KR102653066B1 - 반도체 제조시 금속 도핑된 탄소계 하드마스크 제거 - Google Patents

반도체 제조시 금속 도핑된 탄소계 하드마스크 제거 Download PDF

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KR102653066B1
KR102653066B1 KR1020207000636A KR20207000636A KR102653066B1 KR 102653066 B1 KR102653066 B1 KR 102653066B1 KR 1020207000636 A KR1020207000636 A KR 1020207000636A KR 20207000636 A KR20207000636 A KR 20207000636A KR 102653066 B1 KR102653066 B1 KR 102653066B1
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metal
doped carbon
containing material
gas
substrate
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KR20200006628A (ko
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용식 유
데이비드 윙투 청
커크 제이. 오스트로스키
니콘 고시
카틱 에스. 콜린지바디
사만다 탄
나단 머슬화이트
마크 나오시 카와구치
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
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    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
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    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • C—CHEMISTRY; METALLURGY
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/083—Compounds containing nitrogen and non-metals and optionally metals containing one or more halogen atoms
    • C01B21/0832—Binary compounds of nitrogen with halogens
    • C01B21/0835—Nitrogen trifluoride
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    • C01B7/00—Halogens; Halogen acids
    • C01B7/01—Chlorine; Hydrogen chloride
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  • Microelectronics & Electronic Packaging (AREA)
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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
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  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
KR1020207000636A 2017-06-09 2018-06-04 반도체 제조시 금속 도핑된 탄소계 하드마스크 제거 Active KR102653066B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762517717P 2017-06-09 2017-06-09
US62/517,717 2017-06-09
US15/640,345 2017-06-30
US15/640,345 US11062897B2 (en) 2017-06-09 2017-06-30 Metal doped carbon based hard mask removal in semiconductor fabrication
PCT/US2018/035878 WO2018226594A1 (en) 2017-06-09 2018-06-04 Metal doped carbon based hard mask removal in semiconductor fabrication

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Publication Number Publication Date
KR20200006628A KR20200006628A (ko) 2020-01-20
KR102653066B1 true KR102653066B1 (ko) 2024-03-29

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US (1) US11062897B2 (enExample)
JP (1) JP7241705B2 (enExample)
KR (1) KR102653066B1 (enExample)
TW (1) TWI870339B (enExample)
WO (1) WO2018226594A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018187546A1 (en) 2017-04-07 2018-10-11 Applied Materials, Inc. Gapfill using reactive anneal
JP6833657B2 (ja) * 2017-11-07 2021-02-24 東京エレクトロン株式会社 基板をプラズマエッチングする方法
US10395925B2 (en) * 2017-12-28 2019-08-27 International Business Machines Corporation Patterning material film stack comprising hard mask layer having high metal content interface to resist layer
GB201813368D0 (en) 2018-08-16 2018-10-03 Lam Res Ag Etchant composition
WO2020131608A1 (en) * 2018-12-18 2020-06-25 Mattson Technology, Inc. Carbon containing hardmask removal process using sulfur containing process gas
JP7180847B2 (ja) * 2018-12-18 2022-11-30 東京エレクトロン株式会社 カーボンハードマスク、成膜装置、および成膜方法
KR20220002748A (ko) 2019-05-29 2022-01-06 램 리써치 코포레이션 고 전력 펄싱된 저 주파수 rf에 의한 고 선택도, 저 응력, 및 저 수소 다이아몬드-유사 탄소 하드 마스크들
KR20220030249A (ko) * 2019-06-24 2022-03-10 램 리써치 코포레이션 선택적 탄소 증착
JP2022545720A (ja) 2019-08-30 2022-10-28 ラム リサーチ コーポレーション 低圧において高密度、高弾性率、および高硬度のアモルファスカーボン膜
KR20220099116A (ko) 2019-11-12 2022-07-12 어플라이드 머티어리얼스, 인코포레이티드 감소된 수소 증착 프로세스들
US11664214B2 (en) 2020-06-29 2023-05-30 Applied Materials, Inc. Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications
US11664226B2 (en) 2020-06-29 2023-05-30 Applied Materials, Inc. Methods for producing high-density carbon films for hardmasks and other patterning applications
US11769671B2 (en) 2020-09-11 2023-09-26 Applied Materials, Inc. Systems and methods for selective metal compound removal
KR20230078588A (ko) * 2020-09-25 2023-06-02 램 리써치 코포레이션 견고한 애싱 가능한 하드 마스크 (robust ashable hard mask)
US11631589B2 (en) * 2021-05-04 2023-04-18 Applied Materials, Inc. Metal etch in high aspect-ratio features
US11702738B2 (en) * 2021-05-17 2023-07-18 Applied Materials, Inc. Chamber processes for reducing backside particles
KR20250026848A (ko) * 2022-06-27 2025-02-25 램 리써치 코포레이션 통합된 높은 종횡비 에칭
US20250046599A1 (en) * 2023-08-02 2025-02-06 Applied Materials, Inc. Diamond-like carbon gap fill
US20250046611A1 (en) * 2023-08-03 2025-02-06 Applied Materials, Inc. Neutral stress diamond-like carbon
US20250087494A1 (en) * 2023-09-11 2025-03-13 Applied Materials, Inc. Systems and methods for selective metal-containing hardmask removal
US20250095990A1 (en) * 2023-09-19 2025-03-20 Applied Materials, Inc. Metal-containing hardmask opening methods using boron-and-halogen-containing precursors
JP2025108936A (ja) * 2024-01-11 2025-07-24 東京エレクトロン株式会社 ハードマスク除去方法及びハードマスク除去装置
JP2025108935A (ja) * 2024-01-11 2025-07-24 東京エレクトロン株式会社 ハードマスク除去方法及びハードマスク除去装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030022526A1 (en) * 2001-07-30 2003-01-30 Vyvoda Michael A. Process for fabricating a dielectric film using plasma oxidation
US20160293441A1 (en) * 2015-04-02 2016-10-06 Applied Materials Inc. Mask etch for patterning
US20160314960A1 (en) * 2015-04-22 2016-10-27 Applied Materials, Inc. Plasma treatment to improve adhesion between hardmask film and silicon oxide film
JP2017507477A (ja) 2014-01-08 2017-03-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ アモルファスカーボンフィルムの中へのイオン注入による高エッチング選択性ハードマスク材料の開発

