 7282728B2
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- 230000015654 memory Effects 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000010410 layer Substances 0.000 claims description 140
- 239000012212 insulator Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 22
- 239000011229 interlayer Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 20
- 229920005591 polysilicon Polymers 0.000 description 20
- 239000000463 material Substances 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
Description
110:下部絶縁層
120:チャンネルスタック
130:垂直ゲート
140:層間絶縁膜
150:ビット線
152:コンタクトホール
154:導電性プラグ
160:共通ソース線
162:コンタクトホール
164:導電性プラグ
170:絶縁層
180:トレンチ
190:絶縁体スタック
200:エッチングマスク
210:開口
S1:第1の側面、S2:第2の側面
Claims (8)
- 第1の絶縁層とチャンネル層とを交互に積層した複数のチャンネル積層体を基板上に形成するステップであって、当該チャンネル積層体は、前記第1の絶縁層および前記チャンネル層を露出させる第1の側面と当該第1の側面に対向する前記第1の絶縁層および前記チャンネル層を露出させる第2の側面とを有し、複数の平行な第1および第2の側面が第1の方向に延在する、前記ステップと、
前記複数のチャンネル積層体のそれぞれの第1の側面と第2の側面との間の間隙を充填するように第2の絶縁層を形成するステップと、
前記第2の絶縁層の第1の方向に一定のピッチで平面視が矩形状の複数のトレンチを形成するステップであって、当該トレンチの内壁は、前記第1の側面、前記第2の側面および前記第2の絶縁層によって囲まれる、前記ステップと、
少なくとも各トレンチの前記内壁を覆うように、電荷蓄積層を含む絶縁体を形成し、前記トレンチ内に前記絶縁体によって囲まれた内部空間を形成するステップと、
前記第1の方向と直交する第2の方向の各トレンチ内の前記内部空間を充填するように前記第2の方向に延在する複数のゲートを形成するステップと、
前記チャンネル積層体の各チャンネル層の一方の端部にそれぞれ電気的に接続される複数のビット線を形成するステップであって、各ビット線は、各チャンネル積層体と平行に各チャンネル積層体の真上を前記第1の方向に延在するようにパターニングされる、前記ビット線を形成するステップと、
前記第2の方向に延在し、かつ前記チャンネル積層体の各チャンネル層の他方の端部に電気的に共通に接続されるソース線を形成するステップと、
を有するNAND型フラッシュメモリの製造方法。 - 前記ゲートは、前記トレンチ内を基板から垂直方向に延在し、かつ前記絶縁体によって包囲される、請求項1に記載の製造方法。
- 前記ゲートは、前記トレンチ内において、前記絶縁体を介して隣接するチャンネル積層体の第1の側面および第2の側面を覆う、請求項1または2に記載の製造方法。
- 前記トレンチを形成するステップは、前記チャンネル積層体の第1および第2の側面の少なくとも最上層のチャンネル層から最下層のチャンネル層まで露出させる、請求項1に記載の製造方法。
- 前記トレンチを形成するステップは、エッチングマスクを介して前記複数のチャンネル積層体の間に形成された前記第2の絶縁層の一部を除去する、請求項1に記載の製造方法。
- 前記ソース線は、前記複数のチャンネル積層体上の層間絶縁膜上に形成され、前記複数のビット線は、前記ソース線上の層間絶縁膜上に形成される、請求項1に記載の製造方法。
- 前記ビット線を形成するステップは、前記チャンネル積層体の一方の端部に形成された最上層のチャンネル層から最下層のチャンネル層に至るコンタクトホール内に導電性プラグを形成することを含み、前記ソース線を形成するステップは、前記チャンネル積層体の他方の端部に形成された最上層のチャンネル層から最下層のチャンネル層に至るコンタクトホール内に導電性プラグを形成することを含む、請求項1に記載の製造方法。
- 製造方法はさらに、交互に積層されたチャンネル層と第1の絶縁層とを前記基板上に形成するステップと、
前記積層されたチャンネル層と前記第1の絶縁層とをエッチングによりパターニングし、複数のフィン状のチャンネル積層体を形成するステップとを含む、請求項1に記載の製造方法。
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JP2020170882A JP7282728B2 (ja) | 2020-10-09 | 2020-10-09 | Nand型フラッシュメモリおよびその製造方法 |
TW110129379A TWI767818B (zh) | 2020-10-09 | 2021-08-10 | Nand型快閃記憶體及其製造方法 |
KR1020210118209A KR102627048B1 (ko) | 2020-10-09 | 2021-09-06 | Nand형 플래쉬 메모리 및 그 제조 방법 |
CN202111041855.5A CN114334997A (zh) | 2020-10-09 | 2021-09-07 | 与非型闪速存储器及其制造方法 |
US17/489,826 US20220115400A1 (en) | 2020-10-09 | 2021-09-30 | Nand flash memory and manufacturing method thereof |
JP2023028387A JP2023062202A (ja) | 2020-10-09 | 2023-02-27 | Nand型フラッシュメモリおよびその製造方法 |
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Citations (3)
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JP2008078404A (ja) | 2006-09-21 | 2008-04-03 | Toshiba Corp | 半導体メモリ及びその製造方法 |
JP2009238874A (ja) | 2008-03-26 | 2009-10-15 | Toshiba Corp | 半導体メモリ及びその製造方法 |
JP2013016781A (ja) | 2011-06-23 | 2013-01-24 | Micronics Internatl Co Ltd | メモリストリングにダイオードを有する3次元アレイのメモリアーキテクチャ |
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WO1996005385A1 (en) * | 1994-08-12 | 1996-02-22 | Techtruss Holdings Pty. Ltd. | Structural beam and web |
US8569829B2 (en) * | 2009-12-28 | 2013-10-29 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US20180350685A1 (en) | 2011-06-28 | 2018-12-06 | Monolithic 3D Inc. | 3d semiconductor device and system |
US9123778B2 (en) * | 2013-03-13 | 2015-09-01 | Macronix International Co., Ltd. | Damascene conductor for 3D array |
US9236127B2 (en) | 2013-10-11 | 2016-01-12 | Conversant Intellectual Property Management Inc. | Nonvolatile semiconductor memory device |
US9147468B1 (en) * | 2014-05-21 | 2015-09-29 | Macronix International Co., Ltd. | Multiple-bit-per-cell, independent double gate, vertical channel memory |
US20160118404A1 (en) | 2014-10-09 | 2016-04-28 | Haibing Peng | Three-dimensional non-volatile ferroelectric random access memory |
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JP2008078404A (ja) | 2006-09-21 | 2008-04-03 | Toshiba Corp | 半導体メモリ及びその製造方法 |
JP2009238874A (ja) | 2008-03-26 | 2009-10-15 | Toshiba Corp | 半導体メモリ及びその製造方法 |
JP2013016781A (ja) | 2011-06-23 | 2013-01-24 | Micronics Internatl Co Ltd | メモリストリングにダイオードを有する3次元アレイのメモリアーキテクチャ |
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JP2022062762A (ja) | 2022-04-21 |
TWI767818B (zh) | 2022-06-11 |
TW202215646A (zh) | 2022-04-16 |
KR20220047506A (ko) | 2022-04-18 |
US20220115400A1 (en) | 2022-04-14 |
KR102627048B1 (ko) | 2024-01-19 |
JP2023062202A (ja) | 2023-05-02 |
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