JP7195311B2 - フラッシュメモリデバイスのためのハッキング防止メカニズム - Google Patents
フラッシュメモリデバイスのためのハッキング防止メカニズム Download PDFInfo
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- JP7195311B2 JP7195311B2 JP2020520547A JP2020520547A JP7195311B2 JP 7195311 B2 JP7195311 B2 JP 7195311B2 JP 2020520547 A JP2020520547 A JP 2020520547A JP 2020520547 A JP2020520547 A JP 2020520547A JP 7195311 B2 JP7195311 B2 JP 7195311B2
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- 230000007246 mechanism Effects 0.000 title description 8
- 230000006870 function Effects 0.000 claims description 10
- 230000003213 activating effect Effects 0.000 claims 2
- 238000003491 array Methods 0.000 description 38
- 238000001514 detection method Methods 0.000 description 37
- 238000012360 testing method Methods 0.000 description 25
- 238000007667 floating Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 19
- 230000008878 coupling Effects 0.000 description 15
- 238000010168 coupling process Methods 0.000 description 15
- 238000005859 coupling reaction Methods 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012544 monitoring process Methods 0.000 description 6
- 230000001052 transient effect Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 101001101476 Bacillus subtilis (strain 168) 50S ribosomal protein L21 Proteins 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/062—Securing storage systems
- G06F3/0622—Securing storage systems in relation to access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
- G06F11/0706—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment
- G06F11/073—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment in a memory management context, e.g. virtual memory or cache management
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
- G06F11/0751—Error or fault detection not based on redundancy
- G06F11/0754—Error or fault detection not based on redundancy by exceeding limits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
- G06F11/0793—Remedial or corrective actions
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
- G06F21/70—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
- G06F21/78—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data
- G06F21/79—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data in semiconductor storage media, e.g. directly-addressable memories
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0629—Configuration or reconfiguration of storage systems
- G06F3/0637—Permissions
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09C—CIPHERING OR DECIPHERING APPARATUS FOR CRYPTOGRAPHIC OR OTHER PURPOSES INVOLVING THE NEED FOR SECRECY
- G09C1/00—Apparatus or methods whereby a given sequence of signs, e.g. an intelligible text, is transformed into an unintelligible sequence of signs by transposing the signs or groups of signs or by replacing them by others according to a predetermined system
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3422—Circuits or methods to evaluate read or write disturbance in nonvolatile memory, without steps to mitigate the problem
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/025—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L9/00—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
- H04L9/32—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols including means for verifying the identity or authority of a user of the system or for message authentication, e.g. authorization, entity authentication, data integrity or data verification, non-repudiation, key authentication or verification of credentials
- H04L9/3271—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols including means for verifying the identity or authority of a user of the system or for message authentication, e.g. authorization, entity authentication, data integrity or data verification, non-repudiation, key authentication or verification of credentials using challenge-response