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5756400A (en) * 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
JP3524763B2 (ja) * 1998-05-12 2004-05-10 株式会社日立製作所 エッチング方法
US6440870B1 (en) * 2000-07-12 2002-08-27 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
US6930048B1 (en) 2002-09-18 2005-08-16 Lam Research Corporation Etching a metal hard mask for an integrated circuit structure
US8298933B2 (en) * 2003-04-11 2012-10-30 Novellus Systems, Inc. Conformal films on semiconductor substrates
JP4177192B2 (ja) * 2003-08-05 2008-11-05 株式会社日立ハイテクノロジーズ プラズマエッチング装置およびプラズマエッチング方法
KR100560821B1 (ko) * 2004-08-17 2006-03-13 삼성전자주식회사 반도체 소자의 캐패시터 형성 방법
US7812381B2 (en) * 2005-01-24 2010-10-12 Samsung Electronics Co., Ltd. Image sensor with light receiving region having different potential energy according to wavelength of light and electronic product employing the same
US7235492B2 (en) * 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
JP4919871B2 (ja) * 2007-02-09 2012-04-18 東京エレクトロン株式会社 エッチング方法、半導体装置の製造方法および記憶媒体
US7666474B2 (en) 2008-05-07 2010-02-23 Asm America, Inc. Plasma-enhanced pulsed deposition of metal carbide films
US20110303639A1 (en) * 2010-06-14 2011-12-15 Applied Materials, Inc. Methods for processing substrates having metal hard masks
US8435419B2 (en) * 2010-06-14 2013-05-07 Applied Materials, Inc. Methods of processing substrates having metal materials
US20120258261A1 (en) 2011-04-11 2012-10-11 Novellus Systems, Inc. Increasing etch selectivity of carbon films with lower absorption co-efficient and stress
JP2014007370A (ja) * 2012-06-01 2014-01-16 Tokyo Electron Ltd プラズマエッチング方法
US9312220B2 (en) * 2013-03-12 2016-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a low-K dielectric with pillar-type air-gaps
KR102170144B1 (ko) * 2013-08-23 2020-10-27 삼성전자주식회사 휨 제어 막을 이용한 반도체 소자 형성 방법 및 관련된 소자
US9018103B2 (en) * 2013-09-26 2015-04-28 Lam Research Corporation High aspect ratio etch with combination mask
KR102222909B1 (ko) * 2013-10-10 2021-03-04 삼성전자주식회사 반도체 소자의 제조방법
US9418867B2 (en) * 2014-01-10 2016-08-16 Applied Materials, Inc. Mask passivation using plasma
US10322495B2 (en) * 2014-01-31 2019-06-18 Suzhou Superior Industrial Technology Co. Ltd. Cemented tungsten carbide bodies having a cobalt-boron alloy matrix
US20150345642A1 (en) * 2014-05-29 2015-12-03 Caterpillar Inc. Thin film coating on mechanical face seals
US9624577B2 (en) * 2014-07-22 2017-04-18 Applied Materials, Inc. Deposition of metal doped amorphous carbon film
US9520295B2 (en) 2015-02-03 2016-12-13 Lam Research Corporation Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems
US9362292B1 (en) 2015-04-17 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Two-port SRAM cell structure for vertical devices
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9754793B2 (en) * 2015-06-12 2017-09-05 Toshiba Memory Corporation Method for manufacturing semiconductor device
KR102443695B1 (ko) 2015-08-25 2022-09-15 삼성전자주식회사 반도체 소자의 제조 방법
US9984858B2 (en) * 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
US10504838B2 (en) * 2016-09-21 2019-12-10 Micron Technology, Inc. Methods of forming a semiconductor device structure including a stair step structure
US10454029B2 (en) * 2016-11-11 2019-10-22 Lam Research Corporation Method for reducing the wet etch rate of a sin film without damaging the underlying substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030022526A1 (en) * 2001-07-30 2003-01-30 Vyvoda Michael A. Process for fabricating a dielectric film using plasma oxidation
JP2017507477A (ja) 2014-01-08 2017-03-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ アモルファスカーボンフィルムの中へのイオン注入による高エッチング選択性ハードマスク材料の開発
US20160293441A1 (en) * 2015-04-02 2016-10-06 Applied Materials Inc. Mask etch for patterning
US20160314960A1 (en) * 2015-04-22 2016-10-27 Applied Materials, Inc. Plasma treatment to improve adhesion between hardmask film and silicon oxide film

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