JP7256123B2 - 構成部材を備えた固体層を薄くするための方法 - Google Patents
構成部材を備えた固体層を薄くするための方法 Download PDFInfo
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- JP7256123B2 JP7256123B2 JP2019531275A JP2019531275A JP7256123B2 JP 7256123 B2 JP7256123 B2 JP 7256123B2 JP 2019531275 A JP2019531275 A JP 2019531275A JP 2019531275 A JP2019531275 A JP 2019531275A JP 7256123 B2 JP7256123 B2 JP 7256123B2
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Description
6HCl+2Al+12H2O→2[AlCl3 *6H2O]+3H2
4 固体層
5 表面
8 剥離面
9 改質部
150 構成部材
Claims (19)
- 少なくとも1つの固体(1)から少なくとも1つの固体層(4)を分離するための方法であって、剥離面(8)を形成するために、レーザー光線によって前記固体(1)の内部に複数の改質部(9)を生成することと、
前記複数の改質部(9)を生成した後に、前記固体(1)の最初から露出していた表面(5)上にまたはこの表面の上方に、層および/または構成部材(150)を配置または生成することによって複合構造体を生成することとを有し、この場合露出した前記表面(5)が分離すべき前記固体層(4)の構成部分であり、
さらに、前記固体(1)内に応力を発生するために前記固体(1)に外力を加えることを有し、この場合外力は、応力が前記剥離面(8)に沿った亀裂が始まるような強さであり、
前記外力を加えることが、
前記応力が機械的に発生するように、ポリマー材料を含む受容層(140)を冷却し、前記層及び/または構成部材(150)上に、当てることと、
前記受容層(140)の前記ポリマー材料がガラス転移を終えて、前記機械的に発生した応力によって前記固体(1)内の亀裂が前記剥離面(8)に沿って広がって、前記亀裂が前記固体層(4)を、前記層および/または構成部材(150)と共に前記固体(1)から分離するように、前記受容層(140)を周囲温度よりも低い温度に冷却することと、を含む方法。 - 前記受容層(140)が、-130°C~0°Cのガラス転移を有するポリマー材料を、または、中に充填材を有するポリマーマトリックスを形成するポリマーハイブリッド材料を、含む、請求項1に記載の方法。
- 霧化された窒素、窒素浴(178)、または、窒素噴霧により、前記受容層(140)を-130~-10°Cの温度に冷却する、請求項1に記載の方法。
- 前記複合構造体の露出した層または露出した前記構成部材(150)上に安定化層(142)を形成することをさらに含み、前記安定化層(142)が前記複合構造体の露出した前記層または露出した前記構成部材(150)の機械的な応力から生じる変形を制限する、請求項1に記載の方法。
- 前記安定化層(142)がセラミックス材料および/またはポリマー材料を含む、請求項4に記載の方法。
- 前記安定化層(142)がインサイチュで生成されるかまたはフィルムとして提供される、および/または、前記安定化層(142)が前記露出した層または前記露出した構成部材(150)を包む、および/または、前記安定化層(142)が溶剤を塗布することによってまたは溶剤に浸漬することによって前記露出した層または前記露出した構成部材(150)から除去される、請求項4に記載の方法。
- 前記安定化層(142)がガラスウェハであるか、または、ガラスウェハが前記安定化層(142)上に配置されている、請求項4に記載の方法。
- 前記剥離面(8)の発生前に、70°Cと、前記固体(1)の溶融温度または蒸発温度との間の温度で実施される高温方法を使用して、前記固体(1)を処理することをさらに含み、
前記高温方法がエピタキシャル成長方法、ドープ方法またはプラズマを用いた方法であり、
前記高温方法によって、少なくとも1つの層(145)が前記固体(1)上に生成され、
生成された前記少なくとも1つの層(145)の前記レーザー光線のレーザー光波の屈折および/または吸収および/または反射の最大度合いが5%以下である、請求項1に記載の方法。 - 前記改質部(9)によって前記固体(1)内に圧縮応力が発生させられ、圧縮応力を発生する前記改質部(9)の少なくとも一部が、前記固体(1)から前記固体層(4)を分離する際に、前記固体層(4)に残る、請求項1に記載の方法。
