SG11202105786PA - Method for analyzing silicon concentration in phosphoric acid solution - Google Patents

Method for analyzing silicon concentration in phosphoric acid solution

Info

Publication number
SG11202105786PA
SG11202105786PA SG11202105786PA SG11202105786PA SG11202105786PA SG 11202105786P A SG11202105786P A SG 11202105786PA SG 11202105786P A SG11202105786P A SG 11202105786PA SG 11202105786P A SG11202105786P A SG 11202105786PA SG 11202105786P A SG11202105786P A SG 11202105786PA
Authority
SG
Singapore
Prior art keywords
phosphoric acid
acid solution
silicon concentration
analyzing silicon
analyzing
Prior art date
Application number
SG11202105786PA
Inventor
Seung Hun Lee
Seung Hyun Lee
Original Assignee
Semibooster Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semibooster Co Ltd filed Critical Semibooster Co Ltd
Publication of SG11202105786PA publication Critical patent/SG11202105786PA/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00Investigating or analyzing materials by the use of thermal means
    • G01N25/14Investigating or analyzing materials by the use of thermal means by using distillation, extraction, sublimation, condensation, freezing, or crystallisation
    • G01N25/142Investigating or analyzing materials by the use of thermal means by using distillation, extraction, sublimation, condensation, freezing, or crystallisation by condensation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/06Investigating concentration of particle suspensions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N9/00Investigating density or specific gravity of materials; Analysing materials by determining density or specific gravity
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/06Investigating concentration of particle suspensions
    • G01N2015/0687Investigating concentration of particle suspensions in solutions, e.g. non volatile residue
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Weting (AREA)
  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
SG11202105786PA 2018-12-24 2019-11-11 Method for analyzing silicon concentration in phosphoric acid solution SG11202105786PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180168622A KR102084044B1 (en) 2018-12-24 2018-12-24 Analysis method for silicon concentration in the phosphoric acid solution
PCT/KR2019/015261 WO2020138709A1 (en) 2018-12-24 2019-11-11 Method for analyzing silicon concentration in phosphoric acid solution

Publications (1)

Publication Number Publication Date
SG11202105786PA true SG11202105786PA (en) 2021-06-29

Family

ID=69937925

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202105786PA SG11202105786PA (en) 2018-12-24 2019-11-11 Method for analyzing silicon concentration in phosphoric acid solution

Country Status (7)

Country Link
US (1) US20220146395A1 (en)
JP (1) JP7213348B2 (en)
KR (1) KR102084044B1 (en)
CN (1) CN113227771A (en)
SG (1) SG11202105786PA (en)
TW (1) TWI728603B (en)
WO (1) WO2020138709A1 (en)

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1520273A (en) * 1974-07-06 1978-08-02 Fisons Ltd Phosphoric acid and gypsum from phosphatic material
US4060586A (en) * 1976-06-15 1977-11-29 Pennzoil Company Recovery of fluorides from gypsum
US4552974A (en) * 1982-12-07 1985-11-12 Asahi Kasei Kogyo Kabushiki Kaisha Process for producing diphenylmethane dicarbamates
JPS59172451A (en) * 1983-03-18 1984-09-29 Asahi Chem Ind Co Ltd Preparation of polyisocyanates
US4826986A (en) * 1986-06-16 1989-05-02 Eli Lilly And Company 6-Oxo-trans-octa- and decahydroquinolines
US5134143A (en) * 1986-06-16 1992-07-28 Eli Lilly And Company BCD tricyclic ergoline part-structure analogues
JPH09275091A (en) * 1996-04-03 1997-10-21 Mitsubishi Electric Corp Etching device of semiconductor nitride film
DE60135128D1 (en) * 2001-10-18 2008-09-11 Infineon Technologies Ag Device for determining the content of silicon dioxide
JP3788985B2 (en) * 2002-09-17 2006-06-21 エム・エフエスアイ株式会社 Etching solution regeneration method, etching method and etching apparatus
US7238295B2 (en) * 2002-09-17 2007-07-03 m·FSI Ltd. Regeneration process of etching solution, etching process, and etching system
TWI331775B (en) * 2005-05-17 2010-10-11 Apprecia Technology Inc Equipment and method for measuring silicon concentration in phosphoric acid solution
JP4202363B2 (en) 2005-09-14 2008-12-24 株式会社三井化学分析センター Method for determination of silicon in organosilicon compounds
JP4944558B2 (en) * 2006-10-12 2012-06-06 アプリシアテクノロジー株式会社 Etching solution regeneration method, etching method and etching apparatus
US8409997B2 (en) * 2007-01-25 2013-04-02 Taiwan Semiconductor Maufacturing Co., Ltd. Apparatus and method for controlling silicon nitride etching tank
JP2009058306A (en) * 2007-08-30 2009-03-19 Kurabo Ind Ltd Method and device for measuring dissolved inorganic material concentration in liquid, and etching liquid regeneration system with the same device
US20110133099A1 (en) * 2008-07-30 2011-06-09 Horiba Advanced Techno, Co., Ltd. Silicon concentration measuring instrument
US8008087B1 (en) * 2010-03-25 2011-08-30 Eci Technology, Inc. Analysis of silicon concentration in phosphoric acid etchant solutions
JP5829444B2 (en) * 2011-07-08 2015-12-09 株式会社Screenホールディングス Phosphoric acid regeneration method, phosphoric acid regeneration apparatus and substrate processing system
JP2013041923A (en) * 2011-08-12 2013-02-28 Apprecia Technology Inc Device for measuring silicon concentration in phosphate solution, and measuring method therefor
JP2015070119A (en) 2013-09-30 2015-04-13 株式会社Screenホールディングス Substrate processing device
US20160018358A1 (en) 2014-07-18 2016-01-21 Eci Technology, Inc. Analysis of silicon concentration in phosphoric acid etchant solutions
JP6440111B2 (en) 2014-08-14 2018-12-19 株式会社Screenホールディングス Substrate processing method
JP2016059855A (en) 2014-09-17 2016-04-25 株式会社東芝 Treatment apparatus and method for recycling treatment liquid
HU231184B1 (en) * 2014-10-08 2021-07-28 CHINOIN Gyógyszer és Vegyészeti Termékek Gyára Zrt. Treprostinyl-sodium-monohydrate and process for its preparation
US10147619B2 (en) * 2015-08-27 2018-12-04 Toshiba Memory Corporation Substrate treatment apparatus, substrate treatment method, and etchant
US10373838B2 (en) 2015-12-08 2019-08-06 Elemental Scientific, Inc. Automatic sampling of hot phosphoric acid for the determination of chemical element concentrations and control of semiconductor processes
US10325779B2 (en) 2016-03-30 2019-06-18 Tokyo Electron Limited Colloidal silica growth inhibitor and associated method and system
CN108695201B (en) * 2017-03-30 2023-08-08 东京毅力科创株式会社 Weighing apparatus and method, substrate liquid processing apparatus and method, and storage medium

Also Published As

Publication number Publication date
TWI728603B (en) 2021-05-21
JP7213348B2 (en) 2023-01-26
JP2022510629A (en) 2022-01-27
KR102084044B1 (en) 2020-03-03
TW202026639A (en) 2020-07-16
CN113227771A (en) 2021-08-06
US20220146395A1 (en) 2022-05-12
WO2020138709A1 (en) 2020-07-02

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