JP7213348B2 - リン酸溶液中のシリコン濃度の分析方法 - Google Patents
リン酸溶液中のシリコン濃度の分析方法 Download PDFInfo
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- JP7213348B2 JP7213348B2 JP2021529746A JP2021529746A JP7213348B2 JP 7213348 B2 JP7213348 B2 JP 7213348B2 JP 2021529746 A JP2021529746 A JP 2021529746A JP 2021529746 A JP2021529746 A JP 2021529746A JP 7213348 B2 JP7213348 B2 JP 7213348B2
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- silicon
- phosphoric acid
- acid solution
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- silicon nitride
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 title claims description 82
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 43
- 229910052710 silicon Inorganic materials 0.000 title claims description 43
- 239000010703 silicon Substances 0.000 title claims description 43
- 229910000147 aluminium phosphate Inorganic materials 0.000 title claims description 41
- 238000004458 analytical method Methods 0.000 title description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 38
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 150000003377 silicon compounds Chemical class 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- 239000011856 silicon-based particle Substances 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 150000002222 fluorine compounds Chemical class 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 33
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000012895 dilution Substances 0.000 description 4
- 238000010790 dilution Methods 0.000 description 4
- 239000012153 distilled water Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/06—Investigating concentration of particle suspensions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/14—Investigating or analyzing materials by the use of thermal means by using distillation, extraction, sublimation, condensation, freezing, or crystallisation
- G01N25/142—Investigating or analyzing materials by the use of thermal means by using distillation, extraction, sublimation, condensation, freezing, or crystallisation by condensation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N9/00—Investigating density or specific gravity of materials; Analysing materials by determining density or specific gravity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/06—Investigating concentration of particle suspensions
- G01N2015/0687—Investigating concentration of particle suspensions in solutions, e.g. non volatile residue
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Dispersion Chemistry (AREA)
- Weting (AREA)
- Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Description
従来、前記シリコンナイトライドをエッチングするためにリン酸溶液のみを用いたので、溶液中に存在するシリコンの濃度は重要ではなかった。しかし、3D NAND工程を行うにつれ、シリコンナイトライドとシリコンオキサイド(SiO2)の選択比が重要となった。
本発明は、リン酸溶液のシリコン濃度を分析する方法に関し、実施例を用いて具体的に説明する。
下記表1には、本発明の温度によるシリコン濃度の数値が記載されている。
リン酸溶液によりシリコンナイトライドウエハをエッチングした後、ICP-OESを用いて正確なシリコン濃度を測定した。
Claims (1)
- シリコンナイトライド(Si 3 N 4 )とシリコンオキサイド(SiO 2 )の選択比を高めるために、シリコン化合物が添加されたリン酸溶液でエッチングする工程で、リン酸溶液に添加されたシリコン化合物の濃度に関係なくシリコンナイトライドがエッチングされて生成されたシリコンの濃度のみを分析する方法は、
20~180℃のリン酸溶液中のシリコンの溶解度を用いる方法であって、
前記リン酸溶液を、エタノールであるソルベントで希釈し、リン酸溶液とエタノールの比率が1:0.5~1となるように混合して、前記リン酸溶液の温度を1~35℃に下げてシリコンを析出させ、
析出したシリコン粒子50~100重量部にフッ素化合物溶液100重量部を混合し溶解させて分析するか、或いは析出したシリコンの粒子径0.01~100μmの粒子を粒子分析器で分析することを特徴とする、リン酸溶液に添加されたシリコン化合物の濃度に関係なくシリコンナイトライドがエッチングされて生成されたシリコンの濃度のみを分析する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2018-0168622 | 2018-12-24 | ||
KR1020180168622A KR102084044B1 (ko) | 2018-12-24 | 2018-12-24 | 인산용액 중의 실리콘 농도 분석방법 |
PCT/KR2019/015261 WO2020138709A1 (ko) | 2018-12-24 | 2019-11-11 | 인산용액 중의 실리콘 농도 분석방법 |
