JP7212437B2 - 半導体デバイス、その製造方法および半導体製造システム - Google Patents

半導体デバイス、その製造方法および半導体製造システム Download PDF

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JP7212437B2
JP7212437B2 JP2020518622A JP2020518622A JP7212437B2 JP 7212437 B2 JP7212437 B2 JP 7212437B2 JP 2020518622 A JP2020518622 A JP 2020518622A JP 2020518622 A JP2020518622 A JP 2020518622A JP 7212437 B2 JP7212437 B2 JP 7212437B2
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type layer
junction
group
forming
narrow bandgap
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JP2020537335A (ja
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デソーザ、ジョエル、ペレイラ
リー、ニン
ヤオ、ヤオ
サダナ、デヴェンドラ
リー、ユンセオ
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3

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JP2020518622A 2017-10-16 2018-09-21 半導体デバイス、その製造方法および半導体製造システム Active JP7212437B2 (ja)

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Application Number Priority Date Filing Date Title
US15/784,384 2017-10-16
US15/784,384 US10158039B1 (en) 2017-10-16 2017-10-16 Heterojunction diode having a narrow bandgap semiconductor
PCT/IB2018/057288 WO2019077424A1 (en) 2017-10-16 2018-09-21 HETEROJUNCTION DIODE HAVING A NARROW PROHIBITED BAND SEMICONDUCTOR

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JP2020537335A JP2020537335A (ja) 2020-12-17
JP2020537335A5 JP2020537335A5 (https=) 2021-02-04
JP7212437B2 true JP7212437B2 (ja) 2023-01-25

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US (1) US10158039B1 (https=)
JP (1) JP7212437B2 (https=)
CN (1) CN111213246B (https=)
DE (1) DE112018004549T5 (https=)
GB (1) GB2580827B (https=)
WO (1) WO2019077424A1 (https=)

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CN111952385B (zh) * 2020-08-21 2022-08-02 中国科学院长春光学精密机械与物理研究所 一种二维材料极化激元与异质结结合的红外光探测器
WO2024004520A1 (ja) 2022-06-30 2024-01-04 パナソニックＩｐマネジメント株式会社 二次電池用負極材料、および、二次電池
CN116344659A (zh) * 2023-01-09 2023-06-27 中国科学院半导体研究所 红外光电器件及其制备方法与硅基光电集成芯片

Citations (4)

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WO2012036118A1 (ja) 2010-09-13 2012-03-22 株式会社 村田製作所 フォトダイオード、及び紫外線センサ
JP2013102093A (ja) 2011-11-09 2013-05-23 Stanley Electric Co Ltd 半導体素子の製造方法及び半導体素子
JP2014093327A (ja) 2012-10-31 2014-05-19 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
JP2014225597A (ja) 2013-05-17 2014-12-04 日本碍子株式会社 光起電力素子

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JP3498140B2 (ja) * 2001-01-25 2004-02-16 独立行政法人産業技術総合研究所 半導体発光素子
EP2115782A1 (en) 2007-01-30 2009-11-11 Solasta, Inc. Photovoltaic cell and method of making thereof
US20100116329A1 (en) 2008-06-09 2010-05-13 Fitzgerald Eugene A Methods of forming high-efficiency solar cell structures
US8293628B2 (en) 2009-05-28 2012-10-23 Technion Research & Development Foundation Ltd. Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof
US7928389B1 (en) 2009-08-20 2011-04-19 Hrl Laboratories, Llc Wide bandwidth infrared detector and imager
CN101866999B (zh) * 2010-05-19 2012-09-05 中国科学院半导体研究所 制作ZnO基异质结发光二极管的方法
FR2982079A1 (fr) 2011-10-28 2013-05-03 Commissariat Energie Atomique Imageur cmos utbb
CN102394263A (zh) * 2011-11-22 2012-03-28 中国科学院半导体研究所 增强n-ZnO/AlN/p-GaN发光二极管的电致发光性能的方法
EA201201245A1 (ru) 2012-09-14 2013-07-30 Ооо "Лед Микросенсор Нт" Способ изготовления гетероструктур (варианты) для среднего ик-диапазона, гетероструктура (варианты) и светодиод и фотодиод на основе этой гетероструктуры
US9673252B1 (en) 2014-08-13 2017-06-06 Lockheed Martin Corporation Field-assisted infrared detector with unipolar barrier
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WO2012036118A1 (ja) 2010-09-13 2012-03-22 株式会社 村田製作所 フォトダイオード、及び紫外線センサ
JP2013102093A (ja) 2011-11-09 2013-05-23 Stanley Electric Co Ltd 半導体素子の製造方法及び半導体素子
JP2014093327A (ja) 2012-10-31 2014-05-19 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
JP2014225597A (ja) 2013-05-17 2014-12-04 日本碍子株式会社 光起電力素子

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GB202004615D0 (en) 2020-05-13
GB2580827A (en) 2020-07-29
GB2580827B (en) 2022-02-23
WO2019077424A1 (en) 2019-04-25
CN111213246B (zh) 2023-10-31
CN111213246A (zh) 2020-05-29
DE112018004549T5 (de) 2020-05-28
US10158039B1 (en) 2018-12-18
JP2020537335A (ja) 2020-12-17

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