JP7206559B2 - オプトエレクトロニクス箔およびオプトエレクトロニクス箔の製造方法 - Google Patents

オプトエレクトロニクス箔およびオプトエレクトロニクス箔の製造方法 Download PDF

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JP7206559B2
JP7206559B2 JP2019539927A JP2019539927A JP7206559B2 JP 7206559 B2 JP7206559 B2 JP 7206559B2 JP 2019539927 A JP2019539927 A JP 2019539927A JP 2019539927 A JP2019539927 A JP 2019539927A JP 7206559 B2 JP7206559 B2 JP 7206559B2
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oxide
layer
optoelectronic
foil
layers
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JP2020505736A (ja
JP2020505736A5 (OSRAM
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ウォジェハウスキー、コンラッド
マリンキエウィクツ、オルガ
ブルサ、ボルトシュ
ルイズ、フアン パブロ プリエト
ウィルク、バーバラ
カプクズナス、アーター
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サウル エス．エー．
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80517—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Laminated Bodies (AREA)
  • Electroluminescent Light Sources (AREA)
JP2019539927A 2017-01-25 2018-01-24 オプトエレクトロニクス箔およびオプトエレクトロニクス箔の製造方法 Active JP7206559B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PL420300A PL233211B1 (pl) 2017-01-25 2017-01-25 Folia optoelektroniczna oraz sposób wytwarzania folii optoelektronicznej
PLP.420300 2017-01-25
PCT/PL2018/000008 WO2018139945A1 (en) 2017-01-25 2018-01-24 Optoelectronic foil and manufacturing method of optoelectronic foil

Publications (3)

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JP2020505736A JP2020505736A (ja) 2020-02-20
JP2020505736A5 JP2020505736A5 (OSRAM) 2021-03-04
JP7206559B2 true JP7206559B2 (ja) 2023-01-18

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US (1) US20190348621A1 (OSRAM)
EP (1) EP3574528B1 (OSRAM)
JP (1) JP7206559B2 (OSRAM)
CN (1) CN110291647B (OSRAM)
ES (1) ES2975275T3 (OSRAM)
FI (1) FI3574528T3 (OSRAM)
PL (1) PL233211B1 (OSRAM)
WO (1) WO2018139945A1 (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL425218A1 (pl) * 2018-04-13 2019-10-21 Centrum Badań I Rozwoju Technologii Dla Przemysłu Spółka Akcyjna Krzemowe ogniwo fotowoltaiczne i sposób wytwarzania krzemowych ogniw fotowoltaicznych
CN109979977A (zh) * 2019-03-28 2019-07-05 武汉华星光电半导体显示技术有限公司 Oled显示面板及其制备方法
WO2021157373A1 (ja) * 2020-02-04 2021-08-12 三井金属鉱業株式会社 キャリア付金属箔
CN111638610A (zh) * 2020-07-20 2020-09-08 宁波材料所杭州湾研究院 一种兼具可见光高透过和隔热的柔性智能调光膜及其制备方法
JP7230131B2 (ja) * 2020-09-04 2023-02-28 デクセリアルズ株式会社 導電性積層体及びこれを用いた光学装置、導電性積層体の製造方法
US20230282387A1 (en) * 2020-09-04 2023-09-07 Dexerials Corporation Conductive layered product, optical device using same, and manufacturing method for conductive layered product
EP4064378B1 (en) 2021-03-23 2024-03-06 Saule S.A. A light-transmissive multilayer structure for optoelectronic devices
US11545453B2 (en) * 2021-04-19 2023-01-03 Nanya Technology Corporation Semiconductor device with barrier layer and method for fabricating the same
EP4145547A1 (en) * 2021-09-03 2023-03-08 Saule S.A. Perovskite solar cell
EP4683469A1 (en) * 2024-07-15 2026-01-21 Saule S.A. A method for manufacturing an optoelectronic foil, an optoelectronic foil and an optoelectronic device comprising the optoelectronic foil

