JP2020537335A5 - - Google Patents
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- Publication number
- JP2020537335A5 JP2020537335A5 JP2020518622A JP2020518622A JP2020537335A5 JP 2020537335 A5 JP2020537335 A5 JP 2020537335A5 JP 2020518622 A JP2020518622 A JP 2020518622A JP 2020518622 A JP2020518622 A JP 2020518622A JP 2020537335 A5 JP2020537335 A5 JP 2020537335A5
- Authority
- JP
- Japan
- Prior art keywords
- type layer
- group
- junction
- semiconductor device
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 claims 14
- 239000000463 material Substances 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000011787 zinc oxide Substances 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 229910052787 antimony Inorganic materials 0.000 claims 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 2
- 238000000231 atomic layer deposition Methods 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/784,384 | 2017-10-16 | ||
| US15/784,384 US10158039B1 (en) | 2017-10-16 | 2017-10-16 | Heterojunction diode having a narrow bandgap semiconductor |
| PCT/IB2018/057288 WO2019077424A1 (en) | 2017-10-16 | 2018-09-21 | HETEROJUNCTION DIODE HAVING A NARROW PROHIBITED BAND SEMICONDUCTOR |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020537335A JP2020537335A (ja) | 2020-12-17 |
| JP2020537335A5 true JP2020537335A5 (https=) | 2021-02-04 |
| JP7212437B2 JP7212437B2 (ja) | 2023-01-25 |
Family
ID=64604839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020518622A Active JP7212437B2 (ja) | 2017-10-16 | 2018-09-21 | 半導体デバイス、その製造方法および半導体製造システム |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10158039B1 (https=) |
| JP (1) | JP7212437B2 (https=) |
| CN (1) | CN111213246B (https=) |
| DE (1) | DE112018004549T5 (https=) |
| GB (1) | GB2580827B (https=) |
| WO (1) | WO2019077424A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111952385B (zh) * | 2020-08-21 | 2022-08-02 | 中国科学院长春光学精密机械与物理研究所 | 一种二维材料极化激元与异质结结合的红外光探测器 |
| WO2024004520A1 (ja) | 2022-06-30 | 2024-01-04 | パナソニックＩｐマネジメント株式会社 | 二次電池用負極材料、および、二次電池 |
| CN116344659A (zh) * | 2023-01-09 | 2023-06-27 | 中国科学院半导体研究所 | 红外光电器件及其制备方法与硅基光电集成芯片 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3498140B2 (ja) * | 2001-01-25 | 2004-02-16 | 独立行政法人産業技術総合研究所 | 半導体発光素子 |
| EP2115782A1 (en) | 2007-01-30 | 2009-11-11 | Solasta, Inc. | Photovoltaic cell and method of making thereof |
| US20100116329A1 (en) | 2008-06-09 | 2010-05-13 | Fitzgerald Eugene A | Methods of forming high-efficiency solar cell structures |
| US8293628B2 (en) | 2009-05-28 | 2012-10-23 | Technion Research & Development Foundation Ltd. | Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof |
| US7928389B1 (en) | 2009-08-20 | 2011-04-19 | Hrl Laboratories, Llc | Wide bandwidth infrared detector and imager |
| CN101866999B (zh) * | 2010-05-19 | 2012-09-05 | 中国科学院半导体研究所 | 制作ZnO基异质结发光二极管的方法 |
| JP5392414B2 (ja) * | 2010-09-13 | 2014-01-22 | 株式会社村田製作所 | フォトダイオード、及び紫外線センサ |
| FR2982079A1 (fr) | 2011-10-28 | 2013-05-03 | Commissariat Energie Atomique | Imageur cmos utbb |
| JP2013102093A (ja) * | 2011-11-09 | 2013-05-23 | Stanley Electric Co Ltd | 半導体素子の製造方法及び半導体素子 |
| CN102394263A (zh) * | 2011-11-22 | 2012-03-28 | 中国科学院半导体研究所 | 增强n-ZnO/AlN/p-GaN发光二极管的电致发光性能的方法 |
| EA201201245A1 (ru) | 2012-09-14 | 2013-07-30 | Ооо "Лед Микросенсор Нт" | Способ изготовления гетероструктур (варианты) для среднего ик-диапазона, гетероструктура (варианты) и светодиод и фотодиод на основе этой гетероструктуры |
| JP6177515B2 (ja) * | 2012-10-31 | 2017-08-09 | 富士フイルム株式会社 | 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス |
| JP2014225597A (ja) * | 2013-05-17 | 2014-12-04 | 日本碍子株式会社 | 光起電力素子 |
| US9673252B1 (en) | 2014-08-13 | 2017-06-06 | Lockheed Martin Corporation | Field-assisted infrared detector with unipolar barrier |
| US9324813B2 (en) * | 2014-09-30 | 2016-04-26 | International Business Machines Corporation | Doped zinc oxide as N+ layer for semiconductor devices |
| US9581760B2 (en) * | 2015-01-26 | 2017-02-28 | Advalue Photonics, Inc. | Rare-earth doped gain fibers |
| US9653570B2 (en) * | 2015-02-12 | 2017-05-16 | International Business Machines Corporation | Junction interlayer dielectric for reducing leakage current in semiconductor devices |
| US9748412B2 (en) * | 2015-06-01 | 2017-08-29 | International Business Machines Corporation | Highly responsive III-V photodetectors using ZnO:Al as N-type emitter |
| US10439106B2 (en) * | 2015-06-30 | 2019-10-08 | International Business Machines Corporation | Light emitting diode with ZnO emitter |
-
2017
- 2017-10-16 US US15/784,384 patent/US10158039B1/en not_active Expired - Fee Related
-
2018
- 2018-09-21 GB GB2004615.7A patent/GB2580827B/en active Active
- 2018-09-21 JP JP2020518622A patent/JP7212437B2/ja active Active
- 2018-09-21 DE DE112018004549.8T patent/DE112018004549T5/de active Pending
- 2018-09-21 WO PCT/IB2018/057288 patent/WO2019077424A1/en not_active Ceased
- 2018-09-21 CN CN201880067071.XA patent/CN111213246B/zh not_active Expired - Fee Related
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