JP7201595B2 - スパッタリングターゲット、酸化物半導体膜の成膜方法、およびバッキングプレート - Google Patents

スパッタリングターゲット、酸化物半導体膜の成膜方法、およびバッキングプレート Download PDF

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JP7201595B2
JP7201595B2 JP2019534557A JP2019534557A JP7201595B2 JP 7201595 B2 JP7201595 B2 JP 7201595B2 JP 2019534557 A JP2019534557 A JP 2019534557A JP 2019534557 A JP2019534557 A JP 2019534557A JP 7201595 B2 JP7201595 B2 JP 7201595B2
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sputtering target
sintered body
oxide sintered
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JPWO2019026955A1 (ja
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暁 海上
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Idemitsu Kosan Co Ltd
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Idemitsu Kosan Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2019534557A 2017-08-01 2018-08-01 スパッタリングターゲット、酸化物半導体膜の成膜方法、およびバッキングプレート Active JP7201595B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017149399 2017-08-01
JP2017149399 2017-08-01
PCT/JP2018/028843 WO2019026955A1 (ja) 2017-08-01 2018-08-01 スパッタリングターゲット、酸化物半導体膜の成膜方法、およびバッキングプレート

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JPWO2019026955A1 JPWO2019026955A1 (ja) 2020-09-10
JP7201595B2 true JP7201595B2 (ja) 2023-01-10

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JP2019534557A Active JP7201595B2 (ja) 2017-08-01 2018-08-01 スパッタリングターゲット、酸化物半導体膜の成膜方法、およびバッキングプレート

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JP (1) JP7201595B2 (ko)
KR (1) KR102535445B1 (ko)
CN (1) CN110892089B (ko)
TW (1) TWI803501B (ko)
WO (1) WO2019026955A1 (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002173766A (ja) 2000-12-01 2002-06-21 Toshiba Corp スパッタリングターゲットおよびそれを具備するスパッタリング装置
JP2004083985A (ja) 2002-08-26 2004-03-18 Mitsui Mining & Smelting Co Ltd スパッタリングターゲットおよびその製造方法
JP2007505217A (ja) 2003-09-09 2007-03-08 プラックセアー エス．ティ．テクノロジー、 インコーポレイテッド 長寿命スパッタ用ターゲット
WO2009069658A1 (ja) 2007-11-28 2009-06-04 Mitsui Mining & Smelting Co., Ltd. スパッタリングターゲット材およびこれから得られるスパッタリングターゲット

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01290764A (ja) 1988-05-16 1989-11-22 Tosoh Corp 透明導電膜用スパッタリングターゲット
JPH03287763A (ja) 1990-04-04 1991-12-18 Sumitomo Metal Ind Ltd マグネトロン・スパッタリング用ターゲット
JPH05287522A (ja) 1992-04-10 1993-11-02 Asahi Glass Co Ltd セラミックス製スパッタターゲット
JPH06172991A (ja) 1992-11-30 1994-06-21 Mitsui Mining & Smelting Co Ltd マグネトロンスパッタリング用セラミックスターゲット
TW381123B (en) * 1997-02-28 2000-02-01 Tosoh Corp A process for surface-treating a sputtering target
JP4081840B2 (ja) * 1997-02-28 2008-04-30 東ソー株式会社 スパッタリングターゲットの製造方法
JP3760652B2 (ja) 1999-01-08 2006-03-29 東ソー株式会社 多分割スパッタリングターゲット
CN100537822C (zh) * 2006-07-31 2009-09-09 北京有色金属研究总院 金属基带上连续生长的多层立方织构隔离层的制备方法
JP2008038229A (ja) 2006-08-09 2008-02-21 Mitsui Mining & Smelting Co Ltd スパッタリング方法およびそれに用いられるスパッタリングターゲット
JP5651095B2 (ja) 2010-11-16 2015-01-07 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット
JP5750063B2 (ja) * 2011-02-10 2015-07-15 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット
KR102142845B1 (ko) 2012-05-31 2020-08-10 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟
JP6731147B2 (ja) 2015-08-10 2020-07-29 日立金属株式会社 酸化物スパッタリングターゲット材

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002173766A (ja) 2000-12-01 2002-06-21 Toshiba Corp スパッタリングターゲットおよびそれを具備するスパッタリング装置
JP2004083985A (ja) 2002-08-26 2004-03-18 Mitsui Mining & Smelting Co Ltd スパッタリングターゲットおよびその製造方法
JP2007505217A (ja) 2003-09-09 2007-03-08 プラックセアー エス．ティ．テクノロジー、 インコーポレイテッド 長寿命スパッタ用ターゲット
WO2009069658A1 (ja) 2007-11-28 2009-06-04 Mitsui Mining & Smelting Co., Ltd. スパッタリングターゲット材およびこれから得られるスパッタリングターゲット

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KR102535445B1 (ko) 2023-05-22
CN110892089A (zh) 2020-03-17
WO2019026955A1 (ja) 2019-02-07
JPWO2019026955A1 (ja) 2020-09-10
CN110892089B (zh) 2022-05-24
KR20200037209A (ko) 2020-04-08
TWI803501B (zh) 2023-06-01
TW201917109A (zh) 2019-05-01

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