JP7250929B2 - シクロドデセンの合成方法および合成装置 - Google Patents
シクロドデセンの合成方法および合成装置 Download PDFInfo
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Description
図2のガス誘導中空型撹拌機(Gas inducing impeller)が内部に備えられた反応器を使用して、均一系触媒の下で、シクロドデカトリエンを水素添加反応させてシクロドデセンを合成した。
実施例1で、酢酸およびエタノールの使用有無、これらの使用含量および反応温度を下記表3のように調節した以外は、実施例1と同じ手段で行って、有機溶媒(酢酸、エタノール)の使用の有無および使用含量によるイクロドデカトリエンの転化率およびシクロドデセンの選択度を測定した。これに関する結果は、下記表3に示されている。
実施例1(撹拌速度:1,600rpm)で、反応温度、触媒のモル比(構成比)および反応時間を下記表4のように調節した以外は、実施例1と同じ手段で行って、反応温度および触媒のモル比によるシクロドデカトリエンの転化率およびシクロドデセンの選択度を測定した。
実施例1で、ガス誘導中空型撹拌機の代わりに通常の非中空型撹拌機を使用した以外は、実施例1と同じ手段で行って、撹拌速度および反応時間によるシクロドデカトリエンの転化率およびシクロドデセンの選択度を測定した。これに関する結果は下記表2に示されている。
実施例2で、ガス誘導中空型撹拌機の代わりに通常の非中空型撹拌機を使用した以外は、実施例2と同じ手段で行って、有機溶媒(酢酸、エタノール)の使用有無および使用含量によるシクロドデカトリエンの転化率およびシクロドデセンの選択度を測定した。これに関する結果は下記表3に示されている。
110 気相空間
120 液相空間
200 撹拌機
210 インペラ軸
211 一端部に形成された開口部
212 他端部に形成された開口部
213 中空部
220 インペラ
221 ブレード
CDT シクロドデカトリエン
CDEN シクロドデセン
Claims (11)
- 触媒下で、シクロドデカトリエンが部分水素添加反応し、シクロドデセンが合成される水素添加ステップを含むシクロドデセンの合成方法であって、
前記水素添加ステップは、ガス誘導中空型撹拌機が備えられた撹拌槽型反応器でシクロドデカトリエンおよび水素ガスが反応し、シクロドデセンが合成され、
前記水素添加ステップにおいて、反応圧力は15~80barであり、前記触媒は、塩化ルテニウム、トリフェニルホスフィンおよびホルムアルデヒドを含む均一系触媒を含む、シクロドデセンの合成方法。 - 前記水素添加ステップにおいて、ガス誘導中空型撹拌機が撹拌を行って反応が行われ、前記ガス誘導中空型撹拌機の中空部を介して水素ガスがシクロドデカトリエンに供給される、請求項1に記載のシクロドデセンの合成方法。
- 前記撹拌槽型反応器は、内部に形成される反応空間を含み、
前記反応空間は、上部に形成され、水素ガスが存在する気相空間と、
下部に形成され、シクロドデカトリエンおよび触媒を含む混合物が存在する液相空間とを含む、請求項2に記載のシクロドデセンの合成方法。 - 前記ガス誘導中空型撹拌機は、
内部が中空部となり、一端部と他端部にそれぞれ開口部が形成されるインペラ軸と、
前記インペラ軸の一端部に形成され、この際、前記開口部が撹拌機の外部と連通するように形成されるインペラとを含み、
前記水素添加ステップにおいて、インペラが位置するインペラ軸の一端部に形成された開口部が前記液相空間に位置し、前記インペラ軸の他端部に形成された開口部が前記気相空間に位置して撹拌が行われる、請求項3に記載のシクロドデセンの合成方法。 - 前記水素添加ステップにおいて、撹拌速度は400~3,000rpmである、請求項1に記載のシクロドデセンの合成方法。
- 前記水素添加ステップにおいて、反応温度は100~200℃である、請求項1に記載のシクロドデセンの合成方法。
- 前記塩化ルテニウムおよび前記トリフェニルホスフィンのモル比は1:100~300であり、前記トリフェニルホスフィンおよび前記ホルムアルデヒドのモル比は1:1~2である、請求項1に記載のシクロドデセンの合成方法。
- ラウロラクタム合成用である、請求項1に記載のシクロドデセンの合成方法。
- 触媒下で、シクロドデカトリエンを部分水素添加反応させてシクロドデセンを合成するシクロドデセン合成用反応器であって、
前記反応器は、反応空間が内部に形成される反応部と、前記反応空間に備えられるガス誘導中空型撹拌機とを含み、
前記ガス誘導中空型撹拌機は、内部が中空となり、一端部と他端部にそれぞれ開口部が形成されるインペラ軸と、前記インペラ軸の一端部に形成され、この際、前記開口部が撹拌機の外部と連通するように形成されるインペラとを含み、
前記部分水素添加反応の反応圧力は15~80barであり、前記触媒は、塩化ルテニウム、トリフェニルホスフィンおよびホルムアルデヒドを含む均一系触媒を含む、シクロドデセン合成用反応器。 - 前記反応空間は、上部に形成され、水素ガスが存在する気相空間と、下部に形成され、シクロドデカトリエンおよび触媒を含む混合物が存在する液相空間とを含み、
前記インペラが位置するインペラ軸の一端部に形成された開口部が前記液相空間に位置し、前記インペラ軸の他端部に形成された開口部が前記気相空間に位置する、請求項9に記載のシクロドデセン合成用反応器。 - 前記ガス誘導中空型撹拌機の撹拌速度および前記反応空間の圧力を制御する制御部をさらに含む、請求項10に記載のシクロドデセン合成用反応器。
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