EA201201245A1 - Способ изготовления гетероструктур (варианты) для среднего ик-диапазона, гетероструктура (варианты) и светодиод и фотодиод на основе этой гетероструктуры - Google Patents

Способ изготовления гетероструктур (варианты) для среднего ик-диапазона, гетероструктура (варианты) и светодиод и фотодиод на основе этой гетероструктуры

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EA201201245A1
EA201201245A1 EA201201245A EA201201245A EA201201245A1 EA 201201245 A1 EA201201245 A1 EA 201201245A1 EA 201201245 A EA201201245 A EA 201201245A EA 201201245 A EA201201245 A EA 201201245A EA 201201245 A1 EA201201245 A1 EA 201201245A1
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heterostructure
range
manufacturing
substrate
inas
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EA201201245A
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English (en)
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EA018435B1 (ru
Inventor
Сергей Сергеевич КИЖАЕВ
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Ооо "Лед Микросенсор Нт"
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Priority to EA201201245A priority Critical patent/EA201201245A1/ru
Publication of EA018435B1 publication Critical patent/EA018435B1/ru
Publication of EA201201245A1 publication Critical patent/EA201201245A1/ru
Priority to EP13874680.5A priority patent/EP2897158A4/en
Priority to JP2015531882A priority patent/JP2015534270A/ja
Priority to PCT/RU2013/000796 priority patent/WO2014123448A1/ru
Priority to US14/659,277 priority patent/US20180040766A9/en

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    • H—ELECTRICITY
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    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract

Изобретение относится к технологии изготовления источников спонтанного излучения на основе полупроводниковых соединений типа АBдля спектрального диапазона 2,6-4,7 мкм и к технологии изготовления фоточувствительных структур для спектрального диапазона 2,0-4,7 мкм. По первому варианту реализации гетероструктура содержит подложку, содержащую InAs, барьерный слой, содержащий InSbP и расположенный на подложке, активный слой, содержащий InAsSbP и расположенный на барьерном слое. Светодиоды, изготовленные на основе первого варианта гетероструктуры, излучают на длине волны из диапазона 2,6-3,1 мкм. По второму варианту реализации гетероструктура содержит подложку, содержащую InAs, активную область, содержащую InAsSb и расположенную на подложке, барьерный слой, содержащий InSbP и расположенный на активной области. Активная область может содержать объёмный активный слой InAsSb, квантовые ямы InAs/lnAsSb или напряжённую сверхрешётку GalnAs/lnAsSb. Светодиоды, изготовленные на основе второго варианта гетероструктуры, излучают на длине волны из диапазона 3,1-4,7 мкм, а фотодиоды обладают широкополосной чувствительностью в диапазоне 2,0-4,7 мкм. В способе изготовления гетероструктуры в качестве источника мышьяка используют трет-бутиларсин, а в качестве источника фосфора используют трет-бутилфосфин.
EA201201245A 2012-09-14 2012-09-14 Способ изготовления гетероструктур (варианты) для среднего ик-диапазона, гетероструктура (варианты) и светодиод и фотодиод на основе этой гетероструктуры EA201201245A1 (ru)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EA201201245A EA201201245A1 (ru) 2012-09-14 2012-09-14 Способ изготовления гетероструктур (варианты) для среднего ик-диапазона, гетероструктура (варианты) и светодиод и фотодиод на основе этой гетероструктуры
EP13874680.5A EP2897158A4 (en) 2012-09-14 2013-09-13 PREPARATION OF HETEROSTRUCTURES (VARIANTS) FOR THE MEDIUM INFRARED AREA
JP2015531882A JP2015534270A (ja) 2012-09-14 2013-09-13 中赤外スペクトル範囲用のヘテロ構造ならびに、これをベースとした発光ダイオードおよびフォトダイオードの製造方法
PCT/RU2013/000796 WO2014123448A1 (ru) 2012-09-14 2013-09-13 Изготовление гетероструктур (варианты) для среднего ик- диапазона
US14/659,277 US20180040766A9 (en) 2012-09-14 2015-03-16 Method for manufacturing heterostructures for middle infrared band, a heterostructure, and a light-emitting diode and a photodiode based thereon

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EA201201245A EA201201245A1 (ru) 2012-09-14 2012-09-14 Способ изготовления гетероструктур (варианты) для среднего ик-диапазона, гетероструктура (варианты) и светодиод и фотодиод на основе этой гетероструктуры

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EA018435B1 EA018435B1 (ru) 2013-07-30
EA201201245A1 true EA201201245A1 (ru) 2013-07-30

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US (1) US20180040766A9 (ru)
EP (1) EP2897158A4 (ru)
JP (1) JP2015534270A (ru)
EA (1) EA201201245A1 (ru)
WO (1) WO2014123448A1 (ru)

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EA027273B1 (ru) * 2014-12-24 2017-07-31 Общество С Ограниченной Ответственностью "Микросенсор Технолоджи" Устройство для определения химических веществ в анализируемой среде
EA030952B1 (ru) * 2014-12-24 2018-10-31 Общество С Ограниченной Ответственностью "Микросенсор Технолоджи" Светодиодный излучатель
RU2726903C1 (ru) * 2019-11-19 2020-07-16 Общество с ограниченной ответственностью "ИоффеЛЕД" Способ изготовления фотодиодов средневолнового ик-диапазона спектра

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WO2016105229A1 (ru) * 2014-12-24 2016-06-30 Общество С Ограниченной Ответственностью "Микросенсор Технолоджи" Светодиодный излучатель
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WO2017105274A1 (ru) * 2015-12-18 2017-06-22 Обществество С Ограниченной Ответственностью "Микросенсор Технолоджи" Миниатюрная оптическая ячейка на основе светодиодов спектрального диапазона 1600-5000 нм
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RU2647979C1 (ru) * 2016-11-17 2018-03-21 Общество с ограниченной ответственностью "ИоффеЛЕД" Способ изготовления диодов средневолнового ик диапазона спектра
JP6881027B2 (ja) * 2017-05-24 2021-06-02 住友電気工業株式会社 半導体受光素子、及び半導体受光素子の製造方法
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JP6903210B2 (ja) * 2019-10-15 2021-07-14 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子及びその製造方法

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US20160276528A1 (en) 2016-09-22
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