TW201327855A - 太陽能電池 - Google Patents
太陽能電池 Download PDFInfo
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- TW201327855A TW201327855A TW100148322A TW100148322A TW201327855A TW 201327855 A TW201327855 A TW 201327855A TW 100148322 A TW100148322 A TW 100148322A TW 100148322 A TW100148322 A TW 100148322A TW 201327855 A TW201327855 A TW 201327855A
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- copper indium
- indium gallium
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- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000006243 chemical reaction Methods 0.000 claims abstract description 37
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 47
- 229910052732 germanium Inorganic materials 0.000 claims description 24
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 24
- 229910052715 tantalum Inorganic materials 0.000 claims description 24
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 24
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 10
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
一種太陽能電池，包括一第一導電層、一光電轉換層以及一第二導電層。光電轉換層位於第一導電層上方。光電轉換層包含一硒化銅銦鎵層以及一矽基材。硒化銅銦鎵層接觸矽基材，使硒化銅銦鎵層與矽基材間形成一異質PN接面。第二導電層位於光電轉換層上方。
Description
本發明是有關於一種太陽能電池。
太陽能似乎是一種用之不竭的能源，因此太陽能的相關研究引起許多注意。太陽能電池便是為了將太陽能直接轉換成電能而開發的裝置。
近年來，硒化銅銦鎵薄膜太陽能電池受到極大關注，因為硒化銅銦鎵(Copper indium gallium(di)selenide,CIGS)薄膜具有較佳的光電轉換效率。CIGS薄膜必須與一N型半導體材料搭配並形成一PN接面，才能成為太陽能電池。在目前的技術中，以硫化鎘(CdS)搭配CIGS的光電轉換效率最高。但是，硫化鎘卻是污染性極高的材料，許多國家不允許使用硫化鎘。因此，也造成CIGS薄膜太陽能電池的應用受到很大的限制。
有鑑於此，目前亟需一種改良的太陽電池，期能具有高的光電轉換效率，並能符合環境保護的要求。
本發明之一目的係提供一種太陽能電池，俾能具有高光電轉換效率以及高開路電壓。
本發明之另一目的係提供一種太陽能電池，其中不包含硫化鎘之高污染性物質。
本發明之再一目的係提供一種太陽能電池，俾能在高溫下維持較佳的光電轉換效率。
此太陽能電池包括一第一導電層、一光電轉換層以及一第二導電層。光電轉換層用以將光線轉換為電能。光電轉換層位於第一導電層上方。光電轉換層包含一硒化銅銦鎵層以及一矽基材。硒化銅銦鎵層接觸矽基材，使硒化銅銦鎵層與矽基材間形成一異質PN接面。第二導電層位於光電轉換層上方。第一及第二導電層用以傳輸電能。
為了使本揭示內容的敘述更加詳盡與完備，下文針對了本發明的實施態樣與具體實施例提出了說明性的描述；但這並非實施或運用本發明具體實施例的唯一形式。以下所揭露的各實施例，在有益的情形下可相互組合或取代，也可在一實施例中附加其他的實施例，而無須進一步的記載或說明。
在以下描述中，將詳細敘述許多特定細節以使讀者能夠充分理解以下的實施例。然而，可在無此等特定細節之情況下實踐本發明之實施例。在其他情況下，為簡化圖式，熟知的結構與裝置僅示意性地繪示於圖中。
第1A圖繪示本發明一實施方式之太陽能電池100的剖面示意圖。太陽能電池100包括第一導電層110、光電轉換層120以及第二導電層130。
光電轉換層120位於第一導電層110與第二導電層130之間，並且電性連接第一導電層110以及第二導電層130。光電轉換層120可將光線轉換為電能，所產生的電能經由第一導電層110以及第二導電層130傳輸至一外部負載裝置(未繪示)。
光電轉換層120包含硒化銅銦鎵層122以及矽基材124。硒化銅銦鎵層122接觸矽基材124，使硒化銅銦鎵層122與矽基材124間形成一異質PN接面123。
