JP7194116B2 - 酸化ケイ素の核形成／接着の向上により膜粗さを改善するための処理アプローチ - Google Patents

酸化ケイ素の核形成／接着の向上により膜粗さを改善するための処理アプローチ Download PDF

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JP7194116B2
JP7194116B2 JP2019554823A JP2019554823A JP7194116B2 JP 7194116 B2 JP7194116 B2 JP 7194116B2 JP 2019554823 A JP2019554823 A JP 2019554823A JP 2019554823 A JP2019554823 A JP 2019554823A JP 7194116 B2 JP7194116 B2 JP 7194116B2
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amorphous silicon
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ルイ チェン，
アブヒジット バス マリック，
イーホン チェン，
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Applied Materials Inc
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP2019554823A 2017-04-07 2018-03-21 酸化ケイ素の核形成／接着の向上により膜粗さを改善するための処理アプローチ Active JP7194116B2 (ja)

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US201762482872P 2017-04-07 2017-04-07
US62/482,872 2017-04-07
PCT/US2018/023474 WO2018187034A1 (en) 2017-04-07 2018-03-21 Treatment approach to improve film roughness by improving nucleation/adhesion of silicon oxide

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JP2020517098A5 JP2020517098A5 (https=) 2021-05-06
JP7194116B2 true JP7194116B2 (ja) 2022-12-21

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JP (1) JP7194116B2 (https=)
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WO (1) WO2018187034A1 (https=)

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KR20190035036A (ko) * 2017-09-25 2019-04-03 삼성전자주식회사 박막 형성 장치 및 이를 이용한 비정질 실리콘 막 형성방법
KR102578827B1 (ko) * 2018-04-24 2023-09-15 삼성전자주식회사 유연한 유무기 보호막 및 그 제조방법
JP7627432B2 (ja) * 2019-12-10 2025-02-06 東京エレクトロン株式会社 犠牲キャッピング層としての自己組織化単分子層
US20210327891A1 (en) * 2020-04-16 2021-10-21 Applied Materials, Inc. Stack for 3d-nand memory cell
US11640905B2 (en) * 2020-12-17 2023-05-02 Applied Materials, Inc. Plasma enhanced deposition of silicon-containing films at low temperature
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