- H04L9/3278—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols including means for verifying the identity or authority of a user of the system or for message authentication, e.g. authorization, entity authentication, data integrity or data verification, non-repudiation, key authentication or verification of credentials using challenge-response using physically unclonable functions [PUF]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0403—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals during or with feedback to manufacture
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C2029/1202—Word line control
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C2029/1206—Location of test circuitry on chip or wafer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C2029/4402—Internal storage of test result, quality data, chip identification, repair information
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/57—Protection from inspection, reverse engineering or tampering
- H01L23/576—Protection from inspection, reverse engineering or tampering using active circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y04—INFORMATION OR COMMUNICATION TECHNOLOGIES HAVING AN IMPACT ON OTHER TECHNOLOGY AREAS
- Y04S—SYSTEMS INTEGRATING TECHNOLOGIES RELATED TO POWER NETWORK OPERATION, COMMUNICATION OR INFORMATION TECHNOLOGIES FOR IMPROVING THE ELECTRICAL POWER GENERATION, TRANSMISSION, DISTRIBUTION, MANAGEMENT OR USAGE, i.e. SMART GRIDS
- Y04S40/00—Systems for electrical power generation, transmission, distribution or end-user application management characterised by the use of communication or information technologies, or communication or information technology specific aspects supporting them
- Y04S40/20—Information technology specific aspects, e.g. CAD, simulation, modelling, system security
Description
セキュリティを強化し、フラッシュメモリデバイスのハッキングを防止するための多数のメカニズムが開示されている。
表1:読み出し、消去及びプログラム用の正電圧を使用したフラッシュメモリセル10の動作
表2:読み出し及び/又はプログラム用の負電圧を使用したフラッシュメモリセル
10の動作
表3:消去用の負電圧を使用したフラッシュメモリセル10の動作
Claims (2)
- 第1の複数のフラッシュメモリセル及び第2の複数のフラッシュメモリセルを含むアレイと、
アドレスを受信するためのデコード回路であって、前記アドレスが前記第1の複数のフラッシュメモリセルに対応する場合に、前記デコード回路は、読み出し又はプログラム動作のために、前記アドレスに対応する行及び列をアクティブ化し、前記アドレスが前記第2の複数のフラッシュメモリセルに対応する場合に、前記デコード回路は、前記アドレスにスクランブル機能を実施して、スクランブルされたアドレスを生成し、読み出し又はプログラム動作のために、前記スクランブルされたアドレスに対応する行及び列をアクティブ化する、デコード回路と、を備え、
前記スクランブル機能は、(i)前記アレイ内の複数のセル内の漏洩電流、及び、(ii)前記アレイ内の複数のセルの固定されたプログラム又は消去電圧から生じる電流、のうちの1つから生成されたランダム番号を利用する、フラッシュメモリシステム。 - 前記第1の複数のフラッシュメモリセル及び前記第2の複数のフラッシュメモリセルは、スプリットゲートフラッシュメモリセルである、請求項1に記載のフラッシュメモリシステム。
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JP2022198063A JP7476291B2 (ja) | 2017-10-13 | 2022-12-12 | フラッシュメモリデバイスのためのハッキング防止メカニズム |
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US15/784,025 US10534554B2 (en) | 2017-10-13 | 2017-10-13 | Anti-hacking mechanisms for flash memory device |
US15/784,025 | 2017-10-13 | ||
PCT/US2018/052325 WO2019074652A1 (en) | 2017-10-13 | 2018-09-22 | ANTI-PIRACY MECHANISMS FOR FLASH MEMORY |
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Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10534554B2 (en) * | 2017-10-13 | 2020-01-14 | Silicon Storage Technology, Inc. | Anti-hacking mechanisms for flash memory device |
US10483971B1 (en) * | 2018-05-16 | 2019-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Physical unclonable device and method of maximizing existing process variation for a physically unclonable device |
JP6646103B2 (ja) * | 2018-05-30 | 2020-02-14 | ウィンボンド エレクトロニクス コーポレーション | 半導体装置 |
US10770146B2 (en) * | 2018-06-08 | 2020-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for PUF generator characterization |
US10958453B2 (en) * | 2018-07-03 | 2021-03-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for noise injection for PUF generator characterization |