根據本發明之一實施例，光電轉換層120中不包含硫化鎘。在習知技術中，通常會形成一硫化鎘層於硒化銅銦鎵層122上，用以形成PN接面。但是，硫化鎘具有極高的污染性，很多國家不允許使用硫化鎘。因此，根據本發明之實施方式的太陽能電池，能夠廣泛地被應用。
本發明之另一特徵是硒化銅銦鎵層122接觸矽基材124而形成異質PN接面123。硒化銅銦鎵與矽所形成的異質PN接面，可使太陽能電池100具有較小的反向飽和電壓(reverse saturation current)以及更高的開路電壓(open-circuit voltage)。較小的反向飽和電壓可使太陽能電池的漏電損失降低。高的開路電壓可使太陽能電池具有較佳的光電轉換效率。
硒化銅銦鎵層122可為P型硒化銅銦鎵或N型硒化銅銦鎵。在硒化銅銦鎵層122為P型硒化銅銦鎵的實施方式中，矽基材124為N型矽基材124。矽基材124可包含一重摻雜區域126。重摻雜區域126位在矽基材124鄰近第一導電層110的表面附近。在此實施方式中，重摻雜區域126為N+重摻雜區域(N+ region)，用以提高太陽能電池100的內建電場。因此，重摻雜區域126亦可稱為表面電場層。在另一實施方式中，硒化銅銦鎵層122為N型硒化銅銦鎵，且矽基材124為P型矽基材124。在此實施方式中，重摻雜區域126為P+重摻雜區域，重摻雜區域126位在矽基材124鄰近第一導電層110的表面附近。
上述矽基材124可例如為單晶矽晶圖或成長於其他基板上之單晶矽、多晶矽或非晶矽。矽基材124的厚度可例如為約100至約500 μm。
在一實施方式中，硒化銅銦鎵層122在厚度方向上具有一鎵濃度分佈。例如，在硒化銅銦鎵層122接觸矽基材124的一側，硒化銅銦鎵層122中的鎵濃度較小。反之，在遠離矽基材124之另一側，硒化銅銦鎵層122中的鎵濃度較高，如第1A圖所示。本案發明人發現，雖然硒化銅銦鎵層122中的鎵濃度越高，可使開路電壓提高。不過，在某些實施方式中，卻可能同時導致太陽能電池100的溫度係數降低。換言之，會造成太陽能電池在高溫下的光電轉換效率大幅下降，而導致太陽能電池整體效率降低。因此，在本實施方式中，硒化銅銦鎵層122具有一鎵濃度分佈，以降低溫度對於太陽能電池效率的影響程度。從而，使太陽能電池不但在常溫下具有較高光電轉換效率，並且在高溫下維持這樣的效率。硒化銅銦鎵層122的鎵元素成分比例可例如為鎵元素/(鎵元素+銦元素)比例約0.2至0.9。
硒化銅銦鎵層122與矽基材124兩者都具有光電轉換的特性。因此，當光線穿透硒化銅銦鎵層122時，未被硒化銅銦鎵層122吸收的光線，可再被矽基材124吸收並被轉換成電能。因此，根據本發明之實施方式，具有極高的光電轉換效率。
可使用共蒸鍍、濺鍍、印刷或其他製造方法在矽基材124上形成硒化銅銦鎵層122。在一實施例中，硒化銅銦鎵層122的厚度H為約0.1 μm至約5μm，明確地為約0.1 μm至約2 μm，更明確地為約0.1 μm至約1 μm。因此，相較於習知技術，根據本發明之實施方式，可具有較小的硒化銅銦鎵層厚度。
第一導電層110及第二導電層130分別配置於光電轉換層120的兩側，用以傳輸光電轉換層120所產生的電能。具體而言，光電轉換層120位於第一導電層110上方，第二導電層130位於光電轉換層120上方。第一導電層110及第二導電層130可藉由各種物理氣象沈積技術來形成。
在第1A圖繪示的實施方式中，光線由第二導電層130的一側進入太陽能電池100。因此，第二導電層130為一透明導電層，其可例如為氧化銦錫、氧化鋅、氧化錫或氧化鋅鎂等材料所製成。第二導電層130的厚度可例如為約50至約100 nm。第一導電層110為一金屬層，其可例如為鋁或銀等金屬所製成。
硒化銅銦鎵層122可配置在矽基材124的上方或下方。在一實施例中，銦鎵層122位於第二導電層130與矽基材124之間，如第1A圖所示。在另一實施例中，如第1B圖所示，硒化銅銦鎵層122可位於第一導電層110與矽基材124之間。
在一實施方式中，太陽能電池100可更包括有一反射層140，如第1A圖所示。反射層140位於光電轉換層120的下方，用以反射未被吸收的光線，例如波長較長的光線。在一實例中，反射層140並非金屬材料所製成。例如，反射層140可為氧化銦錫、氧化銦鎢、或氧化鋅摻雜鋁或鎵等導電氧化物所製成。反射層140也可利用非導電材料來製造，例如氧化矽。在反射層140為非導電材料的實施方式中，反射層140可具有複數個接觸窗142，使第一導電層110能夠經由接觸窗142電性連接至光電轉換層120。
在又一實施方式中，太陽能電池100可更包括有一輔助電極150，如第1A圖所示。輔助電極150位於第二導電層130上，且為圖案化之電極。例如，輔助電極150可具有一矩陣形狀圖案(格線狀圖案)。輔助電極150可例如為鋁或銀等高導電率之金屬材料所製成。
在一實施方式中，太陽能電池100之矽基材124其與第一導電層110接觸之一側，更可利用佈植或是擴散的方式，使其具有更高濃度的重摻雜區域而形成背後電場(圖未示)，其中該背後電場位於矽基材124與第一導電層110之間。
第2圖繪示本發明一實施方式之太陽能電池100與習知技術之CIGS太陽能電池的電流密度與電壓的關係曲線圖。在第2圖中，曲線A表示習知技術之CIGS太陽能電池，曲線B表示本發明一實施方式之太陽能電池100。根據本發明實施方式之太陽能電池100的開路電壓以及電流密度明顯高於習知技術之CIGS太陽能電池。