- 前記固体(1)から前記固体層(4)を分離することによって露出する表面に、スパッタリングまたは電気化学的な被膜形成によって金属層(20)を生成すること、をさらに含む、請求項9に記載の方法。
- 前記金属層(20)が第1状態でおよび室温よりも高い温度で前記固体層(4)上に生成され、そして室温で第2状態にあり、この場合第1状態から第2状態への移行によって、前記金属層(20)が前記固体層(4)にあたり、前記固体層(4)に残る改質部(9)の部分の圧縮応力によって生じる変形を少なくとも部分的に補償する、請求項10に記載の方法。
- 前記金属層(20)が、室温よりも高い温度範囲で前記固体層(4)上に生成され、この場合温度範囲は、室温よりも少なくとも100°C高い最高温度、及び2000°Cであるかまたは固体材料の溶融温度または蒸発温度よりも低い温度である最高温度を有する、請求項10に記載の方法。
- 前記複数の改質部(9)を生成することが、
複数のベース改質部を予め定めたプロセスパラメータを使用して生成することと、
臨界以下の亀裂を誘発するために誘発改質部を生成することと、を含み、誘発改質部を生成するための少なくとも1つのプロセスパラメータがベース改質部を生成するための少なくとも1つのプロセスパラメータとは異なっている、請求項1に記載の方法。 - 前記誘発改質部が、前記ベース改質部を生成する線の延在方向に対して傾斜したまたは離隔された方向に生成される、請求項13に記載の方法。
- 臨界以下の亀裂が、5~200μmだけ前記固体内で広がる、請求項13に記載の方法。
- 前記臨界以下の亀裂を形成した、複数の線を有する領域間の部分が、裂ける、請求項13に記載の方法。
- 前記固体材料がシリコンまたはSiCである、請求項1に記載の方法。
- 電気的な要素を生成するための方法であって、
剥離面(8)を形成するためにレーザー光線によって固体(1)の内部に複数の改質部(9)を生成して、前記複数の改質部(9)によって前記固体(1)内に圧縮応力が発生させられるようにすることと、
前記固体(1)の最初から露出していた表面(5)上にまたはこの表面の上方に、層および/または構成部材(150)を配置または生成することによって複合構造体を生成することとを含み、露出した表面(5)が前記固体(1)から分離すべき固体層(4)の構成部分であり、
さらに、前記剥離面(8)に沿って前記固体(1)から前記固体層(4)を分離することを含み、圧縮応力を発生する前記複数の改質部(9)の少なくとも構成部分が前記固体層(4)上に残りかつ前記固体層(4)が前記固体(1)から分離されるのに必要な程度に多くの改質部(9)が生成され、または、前記固体(1)内に他の応力を発生させるために、外力が前記固体(1)に加えられ、前記外力は、前記他の応力が前記複数の改質部(9)によって形成された前記剥離面(8)に沿って亀裂の進行を生じるような強さであることにより、前記固体(1)から前記固体層(4)が分離され、
さらに、前記改質部の部分によって生じる圧縮応力を少なくとも部分的に補償するために、前記固体(1)からの前記固体層(4)の分離によって露出する表面に金属層(20)を生成することを含み、
前記外力を前記固体(1)に加えることが、
前記圧縮応力が機械的に発生するように、ポリマー材料を含む受容層(140)を冷却し、前記層及び/または構成部材(150)上に、当てることと、
前記受容層(140)の前記ポリマー材料がガラス転移を終えて、前記機械的に発生した応力によって前記固体(1)内の亀裂が前記剥離面(8)に沿って広がって、前記亀裂が前記固体層(4)を、前記層および/または構成部材(150)と共に前記固体(1)から分離するように、前記受容層(140)を周囲温度よりも低い温度に冷却することと、による、方法。 - 前記電気的な要素が、ショットキーダイオード(200)および/またはトランジスタであり、この場合前記金属層がオーム接触部および/または熱排出のためのインターフェースを形成し、
平均して、前記固体層の分離によって露出された平らな表面側の1cm2あたり、少なくとも4個の電気的な要素が生成される、請求項18に記載の方法。
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US10978311B2 (en) | 2021-04-13 |
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US20210225659A1 (en) | 2021-07-22 |
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