SG11202105786PA - Method for analyzing silicon concentration in phosphoric acid solution - Google Patents
Method for analyzing silicon concentration in phosphoric acid solutionInfo
- Publication number
- SG11202105786PA SG11202105786PA SG11202105786PA SG11202105786PA SG11202105786PA SG 11202105786P A SG11202105786P A SG 11202105786PA SG 11202105786P A SG11202105786P A SG 11202105786PA SG 11202105786P A SG11202105786P A SG 11202105786PA SG 11202105786P A SG11202105786P A SG 11202105786PA
- Authority
- SG
- Singapore
- Prior art keywords
- phosphoric acid
- acid solution
- silicon concentration
- analyzing silicon
- analyzing
- Prior art date
Links
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 title 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/14—Investigating or analyzing materials by the use of thermal means by using distillation, extraction, sublimation, condensation, freezing, or crystallisation
- G01N25/142—Investigating or analyzing materials by the use of thermal means by using distillation, extraction, sublimation, condensation, freezing, or crystallisation by condensation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/06—Investigating concentration of particle suspensions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N9/00—Investigating density or specific gravity of materials; Analysing materials by determining density or specific gravity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/06—Investigating concentration of particle suspensions
- G01N2015/0687—Investigating concentration of particle suspensions in solutions, e.g. non volatile residue
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Dispersion Chemistry (AREA)
- Weting (AREA)
- Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180168622A KR102084044B1 (en) | 2018-12-24 | 2018-12-24 | Analysis method for silicon concentration in the phosphoric acid solution |
PCT/KR2019/015261 WO2020138709A1 (en) | 2018-12-24 | 2019-11-11 | Method for analyzing silicon concentration in phosphoric acid solution |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202105786PA true SG11202105786PA (en) | 2021-06-29 |
Family
ID=69937925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202105786PA SG11202105786PA (en) | 2018-12-24 | 2019-11-11 | Method for analyzing silicon concentration in phosphoric acid solution |
Country Status (7)
Country | Link |
---|---|
US (1) | US20220146395A1 (en) |
JP (1) | JP7213348B2 (en) |
KR (1) | KR102084044B1 (en) |
CN (1) | CN113227771A (en) |
SG (1) | SG11202105786PA (en) |
TW (1) | TWI728603B (en) |
WO (1) | WO2020138709A1 (en) |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1520273A (en) * | 1974-07-06 | 1978-08-02 | Fisons Ltd | Phosphoric acid and gypsum from phosphatic material |
US4060586A (en) * | 1976-06-15 | 1977-11-29 | Pennzoil Company | Recovery of fluorides from gypsum |
US4552974A (en) * | 1982-12-07 | 1985-11-12 | Asahi Kasei Kogyo Kabushiki Kaisha | Process for producing diphenylmethane dicarbamates |
JPS59172451A (en) * | 1983-03-18 | 1984-09-29 | Asahi Chem Ind Co Ltd | Preparation of polyisocyanates |
US4826986A (en) * | 1986-06-16 | 1989-05-02 | Eli Lilly And Company | 6-Oxo-trans-octa- and decahydroquinolines |
US5134143A (en) * | 1986-06-16 | 1992-07-28 | Eli Lilly And Company | BCD tricyclic ergoline part-structure analogues |
JPH09275091A (en) * | 1996-04-03 | 1997-10-21 | Mitsubishi Electric Corp | Etching device of semiconductor nitride film |
DE60135128D1 (en) * | 2001-10-18 | 2008-09-11 | Infineon Technologies Ag | Device for determining the content of silicon dioxide |
JP3788985B2 (en) * | 2002-09-17 | 2006-06-21 | エム・エフエスアイ株式会社 | Etching solution regeneration method, etching method and etching apparatus |
