JP2020523785A5 - - Google Patents
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- JP2020523785A5 JP2020523785A5 JP2019567605A JP2019567605A JP2020523785A5 JP 2020523785 A5 JP2020523785 A5 JP 2020523785A5 JP 2019567605 A JP2019567605 A JP 2019567605A JP 2019567605 A JP2019567605 A JP 2019567605A JP 2020523785 A5 JP2020523785 A5 JP 2020523785A5
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- JP
- Japan
- Prior art keywords
- chuck
- wafer
- subchamber
- inches
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005530 etching Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762517717P | 2017-06-09 | 2017-06-09 | |
| US62/517,717 | 2017-06-09 | ||
| US15/640,345 | 2017-06-30 | ||
| US15/640,345 US11062897B2 (en) | 2017-06-09 | 2017-06-30 | Metal doped carbon based hard mask removal in semiconductor fabrication |
| PCT/US2018/035878 WO2018226594A1 (en) | 2017-06-09 | 2018-06-04 | Metal doped carbon based hard mask removal in semiconductor fabrication |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020523785A JP2020523785A (ja) | 2020-08-06 |
| JP2020523785A5 true JP2020523785A5 (enExample) | 2021-07-26 |
| JP7241705B2 JP7241705B2 (ja) | 2023-03-17 |
Family
ID=64563692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019567605A Active JP7241705B2 (ja) | 2017-06-09 | 2018-06-04 | 半導体製造における金属ドープ炭素系ハードマスクの除去 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11062897B2 (enExample) |
| JP (1) | JP7241705B2 (enExample) |
| KR (1) | KR102653066B1 (enExample) |
| TW (2) | TWI901008B (enExample) |
| WO (1) | WO2018226594A1 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110476239B (zh) | 2017-04-07 | 2023-10-13 | 应用材料公司 | 使用反应性退火的间隙填充 |
| JP6833657B2 (ja) | 2017-11-07 | 2021-02-24 | 東京エレクトロン株式会社 | 基板をプラズマエッチングする方法 |
| US10395925B2 (en) * | 2017-12-28 | 2019-08-27 | International Business Machines Corporation | Patterning material film stack comprising hard mask layer having high metal content interface to resist layer |
| GB201813368D0 (en) | 2018-08-16 | 2018-10-03 | Lam Res Ag | Etchant composition |
| JP7180847B2 (ja) * | 2018-12-18 | 2022-11-30 | 東京エレクトロン株式会社 | カーボンハードマスク、成膜装置、および成膜方法 |
| CN112368805B (zh) * | 2018-12-18 | 2024-10-08 | 玛特森技术公司 | 使用含硫工艺气体的含碳硬掩模去除工艺 |
| CN113891954B (zh) | 2019-05-29 | 2025-09-19 | 朗姆研究公司 | 通过高功率脉冲低频率rf产生的高选择性、低应力、且低氢的类金刚石碳硬掩模 |
| KR20220030249A (ko) * | 2019-06-24 | 2022-03-10 | 램 리써치 코포레이션 | 선택적 탄소 증착 |
| KR102888630B1 (ko) | 2019-08-30 | 2025-11-19 | 램 리써치 코포레이션 | 저압에서의 고밀도, 고모듈러스, 및 고경도 비정질 탄소 막들 |
| JP7617913B2 (ja) * | 2019-11-12 | 2025-01-20 | アプライド マテリアルズ インコーポレイテッド | 低減された水素堆積方法 |
| US11664214B2 (en) | 2020-06-29 | 2023-05-30 | Applied Materials, Inc. | Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications |
| US11664226B2 (en) | 2020-06-29 | 2023-05-30 | Applied Materials, Inc. | Methods for producing high-density carbon films for hardmasks and other patterning applications |
| CN116075920A (zh) * | 2020-06-29 | 2023-05-05 | 应用材料公司 | 用于产生用于硬掩模和其他图案化应用的高密度、氮掺杂碳膜的方法 |
| US11769671B2 (en) * | 2020-09-11 | 2023-09-26 | Applied Materials, Inc. | Systems and methods for selective metal compound removal |
| KR20230078588A (ko) * | 2020-09-25 | 2023-06-02 | 램 리써치 코포레이션 | 견고한 애싱 가능한 하드 마스크 (robust ashable hard mask) |
