JP7241705B2 - 半導体製造における金属ドープ炭素系ハードマスクの除去 - Google Patents

半導体製造における金属ドープ炭素系ハードマスクの除去 Download PDF

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JP7241705B2
JP7241705B2 JP2019567605A JP2019567605A JP7241705B2 JP 7241705 B2 JP7241705 B2 JP 7241705B2 JP 2019567605 A JP2019567605 A JP 2019567605A JP 2019567605 A JP2019567605 A JP 2019567605A JP 7241705 B2 JP7241705 B2 JP 7241705B2
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metal
doped carbon
containing material
substrate
gas
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JP2020523785A (ja
JP2020523785A5 (enExample
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ユ・ヨンシク
チェン・デイビッド・ウィント
オストロウスキ・カーク・ジェイ．
ゴーシュ・ニコン
コリンジバディ・カーシク・エス．
タン・サマンサ
マッスルホワイト・ネイサン
カワグチ・マーク・ナオシ
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • C—CHEMISTRY; METALLURGY
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/083—Compounds containing nitrogen and non-metals and optionally metals containing one or more halogen atoms
    • C01B21/0832—Binary compounds of nitrogen with halogens
    • C01B21/0835—Nitrogen trifluoride
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/01—Chlorine; Hydrogen chloride
    • C01B7/07—Purification ; Separation
    • C01B7/0743—Purification ; Separation of gaseous or dissolved chlorine
    • H—ELECTRICITY
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    • H01J2237/334—Etching

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
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  • Drying Of Semiconductors (AREA)
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JP2019567605A 2017-06-09 2018-06-04 半導体製造における金属ドープ炭素系ハードマスクの除去 Active JP7241705B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762517717P 2017-06-09 2017-06-09
US62/517,717 2017-06-09
US15/640,345 US11062897B2 (en) 2017-06-09 2017-06-30 Metal doped carbon based hard mask removal in semiconductor fabrication
US15/640,345 2017-06-30
PCT/US2018/035878 WO2018226594A1 (en) 2017-06-09 2018-06-04 Metal doped carbon based hard mask removal in semiconductor fabrication

Publications (3)

Publication Number Publication Date
JP2020523785A JP2020523785A (ja) 2020-08-06
JP2020523785A5 JP2020523785A5 (enExample) 2021-07-26
JP7241705B2 true JP7241705B2 (ja) 2023-03-17

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US (1) US11062897B2 (enExample)
JP (1) JP7241705B2 (enExample)
KR (1) KR102653066B1 (enExample)
TW (1) TWI870339B (enExample)
WO (1) WO2018226594A1 (enExample)

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JP7180847B2 (ja) * 2018-12-18 2022-11-30 東京エレクトロン株式会社 カーボンハードマスク、成膜装置、および成膜方法
TW202113121A (zh) 2019-05-29 2021-04-01 美商蘭姆研究公司 藉由高功率脈衝低頻率射頻產生的高選擇性、低應力、且低氫之類鑽石碳硬遮罩
KR20220030249A (ko) * 2019-06-24 2022-03-10 램 리써치 코포레이션 선택적 탄소 증착
CN114342043A (zh) 2019-08-30 2022-04-12 朗姆研究公司 低压下的高密度、模量和硬度的非晶碳膜
KR20220099116A (ko) * 2019-11-12 2022-07-12 어플라이드 머티어리얼스, 인코포레이티드 감소된 수소 증착 프로세스들
US11664214B2 (en) 2020-06-29 2023-05-30 Applied Materials, Inc. Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications
US11664226B2 (en) 2020-06-29 2023-05-30 Applied Materials, Inc. Methods for producing high-density carbon films for hardmasks and other patterning applications
US11769671B2 (en) * 2020-09-11 2023-09-26 Applied Materials, Inc. Systems and methods for selective metal compound removal
CN115735262A (zh) * 2020-09-25 2023-03-03 朗姆研究公司 稳健的可灰化硬掩模
US11631589B2 (en) 2021-05-04 2023-04-18 Applied Materials, Inc. Metal etch in high aspect-ratio features
US11702738B2 (en) * 2021-05-17 2023-07-18 Applied Materials, Inc. Chamber processes for reducing backside particles
JP2025524492A (ja) * 2022-06-27 2025-07-30 ラム リサーチ コーポレーション 統合高アスペクト比エッチング
US20250046599A1 (en) * 2023-08-02 2025-02-06 Applied Materials, Inc. Diamond-like carbon gap fill
US20250046611A1 (en) * 2023-08-03 2025-02-06 Applied Materials, Inc. Neutral stress diamond-like carbon
US20250087494A1 (en) * 2023-09-11 2025-03-13 Applied Materials, Inc. Systems and methods for selective metal-containing hardmask removal
US20250095990A1 (en) * 2023-09-19 2025-03-20 Applied Materials, Inc. Metal-containing hardmask opening methods using boron-and-halogen-containing precursors
JP2025108935A (ja) * 2024-01-11 2025-07-24 東京エレクトロン株式会社 ハードマスク除去方法及びハードマスク除去装置
JP2025108936A (ja) * 2024-01-11 2025-07-24 東京エレクトロン株式会社 ハードマスク除去方法及びハードマスク除去装置
US20250379052A1 (en) * 2024-06-05 2025-12-11 Applied Materials, Inc. Amorphous multi-metal-doped film for hardmask application

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