第3圖繪示本發明三個不同實施例之太陽能電池100的電流密度與電壓的關係曲線圖。曲線C表示矽基材124中沒有重摻雜區域126的實施例。曲線D表示矽基材124中有重摻雜區域126的實施例。曲線E表示矽基材124中有重摻雜區域126，且硒化銅銦鎵層122具有一鎵濃度分佈的實施例。由第3圖可知，硒化銅銦鎵層具有鎵濃度分佈的實施例(曲線E)的開路電壓以及電流密度高於其他兩個實施例。
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100．．．太陽能電池
110．．．第一導電層
120．．．光電轉換層
122．．．硒化銅銦鎵層
123．．．接面
124．．．矽基材
126．．．重摻雜區域
130．．．第二導電層
140．．．反射層
142．．．接觸窗
150．．．輔助電極
H．．．厚度
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂，所附圖式之說明如下：
第1A圖繪示本發明一實施方式之太陽能電池的剖面示意圖。
第1B圖繪示本發明一實施方式之太陽能電池的剖面示意圖。
第2圖繪示本發明一實施方式之太陽能電池與習知技術之CIGS太陽能電池的電流密度與電壓的關係曲線圖。
第3圖繪示本發明三個實施例之太陽能電池的電流密度與電壓的關係曲線圖。
100．．．太陽能電池
110．．．第一導電層
120．．．光電轉換層
122．．．硒化銅銦鎵層
123．．．接面
124．．．矽基材
126．．．重摻雜區域
130．．．第二導電層
140．．．反射層
142．．．接觸窗
150．．．輔助電極
H．．．厚度
Claims (10)
- 一種太陽能電池，包括：一第一導電層；一光電轉換層，用以將一光線轉換為一電能，該光電轉換層位於該第一導電層上方，且該光電轉換層包含一硒化銅銦鎵層以及一矽基材，該硒化銅銦鎵層接觸該矽基材，使該硒化銅銦鎵層與該矽基材間形成一異質PN接面；以及一第二導電層，位於該光電轉換層上方，其中該第一及該第二導電層用以傳輸該電能。
- 如請求項1所述之太陽能電池，其中該第一導電層為一金屬層，該第二導電層為一透明導電層，且該硒化銅銦鎵層位於該透明導電層與該矽基材之間。
- 如請求項1所述之太陽能電池，其中該硒化銅銦鎵層包含P型硒化銅銦鎵，且該矽基材為N型矽基材。
- 如請求項3所述之太陽能電池，其中該矽基材包含一重摻雜區域N+區域，位於該矽基材之鄰近該第一導電層之一表面。
- 如請求項1所述之太陽能電池，其中該光電轉換層不包含硫化鎘。
- 如請求項1所述之太陽能電池，其中該硒化銅銦鎵層包含N型硒化銅銦鎵，且該矽基材為P型矽基材。
- 如請求項6所述之太陽能電池，其中該矽基材包含一重摻雜區域P+區域，位於該矽基材之鄰近該第一導電層之一表面。
- 如請求項1所述之太陽能電池，其中該硒化銅銦鎵層具有一鎵濃度分佈，且該硒化銅銦鎵層接觸該矽基材之一側的鎵濃度小於遠離該矽基材之另一側的鎵濃度。
- 如請求項1所述之太陽能電池，其中該硒化銅銦鎵層之一厚度為約0.1 μm至約5μm。
- 如請求項1所述之太陽能電池，其中該第一導電層為一金屬層，該第二導電層為一透明導電層，且該硒化銅銦鎵層位於該金屬層與該矽基材之間。
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100148322A TW201327855A (zh) | 2011-12-23 | 2011-12-23 | 太陽能電池 |
| CN201210063143.8A CN102593230B (zh) | 2011-12-23 | 2012-03-08 | 太阳能电池 |
| US13/463,217 US20130160853A1 (en) | 2011-12-23 | 2012-05-03 | Solar cell having a pn hetero-junction |
| EP12173319.0A EP2608273A3 (en) | 2011-12-23 | 2012-06-23 | Solar cell having a pn hetero-junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100148322A TW201327855A (zh) | 2011-12-23 | 2011-12-23 | 太陽能電池 |
Publications (1)
| Publication Number | Publication Date |
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| TW201327855A true TW201327855A (zh) | 2013-07-01 |
Family
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| Application Number | Title | Priority Date | Filing Date |
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| TW100148322A TW201327855A (zh) | 2011-12-23 | 2011-12-23 | 太陽能電池 |
Country Status (4)
