JP7257883B2 - プラズマ処理方法およびプラズマ処理装置 - Google Patents

プラズマ処理方法およびプラズマ処理装置 Download PDF

Info

Publication number
JP7257883B2
JP7257883B2 JP2019097691A JP2019097691A JP7257883B2 JP 7257883 B2 JP7257883 B2 JP 7257883B2 JP 2019097691 A JP2019097691 A JP 2019097691A JP 2019097691 A JP2019097691 A JP 2019097691A JP 7257883 B2 JP7257883 B2 JP 7257883B2
Authority
JP
Japan
Prior art keywords
layer
plasma processing
film
recess
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019097691A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020025078A5 (https=
JP2020025078A (ja
Inventor
雅弘 田端
翔 熊倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN201910660252.XA priority Critical patent/CN110783187B/zh
Priority to TW108125906A priority patent/TWI841579B/zh
Priority to KR1020190089863A priority patent/KR102799170B1/ko
Priority to US16/521,080 priority patent/US11239090B2/en
Publication of JP2020025078A publication Critical patent/JP2020025078A/ja
Priority to US17/560,228 priority patent/US12308241B2/en
Publication of JP2020025078A5 publication Critical patent/JP2020025078A5/ja
Application granted granted Critical
Publication of JP7257883B2 publication Critical patent/JP7257883B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Plasma Technology (AREA)
JP2019097691A 2018-07-25 2019-05-24 プラズマ処理方法およびプラズマ処理装置 Active JP7257883B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN201910660252.XA CN110783187B (zh) 2018-07-25 2019-07-22 等离子体处理方法和等离子体处理装置
TW108125906A TWI841579B (zh) 2018-07-25 2019-07-23 電漿處理方法及電漿處理裝置
KR1020190089863A KR102799170B1 (ko) 2018-07-25 2019-07-24 플라즈마 처리 방법 및 플라즈마 처리 장치
US16/521,080 US11239090B2 (en) 2018-07-25 2019-07-24 Plasma processing method and plasma processing apparatus
US17/560,228 US12308241B2 (en) 2018-07-25 2021-12-22 Plasma processing method and plasma processing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018139450 2018-07-25
JP2018139450 2018-07-25

Publications (3)

Publication Number Publication Date
JP2020025078A JP2020025078A (ja) 2020-02-13
JP2020025078A5 JP2020025078A5 (https=) 2022-05-31
JP7257883B2 true JP7257883B2 (ja) 2023-04-14

Family

ID=69619505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019097691A Active JP7257883B2 (ja) 2018-07-25 2019-05-24 プラズマ処理方法およびプラズマ処理装置

Country Status (2)

Country Link
JP (1) JP7257883B2 (https=)
TW (1) TWI841579B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11417527B2 (en) * 2020-08-28 2022-08-16 Tokyo Electron Limited Method and device for controlling a thickness of a protective film on a substrate
KR102366555B1 (ko) * 2021-01-05 2022-02-23 주식회사 이지티엠 핵성장 지연을 이용한 영역 선택적 박막 형성 방법
US20230154753A1 (en) * 2021-11-17 2023-05-18 Taiwan Semiconductor Manufacturing Co., Ltd. Patterned Semiconductor Device and Method
JP2023118554A (ja) * 2022-02-15 2023-08-25 東京エレクトロン株式会社 シリコン窒化膜の形成方法及び成膜装置
WO2024243318A1 (en) * 2023-05-25 2024-11-28 Lam Research Corporation Cyclic etching and deposition to control film profile
WO2026038303A1 (ja) * 2024-08-13 2026-02-19 東京エレクトロン株式会社 エッチング方法及び処理システム

