TWI841579B - 電漿處理方法及電漿處理裝置 - Google Patents
電漿處理方法及電漿處理裝置 Download PDFInfo
- Publication number
- TWI841579B TWI841579B TW108125906A TW108125906A TWI841579B TW I841579 B TWI841579 B TW I841579B TW 108125906 A TW108125906 A TW 108125906A TW 108125906 A TW108125906 A TW 108125906A TW I841579 B TWI841579 B TW I841579B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- film
- substrate
- concave portion
- plasma treatment
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 192
- 238000003672 processing method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 238000005530 etching Methods 0.000 claims abstract description 60
- 239000003112 inhibitor Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 140
- 239000007789 gas Substances 0.000 claims description 125
- 230000008569 process Effects 0.000 claims description 91
- 230000005764 inhibitory process Effects 0.000 claims description 73
- 238000009832 plasma treatment Methods 0.000 claims description 46
- 238000005229 chemical vapour deposition Methods 0.000 claims description 26
- 239000002243 precursor Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000009833 condensation Methods 0.000 claims description 14
- 230000005494 condensation Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 239000012495 reaction gas Substances 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 40
- 239000010410 layer Substances 0.000 description 196
- 238000010586 diagram Methods 0.000 description 36
- 239000011241 protective layer Substances 0.000 description 33
- 238000000231 atomic layer deposition Methods 0.000 description 31
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000009826 distribution Methods 0.000 description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 229920006254 polymer film Polymers 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000001629 suppression Effects 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000002094 self assembled monolayer Substances 0.000 description 2
- 239000013545 self-assembled monolayer Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-139450 | 2018-07-25 | ||
| JP2018139450 | 2018-07-25 | ||
| JP2019-097691 | 2019-05-24 | ||
| JP2019097691A JP7257883B2 (ja) | 2018-07-25 | 2019-05-24 | プラズマ処理方法およびプラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202011481A TW202011481A (zh) | 2020-03-16 |
| TWI841579B true TWI841579B (zh) | 2024-05-11 |
Family
ID=69619505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108125906A TWI841579B (zh) | 2018-07-25 | 2019-07-23 | 電漿處理方法及電漿處理裝置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7257883B2 (https=) |
| TW (1) | TWI841579B (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11417527B2 (en) * | 2020-08-28 | 2022-08-16 | Tokyo Electron Limited | Method and device for controlling a thickness of a protective film on a substrate |
| KR102366555B1 (ko) * | 2021-01-05 | 2022-02-23 | 주식회사 이지티엠 | 핵성장 지연을 이용한 영역 선택적 박막 형성 방법 |
| US20230154753A1 (en) * | 2021-11-17 | 2023-05-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Patterned Semiconductor Device and Method |
| JP2023118554A (ja) * | 2022-02-15 | 2023-08-25 | 東京エレクトロン株式会社 | シリコン窒化膜の形成方法及び成膜装置 |
| WO2024243318A1 (en) * | 2023-05-25 | 2024-11-28 | Lam Research Corporation | Cyclic etching and deposition to control film profile |
| WO2026038303A1 (ja) * | 2024-08-13 | 2026-02-19 | 東京エレクトロン株式会社 | エッチング方法及び処理システム |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080061029A1 (en) * | 2006-08-09 | 2008-03-13 | Shouliang Lai | Method for Plasma Etching of Positively Sloped Structures |
| US20110244686A1 (en) * | 2010-03-31 | 2011-10-06 | Lam Research Corporation | Inorganic rapid alternating process for silicon etch |
| US20140220758A1 (en) * | 2013-02-06 | 2014-08-07 | Infineon Technologies Austria Ag | Method for Producing a Semiconductor Device with a Vertical Dielectric Layer |
| TW201820460A (zh) * | 2016-08-29 | 2018-06-01 | 日商東京威力科創股份有限公司 | 被處理體之處理方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1041389A (ja) * | 1996-07-24 | 1998-02-13 | Sony Corp | 半導体装置の製造方法 |
| JP4537721B2 (ja) * | 2004-02-02 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | 成膜方法 |
| JP2008198659A (ja) * | 2007-02-08 | 2008-08-28 | Tokyo Electron Ltd | プラズマエッチング方法 |
| JP2008305921A (ja) * | 2007-06-06 | 2008-12-18 | Panasonic Corp | 半導体装置及びその製造方法 |
| JP5444961B2 (ja) * | 2009-09-01 | 2014-03-19 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
| JP6001940B2 (ja) * | 2012-07-11 | 2016-10-05 | 東京エレクトロン株式会社 | パターン形成方法及び基板処理システム |
| JP6346115B2 (ja) * | 2015-03-24 | 2018-06-20 | 東芝メモリ株式会社 | パターン形成方法 |
| JP6367151B2 (ja) * | 2015-06-05 | 2018-08-01 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
-
2019
- 2019-05-24 JP JP2019097691A patent/JP7257883B2/ja active Active
- 2019-07-23 TW TW108125906A patent/TWI841579B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080061029A1 (en) * | 2006-08-09 | 2008-03-13 | Shouliang Lai | Method for Plasma Etching of Positively Sloped Structures |
| US20110244686A1 (en) * | 2010-03-31 | 2011-10-06 | Lam Research Corporation | Inorganic rapid alternating process for silicon etch |
| US20140220758A1 (en) * | 2013-02-06 | 2014-08-07 | Infineon Technologies Austria Ag | Method for Producing a Semiconductor Device with a Vertical Dielectric Layer |
| TW201820460A (zh) * | 2016-08-29 | 2018-06-01 | 日商東京威力科創股份有限公司 | 被處理體之處理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202011481A (zh) | 2020-03-16 |
| JP7257883B2 (ja) | 2023-04-14 |
| JP2020025078A (ja) | 2020-02-13 |
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