US11430748B2 (en) * | 2019-01-04 | 2022-08-30 | International Business Machines Corporation | Inspection and identification to enable secure chip processing |
US11416416B2 (en) * | 2019-01-13 | 2022-08-16 | Ememory Technology Inc. | Random code generator with non-volatile memory |
US20200350263A1 (en) * | 2019-04-30 | 2020-11-05 | Nxp B.V. | Semiconductor devices with security features |
US20200350220A1 (en) * | 2019-04-30 | 2020-11-05 | Nxp B.V. | Semiconductor device with security features |
EP3839750A1 (en) * | 2019-12-18 | 2021-06-23 | Thales Dis France Sa | Method for secure executing of a security related process |
FR3108782A1 (fr) * | 2020-03-25 | 2021-10-01 | Stmicroelectronics (Rousset) Sas | Dispositif de fonction physiquement non clonable |
KR20210129370A (ko) | 2020-04-20 | 2021-10-28 | 삼성전자주식회사 | 메모리 모듈 및 적층형 메모리 장치 |
KR20210145341A (ko) | 2020-05-25 | 2021-12-02 | 삼성전자주식회사 | 비휘발성 메모리 장치에서의 데이터 암호화 방법, 비휘발성 메모리 장치 및 사용자 장치 |
JP7475989B2 (ja) | 2020-06-26 | 2024-04-30 | キオクシア株式会社 | メモリシステムおよび制御方法 |
KR20220028694A (ko) * | 2020-08-31 | 2022-03-08 | 삼성전자주식회사 | 멀티 레벨 신호 수신기 및 이를 포함하는 메모리 시스템 |
TWI789248B (zh) * | 2022-02-21 | 2023-01-01 | 台旺科技股份有限公司 | 產生用於一電子元件的一隨機碼的裝置及方法 |
US20240037285A1 (en) | 2022-07-31 | 2024-02-01 | Winbond Electronics Corporation | Flash Programming Randomization |
CN115130152B (zh) * | 2022-09-01 | 2022-11-18 | 北京紫光青藤微系统有限公司 | 一种物理不可克隆函数的生成方法及装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003298569A (ja) | 2002-01-29 | 2003-10-17 | Matsushita Electric Ind Co Ltd | アドレス暗号化装置、アドレス暗号化方法及びアドレス暗号化プログラム |
JP2006509287A (ja) | 2002-12-04 | 2006-03-16 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | データ処理装置、特に電子メモリ構成要素、およびそれに関連する暗号化方法 |
JP2015026408A (ja) | 2013-07-25 | 2015-02-05 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US20170147509A1 (en) | 2015-11-20 | 2017-05-25 | Arm Limited | Dynamic Memory Scrambling |
Family Cites Families (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5655113A (en) * | 1994-07-05 | 1997-08-05 | Monolithic System Technology, Inc. | Resynchronization circuit for a memory system and method of operating same |
US5729493A (en) * | 1996-08-23 | 1998-03-17 | Motorola Inc. | Memory suitable for operation at low power supply voltages and sense amplifier therefor |
US5943283A (en) * | 1997-12-05 | 1999-08-24 | Invox Technology | Address scrambling in a semiconductor memory |
US5943287A (en) * | 1998-03-31 | 1999-08-24 | Emc Corporation | Fault tolerant memory system |
US7873837B1 (en) * | 2000-01-06 | 2011-01-18 | Super Talent Electronics, Inc. | Data security for electronic data flash card |
US6792528B1 (en) * | 2000-05-17 | 2004-09-14 | Chien-Tzu Hou | Method and apparatus for securing data contents of a non-volatile memory device |
US6645813B1 (en) * | 2002-01-16 | 2003-11-11 | Taiwan Semiconductor Manufacturing Company | Flash EEPROM with function bit by bit erasing |
JP3595540B2 (ja) * | 2002-01-29 | 2004-12-02 | 株式会社関西総合環境センター | 育苗用の開放型空調装置 |
US7038947B2 (en) * | 2002-12-19 | 2006-05-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Two-transistor flash cell for large endurance application |
US7019998B2 (en) * | 2003-09-09 | 2006-03-28 | Silicon Storage Technology, Inc. | Unified multilevel cell memory |
US8060670B2 (en) * | 2004-03-17 | 2011-11-15 | Super Talent Electronics, Inc. | Method and systems for storing and accessing data in USB attached-SCSI (UAS) and bulk-only-transfer (BOT) based flash-memory device |
US7268577B2 (en) * | 2004-12-17 | 2007-09-11 | International Business Machines Corporation | Changing chip function based on fuse states |
US7327600B2 (en) * | 2004-12-23 | 2008-02-05 | Unity Semiconductor Corporation | Storage controller for multiple configurations of vertical memory |
JP2007193913A (ja) | 2006-01-20 | 2007-08-02 | Toshiba Microelectronics Corp | 不揮発性半導体記憶装置 |
US7921270B2 (en) * | 2006-10-05 | 2011-04-05 | Sandisk Il Ltd. | Methods and systems for controlling access to a storage device |
