CN111213246B - 具有窄带隙半导体的异质结二极管 - Google Patents

具有窄带隙半导体的异质结二极管 Download PDF

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Publication number
CN111213246B
CN111213246B CN201880067071.XA CN201880067071A CN111213246B CN 111213246 B CN111213246 B CN 111213246B CN 201880067071 A CN201880067071 A CN 201880067071A CN 111213246 B CN111213246 B CN 111213246B
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type layer
junction
narrow bandgap
group
semiconductor device
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Chinese (zh)
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CN111213246A (zh
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J·P·德苏扎
李宁
姚瑶
D·萨达纳
李允锡
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2912—Antimonides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3422—Antimonides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3

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  • Manufacturing & Machinery (AREA)
CN201880067071.XA 2017-10-16 2018-09-21 具有窄带隙半导体的异质结二极管 Expired - Fee Related CN111213246B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/784,384 2017-10-16
US15/784,384 US10158039B1 (en) 2017-10-16 2017-10-16 Heterojunction diode having a narrow bandgap semiconductor
PCT/IB2018/057288 WO2019077424A1 (en) 2017-10-16 2018-09-21 HETEROJUNCTION DIODE HAVING A NARROW PROHIBITED BAND SEMICONDUCTOR

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CN111213246A CN111213246A (zh) 2020-05-29
CN111213246B true CN111213246B (zh) 2023-10-31

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US (1) US10158039B1 (https=)
JP (1) JP7212437B2 (https=)
CN (1) CN111213246B (https=)
DE (1) DE112018004549T5 (https=)
GB (1) GB2580827B (https=)
WO (1) WO2019077424A1 (https=)

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CN111952385B (zh) * 2020-08-21 2022-08-02 中国科学院长春光学精密机械与物理研究所 一种二维材料极化激元与异质结结合的红外光探测器
WO2024004520A1 (ja) 2022-06-30 2024-01-04 パナソニックＩｐマネジメント株式会社 二次電池用負極材料、および、二次電池
CN116344659A (zh) * 2023-01-09 2023-06-27 中国科学院半导体研究所 红外光电器件及其制备方法与硅基光电集成芯片

Citations (3)

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JP2013102093A (ja) * 2011-11-09 2013-05-23 Stanley Electric Co Ltd 半導体素子の製造方法及び半導体素子
JP2014093327A (ja) * 2012-10-31 2014-05-19 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
JP2014225597A (ja) * 2013-05-17 2014-12-04 日本碍子株式会社 光起電力素子

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JP3498140B2 (ja) * 2001-01-25 2004-02-16 独立行政法人産業技術総合研究所 半導体発光素子
EP2115782A1 (en) 2007-01-30 2009-11-11 Solasta, Inc. Photovoltaic cell and method of making thereof
US20100116329A1 (en) 2008-06-09 2010-05-13 Fitzgerald Eugene A Methods of forming high-efficiency solar cell structures
US8293628B2 (en) 2009-05-28 2012-10-23 Technion Research & Development Foundation Ltd. Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof
US7928389B1 (en) 2009-08-20 2011-04-19 Hrl Laboratories, Llc Wide bandwidth infrared detector and imager
CN101866999B (zh) * 2010-05-19 2012-09-05 中国科学院半导体研究所 制作ZnO基异质结发光二极管的方法
JP5392414B2 (ja) * 2010-09-13 2014-01-22 株式会社村田製作所 フォトダイオード、及び紫外線センサ
FR2982079A1 (fr) 2011-10-28 2013-05-03 Commissariat Energie Atomique Imageur cmos utbb
CN102394263A (zh) * 2011-11-22 2012-03-28 中国科学院半导体研究所 增强n-ZnO/AlN/p-GaN发光二极管的电致发光性能的方法
EA201201245A1 (ru) 2012-09-14 2013-07-30 Ооо "Лед Микросенсор Нт" Способ изготовления гетероструктур (варианты) для среднего ик-диапазона, гетероструктура (варианты) и светодиод и фотодиод на основе этой гетероструктуры
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US9748412B2 (en) * 2015-06-01 2017-08-29 International Business Machines Corporation Highly responsive III-V photodetectors using ZnO:Al as N-type emitter
US10439106B2 (en) * 2015-06-30 2019-10-08 International Business Machines Corporation Light emitting diode with ZnO emitter

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JP2013102093A (ja) * 2011-11-09 2013-05-23 Stanley Electric Co Ltd 半導体素子の製造方法及び半導体素子
JP2014093327A (ja) * 2012-10-31 2014-05-19 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
JP2014225597A (ja) * 2013-05-17 2014-12-04 日本碍子株式会社 光起電力素子

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GB202004615D0 (en) 2020-05-13
GB2580827A (en) 2020-07-29
GB2580827B (en) 2022-02-23
WO2019077424A1 (en) 2019-04-25
CN111213246A (zh) 2020-05-29
JP7212437B2 (ja) 2023-01-25
DE112018004549T5 (de) 2020-05-28
US10158039B1 (en) 2018-12-18
JP2020537335A (ja) 2020-12-17

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