| US12077852B2 (en) * | 2021-04-26 | 2024-09-03 | Applied Materials, Inc. | Metal-doped boron films |
| US11631589B2 (en) | 2021-05-04 | 2023-04-18 | Applied Materials, Inc. | Metal etch in high aspect-ratio features |
| US11702738B2 (en) | 2021-05-17 | 2023-07-18 | Applied Materials, Inc. | Chamber processes for reducing backside particles |
| KR20250026848A (ko) * | 2022-06-27 | 2025-02-25 | 램 리써치 코포레이션 | 통합된 높은 종횡비 에칭 |
| US20250046599A1 (en) * | 2023-08-02 | 2025-02-06 | Applied Materials, Inc. | Diamond-like carbon gap fill |
| US20250046611A1 (en) * | 2023-08-03 | 2025-02-06 | Applied Materials, Inc. | Neutral stress diamond-like carbon |
| US20250087494A1 (en) * | 2023-09-11 | 2025-03-13 | Applied Materials, Inc. | Systems and methods for selective metal-containing hardmask removal |
| US20250095990A1 (en) * | 2023-09-19 | 2025-03-20 | Applied Materials, Inc. | Metal-containing hardmask opening methods using boron-and-halogen-containing precursors |
| JP2025108935A (ja) * | 2024-01-11 | 2025-07-24 | 東京エレクトロン株式会社 | ハードマスク除去方法及びハードマスク除去装置 |
| JP2025108936A (ja) * | 2024-01-11 | 2025-07-24 | 東京エレクトロン株式会社 | ハードマスク除去方法及びハードマスク除去装置 |
| US20250379052A1 (en) * | 2024-06-05 | 2025-12-11 | Applied Materials, Inc. | Amorphous multi-metal-doped film for hardmask application |
| WO2026044028A1 (en) * | 2024-08-21 | 2026-02-26 | Lam Research Corporation | Apparatuses and techniques for thermal etching |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5756400A (en) * | 1995-12-08 | 1998-05-26 | Applied Materials, Inc. | Method and apparatus for cleaning by-products from plasma chamber surfaces |
| JP3524763B2 (ja) * | 1998-05-12 | 2004-05-10 | 株式会社日立製作所 | エッチング方法 |
| US6440870B1 (en) * | 2000-07-12 | 2002-08-27 | Applied Materials, Inc. | Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures |
| US7816188B2 (en) * | 2001-07-30 | 2010-10-19 | Sandisk 3D Llc | Process for fabricating a dielectric film using plasma oxidation |
| US6930048B1 (en) | 2002-09-18 | 2005-08-16 | Lam Research Corporation | Etching a metal hard mask for an integrated circuit structure |
| US8298933B2 (en) * | 2003-04-11 | 2012-10-30 | Novellus Systems, Inc. | Conformal films on semiconductor substrates |
| JP4177192B2 (ja) * | 2003-08-05 | 2008-11-05 | 株式会社日立ハイテクノロジーズ | プラズマエッチング装置およびプラズマエッチング方法 |
| KR100560821B1 (ko) * | 2004-08-17 | 2006-03-13 | 삼성전자주식회사 | 반도체 소자의 캐패시터 형성 방법 |
| US7812381B2 (en) * | 2005-01-24 | 2010-10-12 | Samsung Electronics Co., Ltd. | Image sensor with light receiving region having different potential energy according to wavelength of light and electronic product employing the same |
| US7235492B2 (en) * | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |
| JP4919871B2 (ja) * | 2007-02-09 | 2012-04-18 | 東京エレクトロン株式会社 | エッチング方法、半導体装置の製造方法および記憶媒体 |
| US7666474B2 (en) | 2008-05-07 | 2010-02-23 | Asm America, Inc. | Plasma-enhanced pulsed deposition of metal carbide films |
| US8435419B2 (en) * | 2010-06-14 | 2013-05-07 | Applied Materials, Inc. | Methods of processing substrates having metal materials |
| US20110303639A1 (en) * | 2010-06-14 | 2011-12-15 | Applied Materials, Inc. | Methods for processing substrates having metal hard masks |