US7563694B2 (en) * | 2006-12-01 | 2009-07-21 | Atmel Corporation | Scribe based bond pads for integrated circuits |
KR100813627B1 (ko) | 2007-01-04 | 2008-03-14 | 삼성전자주식회사 | 멀티-비트 데이터를 저장할 수 있는 플래시 메모리 장치를제어하는 메모리 제어기와 그것을 포함한 메모리 시스템 |
US7661006B2 (en) * | 2007-01-09 | 2010-02-09 | International Business Machines Corporation | Method and apparatus for self-healing symmetric multi-processor system interconnects |
US8181042B2 (en) * | 2007-02-12 | 2012-05-15 | Atmel Corporation | Low power mode data preservation in secure ICs |
US20090039410A1 (en) | 2007-08-06 | 2009-02-12 | Xian Liu | Split Gate Non-Volatile Flash Memory Cell Having A Floating Gate, Control Gate, Select Gate And An Erase Gate With An Overhang Over The Floating Gate, Array And Method Of Manufacturing |
JP5029205B2 (ja) * | 2007-08-10 | 2012-09-19 | 富士通セミコンダクター株式会社 | 半導体メモリ、半導体メモリのテスト方法およびシステム |
US20090109772A1 (en) * | 2007-10-24 | 2009-04-30 | Esin Terzioglu | Ram with independent local clock |
US20090113155A1 (en) * | 2007-10-31 | 2009-04-30 | Echostar Technologies Corporation | Hardware anti-piracy via nonvolatile memory devices |
US8145855B2 (en) * | 2008-09-12 | 2012-03-27 | Sandisk Technologies Inc. | Built in on-chip data scrambler for non-volatile memory |
JP5599559B2 (ja) | 2008-11-27 | 2014-10-01 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置及びそのリフレッシュ方法 |
US8379466B2 (en) * | 2009-03-31 | 2013-02-19 | Freescale Semiconductor, Inc. | Integrated circuit having an embedded memory and method for testing the memory |
FR2948795A1 (fr) * | 2009-07-30 | 2011-02-04 | St Microelectronics Rousset | Detecteur d'injection de fautes dans un circuit integre |
US8724387B2 (en) | 2009-10-22 | 2014-05-13 | Densbits Technologies Ltd. | Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages |
KR101728067B1 (ko) * | 2010-09-03 | 2017-04-18 | 삼성전자 주식회사 | 반도체 메모리 장치 |
DE112010005842T8 (de) * | 2010-10-05 | 2014-07-17 | Hewlett-Packard Development Company, L.P. | Verwürfeln einer Adresse und Verschlüsseln von Schreibdaten zum Speichern in einer Speichervorrichtung |
US8385140B2 (en) * | 2010-11-18 | 2013-02-26 | Advanced Micro Devices, Inc. | Memory elements having shared selection signals |
US8553481B2 (en) * | 2010-11-29 | 2013-10-08 | Apple Inc. | Sense amplifier latch with integrated test data multiplexer |
US8402349B2 (en) * | 2010-12-06 | 2013-03-19 | Apple Inc. | Two dimensional data randomization for a memory |
US8386990B1 (en) * | 2010-12-07 | 2013-02-26 | Xilinx, Inc. | Unique identifier derived from an intrinsic characteristic of an integrated circuit |
JP5813380B2 (ja) * | 2011-06-03 | 2015-11-17 | 株式会社東芝 | 半導体記憶装置 |
US8524577B2 (en) * | 2011-10-06 | 2013-09-03 | Stats Chippac, Ltd. | Semiconductor device and method of forming reconstituted wafer with larger carrier to achieve more eWLB packages per wafer with encapsulant deposited under temperature and pressure |
KR20130053247A (ko) * | 2011-11-15 | 2013-05-23 | 삼성전자주식회사 | 불휘발성 메모리 장치에 데이터를 프로그램하는 프로그램 방법 및 불휘발성 메모리 장치를 포함하는 메모리 시스템 |
KR101944936B1 (ko) * | 2012-01-12 | 2019-02-07 | 에스케이하이닉스 주식회사 | 페일 어드레스 저장회로, 리던던시 제어회로, 페일 어드레스 저장방법 및 리던던시 제어방법 |
KR20140070303A (ko) * | 2012-11-29 | 2014-06-10 | 삼성전자주식회사 | 인접 로우 어드레스 생성 기능을 갖는 반도체 메모리 장치 |
US9472284B2 (en) * | 2012-11-19 | 2016-10-18 | Silicon Storage Technology, Inc. | Three-dimensional flash memory system |
US9099864B2 (en) * | 2013-01-25 | 2015-08-04 | Apple Inc. | Electronic device with connector fault protection circuitry |
KR102133573B1 (ko) | 2013-02-26 | 2020-07-21 | 삼성전자주식회사 | 반도체 메모리 및 반도체 메모리를 포함하는 메모리 시스템 |
US9104588B2 (en) * | 2013-03-01 | 2015-08-11 | Micron Technology, Inc. | Circuits, apparatuses, and methods for address scrambling |
US9519546B2 (en) | 2014-03-17 | 2016-12-13 | Dell Products L.P. | Striping cache blocks with logical block address scrambling |
