GB2580827B - Heterojunction Diode having a narrow bandgap semiconductor - Google Patents

Heterojunction Diode having a narrow bandgap semiconductor Download PDF

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Publication number
GB2580827B
GB2580827B GB2004615.7A GB202004615A GB2580827B GB 2580827 B GB2580827 B GB 2580827B GB 202004615 A GB202004615 A GB 202004615A GB 2580827 B GB2580827 B GB 2580827B
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United Kingdom
Prior art keywords
bandgap semiconductor
narrow bandgap
heterojunction diode
heterojunction
diode
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Active
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GB2004615.7A
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English (en)
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GB202004615D0 (en
GB2580827A (en
Inventor
Pereira De Souza Joel
Li Ning
Yao Yao
Sadana Devendra
Seog Lee Yun
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International Business Machines Corp
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International Business Machines Corp
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Publication of GB2580827A publication Critical patent/GB2580827A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2912—Antimonides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3422—Antimonides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
GB2004615.7A 2017-10-16 2018-09-21 Heterojunction Diode having a narrow bandgap semiconductor Active GB2580827B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/784,384 US10158039B1 (en) 2017-10-16 2017-10-16 Heterojunction diode having a narrow bandgap semiconductor
PCT/IB2018/057288 WO2019077424A1 (en) 2017-10-16 2018-09-21 HETEROJUNCTION DIODE HAVING A NARROW PROHIBITED BAND SEMICONDUCTOR

Publications (3)

Publication Number Publication Date
GB202004615D0 GB202004615D0 (en) 2020-05-13
GB2580827A GB2580827A (en) 2020-07-29
GB2580827B true GB2580827B (en) 2022-02-23

Family

ID=64604839

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2004615.7A Active GB2580827B (en) 2017-10-16 2018-09-21 Heterojunction Diode having a narrow bandgap semiconductor

Country Status (6)

Country Link
US (1) US10158039B1 (https=)
JP (1) JP7212437B2 (https=)
CN (1) CN111213246B (https=)
DE (1) DE112018004549T5 (https=)
GB (1) GB2580827B (https=)
WO (1) WO2019077424A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111952385B (zh) * 2020-08-21 2022-08-02 中国科学院长春光学精密机械与物理研究所 一种二维材料极化激元与异质结结合的红外光探测器
WO2024004520A1 (ja) 2022-06-30 2024-01-04 パナソニックＩｐマネジメント株式会社 二次電池用負極材料、および、二次電池
CN116344659A (zh) * 2023-01-09 2023-06-27 中国科学院半导体研究所 红外光电器件及其制备方法与硅基光电集成芯片

Citations (5)

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JP2002222991A (ja) * 2001-01-25 2002-08-09 National Institute Of Advanced Industrial & Technology 半導体発光素子
CN101866999A (zh) * 2010-05-19 2010-10-20 中国科学院半导体研究所 制作ZnO基异质结发光二极管的方法
CN102394263A (zh) * 2011-11-22 2012-03-28 中国科学院半导体研究所 增强n-ZnO/AlN/p-GaN发光二极管的电致发光性能的方法
US20160093701A1 (en) * 2014-09-30 2016-03-31 International Business Machines Corporation Doped zinc oxide as n+ layer for semiconductor devices
US20160240610A1 (en) * 2015-02-12 2016-08-18 International Business Machines Corporation Junction interlayer dielectric for reducing leakage current in semiconductor devices

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EP2115782A1 (en) 2007-01-30 2009-11-11 Solasta, Inc. Photovoltaic cell and method of making thereof
US20100116329A1 (en) 2008-06-09 2010-05-13 Fitzgerald Eugene A Methods of forming high-efficiency solar cell structures
US8293628B2 (en) 2009-05-28 2012-10-23 Technion Research & Development Foundation Ltd. Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof
US7928389B1 (en) 2009-08-20 2011-04-19 Hrl Laboratories, Llc Wide bandwidth infrared detector and imager
JP5392414B2 (ja) * 2010-09-13 2014-01-22 株式会社村田製作所 フォトダイオード、及び紫外線センサ
FR2982079A1 (fr) 2011-10-28 2013-05-03 Commissariat Energie Atomique Imageur cmos utbb
JP2013102093A (ja) * 2011-11-09 2013-05-23 Stanley Electric Co Ltd 半導体素子の製造方法及び半導体素子
EA201201245A1 (ru) 2012-09-14 2013-07-30 Ооо "Лед Микросенсор Нт" Способ изготовления гетероструктур (варианты) для среднего ик-диапазона, гетероструктура (варианты) и светодиод и фотодиод на основе этой гетероструктуры
JP6177515B2 (ja) * 2012-10-31 2017-08-09 富士フイルム株式会社 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
JP2014225597A (ja) * 2013-05-17 2014-12-04 日本碍子株式会社 光起電力素子
US9673252B1 (en) 2014-08-13 2017-06-06 Lockheed Martin Corporation Field-assisted infrared detector with unipolar barrier
US9581760B2 (en) * 2015-01-26 2017-02-28 Advalue Photonics, Inc. Rare-earth doped gain fibers
US9748412B2 (en) * 2015-06-01 2017-08-29 International Business Machines Corporation Highly responsive III-V photodetectors using ZnO:Al as N-type emitter
US10439106B2 (en) * 2015-06-30 2019-10-08 International Business Machines Corporation Light emitting diode with ZnO emitter

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222991A (ja) * 2001-01-25 2002-08-09 National Institute Of Advanced Industrial & Technology 半導体発光素子
CN101866999A (zh) * 2010-05-19 2010-10-20 中国科学院半导体研究所 制作ZnO基异质结发光二极管的方法
CN102394263A (zh) * 2011-11-22 2012-03-28 中国科学院半导体研究所 增强n-ZnO/AlN/p-GaN发光二极管的电致发光性能的方法
US20160093701A1 (en) * 2014-09-30 2016-03-31 International Business Machines Corporation Doped zinc oxide as n+ layer for semiconductor devices
US20160240610A1 (en) * 2015-02-12 2016-08-18 International Business Machines Corporation Junction interlayer dielectric for reducing leakage current in semiconductor devices

Also Published As

Publication number Publication date
GB202004615D0 (en) 2020-05-13
GB2580827A (en) 2020-07-29
WO2019077424A1 (en) 2019-04-25
CN111213246B (zh) 2023-10-31
CN111213246A (zh) 2020-05-29
JP7212437B2 (ja) 2023-01-25
DE112018004549T5 (de) 2020-05-28
US10158039B1 (en) 2018-12-18
JP2020537335A (ja) 2020-12-17

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