| Country | Link |
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| US (1) | US20130160853A1 (zh) |
| EP (1) | EP2608273A3 (zh) |
| CN (1) | CN102593230B (zh) |
| TW (1) | TW201327855A (zh) |
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| KR101667180B1 (ko) * | 2016-01-13 | 2016-10-17 | 한국과학기술원 | 신개념 패시베이션 구조를 이용하는 칼코지나이드 기반 태양 전지 및 그 제작 방법 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3249407B2 (ja) * | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池 |
| US7906723B2 (en) * | 2008-04-30 | 2011-03-15 | General Electric Company | Compositionally-graded and structurally-graded photovoltaic devices and methods of fabricating such devices |
| US20080190483A1 (en) * | 2007-02-13 | 2008-08-14 | Carpenter R Douglas | Composition and method of preparing nanoscale thin film photovoltaic materials |
| US7898723B2 (en) * | 2008-04-02 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical systems display element with photovoltaic structure |
| US7919710B2 (en) * | 2008-04-30 | 2011-04-05 | Nexpower Technology Corp. | Solar cell containing silicon and chalcopyrite semiconductor layers |
| KR101010286B1 (ko) * | 2008-08-29 | 2011-01-24 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
| CN101707219B (zh) * | 2009-08-27 | 2011-06-22 | 南安市三晶阳光电力有限公司 | 本征隔离结构太阳能电池及其制造方法 |
| TWI402992B (zh) * | 2009-10-23 | 2013-07-21 | Ind Tech Res Inst | 太陽能電池及其製造方法 |
| US20110108115A1 (en) * | 2009-11-11 | 2011-05-12 | International Business Machines Corporation | Forming a Photovoltaic Device |
| US20120031477A1 (en) * | 2010-08-04 | 2012-02-09 | Egypt Nanotechnology Center | Photovoltaic devices with an interfacial band-gap modifying structure and methods for forming the same |
-
2011
- 2011-12-23 TW TW100148322A patent/TW201327855A/zh unknown
-
2012
- 2012-03-08 CN CN201210063143.8A patent/CN102593230B/zh not_active Expired - Fee Related
- 2012-05-03 US US13/463,217 patent/US20130160853A1/en not_active Abandoned
- 2012-06-23 EP EP12173319.0A patent/EP2608273A3/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| CN102593230A (zh) | 2012-07-18 |
| CN102593230B (zh) | 2014-06-11 |
| US20130160853A1 (en) | 2013-06-27 |
| EP2608273A2 (en) | 2013-06-26 |
| EP2608273A3 (en) | 2014-07-16 |
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