FR3017242B1 - Diode schottky verticale au nitrure de gallium - Google Patents
Diode schottky verticale au nitrure de galliumInfo
- Publication number
- FR3017242B1 FR3017242B1 FR1450886A FR1450886A FR3017242B1 FR 3017242 B1 FR3017242 B1 FR 3017242B1 FR 1450886 A FR1450886 A FR 1450886A FR 1450886 A FR1450886 A FR 1450886A FR 3017242 B1 FR3017242 B1 FR 3017242B1
- Authority
- FR
- France
- Prior art keywords
- gallium nitride
- schottky diode
- vertical schottky
- vertical
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910002601 GaN Inorganic materials 0.000 title 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1450886A FR3017242B1 (fr) | 2014-02-05 | 2014-02-05 | Diode schottky verticale au nitrure de gallium |
US14/607,577 US20150221782A1 (en) | 2014-02-05 | 2015-01-28 | Vertical gallium nitride schottky diode |
CN201510058744.3A CN104821341A (zh) | 2014-02-05 | 2015-02-04 | 垂直氮化镓肖特基二极管 |
CN201520079978.1U CN204516775U (zh) | 2014-02-05 | 2015-02-04 | 肖特基二极管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1450886A FR3017242B1 (fr) | 2014-02-05 | 2014-02-05 | Diode schottky verticale au nitrure de gallium |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3017242A1 FR3017242A1 (fr) | 2015-08-07 |
FR3017242B1 true FR3017242B1 (fr) | 2017-09-01 |
Family
ID=51063539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1450886A Active FR3017242B1 (fr) | 2014-02-05 | 2014-02-05 | Diode schottky verticale au nitrure de gallium |
Country Status (3)
Country | Link |
---|---|
US (1) | US20150221782A1 (fr) |
CN (2) | CN104821341A (fr) |
FR (1) | FR3017242B1 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3017242B1 (fr) * | 2014-02-05 | 2017-09-01 | St Microelectronics Tours Sas | Diode schottky verticale au nitrure de gallium |
CN106098795A (zh) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | 一种二极管用外延片及其制备方法 |
CN106098794A (zh) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | 二极管用外延片及其制备方法 |
CN106098747A (zh) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | 一种肖特基二极管用外延片及其制备方法 |
CN106098797A (zh) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | 一种二极管用外延片及其制备方法 |
CN106098796A (zh) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | 二极管用外延片及其制备方法 |
CN106784022A (zh) * | 2016-12-20 | 2017-05-31 | 英诺赛科(珠海)科技有限公司 | Sbd器件及其制备方法 |
CN109473483B (zh) * | 2017-09-08 | 2022-04-01 | 世界先进积体电路股份有限公司 | 半导体装置及其制造方法 |
CN111192928B (zh) * | 2020-01-09 | 2021-08-13 | 西安交通大学 | 一种高击穿电压低反向漏电的垂直GaN肖特基器件结构 |
CN111933744B (zh) * | 2020-09-23 | 2021-01-12 | 同方威视技术股份有限公司 | 肖特基二极管封装结构及其制备方法 |
CN112993054B (zh) * | 2021-02-05 | 2022-09-20 | 中国电子科技集团公司第十三研究所 | 倍频器及其制备方法 |
CN112968065B (zh) * | 2021-02-05 | 2022-08-30 | 中国电子科技集团公司第十三研究所 | 一种垂直结构的氮化镓太赫兹二极管及制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100348269B1 (ko) * | 2000-03-22 | 2002-08-09 | 엘지전자 주식회사 | 루데니움 산화물을 이용한 쇼트키 콘택 방법 |
FR2844099B1 (fr) * | 2002-09-03 | 2005-09-02 | Commissariat Energie Atomique | Dispositif semiconducteur de puissance quasi-vertical sur substrat composite |
JP4567426B2 (ja) * | 2004-11-25 | 2010-10-20 | パナソニック株式会社 | ショットキーバリアダイオード及びダイオードアレイ |
US8013414B2 (en) * | 2009-02-18 | 2011-09-06 | Alpha & Omega Semiconductor, Inc. | Gallium nitride semiconductor device with improved forward conduction |
CN102054875B (zh) * | 2010-10-29 | 2012-10-17 | 中山大学 | 一种功率型GaN基肖特基二极管及其制作方法 |
FR3017242B1 (fr) * | 2014-02-05 | 2017-09-01 | St Microelectronics Tours Sas | Diode schottky verticale au nitrure de gallium |
-
2014
- 2014-02-05 FR FR1450886A patent/FR3017242B1/fr active Active
-
2015
- 2015-01-28 US US14/607,577 patent/US20150221782A1/en not_active Abandoned
- 2015-02-04 CN CN201510058744.3A patent/CN104821341A/zh active Pending
- 2015-02-04 CN CN201520079978.1U patent/CN204516775U/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20150221782A1 (en) | 2015-08-06 |
CN204516775U (zh) | 2015-07-29 |
FR3017242A1 (fr) | 2015-08-07 |
CN104821341A (zh) | 2015-08-05 |
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