Publications (2)
Publication Number | Publication Date |
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JP2022510629A JP2022510629A (ja) | 2022-01-27 |
JP7213348B2 true JP7213348B2 (ja) | 2023-01-26 |
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JP2021529746A Active JP7213348B2 (ja) | 2018-12-24 | 2019-11-11 | リン酸溶液中のシリコン濃度の分析方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20220146395A1 (ja) |
JP (1) | JP7213348B2 (ja) |
KR (1) | KR102084044B1 (ja) |
CN (1) | CN113227771A (ja) |
SG (1) | SG11202105786PA (ja) |
TW (1) | TWI728603B (ja) |
WO (1) | WO2020138709A1 (ja) |
Citations (8)
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JP2015070119A (ja) | 2013-09-30 | 2015-04-13 | 株式会社Screenホールディングス | 基板処理装置 |
US20160018358A1 (en) | 2014-07-18 | 2016-01-21 | Eci Technology, Inc. | Analysis of silicon concentration in phosphoric acid etchant solutions |
JP2016042503A (ja) | 2014-08-14 | 2016-03-31 | 株式会社Screenホールディングス | 基板処理方法 |
JP2016059855A (ja) | 2014-09-17 | 2016-04-25 | 株式会社東芝 | 処理装置、及び、処理液の再利用方法 |
JP2017106917A (ja) | 2015-12-08 | 2017-06-15 | エレメンタル・サイエンティフィック・インコーポレイテッドElemental Scientific, Inc. | 化学元素濃度の測定および半導体プロセスの制御のための熱リン酸の自動サンプリング |
US20170287725A1 (en) | 2016-03-30 | 2017-10-05 | Tokyo Electron Limited | Colloidal Silica Growth Inhibitor and Associated Method and System |
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EP0110732B1 (en) * | 1982-12-07 | 1987-03-11 | Asahi Kasei Kogyo Kabushiki Kaisha | Process for producing diphenylmethane dicarbamates |
JPS59172451A (ja) * | 1983-03-18 | 1984-09-29 | Asahi Chem Ind Co Ltd | ポリイソシアナ−ト類の製造方法 |
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-
2018
- 2018-12-24 KR KR1020180168622A patent/KR102084044B1/ko active IP Right Grant
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2019
- 2019-11-11 US US17/299,070 patent/US20220146395A1/en active Pending
- 2019-11-11 JP JP2021529746A patent/JP7213348B2/ja active Active
- 2019-11-11 CN CN201980085759.5A patent/CN113227771A/zh active Pending
- 2019-11-11 SG SG11202105786PA patent/SG11202105786PA/en unknown
- 2019-11-11 WO PCT/KR2019/015261 patent/WO2020138709A1/ko active Application Filing
- 2019-12-17 TW TW108146280A patent/TWI728603B/zh active
Patent Citations (9)
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JP2007108156A (ja) | 2005-09-14 | 2007-04-26 | Mitsui Chemical Analysis & Consulting Service Inc | 有機珪素化合物中の珪素の定量方法 |
JP2009058306A (ja) | 2007-08-30 | 2009-03-19 | Kurabo Ind Ltd | 液体中の溶存無機物質濃度測定方法及び測定装置、並びに、当該溶存無機物質濃度測定装置を備えたエッチング液再生システム |
JP2015070119A (ja) | 2013-09-30 | 2015-04-13 | 株式会社Screenホールディングス | 基板処理装置 |
US20160018358A1 (en) | 2014-07-18 | 2016-01-21 | Eci Technology, Inc. | Analysis of silicon concentration in phosphoric acid etchant solutions |
JP2016042503A (ja) | 2014-08-14 | 2016-03-31 | 株式会社Screenホールディングス | 基板処理方法 |
JP2016059855A (ja) | 2014-09-17 | 2016-04-25 | 株式会社東芝 | 処理装置、及び、処理液の再利用方法 |
JP2017106917A (ja) | 2015-12-08 | 2017-06-15 | エレメンタル・サイエンティフィック・インコーポレイテッドElemental Scientific, Inc. | 化学元素濃度の測定および半導体プロセスの制御のための熱リン酸の自動サンプリング |
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Also Published As
Publication number | Publication date |
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KR102084044B1 (ko) | 2020-03-03 |
TWI728603B (zh) | 2021-05-21 |
US20220146395A1 (en) | 2022-05-12 |
SG11202105786PA (en) | 2021-06-29 |
TW202026639A (zh) | 2020-07-16 |
WO2020138709A1 (ko) | 2020-07-02 |
JP2022510629A (ja) | 2022-01-27 |
CN113227771A (zh) | 2021-08-06 |
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