US9431083B2 (en) * | 2014-03-25 | 2016-08-30 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and storage device having the same |
EP3131032B1 (en) * | 2014-04-09 | 2021-09-22 | ICTK Holdings Co., Ltd. | Authentication apparatus and method |
US20150310933A1 (en) | 2014-04-25 | 2015-10-29 | Lattice Semiconductor Corporation | Configurable Test Address And Data Generation For Multimode Memory Built-In Self-Testing |
CN105609131A (zh) * | 2014-07-22 | 2016-05-25 | 硅存储技术公司 | 抑制擦除分裂栅闪存存储器单元扇区的部分的系统和方法 |
KR101575810B1 (ko) * | 2014-09-30 | 2015-12-08 | 고려대학교 산학협력단 | 물리적 복제 방지 기능을 갖는 플래시 메모리 장치 및 그 구현 방법 |
KR102282971B1 (ko) * | 2014-12-05 | 2021-07-29 | 삼성전자주식회사 | 반도체 메모리 장치, 및 상기 반도체 메모리 장치를 포함하는 메모리 시스템 |
JP5940705B1 (ja) * | 2015-03-27 | 2016-06-29 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
US9672930B2 (en) | 2015-05-29 | 2017-06-06 | Silicon Storage Technology, Inc. | Low power operation for flash memory system |
KR102356072B1 (ko) * | 2015-09-10 | 2022-01-27 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 그 동작 방법 |
US9972395B2 (en) * | 2015-10-05 | 2018-05-15 | Silicon Storage Technology, Inc. | Row and column decoders comprising fully depleted silicon-on-insulator transistors for use in flash memory systems |
CN106610885A (zh) * | 2015-10-21 | 2017-05-03 | 鸿富锦精密电子(天津)有限公司 | 服务器故障检测系统及方法 |
FR3045184B1 (fr) * | 2015-12-15 | 2018-07-20 | Idemia France | Procede d’ecriture dans une memoire non-volatile d’une entite electronique et entite electronique associee |
US9613692B1 (en) * | 2015-12-16 | 2017-04-04 | Stmicroelectronics International N.V. | Sense amplifier for non-volatile memory devices and related methods |
WO2017131671A1 (en) * | 2016-01-27 | 2017-08-03 | Hewlett Packard Enterprise Development Lp | Securing a memory device |
US10049717B2 (en) * | 2016-03-03 | 2018-08-14 | Samsung Electronics Co., Ltd. | Wear leveling for storage or memory device |
US10373665B2 (en) | 2016-03-10 | 2019-08-06 | Micron Technology, Inc. | Parallel access techniques within memory sections through section independence |
US10097348B2 (en) * | 2016-03-24 | 2018-10-09 | Samsung Electronics Co., Ltd. | Device bound encrypted data |
US10431265B2 (en) * | 2017-03-23 | 2019-10-01 | Silicon Storage Technology, Inc. | Address fault detection in a flash memory system |
US10534554B2 (en) * | 2017-10-13 | 2020-01-14 | Silicon Storage Technology, Inc. | Anti-hacking mechanisms for flash memory device |
US11443820B2 (en) * | 2018-01-23 | 2022-09-13 | Microchip Technology Incorporated | Memory device, memory address decoder, system, and related method for memory attack detection |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003298569A (ja) | 2002-01-29 | 2003-10-17 | Matsushita Electric Ind Co Ltd | アドレス暗号化装置、アドレス暗号化方法及びアドレス暗号化プログラム |
JP2006509287A (ja) | 2002-12-04 | 2006-03-16 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | データ処理装置、特に電子メモリ構成要素、およびそれに関連する暗号化方法 |
JP2015026408A (ja) | 2013-07-25 | 2015-02-05 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US20170147509A1 (en) | 2015-11-20 | 2017-05-25 | Arm Limited | Dynamic Memory Scrambling |
Also Published As
Publication number | Publication date |
---|---|
CN117012252A (zh) | 2023-11-07 |
EP4134859A1 (en) | 2023-02-15 |
TWI744852B (zh) | 2021-11-01 |
TW202030736A (zh) | 2020-08-16 |
JP2020537280A (ja) | 2020-12-17 |
JP7476291B2 (ja) | 2024-04-30 |
JP2023039985A (ja) | 2023-03-22 |
US20190114097A1 (en) | 2019-04-18 |
TWI692764B (zh) | 2020-05-01 |
EP3673486A1 (en) | 2020-07-01 |
WO2019074652A1 (en) | 2019-04-18 |
TWI784742B (zh) | 2022-11-21 |
TW202309907A (zh) | 2023-03-01 |
CN111226279B (zh) | 2023-07-25 |
TW201923771A (zh) | 2019-06-16 |
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EP3673486A4 (en) | 2021-04-28 |
US11188237B2 (en) | 2021-11-30 |
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TWI830475B (zh) | 2024-01-21 |
KR102380672B1 (ko) | 2022-04-04 |
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