| US20120258261A1 (en) | 2011-04-11 | 2012-10-11 | Novellus Systems, Inc. | Increasing etch selectivity of carbon films with lower absorption co-efficient and stress |
| JP2014007370A (ja) * | 2012-06-01 | 2014-01-16 | Tokyo Electron Ltd | プラズマエッチング方法 |
| US9312220B2 (en) * | 2013-03-12 | 2016-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for a low-K dielectric with pillar-type air-gaps |
| KR102170144B1 (ko) * | 2013-08-23 | 2020-10-27 | 삼성전자주식회사 | 휨 제어 막을 이용한 반도체 소자 형성 방법 및 관련된 소자 |
| US9018103B2 (en) * | 2013-09-26 | 2015-04-28 | Lam Research Corporation | High aspect ratio etch with combination mask |
| KR102222909B1 (ko) * | 2013-10-10 | 2021-03-04 | 삼성전자주식회사 | 반도체 소자의 제조방법 |
| KR102311036B1 (ko) | 2014-01-08 | 2021-10-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 비정질 탄소 막들 내로의 이온 주입에 의한 고 에칭 선택성 하드마스크 재료의 개발 |
| US9418867B2 (en) * | 2014-01-10 | 2016-08-16 | Applied Materials, Inc. | Mask passivation using plasma |
| US10322495B2 (en) * | 2014-01-31 | 2019-06-18 | Suzhou Superior Industrial Technology Co. Ltd. | Cemented tungsten carbide bodies having a cobalt-boron alloy matrix |
| US20150345642A1 (en) * | 2014-05-29 | 2015-12-03 | Caterpillar Inc. | Thin film coating on mechanical face seals |
| US9624577B2 (en) * | 2014-07-22 | 2017-04-18 | Applied Materials, Inc. | Deposition of metal doped amorphous carbon film |
| US9520295B2 (en) | 2015-02-03 | 2016-12-13 | Lam Research Corporation | Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems |
| US9852923B2 (en) * | 2015-04-02 | 2017-12-26 | Applied Materials, Inc. | Mask etch for patterning |
| US9362292B1 (en) | 2015-04-17 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Two-port SRAM cell structure for vertical devices |
| US9806252B2 (en) | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
| US9865459B2 (en) * | 2015-04-22 | 2018-01-09 | Applied Materials, Inc. | Plasma treatment to improve adhesion between hardmask film and silicon oxide film |
| US9754793B2 (en) * | 2015-06-12 | 2017-09-05 | Toshiba Memory Corporation | Method for manufacturing semiconductor device |
| KR102443695B1 (ko) | 2015-08-25 | 2022-09-15 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| US9984858B2 (en) * | 2015-09-04 | 2018-05-29 | Lam Research Corporation | ALE smoothness: in and outside semiconductor industry |
| US10504838B2 (en) * | 2016-09-21 | 2019-12-10 | Micron Technology, Inc. | Methods of forming a semiconductor device structure including a stair step structure |
| US10454029B2 (en) * | 2016-11-11 | 2019-10-22 | Lam Research Corporation | Method for reducing the wet etch rate of a sin film without damaging the underlying substrate |
-
2017
- 2017-06-30 US US15/640,345 patent/US11062897B2/en active Active
-
2018
- 2018-06-04 JP JP2019567605A patent/JP7241705B2/ja active Active
- 2018-06-04 WO PCT/US2018/035878 patent/WO2018226594A1/en not_active Ceased
- 2018-06-04 KR KR1020207000636A patent/KR102653066B1/ko active Active
- 2018-06-07 TW TW113104866A patent/TWI901008B/zh active
- 2018-06-07 TW TW107119567A patent/TWI870339B/zh active
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