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005213632A (ja) 2004-02-02 2005-08-11 Nec Electronics Corp 成膜方法
JP2008198659A (ja) 2007-02-08 2008-08-28 Tokyo Electron Ltd プラズマエッチング方法
JP2008305921A (ja) 2007-06-06 2008-12-18 Panasonic Corp 半導体装置及びその製造方法
JP2011054742A (ja) 2009-09-01 2011-03-17 Tokyo Electron Ltd 成膜装置及び成膜方法
JP2014017438A (ja) 2012-07-11 2014-01-30 Tokyo Electron Ltd パターン形成方法及び基板処理システム
JP2016181630A (ja) 2015-03-24 2016-10-13 株式会社東芝 パターン形成方法
JP2017005013A (ja) 2015-06-05 2017-01-05 東京エレクトロン株式会社 半導体装置の製造方法
JP2018037453A (ja) 2016-08-29 2018-03-08 東京エレクトロン株式会社 被処理体を処理する方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1041389A (ja) * 1996-07-24 1998-02-13 Sony Corp 半導体装置の製造方法
US7829465B2 (en) * 2006-08-09 2010-11-09 Shouliang Lai Method for plasma etching of positively sloped structures
US8574447B2 (en) * 2010-03-31 2013-11-05 Lam Research Corporation Inorganic rapid alternating process for silicon etch
US8999783B2 (en) * 2013-02-06 2015-04-07 Infineon Technologies Austria Ag Method for producing a semiconductor device with a vertical dielectric layer

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005213632A (ja) 2004-02-02 2005-08-11 Nec Electronics Corp 成膜方法
JP2008198659A (ja) 2007-02-08 2008-08-28 Tokyo Electron Ltd プラズマエッチング方法
JP2008305921A (ja) 2007-06-06 2008-12-18 Panasonic Corp 半導体装置及びその製造方法
JP2011054742A (ja) 2009-09-01 2011-03-17 Tokyo Electron Ltd 成膜装置及び成膜方法
JP2014017438A (ja) 2012-07-11 2014-01-30 Tokyo Electron Ltd パターン形成方法及び基板処理システム
JP2016181630A (ja) 2015-03-24 2016-10-13 株式会社東芝 パターン形成方法
JP2017005013A (ja) 2015-06-05 2017-01-05 東京エレクトロン株式会社 半導体装置の製造方法
JP2018037453A (ja) 2016-08-29 2018-03-08 東京エレクトロン株式会社 被処理体を処理する方法

Also Published As

Publication number Publication date
TW202011481A (zh) 2020-03-16
TWI841579B (zh) 2024-05-11
JP2020025078A (ja) 2020-02-13

Similar Documents

Publication Publication Date Title
CN110783187B (zh) 等离子体处理方法和等离子体处理装置
JP7257883B2 (ja) プラズマ処理方法およびプラズマ処理装置
JP7728376B2 (ja) プラズマ処理装置および基板処理装置
TWI871361B (zh) 藉由循環電漿增強型沉積製程形成地形選擇性氧化矽膜之方法
CN108573866B (zh) 氧化膜去除方法和装置以及接触部形成方法和系统
CN108878285B (zh) 蚀刻方法
JP2017208469A (ja) 酸化膜除去方法および除去装置、ならびにコンタクト形成方法およびコンタクト形成システム
TWI766866B (zh) 蝕刻方法
US12074009B2 (en) Apparatus for processing a substrate
JP2018148193A (ja) 酸化膜除去方法および除去装置、ならびにコンタクト形成方法およびコンタクト形成システム
JP2022138115A (ja) エッチング方法
TW202002014A (zh) 基板處理方法及基板處理裝置
JP7071850B2 (ja) エッチング方法
US12476115B2 (en) Method for processing workpiece
WO2007052534A1 (ja) エッチング方法及びエッチング装置
TWI919367B (zh) 於低溫下蝕刻含碳特徵之方法
US20250299962A1 (en) Method for etching a layer through a patterned mask layer
TW202439438A (zh) 蝕刻高深寬比結構的方法
JP2009260092A (ja) 多層レジスト膜のドライエッチング方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220523

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220523

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230307

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20230309

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230404

R150 Certificate of patent or registration of utility model

Ref document number: 7257883

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250