US7238295B2 (en) * | 2002-09-17 | 2007-07-03 | m·FSI Ltd. | Regeneration process of etching solution, etching process, and etching system |
TWI331775B (en) * | 2005-05-17 | 2010-10-11 | Apprecia Technology Inc | Equipment and method for measuring silicon concentration in phosphoric acid solution |
JP4202363B2 (en) | 2005-09-14 | 2008-12-24 | 株式会社三井化学分析センター | Method for determination of silicon in organosilicon compounds |
JP4944558B2 (en) * | 2006-10-12 | 2012-06-06 | アプリシアテクノロジー株式会社 | Etching solution regeneration method, etching method and etching apparatus |
US8409997B2 (en) * | 2007-01-25 | 2013-04-02 | Taiwan Semiconductor Maufacturing Co., Ltd. | Apparatus and method for controlling silicon nitride etching tank |
JP2009058306A (en) * | 2007-08-30 | 2009-03-19 | Kurabo Ind Ltd | Method and device for measuring dissolved inorganic material concentration in liquid, and etching liquid regeneration system with the same device |
US20110133099A1 (en) * | 2008-07-30 | 2011-06-09 | Horiba Advanced Techno, Co., Ltd. | Silicon concentration measuring instrument |
US8008087B1 (en) * | 2010-03-25 | 2011-08-30 | Eci Technology, Inc. | Analysis of silicon concentration in phosphoric acid etchant solutions |
JP5829444B2 (en) * | 2011-07-08 | 2015-12-09 | 株式会社Screenホールディングス | Phosphoric acid regeneration method, phosphoric acid regeneration apparatus and substrate processing system |
JP2013041923A (en) * | 2011-08-12 | 2013-02-28 | Apprecia Technology Inc | Device for measuring silicon concentration in phosphate solution, and measuring method therefor |
JP2015070119A (en) | 2013-09-30 | 2015-04-13 | 株式会社Screenホールディングス | Substrate processing device |
US20160018358A1 (en) | 2014-07-18 | 2016-01-21 | Eci Technology, Inc. | Analysis of silicon concentration in phosphoric acid etchant solutions |
JP6440111B2 (en) | 2014-08-14 | 2018-12-19 | 株式会社Screenホールディングス | Substrate processing method |
JP2016059855A (en) | 2014-09-17 | 2016-04-25 | 株式会社東芝 | Treatment apparatus and method for recycling treatment liquid |
HU231184B1 (en) * | 2014-10-08 | 2021-07-28 | CHINOIN Gyógyszer és Vegyészeti Termékek Gyára Zrt. | Treprostinyl-sodium-monohydrate and process for its preparation |
US10147619B2 (en) * | 2015-08-27 | 2018-12-04 | Toshiba Memory Corporation | Substrate treatment apparatus, substrate treatment method, and etchant |
US10373838B2 (en) | 2015-12-08 | 2019-08-06 | Elemental Scientific, Inc. | Automatic sampling of hot phosphoric acid for the determination of chemical element concentrations and control of semiconductor processes |
US10325779B2 (en) | 2016-03-30 | 2019-06-18 | Tokyo Electron Limited | Colloidal silica growth inhibitor and associated method and system |
CN108695201B (en) * | 2017-03-30 | 2023-08-08 | 东京毅力科创株式会社 | Weighing apparatus and method, substrate liquid processing apparatus and method, and storage medium |
-
2018
- 2018-12-24 KR KR1020180168622A patent/KR102084044B1/en active IP Right Grant
-
2019
- 2019-11-11 WO PCT/KR2019/015261 patent/WO2020138709A1/en active Application Filing
- 2019-11-11 CN CN201980085759.5A patent/CN113227771A/en active Pending
- 2019-11-11 SG SG11202105786PA patent/SG11202105786PA/en unknown
- 2019-11-11 US US17/299,070 patent/US20220146395A1/en active Pending
- 2019-11-11 JP JP2021529746A patent/JP7213348B2/en active Active
- 2019-12-17 TW TW108146280A patent/TWI728603B/en active
Also Published As
Publication number | Publication date |
---|---|
TWI728603B (en) | 2021-05-21 |
JP7213348B2 (en) | 2023-01-26 |
JP2022510629A (en) | 2022-01-27 |
KR102084044B1 (en) | 2020-03-03 |
TW202026639A (en) | 2020-07-16 |
CN113227771A (en) | 2021-08-06 |
US20220146395A1 (en) | 2022-05-12 |
WO2020138709A1 (en) | 2020-07-02 |
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