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001243840A (ja) 2000-02-29 2001-09-07 Mitsui Chemicals Inc 透明電極
JP2005310745A (ja) 2004-03-23 2005-11-04 Toyota Central Res & Dev Lab Inc 電極
JP2014516455A (ja) 2011-04-08 2014-07-10 サン−ゴバン グラス フランス 多層電子デバイス
JP2015099804A (ja) 2015-03-03 2015-05-28 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子および照明装置
JP2016103443A (ja) 2014-11-28 2016-06-02 パイオニア株式会社 発光装置
CN106158901A (zh) 2015-03-24 2016-11-23 上海和辉光电有限公司 一种混合型薄膜及其制备方法、以及柔性oled显示器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0733931B1 (en) * 1995-03-22 2003-08-27 Toppan Printing Co., Ltd. Multilayered conductive film, and transparent electrode substrate and liquid crystal device using the same
JPH1024520A (ja) * 1996-07-11 1998-01-27 Mitsui Petrochem Ind Ltd 透明導電性積層体
US6379509B2 (en) * 1998-01-20 2002-04-30 3M Innovative Properties Company Process for forming electrodes
CA2319382C (en) * 1998-11-30 2010-08-10 Teijin Limited Liquid crystal display component and transparent conductive substrate suitable for the same
US20040229051A1 (en) * 2003-05-15 2004-11-18 General Electric Company Multilayer coating package on flexible substrates for electro-optical devices
US8252624B2 (en) * 2010-01-18 2012-08-28 Applied Materials, Inc. Method of manufacturing thin film solar cells having a high conversion efficiency
JP5077407B2 (ja) * 2010-09-03 2012-11-21 大日本印刷株式会社 太陽電池および太陽電池モジュール
WO2012169845A2 (ko) * 2011-06-10 2012-12-13 주식회사 포스코 태양전지 기판과 그 제조방법 및 이를 이용한 태양전지
US9018715B2 (en) * 2012-11-30 2015-04-28 Silicon Laboratories Inc. Gas-diffusion barriers for MEMS encapsulation
TWI495404B (zh) * 2013-06-21 2015-08-01 Chi Mei Corp 軟性基板用組成物及軟性基板
KR101642589B1 (ko) * 2013-09-30 2016-07-29 주식회사 엘지화학 유기전자소자용 기판 및 이의 제조방법
EP2871681A1 (en) * 2013-11-07 2015-05-13 Saint-Gobain Glass France Back contact substrate for a photovoltaic cell or module
US10573856B2 (en) * 2015-05-14 2020-02-25 GM Global Technology Operations LLC Barrier layer coatings for battery pouch cell seal
KR102070833B1 (ko) * 2015-05-26 2020-04-01 도레이 카부시키가이샤 피로메텐 붕소 착체, 색 변환 조성물, 색 변환 필름, 및 그것을 포함하는 광원 유닛, 디스플레이 및 조명

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001243840A (ja) 2000-02-29 2001-09-07 Mitsui Chemicals Inc 透明電極
JP2005310745A (ja) 2004-03-23 2005-11-04 Toyota Central Res & Dev Lab Inc 電極
JP2014516455A (ja) 2011-04-08 2014-07-10 サン−ゴバン グラス フランス 多層電子デバイス
JP2016103443A (ja) 2014-11-28 2016-06-02 パイオニア株式会社 発光装置
JP2015099804A (ja) 2015-03-03 2015-05-28 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子および照明装置
CN106158901A (zh) 2015-03-24 2016-11-23 上海和辉光电有限公司 一种混合型薄膜及其制备方法、以及柔性oled显示器

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EP3574528A1 (en) 2019-12-04
ES2975275T3 (es) 2024-07-04
CN110291647B (zh) 2024-03-26
FI3574528T3 (fi) 2024-04-23
PL233211B1 (pl) 2019-09-30
WO2018139945A1 (en) 2018-08-02
EP3574528B1 (en) 2024-03-13
CN110291647A (zh) 2019-09-27
US20190348621A1 (en) 2019-11-14
PL420300A1 (pl) 2018-07-30
JP2020505736A (ja) 2020-02-20

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